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21. 发明授权

US4564766A Method for driving solid state image pickup device 失效
标题翻译：驱动固态摄像装置的方法
公开(公告)号：US4564766A
公开(公告)日：1986-01-14
申请号：US701648
申请日：1985-02-14
申请人： Takao Kuroda , Kenju Horii
发明人： Takao Kuroda , Kenju Horii
IPC分类号： H01L27/148 , H04N5/341 , H01L27/14
CPC分类号： H04N3/1537 , H01L27/14831
摘要： A method for driving a solid state image pickup device is provided in which charges stored in a group of photoelectric conversion elements of odd rows are first discharged or read out, and then charges stored in a group of photoelectric conversion elements of even rows are read out or discharged, thereafter, the charges stored in the group of photoelectric conversion elements of even rows are first discharged or read out and then charges stored in the group of photoelectric conversion elements of odd rows and read out or discharged.
摘要翻译：提供一种用于驱动固态图像拾取装置的方法，其中首先将存储在奇数行的一组光电转换元件中的电荷放电或读出，然后读出存储在偶数行的一组光电转换元件中的电荷或放电，此后首先对存储在偶数行的光电转换元件组中的电荷进行放电或读出，然后存储在奇数行的光电转换元件组中的电荷被读出或放电。

22. 发明授权

US08310296B2 Driving transistor control circuit 有权
标题翻译：驱动晶体管控制电路
公开(公告)号：US08310296B2
公开(公告)日：2012-11-13
申请号：US13351640
申请日：2012-01-17
申请人： Takao Kuroda
发明人： Takao Kuroda
IPC分类号： H03K17/04
CPC分类号： H03K17/166
摘要： A control circuit controls a driving transistor connected in series with an electrical load between a power supply voltage and a ground. The control circuit includes a pull-up resistor connected at one end to a power supply voltage side of the driving transistor, a current detection resistor for detecting an electric current flowing from the driving transistor to the ground, a current mirror circuit including a starting transistor connected between the pull-up transistor and the current detection resistor. The current mirror circuit supplies a mirror current of the electric current. The control circuit further includes a current source circuit for supplying a driving current to a control terminal of the driving transistor in accordance with the mirror current to turn ON the driving transistor in response to an external control signal.
摘要翻译：控制电路控制与电源电压和地之间的电负载串联连接的驱动晶体管。控制电路包括一端连接到驱动晶体管的电源电压侧的上拉电阻，用于检测从驱动晶体管流到地的电流的电流检测电阻，包括起动晶体管的电流镜电路连接在上拉晶体管和电流检测电阻之间。电流镜电路提供电流的反射镜电流。控制电路还包括电流源电路，用于根据镜电流向驱动晶体管的控制端提供驱动电流，以响应于外部控制信号导通驱动晶体管。

23. 发明授权

US07948048B2 Semiconductor device and method for manufacturing same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07948048B2
公开(公告)日：2011-05-24
申请号：US11570658
申请日：2005-12-14
申请人： Takao Kuroda
发明人： Takao Kuroda
IPC分类号： H01L31/06
CPC分类号： H01L27/14689 , H01L27/14806 , H01L29/76833
摘要： In a semiconductor device 10 including a structure where transfer electrodes 2a to 2c are disposed on a semiconductor substrate 1 via an insulation layer 3, a first semiconductor region 4 of a first conductivity type, a second semiconductor region 5 of a conductivity type opposite to the first conductivity type, and a third semiconductor region 6 of the first conductivity type in a position that overlaps a region of the semiconductor substrate 1 directly underneath the transfer electrodes 2a to 2c. The second semiconductor region 5 is formed on the first semiconductor region 4. The third semiconductor region 6 is formed on the second semiconductor region 5 so that a position of a maximal point 8 of electric potential of the second semiconductor region 5 when being depleted is deeper than a position of the maximal point 8 in a case where the third semiconductor region 6 does not exist.
摘要翻译：在包括通过绝缘层3在半导体衬底1上配置转移电极2a至2c的结构的半导体器件10中，具有第一导电类型的第一半导体区域4，与第二导电类型相反的第二半导体区域5 第一导电类型的第三半导体区域6和第一导电类型的第三半导体区域6，其位于与转印电极2a至2c正下方的半导体衬底1的区域重叠的位置。第二半导体区域5形成在第一半导体区域4上。第三半导体区域6形成在第二半导体区域5上，使得当第二半导体区域5耗尽时第二半导体区域5的电位的最大点8的位置更深而不存在第三半导体区域6的情况下的最大点8的位置。

24. 发明授权

US07397508B2 Physical quantity distribution sensor, method of driving said sensor and method of producing said sensor 有权
标题翻译：物理量分布传感器，驱动所述传感器的方法和产生所述传感器的方法
公开(公告)号：US07397508B2
公开(公告)日：2008-07-08
申请号：US10336786
申请日：2003-01-06
申请人： Takao Kuroda , Masayuki Masuyama
发明人： Takao Kuroda , Masayuki Masuyama
IPC分类号： H04N3/14
CPC分类号： H04N5/3741 , H04N5/374
摘要： A physical quantity distribution sensor is disclosed. The sensor comprises: a plurality of sensor/storage sections each having a sensor element for sensing a received physical quantity and a storage element for storing the information of physical quantity sensed by the sensor element; a selector for selecting at least one of the sensor/storage sections; and a plurality of buffers each capable of detecting and supplying the information stored in at least one selected sensor/storage section. This sensor further comprises at least one selection signal transfer line for transferring an output of the selector. Power supply input portions of the buffers are connected to the selection signal transfer line, and the buffers are operated using, as a power voltage, an output of the selector entered into the buffers through the selection signal transfer line.
摘要翻译：公开了一种物理量分布传感器。传感器包括：多个传感器/存储部分，每个传感器/存储部分具有用于感测接收到的物理量的传感器元件和用于存储由传感器元件感测的物理量的信息的存储元件; 用于选择所述传感器/存储部分中的至少一个的选择器; 以及多个缓冲器，每个缓冲器能够检测和提供存储在至少一个选择的传感器/存储部分中的信息。该传感器还包括用于传送选择器的输出的至少一个选择信号传送线。缓冲器的电源输入部分连接到选择信号传送线，并且通过选择信号传送线使用缓冲器输入的选择器作为电源电压来操作缓冲器。

25. 发明申请

US20080116752A1 Disconnection detecting circuit 有权
标题翻译：断路检测电路
公开(公告)号：US20080116752A1
公开(公告)日：2008-05-22
申请号：US11976505
申请日：2007-10-25
申请人： Takao Kuroda , Hiroshi Imai
发明人： Takao Kuroda , Hiroshi Imai
IPC分类号： H02H3/00
CPC分类号： G07C9/00309 , G07C2009/00793 , Y10T307/826
摘要： In a disconnection detecting mode, first and second MOSFETs are turned off, a transistor is turned on, and charges of a capacitor are initialized. After that, third and fourth MOSFETs are alternately turned on/off by drive signals and having a complementary relation. When an antenna is connected normally, a pulse AC signal is transmitted to an output terminal via the antenna, and current flows from the output terminal into the capacitor via a resistor, a diode, and a resistor. When a voltage across terminals becomes equal to or higher than a determination reference voltage, a disconnection detection signal is changed to the H level (a connection state).
摘要翻译：在断线检测模式中，第一和第二MOSFET截止，晶体管导通，电容器的电荷被初始化。之后，第三和第四MOSFET被驱动信号交替地导通/截止并具有互补关系。当天线正常连接时，通过天线将脉冲AC信号传输到输出端子，电流通过电阻，二极管和电阻从输出端流入电容器。当端子间的电压变为等于或高于确定参考电压时，断开检测信号变为H电平（连接状态）。

26. 发明授权

US06639925B2 Optical information processing equipment and semiconductor light emitting device suitable therefor 有权
公开(公告)号：US06639925B2
公开(公告)日：2003-10-28
申请号：US09964519
申请日：2001-09-28
申请人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
发明人： Atsuko Niwa , Tsukuru Ohtoshi , Takao Kuroda , Makoto Okai , Takeshi Shimano
IPC分类号： H01S500
CPC分类号： B82Y20/00 , H01S5/3202 , H01S5/3407 , H01S5/343 , H01S5/34333
摘要： An information processor of a high reliability and a high recording density, and a blue color, blue-violet color and violet color based semiconductor light emitting device operable at a low threshold current density, used for the same, are provided. An optical information processor of a high reliability and a high recording density enables a moving picture, such as a high-definition television picture, to be recorded and reproduced satisfactorily. A barrier layer in a quantum-well active layer of a semiconductor light emitting device is doped with n-type impurities at a high density. Alternatively, the face orientation of a quantum-well active layer of a semiconductor light emitting device is a plane inclined from the (0001) plane, whereby the threshold current value of the semiconductor light emitting device can be decreased. The semiconductor light emitting device is typified by a gallium nitride based compound semiconductor laser device.

27. 发明授权

US5786607A Solid-state image pick-up device and method for manufacturing the same 失效
公开(公告)号：US5786607A
公开(公告)日：1998-07-28
申请号：US654962
申请日：1996-05-29
申请人： Katsuya Ishikawa , Takao Kuroda , Yuji Matsuda , Masahiko Niwayama , Keishi Tachikawa
发明人： Katsuya Ishikawa , Takao Kuroda , Yuji Matsuda , Masahiko Niwayama , Keishi Tachikawa
IPC分类号： H01L27/148 , H01L29/768
CPC分类号： H01L27/14812 , H01L27/14825
摘要： A solid-state image pick-up device having a structure in which the amount of transferred charges is not reduced in a vertical CCD portion even if a pixel portion is made finer, and a method for manufacturing the solid-state image pick-up device are provided. A first p-type well and a second p-type well are formed on an N (100) silicon substrate. A vertical CCD n.sup.+ layer is formed in the second p-type well 3. Then, impurity ions are implanted into a surface layer of the N (100) silicon substrate including an upper layer portion of the vertical CCD n.sup.+ layer to form a p.sup.- layer. An isolating portion for isolating photodiode portions from the vertical CCD n.sup.+ layer and a read control portion for controlling the read of charges from the photodiode n layer are simultaneously formed on a portion adjacent to the vertical CCD n.sup.+ layer.

28. 发明授权

US5262661A Solid-state image pickup device, having increased charge storage and improved electronic shutter operation 失效
标题翻译：固态图像拾取装置，具有增加的电荷存储和改进的电子快门操作
公开(公告)号：US5262661A
公开(公告)日：1993-11-16
申请号：US710992
申请日：1991-06-06
申请人： Takao Kuroda , Sumio Terakawa , Shigeru Okamoto , Katsuya Ishikawa
发明人： Takao Kuroda , Sumio Terakawa , Shigeru Okamoto , Katsuya Ishikawa
IPC分类号： H01L27/148 , H01L29/78 , H01L27/14 , H01L31/00
CPC分类号： H01L27/14887 , H01L27/14831
摘要： The impurity density of a photoelectric transducer n-layer (7) and the impurity density of a p-layer (6) of an impurity region in which the electric transducer (7) and a transfer channel (9) are formed, are each distributed to have its maximum value in a more interior part from the surface of a semiconductor substrate (5). Alternatively, i) a thin, high-density p-layer (34) and ii) a thick, low-density p-layer (33) of an impurity region in which the electric transducer (7) and the transfer channel (9) are formed may be formed. Each minimum potential in these two p-layers (33, 34) is made to have a different dependence on the voltage applied to an n-type semiconductor substrate (5). The thick, low-density p-layer (33) is formed in such a way that it comes into contact with part of the photoelectric transducer n-layer (7) at its bottom portion. The above constitution can bring about a solid-state image pickup device that can prevent the blooming phenomenon, causes less residual images, and can operate as an electronic shutter with ease.

29. 发明授权

US5041392A Method for making solid state image sensing device 失效
标题翻译：制作固态摄像装置的方法
公开(公告)号：US5041392A
公开(公告)日：1991-08-20
申请号：US544620
申请日：1990-06-27
申请人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
发明人： Takao Kuroda , Toshihiro Kuriyama , Kenju Horii , Hiroyuki Mizuno
IPC分类号： H01L27/148
CPC分类号： H01L27/14887 , H01L27/14831
摘要： In a solid state image sensing device of p-conductivity type well, photo-electro converting region (1) are configurated to have larger area as depth increases, so that excessive electric charges generated in the p-conductivity type well are easily transferred from expanded peripheral parts (7) at the bottom (1b) to channel (3), without being undesirably transferred downward through thin p-conductivity type region 6 to substrate (4), and smear electric charges which has been generated in a thin p-conductivity type well under the photo-electro converting region in the conventional device is suppressed, to effectively decrease the smear phenomenon.

30. 发明授权

US4814838A Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US4814838A
公开(公告)日：1989-03-21
申请号：US56657
申请日：1987-06-02
申请人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
发明人： Takao Kuroda , Akiyoshi Watanabe , Takao Miyazaki , Hiroyoshi Matsumura
IPC分类号： H01L21/20 , H01L21/203 , H01L21/338 , H01L29/205 , H01L29/36 , H01L29/43 , H01L29/812 , H01L29/80
CPC分类号： H01L29/205 , H01L21/02392 , H01L21/02395 , H01L21/02461 , H01L21/02463 , H01L21/02543 , H01L21/02546 , H01L21/02549 , H01L21/02576 , H01L21/02579 , H01L29/365 , H01L29/432
摘要： A semiconductor device in which two sorts of compound semiconductors having unequal lattice constants are joined, is disclosed.Defects such as dislocations attributed to lattice mismatching are avoided by subjecting one of the compound semiconductors to atomic layer doping with an impurity. Owing to this construction, it is permitted to combine the optimum materials as the compound semiconductors, and the semiconductor device has its performance improved and its design versatility expanded.
摘要翻译：公开了具有不等晶格常数的两种化合物半导体的半导体器件。通过使化合物半导体之一与杂质进行原子层掺杂来避免由晶格失配引起的位错等缺陷。由于这种结构，允许将最佳材料作为复合半导体组合，并且半导体器件具有其性能改进并且其设计多功能性扩大。

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