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21. 发明申请

US20060086971A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060086971A1
公开(公告)日：2006-04-27
申请号：US11152114
申请日：2005-06-15
申请人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
发明人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11568 , H01L21/823878 , H01L27/105 , H01L27/1052 , H01L27/11573 , H01L29/792 , Y10S438/954
摘要： A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要翻译：一种半导体器件包括形成在半导体衬底上的存储器部分，并且包括具有可存储半导体衬底和存储电极之间的电荷的ONO膜的第一晶体管和用于隔离第一晶体管的第一STI区域和形成在半导体衬底并且包括具有CMOS电极和栅极电介质的第二晶体管和用于隔离第二晶体管的第二STI区域。第一STI区域的顶表面的高度被设定为等于或小于第二STI区域的顶表面的高度。

22. 发明授权

US5136219A Electric-car controller 失效
标题翻译：电动汽车控制器
公开(公告)号：US5136219A
公开(公告)日：1992-08-04
申请号：US680070
申请日：1991-04-03
申请人： Nobuyoshi Takahashi , Koichi Kaminishi , Minoru Kaminaga
发明人： Nobuyoshi Takahashi , Koichi Kaminishi , Minoru Kaminaga
IPC分类号： B60L15/28 , B60L11/18 , B60L15/20
CPC分类号： B60L11/1805 , B60L15/2009 , B60L2250/26 , Y02T10/645 , Y02T10/7005 , Y02T10/7275
摘要： The present invention is directed to an electric-car controller comprising a chopper for controlling the speed of a DC motor, a by-pass contactor for applying a DC source voltage directly to the DC motor, means for detecting that an acceleration command has reached a certain specified value or above, means for detecting that the acceleration of the car has dropped to a certain specified value or below, and means for turning on the by-pass contactor when the acceleration command has reached the certain specified value or above and the acceleration of the car has dropped to the certain specified value or below.
摘要翻译：本发明涉及一种电动车控制器，其包括用于控制直流电动机的速度的斩波器，用于将直流电源电压直接施加到直流电动机的旁路接触器，用于检测加速指令已达到一定的规定值以上的装置，用于检测轿厢的加速度已经下降到一定的规定值以下的装置，以及当加速指令达到规定值以上时开启旁通接触器的装置，的汽车已经下降到一定的指定值或以下。

23. 发明授权

US4967295A Humidity regulating apparatus for magnetic disk drive 失效
标题翻译：磁盘驱动器湿度调节装置
公开(公告)号：US4967295A
公开(公告)日：1990-10-30
申请号：US203837
申请日：1988-06-08
申请人： Shiro Yamauchi , Naotake Rito , Nobuyoshi Takahashi
发明人： Shiro Yamauchi , Naotake Rito , Nobuyoshi Takahashi
IPC分类号： B01D53/26 , B01D53/32 , G11B33/14
CPC分类号： B01D53/26 , B01D53/326 , G11B33/1453
摘要： Apparatus for regulating the humidity inside a semi-sealed, partly air-permeable container for a magnetic disk drive. An opening provided in the semi-sealed container is sealed by an insulated humidity regulating element which includes a hydrogen ion conductor (which may be a solid electrolyte) and porous film-like first and second electrodes that are bonded to respective surfaces of both sides of the hydrogen ion conductor. A DC voltage is impressed across both electrodes to regulate the humidity.

24. 发明授权

US4750680A Vertically controlled track sander 失效
标题翻译：垂直控制砂光机
公开(公告)号：US4750680A
公开(公告)日：1988-06-14
申请号：US58965
申请日：1987-06-08
申请人： Junichi Shigeura , Noriyuki Isoda , Nobuyoshi Takahashi
发明人： Junichi Shigeura , Noriyuki Isoda , Nobuyoshi Takahashi
IPC分类号： B60B39/08 , B61C15/10 , B60B39/04
CPC分类号： B60B39/086 , B61C15/10
摘要： A device for increasing the factor of adhesion between the wheel of a railway vehicle and a rail, in which adhesion increasing grains are ejected together with air to a point between the wheel and the rail. The vertical aim of the ejection nozzle is automatically controlled depending on the deflection of an elastic member between the undercarriage and the wheel.
摘要翻译：一种用于增加铁路车辆的车轮与轨道之间的粘合系数的装置，其中附着力增加的颗粒与空气一起喷射到车轮和轨道之间的点处。喷嘴的垂直目标根据起落架和车轮之间的弹性件的偏转自动控制。

25. 发明授权

US4582252A Heater unit for an automotive vehicle air conditioner 失效
标题翻译：汽车空调加热装置
公开(公告)号：US4582252A
公开(公告)日：1986-04-15
申请号：US718223
申请日：1985-04-01
申请人： Yoshiyuki Ogihara , Kenzo Hirashima , Hideo Takahashi , Nobuyoshi Takahashi
发明人： Yoshiyuki Ogihara , Kenzo Hirashima , Hideo Takahashi , Nobuyoshi Takahashi
IPC分类号： B60H1/00 , B60H1/02
CPC分类号： B60H1/00064 , B60H2001/00135 , B60H2001/002
摘要： A casing has an inlet opening and outlet openings. A partition wall divides the interior of the casing into first and second chambers and also divides the inlet opening into two segments communicating separately with the first and second chambers. A heat exchanger extends into both of the first and second chambers. Air is supplied from the first chamber to a front area of a vehicle interior via at least one of the outlet openings. Air is normally supplied from the second chamber to a rear area of the vehicle interior via the other outlet opening.
摘要翻译：壳体具有入口开口和出口。分隔壁将壳体的内部分成第一和第二腔室，并且还将入口开口分成与第一和第二腔室分开连通的两个段。热交换器延伸到第一和第二腔室中。空气经由至少一个出口开口从第一室供应到车辆内部的前部区域。空气通常经由另一出口开口从第二腔室供给到车辆内部的后部区域。

26. 发明授权

US08628740B2 Processing method for recovering iron oxide and hydrochloric acid 有权
标题翻译：回收氧化铁和盐酸的加工方法
公开(公告)号：US08628740B2
公开(公告)日：2014-01-14
申请号：US13000216
申请日：2009-06-18
申请人： Nobuyoshi Takahashi , Osama Taki , Herbert Weissenbaeck , Dieter Vogl
发明人： Nobuyoshi Takahashi , Osama Taki , Herbert Weissenbaeck , Dieter Vogl
IPC分类号： B01D11/00 , B01D49/00
CPC分类号： C01G49/06 , C01B7/0706 , C23G1/36
摘要： A method of processing waste iron chloride solution including ferrous chloride, ferric chloride or mixtures thereof and optionally free hydrochloric acid, includes concentrating waste iron chloride solution into concentrated liquid having iron chloride concentration of at least 30%-40% by weight; optionally oxidizing ferrous chloride in the concentrated liquid from the concentration step to ferric chloride providing liquid containing ferric chloride; hydrolyzing the liquid containing ferric chloride from the oxidation step at 155-350° C., maintaining the ferric chloride concentration at least at 65% by weight, generating steam containing hydrogen chloride and liquid containing ferric oxide; separating ferric oxide from the liquid containing ferric oxide in the hydrolysis step; condensing steam containing hydrogen chloride in the hydrolysis step, recovering hydrochloric acid at a concentration of at least 10%-15% by weight; and using condensation energy of the hydrogen chloride containing steam in the recovery step to heat the concentration step performed under reduced pressure.
摘要翻译：一种处理包括氯化亚铁，氯化铁或其混合物和任选的游离盐酸的废氯化铁溶液的方法包括将废铁水溶液浓缩至浓度为至少30％-40％（重量）的氯化铁浓缩液; 任选地将浓缩步骤中的浓缩液中的氯化亚铁氧化成三氯化铁提供含有氯化铁的液体; 在155-350℃下从氧化步骤水解含有氯化铁的液体，维持氯化铁浓度至少为65重量％，产生含有氯化氢的蒸汽和含有氧化铁的液体; 在水解步骤中从含有三氧化二铁的液体中分离出氧化铁; 在水解步骤中冷凝含有氯化氢的蒸汽，以至少10重量％-15重量％的浓度回收盐酸; 并且在回收步骤中使用含有氯化氢的蒸汽的冷凝能量来加热在减压下进行的浓缩步骤。

27. 发明授权

US07704803B2 Semiconductor device having diffusion layers as bit lines and method for manufacturing the same 失效
标题翻译：具有作为位线的扩散层的半导体器件及其制造方法
公开(公告)号：US07704803B2
公开(公告)日：2010-04-27
申请号：US12337023
申请日：2008-12-17
申请人： Nobuyoshi Takahashi , Fumihiko Noro , Kenji Sato
发明人： Nobuyoshi Takahashi , Fumihiko Noro , Kenji Sato
IPC分类号： H01L21/8246
CPC分类号： H01L27/11568 , H01L27/115
摘要： A semiconductor device includes: a semiconductor region; a plurality of bit line diffusion layers formed in an upper portion of the semiconductor region and each extending in a row direction; a plurality of bit line insulating films formed on the bit line diffusion layers; a plurality of gate insulting films formed between the respective adjacent bit line diffusion layers on the semiconductor region; and a plurality of word lines each formed on the semiconductor region in a column direction and each intersecting with the bit line insulating films and the gate insulating films. Memory cells are formed at intersections of the gate insulating films and the word lines. A plurality of connection diffusion layers including connection parts electrically connected to the bit line diffusion layers are formed in the upper portion of the semiconductor region, and a level of upper faces of the connection parts is lower than a level of upper faces of the connection diffusion layers in the semiconductor region.
摘要翻译：半导体器件包括：半导体区域; 多个位线扩散层，其形成在所述半导体区域的上部，并且各自沿行方向延伸; 形成在位线扩散层上的多个位线绝缘膜; 形成在所述半导体区域上的各个相邻位线扩散层之间的多个栅极绝缘膜; 以及多个字线，各自在列方向上形成在半导体区域上，并且与字线绝缘膜和栅极绝缘膜交叉。存储单元形成在栅极绝缘膜和字线的交点处。包括与位线扩散层电连接的连接部分的多个连接扩散层形成在半导体区域的上部，并且连接部分的上表面的电平低于连接扩散部的上表面的高度半导体区域中的层。

28. 发明授权

US07598589B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US07598589B2
公开(公告)日：2009-10-06
申请号：US11152114
申请日：2005-06-15
申请人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
发明人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
IPC分类号： H01L27/105
CPC分类号： H01L27/11568 , H01L21/823878 , H01L27/105 , H01L27/1052 , H01L27/11573 , H01L29/792 , Y10S438/954
摘要： A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要翻译：一种半导体器件包括形成在半导体衬底上的存储器部分，并且包括具有可存储半导体衬底和存储电极之间的电荷的ONO膜的第一晶体管和用于隔离第一晶体管的第一STI区域和形成在半导体衬底并且包括具有CMOS电极和栅极电介质的第二晶体管和用于隔离第二晶体管的第二STI区域。第一STI区域的顶表面的高度被设定为等于或小于第二STI区域的顶表面的高度。

29. 发明申请

US20070020848A1 Method for fabricating semiconductor device 有权
公开(公告)号：US20070020848A1
公开(公告)日：2007-01-25
申请号：US11527459
申请日：2006-09-27
申请人： Nobuyoshi Takahashi
发明人： Nobuyoshi Takahashi
IPC分类号： H01L21/336
CPC分类号： H01L27/105 , H01L27/11568 , H01L27/11573
摘要： In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.

30. 发明申请

US20050158954A1 Method for fabricating semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20050158954A1
公开(公告)日：2005-07-21
申请号：US11033624
申请日：2005-01-13
申请人： Nobuyoshi Takahashi
发明人： Nobuyoshi Takahashi
IPC分类号： H01L27/10 , H01L21/336 , H01L21/8246 , H01L21/8247 , H01L27/105 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L27/105 , H01L27/11568 , H01L27/11573
摘要： In a method for fabricating a semiconductor device in which a semiconductor memory element having an ONO film and a CMOS part are formed on a single semiconductor substrate, a CMOS gate-oxidation step is performed several times. Thereafter, a bit line diffusion layer and a bit line oxide film are formed in the semiconductor memory element.
摘要翻译：在其中在单个半导体衬底上形成具有ONO膜和CMOS部分的半导体存储元件的半导体器件的制造方法中，进行多次CMOS栅极氧化步骤。此后，在半导体存储元件中形成位线扩散层和位线氧化膜。

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