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21. 发明授权

US06896763B2 Method and apparatus for monitoring a process by employing principal component analysis 有权
标题翻译：采用主成分分析法监测过程的方法和装置
公开(公告)号：US06896763B2
公开(公告)日：2005-05-24
申请号：US10341696
申请日：2003-01-14
申请人： Lalitha Balasubramhanya , Moshe Sarfaty , Jed Davidow , Dimitris Lymberopoulos
发明人： Lalitha Balasubramhanya , Moshe Sarfaty , Jed Davidow , Dimitris Lymberopoulos
IPC分类号： H01L21/302 , G01N21/27 , G01N21/35 , G05B23/02 , H01L21/02 , H01L21/3065 , H01L21/66 , H01L21/306 , C23F1/00
CPC分类号： G05B23/024 , G01N21/274 , G01N21/3563 , G01N21/359 , G01N2201/1293
摘要： A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.
摘要翻译：提供了一种通过采用主成分分析来监测过程的方法和装置。测量要监控的过程（生产过程）的相关属性。然后对测量的相关属性执行主成分分析，以便生成至少一个生产主成分; 并且将至少一个生产主成分与与校准过程（校准主成分）相关联的主成分进行比较。通过测量校准过程的相关属性以及通过对所测量的相关属性执行主成分分析以获得至少一个主成分来获得校准主成分。识别具有指示期望的处理状态，处理事件和室状态中的至少一个的特征的主要成分，并将其指定为校准主成分。

22. 发明授权

US06603538B1 Method and apparatus employing optical emission spectroscopy to detect a fault in process conditions of a semiconductor processing system 失效
标题翻译：采用光发射光谱法检测半导体处理系统的工艺条件故障的方法和装置
公开(公告)号：US06603538B1
公开(公告)日：2003-08-05
申请号：US09721403
申请日：2000-11-21
申请人： Hakeem Oluseyi , Moshe Sarfaty
发明人： Hakeem Oluseyi , Moshe Sarfaty
IPC分类号： G01N2162
CPC分类号： G01N21/73
摘要： A method and an apparatus system feature detecting faults in process conditions of a plasma-based semiconductor processing system by sensing the spectral emissions of the plasma. As a result, the method includes sensing optical energy produced by the plasma and identifying the fault in the process conditions as a function of one or more of the plurality of spectral bands. To that end, the apparatus includes a detector in optical communication with the processing chamber to sense optical energy generated by the plasma, and a spectrum analyzer, in electrical communication with the optical detector. The spectrum analyzer resolves the spectral bands and produces information corresponding thereto. A processor is in electrical communication with the spectrum analyzer, and a memory is in electrical communication with the processor. The memory includes a computer-readable medium having a computer-readable program embodied therein that controls the system to carry-out the method.
摘要翻译：一种通过感测等离子体的光谱发射来检测基于等离子体的半导体处理系统的处理条件中的故障的方法和装置系统。结果，该方法包括感测由等离子体产生的光能并且根据多个光谱带中的一个或多个的功能识别处理条件中的故障。为此，该装置包括与处理室光学通信的检测器，用于感测由等离子体产生的光能，以及与光学检测器电连通的频谱分析仪。频谱分析仪解析频谱带并产生与之对应的信息。处理器与频谱分析仪电气通信，并且存储器与处理器电通信。存储器包括具有其中体现的计算机可读程序的计算机可读介质，其控制系统执行该方法。

23. 发明授权

US06521080B2 Method and apparatus for monitoring a process by employing principal component analysis 失效
公开(公告)号：US06521080B2
公开(公告)日：2003-02-18
申请号：US10002830
申请日：2001-11-15
申请人： Lalitha Balasubramhanya , Moshe Sarfaty , Jed Davidow , Dimitris Lymberopoulos
发明人： Lalitha Balasubramhanya , Moshe Sarfaty , Jed Davidow , Dimitris Lymberopoulos
IPC分类号： C23F100
CPC分类号： G05B23/024 , G01N21/274 , G01N21/3563 , G01N21/359 , G01N2201/1293
摘要： A method and apparatus for monitoring a process by employing principal component analysis are provided. Correlated attributes are measured for the process to be monitored (the production process). Principal component analysis then is performed on the measured correlated attributes so as to generate at least one production principal component; and the at least one production principal component is compared to a principal component associated with a calibration process (a calibration principal component). The calibration principal component is obtained by measuring correlated attributes of a calibration process, and by performing principal component analysis on the measured correlated attributes so as to generate at least one principal component. A principal component having a feature indicative of at least one of a desired process state, process event and chamber state then is identified and is designated as the calibration principal component.

24. 发明授权

US6034781A Electro-optical plasma probe 失效
标题翻译：电光等离子探头
公开(公告)号：US6034781A
公开(公告)日：2000-03-07
申请号：US85079
申请日：1998-05-26
申请人： Moshe Sarfaty , Noah Hershkowitz
发明人： Moshe Sarfaty , Noah Hershkowitz
IPC分类号： G01N21/71 , G01R19/00 , G01N21/00
CPC分类号： G01R19/0061 , G01N21/718
摘要： A plasma probe enables simultaneous localized electrostatic measurements and optical emission spectroscopy. The probe has a support arm with an elongated longitudinally extending section and a bend section at the end of which is supported an electrical probe element composed of back-to-back charge collection plates separated by an insulating spacer. The inner plate faces an opening in the end of the elongated support arm section which defines a collimating channel. An optical fiber extends through the support arm and has an aperture in the collimating channel to receive light emitted from the plasma between the end of the elongated section of the support arm and the inner charge collection plate. The electrical probe element acts as a blocking element to block light emitted from the plasma outside of the region between the electrical probe element and the end of the support arm section. Electrical wires extend through the probe from the charge collection plates to charge detectors, allowing measurements of electron density, Electron Energy Distribution Function and ion flow. The light received by the optical fiber is detected by a spectrometer to carry out Optical Emission Spectroscopy, which can be correlated with the information obtained from the charge collection plates. The probe can be moved around a plasma confinement chamber to provide spatially localized measurements of plasma characteristics at various positions within the chamber.
摘要翻译：等离子探头可以同时进行局部静电测量和光发射光谱。该探针具有一个具有细长纵向延伸部分的支撑臂，并且其末端处的弯曲部分被支撑在由绝缘间隔物隔开的背对背电荷收集板组成的电探针元件。内板面对细长支撑臂部分端部的开口，该开口限定准直通道。光纤延伸穿过支撑臂并且在准直通道中具有孔，以在支撑臂的细长部分的端部和内部电荷收集板之间接收从等离子体发射的光。电探针元件用作阻挡元件，以阻挡从电探针元件和支撑臂部分的端部之间的区域外部的等离子体发射的光。电线通过探针从电荷收集板延伸到电荷检测器，允许测量电子密度，电子能量分布函数和离子流。通过光谱仪检测由光纤接收的光，以进行光发射光谱，其可以与从电荷收集板获得的信息相关联。探针可以围绕等离子体限制室移动，以在室内的各个位置处提供等离子体特性的空间局部测量。

25. 发明授权

US07970588B2 Method, system and medium for controlling manufacturing process using adaptive models based on empirical data 失效
标题翻译：使用基于经验数据的自适应模型控制制造过程的方法，系统和介质
公开(公告)号：US07970588B2
公开(公告)日：2011-06-28
申请号：US12004675
申请日：2007-12-20
申请人： Yuri Kokotov , Alexander T. Schwarm , Efim Entin , Jacques Seror , Jehuda Hartman , Yossi Fisher , Arulkumar P. Shanmugasundram , Moshe Sarfaty
发明人： Yuri Kokotov , Alexander T. Schwarm , Efim Entin , Jacques Seror , Jehuda Hartman , Yossi Fisher , Arulkumar P. Shanmugasundram , Moshe Sarfaty
IPC分类号： G06F17/10
CPC分类号： G05B13/048 , G05B17/02
摘要： A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.
摘要翻译：公开了建模和/或控制制造过程的方法，系统和介质。该方法包括以下步骤：识别导致输出特性变化的一个或多个输入参数，使用估计的输入参数的最大值和最小值定义全局节点，并且定义计算每个节点的预测输出特性的数学方程式。该方法还包括以下步骤：接收具有一个或多个输入参数值和至少一个经验输出值的至少一个经验数据点，并且基于所述至少一个经验输出值和基于一个或多个输入参数值使用数学方程计算的预测输出特性。

26. 发明申请

US20080177408A1 Method, system and medium for controlling manufacturing process using adaptive models based on empirical data 失效
标题翻译：使用基于经验数据的自适应模型控制制造过程的方法，系统和介质
公开(公告)号：US20080177408A1
公开(公告)日：2008-07-24
申请号：US12004675
申请日：2007-12-20
申请人： Yuri Kokotov , Alexander T. Schwarm , Efim Entin , Jacques Seror , Jehuda Hartman , Yossi Fisher , Arulkumar P. Shanmugasundram , Moshe Sarfaty
发明人： Yuri Kokotov , Alexander T. Schwarm , Efim Entin , Jacques Seror , Jehuda Hartman , Yossi Fisher , Arulkumar P. Shanmugasundram , Moshe Sarfaty
IPC分类号： G06F17/00 , G06F17/10
CPC分类号： G05B13/048 , G05B17/02
摘要： A method, system, and medium of modeling and/or for controlling a manufacturing process is disclosed. The method includes the steps of identifying one or more input parameters that cause a change in output characteristics, defining global nodes using estimated maximum and minimum values of the input parameters, and defining a mathematical equation that calculates a predicted output characteristic for each node. The method also includes the steps of receiving at least one empirical data point having one or more input parameter values and at least one empirical output value and adjusting the predicted output values at the nodes based on a difference between the at least one empirical output value and the predicted output characteristic calculated using the mathematical equation based on the one or more input parameter values.
摘要翻译：公开了建模和/或控制制造过程的方法，系统和介质。该方法包括以下步骤：识别导致输出特性变化的一个或多个输入参数，使用估计的输入参数的最大值和最小值定义全局节点，并且定义计算每个节点的预测输出特性的数学方程式。该方法还包括以下步骤：接收具有一个或多个输入参数值和至少一个经验输出值的至少一个经验数据点，并且基于所述至少一个经验输出值和基于一个或多个输入参数值使用数学方程计算的预测输出特性。

27. 发明授权

US07358494B1 Material composition analysis system and method 有权
标题翻译：材料成分分析系统及方法
公开(公告)号：US07358494B1
公开(公告)日：2008-04-15
申请号：US11153943
申请日：2005-06-15
申请人： Ying Gao , Moshe Sarfaty
发明人： Ying Gao , Moshe Sarfaty
IPC分类号： G01N23/00 , G21K7/77
CPC分类号： G01N23/227
摘要： The material composition of a thin film formed on a substrate or covered by a cap layer that shares one or more elements with the thin film can be determined by combining characteristic material data, such as characteristic x-ray data, from a material composition analysis tool, such as an electron probe-based x-ray metrology (EPMA) operation, with thickness data and (optionally) possible material phases for the thin film. The thickness data and/or the material phase options can be used to determine, for example, the penetration depth of a probe e-beam of the EPMA tool. Based on the penetration depth and the thin film thickness, the characteristic x-ray data from the EPMA operation can be analyzed to determine the composition (e.g., phase or elemental composition) of the thin film. An EPMA tool can include ellipsometry capabilities for all-in-one thickness and composition determination.
摘要翻译：可以通过将材料成分分析工具（诸如特征X射线数据）等特征材料数据组合而形成在基板上或由盖层共享具有薄膜的一个或多个元件的薄膜的材料组成，例如基于电子探针的x射线测量（EPMA）操作，具有厚度数据和（可选地）薄膜的可能的材料相。厚度数据和/或材料相位选项可以用于确定例如EPMA工具的探针电子束的穿透深度。基于穿透深度和薄膜厚度，可以分析来自EPMA操作的特征X射线数据，以确定薄膜的组成（例如相位或元素组成）。 EPMA工具可以包括用于一体式厚度和成分确定的椭圆测量功能。

28. 发明授权

US06745095B1 Detection of process endpoint through monitoring fluctuation of output data 失效
标题翻译：通过监测输出数据的波动来检测过程终点
公开(公告)号：US06745095B1
公开(公告)日：2004-06-01
申请号：US09686656
申请日：2000-10-04
申请人： Yuval Ben-Dov , Moshe Sarfaty , Alexander Viktorovich Garachtchenko
发明人： Yuval Ben-Dov , Moshe Sarfaty , Alexander Viktorovich Garachtchenko
IPC分类号： G06F1900
CPC分类号： H01L22/26
摘要： Progress of a semiconductor fabrication process is monitored by detecting data output by the process, and then correlating a specific process event to fluctuations in the output data over a time period of 10 milliseconds or less. In one embodiment, endpoint of a plasma chamber cleaning process may be identified by calculating standard deviation of intensity of optical chamber emissions based upon a local time period. The time at which standard deviation of optical emissions attains a steady state indicates endpoint of the cleaning process. Another approach to characterizing fluctuation is to perform a Fast Fourier Transform (FFT) on the output emissions data, and then to plot over time the total power of the emissions over a relevant frequency range. The time at which total power attains a steady state also reveals endpoint of the process. Other techniques for characterizing fluctuation for process monitoring include calculation of the root-mean-square or entropy of an output signal.
摘要翻译：通过检测由该过程输出的数据，然后在10毫秒或更短的时间段内将特定的处理事件与输出数据的波动相关联来监视半导体制造过程的进展。在一个实施例中，可以通过基于本地时间段计算光学室排放的强度的标准偏差来识别等离子体室清洁过程的端点。光发射的标准偏差达到稳定状态的时间表示清洁过程的终点。表征波动的另一种方法是对输出发射数据执行快速傅里叶变换（FFT），然后随时间绘制在相关频率范围内的排放总功率。总功率达到稳定状态的时间也揭示了过程的终点。用于表征过程监测的波动的其他技术包括计算输出信号的均方根或熵。

29. 发明授权

US06627463B1 Situ measurement of film nitridation using optical emission spectroscopy 失效
标题翻译：使用光发射光谱进行膜氮化的现场测量
公开(公告)号：US06627463B1
公开(公告)日：2003-09-30
申请号：US09693582
申请日：2000-10-19
申请人： Moshe Sarfaty
发明人： Moshe Sarfaty
IPC分类号： H01L2100
CPC分类号： H01L21/3144
摘要： A method of nitriding a silicon oxide film according to the present invention includes flowing a nitrogen-containing gas into a substrate processing chamber and forming a plasma from the gas. Optical emissions from the plasma are then measured while a silicon oxide film deposited over a substrate disposed in the chamber is exposed to the plasma to obtain OES data that is used to optimize, monitor and/or stop the nitriding process.
摘要翻译：根据本发明的氧化硅膜的氮化方法包括将含氮气体流入基板处理室并从气体形成等离子体。然后测量等离子体的光发射，同时沉积在设置在腔室中的衬底上的氧化硅膜暴露于等离子体以获得用于优化，监测和/或停止氮化过程的OES数据。

30. 发明授权

US06589869B2 Film thickness control using spectral interferometry 失效
公开(公告)号：US06589869B2
公开(公告)日：2003-07-08
申请号：US10131726
申请日：2002-04-23
申请人： Moshe Sarfaty , Lalitha S. Balasubramhanya , Jed E. Davidow , Dimitris P. Lymberopoulos
发明人： Moshe Sarfaty , Lalitha S. Balasubramhanya , Jed E. Davidow , Dimitris P. Lymberopoulos
IPC分类号： H01L21302
CPC分类号： H01L22/26 , H01L22/12 , H01L2924/0002 , H01L2924/00
摘要： A process for controlling a substrate processing operation such as a plasma etch operation. One embodiment of the method of the present invention forms a plasma within a substrate processing chamber to etch a wafer disposed within the chamber. The plasma emission is used by the process as a broadband light source. During the plasma etch process, a plurality of wavelengths of radiation reflected from the surface of the wafer being etched are measured with a spectrometer. These measurements are then compared using pattern recognition techniques to previous measurements taken during a previous plasma etch operation. Certain embodiments of the invention use principal component analysis (PCA) techniques to perform pattern recognition while other embodiment use programmed neural net pattern recognition techniques.

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