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    • 1. 发明授权
    • Detection of process endpoint through monitoring fluctuation of output data
    • 通过监测输出数据的波动来检测过程终点
    • US06745095B1
    • 2004-06-01
    • US09686656
    • 2000-10-04
    • Yuval Ben-DovMoshe SarfatyAlexander Viktorovich Garachtchenko
    • Yuval Ben-DovMoshe SarfatyAlexander Viktorovich Garachtchenko
    • G06F1900
    • H01L22/26
    • Progress of a semiconductor fabrication process is monitored by detecting data output by the process, and then correlating a specific process event to fluctuations in the output data over a time period of 10 milliseconds or less. In one embodiment, endpoint of a plasma chamber cleaning process may be identified by calculating standard deviation of intensity of optical chamber emissions based upon a local time period. The time at which standard deviation of optical emissions attains a steady state indicates endpoint of the cleaning process. Another approach to characterizing fluctuation is to perform a Fast Fourier Transform (FFT) on the output emissions data, and then to plot over time the total power of the emissions over a relevant frequency range. The time at which total power attains a steady state also reveals endpoint of the process. Other techniques for characterizing fluctuation for process monitoring include calculation of the root-mean-square or entropy of an output signal.
    • 通过检测由该过程输出的数据,然后在10毫秒或更短的时间段内将特定的处理事件与输出数据的波动相关联来监视半导体制造过程的进展。 在一个实施例中,可以通过基于本地时间段计算光学室排放的强度的标准偏差来识别等离子体室清洁过程的端点。 光发射的标准偏差达到稳定状态的时间表示清洁过程的终点。 表征波动的另一种方法是对输出发射数据执行快速傅里叶变换(FFT),然后随时间绘制在相关频率范围内的排放总功率。 总功率达到稳定状态的时间也揭示了过程的终点。 用于表征过程监测的波动的其他技术包括计算输出信号的均方根或熵。
    • 2. 发明授权
    • Low-noise amplifier
    • 低噪声放大器
    • US5963097A
    • 1999-10-05
    • US14325
    • 1998-01-27
    • Alexander Viktorovich GarachtchenkoSamuel Suresh Martin
    • Alexander Viktorovich GarachtchenkoSamuel Suresh Martin
    • H03F1/26H03F3/45H03F3/04H03F3/16
    • H03F3/45183H03F1/26H03F2200/372H03F2203/45371H03F2203/45392H03F2203/45498H03F2203/45702
    • A low-noise amplifier is disclosed that is capable of amplifying a signal with high gain (e.g., >60 dB) and low noise (e.g., 10.sup.6 .OMEGA.), high common mode rejection and high immunity to external noise sources. An illustrative embodiment of the present invention comprises: a first field-effect transistor having a first lead, a second lead and a third lead; a second field-effect transistor having a first lead, a second lead and a third lead, wherein the first lead of the first field-effect transistor is electrically connected to the first lead of the second field-effect transistor, the second lead of the first field-effect transistor is electrically connected to the second lead of the second field-effect transistor, and the third lead of the first field-effect transistor is electrically connected to the third lead of the second field-effect transistor; and a first bipolar junction transistor having a first lead, a second lead and a third lead, wherein the first lead of the first bipolar junction transistor is electrically connected to the first lead of the first field-effect transistor.
    • 公开了一种低噪声放大器,其能够在大频率上放大具有高增益(例如> 60dB)和低噪声(例如,<2nV / Hz- + E,fra 1/2 + EE)的信号 带宽(例如,1 Hz至1 MHz)和高输入阻抗(例如> 106 OMEGA),高共模抑制和对外部噪声源的高抗扰度。 本发明的说明性实施例包括:具有第一引线,第二引线和第三引线的第一场效应晶体管; 具有第一引线,第二引线和第三引线的第二场效应晶体管,其中所述第一场效应晶体管的所述第一引线电连接到所述第二场效应晶体管的所述第一引线,所述第二引线 第一场效应晶体管电连接到第二场效应晶体管的第二引线,并且第一场效应晶体管的第三引线电连接到第二场效应晶体管的第三引线; 以及具有第一引线,第二引线和第三引线的第一双极结晶体管,其中所述第一双极结晶体管的所述第一引线电连接到所述第一场效应晶体管的所述第一引线。