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    • 22. 发明授权
    • Polarizing plate and display apparatus having the same
    • 具有相同的偏光板和显示装置
    • US08508696B2
    • 2013-08-13
    • US12845637
    • 2010-07-28
    • Kwang-Hyun KimKi-Chul ShinSeung-Hee LeeJi-Hoon KimSang-Jae Kim
    • Kwang-Hyun KimKi-Chul ShinSeung-Hee LeeJi-Hoon KimSang-Jae Kim
    • G02F1/1335
    • G02F1/133502G02B5/3083G02F2001/133541G02F2001/133638G02F2413/02
    • A display apparatus comprises a display panel, a first polarizing plate and a second polarizing plate. The display panel comprises a first substrate including a pixel electrode, a second substrate opposite to the first substrate, and a liquid crystal layer disposed between a first surface of the first substrate and a first surface of the second substrate. The first polarizing plate comprises a first polarizer having a first polarizing axis, and a first λ/4 phase difference plate having a refractive index between about 1.35 and about 2.05 in a thickness direction. The second polarizing plate comprises a second polarizer having a second polarizing axis crossing the first polarizing axis, and a second λ/4 phase difference plate having a refractive index between about 1.35 and about 2.05 in a thickness direction. Accordingly, light leakage in a side view may be reduced and viewing angle may be improved.
    • 显示装置包括显示面板,第一偏振片和第二偏振片。 显示面板包括:第一基板,包括像素电极,与第一基板相对的第二基板;以及液晶层,设置在第一基板的第一表面和第二基板的第一表面之间。 第一偏振板包括具有第一偏振轴的第一偏振片和厚度方向上折射率约为1.35至约2.05的第一λ/ 4相位差板。 第二偏振板包括具有与第一偏振轴交叉的第二偏振轴的第二偏振片和在厚度方向上的折射率在约1.35和约2.05之间的第二λ/ 4相位差板。 因此,可以减小侧视图中的漏光,并且可以提高视角。
    • 30. 发明授权
    • Semiconductor memory device
    • 半导体存储器件
    • US07656715B2
    • 2010-02-02
    • US11819822
    • 2007-06-29
    • Kwang-Hyun Kim
    • Kwang-Hyun Kim
    • G11C7/10G11C7/02
    • G11C7/1006G11C7/1012G11C11/4093G11C11/4097G11C2207/002
    • A semiconductor memory device includes data transmission devices for transmit data in synchronization with each other. The semiconductor memory device includes a plurality of data transferring unit, a first control unit, a multiplexing unit, and a second control unit. The plurality of data transferring unit transfers data to a plurality of global lines. The first control unit controls the plurality of data transferring unit in response to a column select signal to select a column of a memory cell. The multiplexing unit multiplexes the data transferred to the plurality of global lines. The second control unit controls the multiplexing unit, wherein the second control unit synchronizes the column select signal with a column address signal having a column address information of the memory cell.
    • 半导体存储器件包括用于彼此同步地发送数据的数据传输装置。 半导体存储器件包括多个数据传送单元,第一控制单元,复用单元和第二控制单元。 多个数据传送单元将数据传送到多条全局线路。 第一控制单元响应于列选择信号控制多个数据传送单元以选择存储单元的列。 复用单元复用传输到多条全局线路的数据。 第二控制单元控制复用单元,其中第二控制单元将列选择信号与具有存储单元的列地址信息的列地址信号同步。