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1. 发明授权

US08379477B2 Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same 有权
标题翻译：子字线驱动电路，具有其的半导体存储器件及其控制方法
公开(公告)号：US08379477B2
公开(公告)日：2013-02-19
申请号：US13019858
申请日：2011-02-02
申请人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
发明人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
IPC分类号： G11C8/10
CPC分类号： G11C8/14 , G11C8/08
摘要： Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.
摘要翻译：提供了一种半导体存储器件，其包括能够减少由耦合引起的漏电流量的子字线驱动电路。半导体存储器件包括字线使能信号发生电路和子字线驱动电路。子字线驱动电路在所选字线的有效模式之后的预充电模式中的脉冲类型时段期间，在所选字线和地之间提供下拉电流路径，生成字线驱动信号主字线驱动信号的基础，第一子字线控制信号和第二子字线控制信号，并将字线驱动信号提供给存储单元阵列。半导体存储器件可以减少通过子字线驱动电路流向地的漏电流量。

2. 发明申请

US20110199808A1 MEMORY DEVICE FROM WHICH DUMMY EDGE MEMORY BLOCK IS REMOVED 有权
标题翻译：删除了DUMMY边缘存储块的存储器件
公开(公告)号：US20110199808A1
公开(公告)日：2011-08-18
申请号：US13023738
申请日：2011-02-09
申请人： Chul-woo YI , Seong-jin JANG , Jin-seok KWAK , Tai-young KO , Joung-yeal KIM , Sang-yun KIM , Sang-kyun PARK , Jung-bae LEE
发明人： Chul-woo YI , Seong-jin JANG , Jin-seok KWAK , Tai-young KO , Joung-yeal KIM , Sang-yun KIM , Sang-kyun PARK , Jung-bae LEE
IPC分类号： G11C5/06 , G11C5/10 , H01L21/02
CPC分类号： G11C5/063 , G11C7/062 , G11C7/065 , G11C7/18 , G11C11/4091 , G11C11/4097 , H01L27/0207 , H01L27/105 , H01L27/10885 , H01L27/10897 , Y10T29/41
摘要： A semiconductor memory device having an open bitline memory structure from which an edge dummy memory block is removed, the semiconductor memory device includes a memory block, an edge sense amplification block including a first sense amplifier having a first bitline, a first complementary bitline, and a first amplification circuit comprising a first transistor having a first size, a central sense amplification block including a second sense amplifier having a second bitline, a second complementary bitline, and a second amplification circuit comprising a second transistor having a second size different from the first size, a capacitor block electrically connected to the edge sense amplification block.
摘要翻译：一种具有开放位线存储器结构的半导体存储器件，其中除去边缘伪存储器块，所述半导体存储器件包括存储器块，边沿读出放大块，其包括第一读出放大器，所述第一读出放大器具有第一位线，第一互补位线和第一放大电路，包括具有第一尺寸的第一晶体管，中央读出放大块，包括具有第二位线的第二读出放大器，第二互补位线和第二放大电路，所述第二放大电路包括第二晶体管，电容器块电连接到边缘检测放大块。

3. 发明授权

US07940116B2 Fuse circuit and semiconductor device including the same 有权
标题翻译：保险丝电路和包括其的半导体器件
公开(公告)号：US07940116B2
公开(公告)日：2011-05-10
申请号：US12591720
申请日：2009-11-30
申请人： Sang-Kyun Park
发明人： Sang-Kyun Park
IPC分类号： H01H37/76 , H01H85/00
CPC分类号： G11C17/18 , G11C5/148 , H01H2085/0283
摘要： A fuse circuit may include a fuse section which generates a fuse control signal at an output terminal of the fuse circuit in response to a power-up signal according to a status of a fuse in the fuse section; and a current path break section which detects the status of the fuse in the fuse section prior to a trip period of the power-up signal and breaks an inrush current path created in the fuse section during the trip period based on the detected status.
摘要翻译：熔丝电路可以包括熔丝部分，其根据熔丝部分中的熔丝的状态响应于上电信号在熔丝电路的输出端产生熔丝控制信号; 以及电流路径断开部分，其基于检测到的状态，在上电信号的跳闸时段之前检测熔丝部分中的熔丝的状态，并且在跳闸期间中断在熔丝部分中产生的浪涌电流路径。

4. 发明申请

US20100308896A1 Fuse circuit and semiconductor device including the same 有权
标题翻译：保险丝电路和包括其的半导体器件
公开(公告)号：US20100308896A1
公开(公告)日：2010-12-09
申请号：US12591720
申请日：2009-11-30
申请人： Sang-Kyun Park
发明人： Sang-Kyun Park
IPC分类号： H01H85/00
CPC分类号： G11C17/18 , G11C5/148 , H01H2085/0283
摘要： A fuse circuit may include a fuse section which generates a fuse control signal at an output terminal of the fuse circuit in response to a power-up signal according to a status of a fuse in the fuse section; and a current path break section which detects the status of the fuse in the fuse section prior to a trip period of the power-up signal and breaks an inrush current path created in the fuse section during the trip period based on the detected status.
摘要翻译：熔丝电路可以包括熔丝部分，其根据熔丝部分中的熔丝的状态响应于上电信号在熔丝电路的输出端产生熔丝控制信号; 以及电流路径断开部分，其基于检测到的状态，在上电信号的跳闸时段之前检测熔丝部分中的熔丝的状态，并且在跳闸期间中断在熔丝部分中产生的浪涌电流路径。

5. 发明授权

US07692995B2 Redundancy program circuit and methods thereof 有权
标题翻译：冗余编程电路及其方法
公开(公告)号：US07692995B2
公开(公告)日：2010-04-06
申请号：US12314970
申请日：2008-12-19
申请人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
发明人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
IPC分类号： G11C17/18
CPC分类号： G11C29/812 , G11C29/785 , G11C29/787
摘要： A redundancy program circuit and methods thereof. The redundancy program circuit may include a master fuse circuit with a master fuse outputting an operation enable signal to indicate a master fuse operating status, at least one control fuse circuit including at least one control fuse, the at least one control fuse circuit outputting an operating status signal for the at least one control fuse and a multiplexing unit configured to multiplex decoding address signal bits based on at least one of the operating status signal and the operation enable signal.
摘要翻译：一种冗余程序电路及其方法。冗余程序电路可以包括具有主熔丝的主熔丝电路，其输出用于指示主熔丝运行状态的操作使能信号，至少一个控制熔丝电路，包括至少一个控制熔丝，所述至少一个控制熔丝电路输出操作用于所述至少一个控制熔丝的状态信号和被配置为基于所述操作状态信号和所述操作使能信号中的至少一个来复用解码地址信号位的复用单元。

6. 发明授权

US07609580B2 Redundancy program circuit and methods thereof 有权
公开(公告)号：US07609580B2
公开(公告)日：2009-10-27
申请号：US12314969
申请日：2008-12-19
申请人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
发明人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
IPC分类号： G11C17/18
CPC分类号： G11C29/812 , G11C29/785 , G11C29/787
摘要： A redundancy program circuit and methods thereof. The redundancy program circuit may include a master fuse circuit with a master fuse outputting an operation enable signal to indicate a master fuse operating status, at least one control fuse circuit including at least one control fuse, the at least one control fuse circuit outputting an operating status signal for the at least one control fuse and a multiplexing unit configured to multiplex decoding address signal bits based on at least one of the operating status signal and the operation enable signal.

7. 发明申请

US20080056034A1 Redundancy program circuit and methods thereof 失效
标题翻译：冗余编程电路及其方法
公开(公告)号：US20080056034A1
公开(公告)日：2008-03-06
申请号：US11978579
申请日：2007-10-30
申请人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
发明人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
IPC分类号： G11C29/00 , G11C17/18
CPC分类号： G11C29/812 , G11C29/785 , G11C29/787
摘要： A redundancy program circuit and methods thereof. The redundancy program circuit may include a master fuse circuit with a master fuse outputting an operation enable signal to indicate a master fuse operating status, at least one control fuse circuit including at least one control fuse, the at least one control fuse circuit outputting an operating status signal for the at least one control fuse and a multiplexing unit configured to multiplex decoding address signal bits based on at least one of the operating status signal and the operation enable signal.
摘要翻译：一种冗余程序电路及其方法。冗余程序电路可以包括具有主熔丝的主熔丝电路，其输出用于指示主熔丝运行状态的操作使能信号，至少一个控制熔丝电路，包括至少一个控制熔丝，所述至少一个控制熔丝电路输出操作用于所述至少一个控制熔丝的状态信号和被配置为基于所述操作状态信号和所述操作使能信号中的至少一个来复用解码地址信号位的复用单元。

8. 发明申请

US20060146233A1 Image sensor with enlarged photo detection area and method for fabricating the same 有权
标题翻译：具有放大光检测区域的图像传感器及其制造方法
公开(公告)号：US20060146233A1
公开(公告)日：2006-07-06
申请号：US11321772
申请日：2005-12-28
申请人： Sang-Kyun Park
发明人： Sang-Kyun Park
IPC分类号： G02F1/1335
CPC分类号： H01L27/14634 , H01L27/1464 , H01L27/1469
摘要： A complementary metal oxide semiconductor (CMOS) device with a three dimensional integration structure and a method for fabricating the same are provided. An image sensor includes a first substrate in which a photo detection device is formed; a second substrate in which a peripheral circuit is formed, wherein the first substrate and the second substrate are bonded through a plurality of bonding pads formed on both the first substrate and the second substrate, and a back side of the first substrate is turned upside down; and a microlens formed on a top portion of the back side of the first substrate.
摘要翻译：提供具有三维积分结构的互补金属氧化物半导体（CMOS）器件及其制造方法。图像传感器包括其中形成有光检测装置的第一基板; 其中形成有外围电路的第二基板，其中第一基板和第二基板通过形成在第一基板和第二基板上的多个接合焊盘接合，并且第一基板的背面被倒置 ; 以及形成在第一基板的背面的顶部上的微透镜。

9. 发明授权

US07056801B2 Radio frequency integrated circuit, and method for manufacturing the same 有权
标题翻译：射频集成电路及其制造方法
公开(公告)号：US07056801B2
公开(公告)日：2006-06-06
申请号：US10878567
申请日：2004-06-29
申请人： Sang Kyun Park , Chan Soo Shin
发明人： Sang Kyun Park , Chan Soo Shin
IPC分类号： H01L21/8232 , H01L21/4763
CPC分类号： H01L27/0611 , H01L23/5227 , H01L25/0657 , H01L2225/06541 , H01L2924/0002 , H01L2924/00
摘要： The present invention discloses a radio frequency integrated circuit and a method for manufacturing the same. The radio frequency integrated circuit is manufactured by forming an inductor and a passivation layer on an insulator substrate of a first substrate, forming an element layer having a multi-layer wiring structure on a semiconductor substrate, an inductor coupling line formed on the top portion of the element layer, first and second via contact plugs formed on the inductor coupling line, and an input/output pad coupled to the second via contact plug on a second substrate, and bonding the first substrate onto the second substrate, so that the inductor of the first substrate can be coupled to the first via contact plug of the second substrate. As a result, the radio frequency integrated circuit includes the inductor having a high Q value, by forming the inductor sufficiently separately from the semiconductor substrate on which the elements have been formed.
摘要翻译：本发明公开了一种射频集成电路及其制造方法。射频集成电路通过在第一基板的绝缘体基板上形成电感器和钝化层来制造，在半导体基板上形成具有多层布线结构的元件层，形成在第一基板的顶部上的电感器耦合线元件层，形成在电感器耦合线上的第一和第二通孔接触插塞以及耦合到第二衬底上的第二通孔接触插塞的输入/输出焊盘，以及将第一衬底接合到第二衬底上，使得电感器第一衬底可以耦合到第二衬底的第一通孔接触插塞。结果，射频集成电路包括具有高Q值的电感器，通过与其上已经形成有元件的半导体衬底分开形成电感器。

10. 发明申请

US20060002204A1 Redundancy program circuit and methods thereof 有权
公开(公告)号：US20060002204A1
公开(公告)日：2006-01-05
申请号：US11169831
申请日：2005-06-30
申请人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
发明人： Jeong-Sik Nam , Sang-Kyun Park , Kwang-Hyun Kim , Byung-Sik Moon , Won-Chang Jung
IPC分类号： G11C29/00
CPC分类号： G11C29/812 , G11C29/785 , G11C29/787
摘要： A redundancy program circuit and methods thereof. The redundancy program circuit may include a master fuse circuit with a master fuse outputting an operation enable signal to indicate a master fuse operating status, at least one control fuse circuit including at least one control fuse, the at least one control fuse circuit outputting an operating status signal for the at least one control fuse and a multiplexing unit configured to multiplex decoding address signal bits based on at least one of the operating status signal and the operation enable signal.

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