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21. 发明授权

US08728883B2 Semiconductor device and method for manufacturing semiconductor device 有权
标题翻译：半导体装置及半导体装置的制造方法
公开(公告)号：US08728883B2
公开(公告)日：2014-05-20
申请号：US13297474
申请日：2011-11-16
申请人： Shunpei Yamazaki , Masahiro Takahashi , Tetsunori Maruyama
发明人： Shunpei Yamazaki , Masahiro Takahashi , Tetsunori Maruyama
IPC分类号： H01L21/84 , H01L29/66
CPC分类号： H01L29/06 , H01L21/0242 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02513 , H01L21/02554 , H01L21/02565 , H01L21/0259 , H01L29/36 , H01L29/66969 , H01L29/7869 , H01L29/78693
摘要： A highly reliable semiconductor device is manufactured by giving stable electric characteristics to a transistor in which an oxide semiconductor film is used for a channel. An oxide semiconductor film which can have a first crystal structure by heat treatment and an oxide semiconductor film which can have a second crystal structure by heat treatment are formed so as to be stacked, and then heat treatment is performed; accordingly, crystal growth occurs with the use of an oxide semiconductor film having the second crystal structure as a seed, so that an oxide semiconductor film having the first crystal structure is formed. An oxide semiconductor film formed in this manner is used for an active layer of the transistor.
摘要翻译：通过向其中使用氧化物半导体膜的通道的晶体管提供稳定的电特性来制造高度可靠的半导体器件。通过热处理可以具有第一晶体结构的氧化物半导体膜和通过热处理可以具有第二晶体结构的氧化物半导体膜被形成为堆叠，然后进行热处理; 因此，通过使用具有第二晶体结构的氧化物半导体膜作为种子发生晶体生长，从而形成具有第一晶体结构的氧化物半导体膜。以这种方式形成的氧化物半导体膜用于晶体管的有源层。

22. 发明授权

US08686425B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08686425B2
公开(公告)日：2014-04-01
申请号：US13584840
申请日：2012-08-14
申请人： Shunpei Yamazaki , Takuya Hirohashi , Masahiro Takahashi , Takashi Shimazu
发明人： Shunpei Yamazaki , Takuya Hirohashi , Masahiro Takahashi , Takashi Shimazu
IPC分类号： H01L31/112 , H01L21/00
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.
摘要翻译：可以使用较大的衬底，并且可以通过形成具有高结晶度的氧化物半导体层来制造具有期望的高场敏性迁移率的晶体管，由此大尺寸显示装置，高性能半导体器件，等可以投入实际使用。在衬底上形成第一多组分氧化物半导体层，并在其上形成单组分氧化物半导体层; 然后通过在500℃至1000℃（包括端值）进行热处理从表面向内部进行晶体生长，优选550℃至750℃，从而使第一多组分氧化物半导体层包括单晶区域和形成包括单晶区域的单组分氧化物半导体层; 并且包括单晶区域的第二多分量氧化物半导体层堆叠在包括单晶区域的单组分氧化物半导体层上。

23. 发明授权

US08669556B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08669556B2
公开(公告)日：2014-03-11
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

24. 发明授权

US08530285B2 Method for manufacturing semiconductor device 有权
公开(公告)号：US08530285B2
公开(公告)日：2013-09-10
申请号：US12976388
申请日：2010-12-22
申请人： Shunpei Yamazaki , Takuya Hirohashi , Masahiro Takahashi , Takashi Shimazu
发明人： Shunpei Yamazaki , Takuya Hirohashi , Masahiro Takahashi , Takashi Shimazu
IPC分类号： H01L21/00 , H01L21/336 , H01L27/108
CPC分类号： H01L29/66742 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02502 , H01L21/02554 , H01L21/02565 , H01L21/02631 , H01L21/02667 , H01L27/1225 , H01L29/66969 , H01L29/7869
摘要： A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions.

25. 发明授权

US09911856B2 Semiconductor device 有权
公开(公告)号：US09911856B2
公开(公告)日：2018-03-06
申请号：US12900145
申请日：2010-10-07
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
IPC分类号： H01L29/786 , H01L29/423
CPC分类号： H01L29/7869 , H01L29/42384 , H01L29/78606 , H01L29/78696
摘要： One of objects is to provide a semiconductor device with stable electric characteristics, in which an oxide semiconductor is used. The semiconductor device includes a thin film transistor including an oxide semiconductor layer, and a silicon oxide layer over the thin film transistor. The thin film transistor includes a gate electrode layer, a gate insulating layer whose thickness is equal to or larger than 100 nm and equal to or smaller than 350 nm, the oxide semiconductor layer, a source electrode layer and a drain electrode layer. In the thin film transistor, the difference of the threshold voltage value is 1 V or less between before and after performance of a measurement in which the voltage of 30 V or −30 V is applied to the gate electrode layer at a temperature of 85° C. for 12 hours.

26. 发明授权

US09627198B2 Method for manufacturing thin film semiconductor device 有权
公开(公告)号：US09627198B2
公开(公告)日：2017-04-18
申请号：US12894791
申请日：2010-09-30
申请人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
发明人： Shunpei Yamazaki , Akiharu Miyanaga , Masahiro Takahashi , Hideyuki Kishida , Junichiro Sakata
IPC分类号： H01L21/00 , H01L21/84 , H01L21/02 , H01L29/786 , H01L27/12
CPC分类号： H01L21/02554 , G02F1/1368 , G02F1/167 , H01L21/02164 , H01L21/02172 , H01L21/02266 , H01L21/02422 , H01L21/02565 , H01L21/02631 , H01L21/477 , H01L27/1225 , H01L27/127 , H01L27/3262 , H01L29/24 , H01L29/66969 , H01L29/7869 , H01L29/78696
摘要： An object is to provide a semiconductor device with stable electric characteristics in which an oxide semiconductor is used. The impurity concentration in the oxide semiconductor layer is reduced in the following manner: a silicon oxide layer including many defects typified by dangling bonds is formed in contact with the oxide semiconductor layer, and an impurity such as hydrogen or moisture (a hydrogen atom or a compound including a hydrogen atom such as H2O) included in the oxide semiconductor layer is diffused into the silicon oxide layer. Further, a mixed region is provided between the oxide semiconductor layer and the silicon oxide layer. The mixed region includes oxygen, silicon, and at least one kind of metal element that is included in the oxide semiconductor.

27. 发明授权

US09136388B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09136388B2
公开(公告)日：2015-09-15
申请号：US13549867
申请日：2012-07-16
申请人： Shunpei Yamazaki , Masahiro Takahashi , Tatsuya Honda , Takehisa Hatano
发明人： Shunpei Yamazaki , Masahiro Takahashi , Tatsuya Honda , Takehisa Hatano
IPC分类号： H01L29/26 , H01L29/786
CPC分类号： H01L29/7869 , H01L29/24 , H01L29/78618
摘要： Provided is a structure of a transistor, which enables a so-called normally-off switching element, and a manufacturing method thereof. Provided is a structure of a semiconductor device which achieves high-speed response and high-speed operation by improving on characteristics of a transistor, and a manufacturing method thereof. Provided is a highly reliable semiconductor device. In the transistor in which a semiconductor layer, source and drain electrode layers, a gate insulating layer, and a gate electrode layer are stacked in that order. As the semiconductor layer, an oxide semiconductor layer which contains at least four kinds of elements of indium, gallium, zinc, and oxygen, and has a composition ratio (atomic percentage) of indium as twice or more as a composition ratio of gallium and a composition ratio of zinc, is used.
摘要翻译：提供了能够实现所谓的常关断开关元件的晶体管的结构及其制造方法。提供了通过提高晶体管的特性实现高速响应和高速操作的半导体器件的结构及其制造方法。提供了一种高度可靠的半导体器件。在其中半导体层，源极和漏极电极层，栅极绝缘层和栅极电极层以该顺序堆叠的晶体管中。作为半导体层，含有铟，镓，锌和氧中的至少四种元素的氧化物半导体层，铟的组成比（原子百分比）为镓和a的组成比的两倍以上使用锌的组成比。

28. 发明申请

US20110084272A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20110084272A1
公开(公告)日：2011-04-14
申请号：US12900136
申请日：2010-10-07
申请人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
发明人： Akiharu Miyanaga , Junichiro Sakata , Masayuki Sakakura , Masahiro Takahashi , Hideyuki Kishida , Shunpei Yamazaki
IPC分类号： H01L29/22 , H01L21/336
CPC分类号： H01L29/7869 , H01L27/1214 , H01L27/1222 , H01L27/1225 , H01L27/3262 , H01L29/42384 , H01L29/45 , H01L29/4908 , H01L29/78618
摘要： An object is to provide a thin film transistor having favorable electric characteristics and a semiconductor device including the thin film transistor as a switching element. The thin film transistor includes a gate electrode formed over an insulating surface, a gate insulating film over the gate electrode, an oxide semiconductor film which overlaps with the gate electrode over the gate insulating film and which includes a layer where the concentration of one or a plurality of metals contained in the oxide semiconductor is higher than that in other regions, a pair of metal oxide films formed over the oxide semiconductor film and in contact with the layer, and a source electrode and a drain electrode in contact with the metal oxide films. The metal oxide films are formed by oxidation of a metal contained in the source electrode and the drain electrode.
摘要翻译：目的是提供一种具有良好电特性的薄膜晶体管和包括薄膜晶体管作为开关元件的半导体器件。薄膜晶体管包括形成在绝缘表面上的栅极电极，栅电极上的栅极绝缘膜，与栅极绝缘膜上的栅电极重叠的氧化物半导体膜，并且包括其中浓度为1或包含在氧化物半导体中的多种金属高于其他区域，形成在氧化物半导体膜上并与该层接触的一对金属氧化物膜，以及与金属氧化物膜接触的源电极和漏电极。金属氧化物膜通过氧化源电极和漏电极中所含的金属而形成。

29. 发明授权

US10141120B2 Power storage system and manufacturing method thereof and secondary battery and capacitor 有权
公开(公告)号：US10141120B2
公开(公告)日：2018-11-27
申请号：US13033877
申请日：2011-02-24
申请人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
发明人： Shunpei Yamazaki , Tamae Moriwaka , Kazutaka Kuriki , Mikio Yukawa
IPC分类号： H01M6/04 , H01G11/26 , H01G11/46 , H01M4/131 , H01M4/134 , H01M4/1395 , H01M4/36 , H01M4/587 , H01M4/62 , H01M10/0525 , H01M10/0561 , H01G11/28 , H01G11/32 , H01M4/02
摘要： The present invention relates to a power storage system including a negative electrode which has a crystalline silicon film provided as a negative electrode active material on the surface of a current collector and contains a conductive oxide in a surface layer section of the crystalline silicon film. Alternatively, the present invention relates to a method for manufacturing a power storage system, which includes the step of forming an amorphous silicon film on a current collector, adding a catalytic element for promoting crystallization of the amorphous silicon, onto a surface of the amorphous silicon film, heating the amorphous silicon film with the catalytic element added to crystallize the amorphous silicon film and thereby form a crystalline silicon film, and using the crystalline silicon film as a negative electrode active material layer.

30. 发明授权

US09887568B2 Moving object, wireless power feeding system, and wireless power feeding method 有权
公开(公告)号：US09887568B2
公开(公告)日：2018-02-06
申请号：US13023122
申请日：2011-02-08
申请人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
发明人： Shunpei Yamazaki , Jun Koyama , Yutaka Shionoiri
IPC分类号： H02J7/00 , H02J7/14 , H02J17/00 , B60L11/00 , B60L11/18
CPC分类号： H02J7/0054 , B60L11/007 , B60L11/182 , B60L11/1833 , B60L2200/10 , B60L2200/12 , B60L2200/26 , H02J7/025 , H02J7/1407 , H02J17/00 , H02J50/10 , H02J50/12 , H02J50/20 , H02J50/40 , H02J50/90 , Y02T10/7005 , Y02T10/7072 , Y02T90/12 , Y02T90/121 , Y02T90/122 , Y02T90/125 , Y02T90/14
摘要： An object is to provide a moving object structure capable of reducing power loss caused when power is supplied from a power feeding device to a moving object by wireless communication. Another object is to provide a moving object structure capable of reducing the intensity of radio waves radiated to the surroundings. A moving object having a plurality of antennas receives radio waves transmitted from a power feeding device. At least one of the plurality of antennas is installed apart from the other antenna(s) of the moving object. Then, the radio waves transmitted from the power feeding device are received by all the plurality of antennas and converted into electric energy. Alternatively, the radio waves transmitted from the power feeding device are received by one or more selected from the plurality of antennas and converted into electric energy.

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