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1. 发明授权

US08901552B2 Top gate thin film transistor with multiple oxide semiconductor layers 有权
标题翻译：具有多个氧化物半导体层的顶栅薄膜晶体管
公开(公告)号：US08901552B2
公开(公告)日：2014-12-02
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Yusuke Nonaka , Takayuki Inoue , Masashi Tsubuku , Kengo Akimoto , Akiharu Miyanaga
IPC分类号： H01L29/12 , H01L29/04 , H01L31/036 , H01L31/0376 , H01L31/20 , H01L27/01 , H01L27/12 , H01L21/02 , H01L29/786
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

2. 发明授权

US08669556B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08669556B2
公开(公告)日：2014-03-11
申请号：US13307398
申请日：2011-11-30
申请人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
发明人： Shunpei Yamazaki , Masashi Tsubuku , Kengo Akimoto , Hiroki Ohara , Tatsuya Honda , Takatsugu Omata , Yusuke Nonaka , Masahiro Takahashi , Akiharu Miyanaga
IPC分类号： H01L29/04
CPC分类号： H01L29/78696 , H01L29/045 , H01L29/1033 , H01L29/247 , H01L29/7869 , H01L29/78693
摘要： An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided.
摘要翻译：提供了具有更稳定的导电性的氧化物半导体膜。此外，通过使用氧化物半导体膜提供具有稳定的电特性和高可靠性的半导体器件。氧化物半导体膜包括结晶区域，并且结晶区域包括其中a-b平面基本上平行于膜的表面并且c轴基本上垂直于膜的表面的晶体; 氧化物半导体膜具有稳定的导电性，并且相对于可见光，紫外线等的照射而言更加电稳定。通过使用这种用于晶体管的氧化物半导体膜，可以提供具有稳定电特性的高可靠性半导体器件。

3. 发明授权

US08429667B2 Storage system and method for controlling the same 有权
标题翻译：存储系统及其控制方法
公开(公告)号：US08429667B2
公开(公告)日：2013-04-23
申请号：US13407995
申请日：2012-02-29
申请人： Junji Ogawa , Yusuke Nonaka , Yuko Matsui
发明人： Junji Ogawa , Yusuke Nonaka , Yuko Matsui
IPC分类号： G06F9/46 , G06F15/00
CPC分类号： G06F3/0689 , G06F3/061 , G06F3/0631 , G06F3/0647 , G06F3/0658 , G06F9/5083
摘要： Optimum load distribution processing is selected and executed based on settings made by a user in consideration of load changes caused by load distribution in a plurality of asymmetric cores, by using: a controller having a plurality of cores, and configured to extract, for each LU, a pattern showing the relationship between a core having an LU ownership and a candidate core as an LU ownership change destination based on LU ownership management information; to measure, for each LU, the usage of a plurality of resources; to predicate, for each LU based on the measurement results, a change in the usage of the plurality of resources and overhead to be generated by transfer processing itself; to select, based on the respective prediction results, a pattern that matches the user's setting information; and to transfer the LU ownership to the core belonging to the selected pattern.
摘要翻译：基于由多个不对称核心中的负载分布引起的负载变化，由用户进行的设定，选择并执行最佳负载分配处理，所述控制器具有多个核心，并且被配置为针对每个LU 基于LU所有权管理信息，示出具有LU所有权的核心和候选核心作为LU所有权更改目的地之间的关系的模式; 为每个LU测量多个资源的使用; 根据测量结果对每个LU进行谓词，改变多个资源的使用和由传输处理本身产生的开销; 基于相应的预测结果来选择与用户的设置信息匹配的模式; 并将LU所有权转移到属于所选模式的核心。

4. 发明授权

US08405178B2 Solid-state image sensor device 有权
标题翻译：固态图像传感器装置
公开(公告)号：US08405178B2
公开(公告)日：2013-03-26
申请号：US12842220
申请日：2010-07-23
申请人： Shinya Sugino , Satoshi Sakai , Yusuke Nonaka , Tomohiro Saito , Tomoyasu Furukawa , Hiroyuki Hayashi
发明人： Shinya Sugino , Satoshi Sakai , Yusuke Nonaka , Tomohiro Saito , Tomoyasu Furukawa , Hiroyuki Hayashi
IPC分类号： H01L23/48
CPC分类号： H01L27/14605 , H01L27/14623 , H01L27/14627 , H01L27/1463 , H01L27/14636 , H01L2924/0002 , H01L2924/00
摘要： In a solid-state image sensor device, the efficiency of light collection to a light-receiving region of a photodiode PD through a microlens is enhanced by arranging a wiring line configuration. Each of the first metal layer and the second metal layer is arranged to have a ring-like portion formed along a profile of the light-receiving region of the photodiode PD in a fashion that an upper position over the photodiode PD is surrounded by the first and second metal layers and a third metal layer.
摘要翻译：在固态图像传感器装置中，通过布置布线配置来增强通过微透镜对光电二极管PD的光接收区域的光采集效率。第一金属层和第二金属层中的每一个被布置成具有沿着光电二极管PD的光接收区域的轮廓形成的环状部分，其方式是光电二极管PD上的上部位置被第一和第二金属层和第三金属层。

5. 发明授权

US08326939B2 Storage system that transfers system information elements 有权
标题翻译：传输系统信息元素的存储系统
公开(公告)号：US08326939B2
公开(公告)日：2012-12-04
申请号：US12068088
申请日：2008-02-01
申请人： Koichi Ueno , Koji Nagata , Yusuke Nonaka
发明人： Koichi Ueno , Koji Nagata , Yusuke Nonaka
IPC分类号： G06F15/16
CPC分类号： G06F3/0647 , G06F3/0604 , G06F3/067 , G06F11/2092
摘要： A first storage system that has a first storage device comprises a first interface device that is connected to a second interface device that a second storage system has. A first controller of the first storage system reads system information elements of first system information (information relating to the constitution and control of the first storage system) from a first system area (a storage area that is not provided for the host of the first storage device) and transfers the system information elements or modified system information elements to the second storage system via the first interface device. The system information elements are recorded in a second system area in a second storage device that the second storage system has.
摘要翻译：具有第一存储设备的第一存储系统包括连接到第二存储系统具有的第二接口设备的第一接口设备。第一存储系统的第一控制器从第一系统区域（不为第一存储器的主机提供的存储区域）读取第一系统信息的系统信息（与第一存储系统的结构和控制有关的信息）设备），并且经由第一接口设备将系统信息元素或修改的系统信息元素传送到第二存储系统。系统信息元素被记录在第二存储系统所具有的第二存储装置中的第二系统区域中。

6. 发明申请

US20120061663A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20120061663A1
公开(公告)日：2012-03-15
申请号：US13226713
申请日：2011-09-07
申请人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
发明人： Shunpei YAMAZAKI , Yusuke NONAKA , Takayuki INOUE , Masashi TSUBUKU , Kengo AKIMOTO , Akiharu MIYANAGA
IPC分类号： H01L29/12 , H01L21/34
CPC分类号： H01L29/7869 , H01L21/02488 , H01L21/02554 , H01L21/02565 , H01L29/04 , H01L29/24 , H01L29/78603
摘要： An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al2O3, α-Ga2O3, In2O3, Ti2O3, V2O3, Cr2O3, or α-Fe2O3) is used.
摘要翻译：本发明的目的是提供一种具有稳定的电气特性和高可靠性的氧化物半导体膜的半导体装置。通过在绝缘表面上形成厚度为1nm至10nm的第一材料膜（具有六方晶体结构的膜）形成第一和第二材料膜的叠层，并形成具有六方晶系结构的第二材料膜（使用第一材料膜作为核的结晶氧化物半导体膜）。作为第一材料膜，具有纤锌矿晶体结构的材料膜（例如氮化镓或氮化铝）或具有刚玉晶体结构的材料膜（α-Al 2 O 3，α-Ga 2 O 3，In 2 O 3，Ti 2 O 3，V 2 O 3，Cr 2 O 3，或 α-Fe 2 O 3）。

7. 发明申请

US20110217815A1 MANUFACTURING METHOD OF OXIDE SEMICONDUCTOR FILM AND MANUFACTURING METHOD OF TRANSISTOR 有权
标题翻译：氧化物半导体膜的制造方法和晶体管的制造方法
公开(公告)号：US20110217815A1
公开(公告)日：2011-09-08
申请号：US13034725
申请日：2011-02-25
申请人： Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA
发明人： Tatsuya HONDA , Takatsugu OMATA , Yusuke NONAKA
IPC分类号： H01L21/336 , H01L21/20
CPC分类号： H01L21/02631 , H01L21/0237 , H01L21/02422 , H01L21/02472 , H01L21/02483 , H01L21/02554 , H01L21/02565 , H01L21/02614 , H01L21/02667 , H01L29/66969 , H01L29/7869
摘要： An object is to provide a manufacturing method of an oxide semiconductor film with high crystallinity. Another object is to provide a manufacturing method of a transistor with high field effect mobility. In a manufacturing method of an oxide semiconductor film, an oxide semiconductor film is formed over a substrate in an atmosphere in which oxygen is purposely not contained, and then the oxide semiconductor film is crystallized by a heat treatment in an atmosphere containing oxygen.
摘要翻译：目的在于提供具有高结晶度的氧化物半导体膜的制造方法。另一个目的是提供具有高场效应迁移率的晶体管的制造方法。在氧化物半导体膜的制造方法中，在不含氧的气氛中的基板上形成氧化物半导体膜，然后通过在含氧气氛中的热处理使氧化物半导体膜结晶化。

8. 发明申请

US20100082923A1 DEVICE FOR CONTROL OF SWITCHING OF STORAGE SYSTEM 有权
标题翻译：用于控制存储系统切换的设备
公开(公告)号：US20100082923A1
公开(公告)日：2010-04-01
申请号：US12276634
申请日：2008-11-24
申请人： Shunichi WAKABAYASHI , Kosuke SAKAI , Yusuke NONAKA
发明人： Shunichi WAKABAYASHI , Kosuke SAKAI , Yusuke NONAKA
IPC分类号： G06F12/02 , G06F12/00 , G06F12/16
CPC分类号： G06F11/2069 , G06F3/0617 , G06F3/0635 , G06F3/0647 , G06F3/067 , G06F11/2071 , G06F11/2082
摘要： A storage system includes a controller that controls switching from a system before switching to a system after switching. The controller includes a check unit that checks whether a connection between the system before switching and the system after switching is enabled, or not, a determination unit that determines whether switching from the system before switching to the system after switching is enabled, or not, a fail-over information migration unit that migrates fail-over information included in the system before switching to the system after switching, a user data migration unit that migrates user data in the system before switching to the system after switching, and a switching execution unit that enables the system after switching to receive I/O from a host.
摘要翻译：存储系统包括控制器，其在切换到切换到系统之前控制从系统的切换。控制器包括检查单元，用于检查切换之前的系统与切换后的系统之间的连接是否被启用;确定单元，确定是否启用了在切换之后切换到系统之前从系统切换，故障切换信息迁移单元，其在切换后切换到系统之前迁移系统中包括的故障转移信息;用户数据迁移单元，其在切换到切换到系统之前迁移系统中的用户数据;切换执行单元这使得系统在切换后能够从主机接收I / O。

9. 发明申请

US20090089525A1 REMOTE COPY WITH WORM GUARANTEE 有权
标题翻译：远程复制与WORM保证
公开(公告)号：US20090089525A1
公开(公告)日：2009-04-02
申请号：US12330933
申请日：2008-12-09
申请人： Yusuke NONAKA , Naoto Matsunami , Akira Nishimoto , Yoichi Mizuno
发明人： Yusuke NONAKA , Naoto Matsunami , Akira Nishimoto , Yoichi Mizuno
IPC分类号： G06F12/16 , G06F12/00
CPC分类号： G06F11/2069
摘要： In the case in which data in a storage system A is remotely copied to a storage system B, it is not taken into account whether the data of the remote copy is WORM data. In the case in which a setting is made such that data stored in a volume in the storage system A is copied to a volume in the storage system B, storage system A judges whether an attribute to the effect that data can be referred to and can be updated or to the effect that data can be referred to but cannot be updated is added to the volume in the storage system A. Then, if the volume is a volume to which the attribute to the effect that data can be referred to but cannot be updated is added, such attribute is added to the volume in the storage system B.
摘要翻译：在将存储系统A中的数据远程复制到存储系统B的情况下，不考虑远程副本的数据是否是WORM数据。在存储系统A中的存储在卷中的数据被复制到存储系统B中的卷的设置的情况下，存储系统A判断是否可以引用可以参考数据的属性，并且可以被更新或者可以将数据引用但不能被更新的效果添加到存储系统A中的卷。然后，如果卷是能够引用数据的属性的卷，但是不能被添加，这样的属性被添加到存储系统B中的卷。

10. 发明授权

US07411253B2 CMOS transistors using gate electrodes to increase channel mobilities by inducing localized channel stress 失效
标题翻译：使用栅电极的CMOS晶体管通过引起局部沟道应力来增加沟道迁移率
公开(公告)号：US07411253B2
公开(公告)日：2008-08-12
申请号：US11641758
申请日：2006-12-20
申请人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
发明人： Akihiro Shimizu , Nagatoshi Ooki , Yusuke Nonaka , Katsuhiko Ichinose
IPC分类号： H01L27/092
CPC分类号： H01L29/7845 , H01L21/0217 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823842 , H01L21/823864 , H01L21/84 , H01L27/092 , H01L27/0922 , H01L29/665 , H01L29/6659 , H01L29/7843 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes an n channel conductivity type FET having a channel formation region formed in a first region on a main surface of a semiconductor substrate and a p channel conductivity type FET having a channel formation region formed in a second region of the main surface, which second region is different from the first region. An impurity concentration of a gate electrode of the n channel FET has an impurity concentration greater than an impurity concentration of the gate electrode of the p channel FET to thereby create a tensile stress in the direction of flow of a drain current in the channel forming region of the n channel FET. The tensile stress in the flow direction of the drain current in the channel forming region of the n channel FET is greater than a tensile stress in the direction of flow of a drain current in the channel forming region of the p channel FET.
摘要翻译：半导体器件包括n沟道导电型FET，其具有形成在半导体衬底的主表面上的第一区域中的沟道形成区域和形成在主表面的第二区域中的沟道形成区域的ap沟道导电型FET，第二区域与第一区域不同。 n沟道FET的栅电极的杂质浓度的杂质浓度大于p沟道FET的栅电极的杂质浓度，从而在沟道形成区域中的漏极电流的流动方向产生拉伸应力的n沟道FET。 n沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力大于p沟道FET的沟道形成区域中的漏极电流的流动方向的拉伸应力。

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