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21. 发明授权

US07068521B2 Semiconductor device 有权
公开(公告)号：US07068521B2
公开(公告)日：2006-06-27
申请号：US11194701
申请日：2005-08-02
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/58
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

22. 发明授权

US06943441B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US06943441B2
公开(公告)日：2005-09-13
申请号：US10291840
申请日：2002-11-12
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H01L23/04 , H01L23/49 , H01L23/498 , H01L23/552 , H01L23/66 , H01L29/22 , H03F3/195 , H03F3/60 , H05K1/00 , H05K1/02 , H05K1/18 , H05K3/40 , H01L21/60
CPC分类号： H01L24/06 , H01L23/04 , H01L23/49805 , H01L23/49822 , H01L23/49838 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/48 , H01L24/49 , H01L25/16 , H01L2223/6611 , H01L2223/6627 , H01L2223/6644 , H01L2223/6655 , H01L2224/05553 , H01L2224/05554 , H01L2224/05599 , H01L2224/45139 , H01L2224/45147 , H01L2224/4554 , H01L2224/45669 , H01L2224/48011 , H01L2224/48091 , H01L2224/48227 , H01L2224/484 , H01L2224/48799 , H01L2224/49111 , H01L2224/49113 , H01L2224/4912 , H01L2224/49175 , H01L2224/49433 , H01L2224/73265 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01021 , H01L2924/01023 , H01L2924/01027 , H01L2924/01029 , H01L2924/01047 , H01L2924/01051 , H01L2924/01078 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/15173 , H01L2924/15313 , H01L2924/15787 , H01L2924/16152 , H01L2924/19032 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3011 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/255 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/411 , H03F2200/423 , H03F2200/451 , H03F2200/543 , H03H7/383 , H05K1/0243 , H05K1/0298 , H05K1/183 , H05K3/403 , H01L2924/05432 , H01L2924/2065 , H01L2224/45099 , H01L2924/00
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is placed at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸小，将电连接到固定参考电位的线的衬底侧接合电极放置在比半导体芯片的离开半导体芯片的一侧更远的位置处，电连接到输出线。电连接到输入线的基板侧输入电极位于距离半导体芯片侧的距离大约等于从半导体芯片的侧面到基板侧输出电极的距离处，或者位于距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

23. 发明授权

US06617927B2 High frequency power amplifier module, and wireless communications system 失效
公开(公告)号：US06617927B2
公开(公告)日：2003-09-09
申请号：US10122382
申请日：2002-04-16
申请人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
发明人： Masahito Numanami , Hitoshi Akamine , Tsuyoshi Shibuya , Tetsuaki Adachi , Masatoshi Morikawa , Yasuhiro Nunogawa
IPC分类号： H03F316
CPC分类号： H01L29/7835 , H01L29/1045 , H01L29/4175 , H01L29/7831 , H01L2924/0002 , H03F1/02 , H03F1/223 , H03F3/24 , H03F3/601 , H03F3/72 , H03F2203/7206 , H03G1/007 , H04B2001/045 , H01L2924/00
摘要： A high frequency power amplifier module of a multistage amplifier construction comprising: an input terminal; an output terminal; a control terminal; and a mode switching terminal. The first amplification stage includes a dual gate FET, and a bias voltage according to a signal is applied to the first gate and the second gate of the dual gate FET from the control terminal and the mode switching terminal, and a radio signal from the input terminal is applied to the second gate such as the source of the dual gate FET. In dependence upon the signal from the mode switching terminal, the mode of the high frequency power amplifier module is for the GSM (i.e., for a non-linear amplifying action) and for the EDGE (for a linear amplifying action).

24. 发明授权

US06288612B1 Radio communication apparatus and radio frequency power amplifier 有权
公开(公告)号：US06288612B1
公开(公告)日：2001-09-11
申请号：US09722563
申请日：2000-11-28
申请人： Hirotaka Ueno , Yasuhiro Nunogawa , Tetsuaki Adachi
发明人： Hirotaka Ueno , Yasuhiro Nunogawa , Tetsuaki Adachi
IPC分类号： H03G330
CPC分类号： H03G3/3042 , H03G1/0088 , H03G3/3047
摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.

25. 发明授权

US06172567B2 Radio communication apparatus and radio frequency power amplifier 失效
标题翻译：无线电通信装置和射频功率放大器
公开(公告)号：US06172567B2
公开(公告)日：2001-01-09
申请号：US09385690
申请日：1999-08-30
申请人： Hirotaka Ueno , Yasuhiro Nunogawa , Tetsuaki Adachi
发明人： Hirotaka Ueno , Yasuhiro Nunogawa , Tetsuaki Adachi
IPC分类号： H03G330
CPC分类号： H03G3/3042 , H03G1/0088 , H03G3/3047
摘要： To reduce power consumption by increasing amplifying efficiency in a low power mode, there is provided a radio communication apparatus in which each of field effect transistors of a radio frequency power module in a multi-stage configuration is controlled by an APC circuit based on a power level instruction signal, and in which a correction circuit is incorporated between the gate of a final stage transistor and the APC circuit to apply a linear gate voltage to the final stage transistor when a High level signal based on the power level instruction signal is applied and to provide a maximum gate voltage of the final stage transistor which is equal to or lower than the gate voltages of other transistors and whose rate of increase relative to the output voltage of the APC circuit gradually reduces when a Low level signal based on the power instruction signal is applied. A high power mode is enabled when the output voltage of the APC circuit is equal to or higher than a prescribed voltage, and a low power mode is enabled when it is lower than the prescribed voltage.
摘要翻译：为了通过提高低功率模式的放大效率来降低功耗，提供了一种无线电通信装置，其中多级配置中的射频功率模块的场效应晶体管中的每一个基于功率由APC电路控制并且其中在最后级晶体管的栅极和APC电路之间并入校正电路，以在施加基于功率电平指令信号的高电平信号时将线性栅极电压施加到最终级晶体管;以及以提供等于或低于其他晶体管的栅极电压的最终栅极电压，并且当基于功率指令的低电平信号时，其相对于APC电路的输出电压的增加速率逐渐降低信号被施加。当APC电路的输出电压等于或高于规定电压时，使能高功率模式，低功耗模式在低于规定电压时使能。

26. 发明申请

US20100231304A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20100231304A1
公开(公告)日：2010-09-16
申请号：US12787154
申请日：2010-05-25
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H03F3/04
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.
摘要翻译：在诸如高频功率放大器模块的半导体器件中，在安装在布线基板的主表面上的半导体芯片上形成多个放大装置，并且半导体芯片的电极通过导线电连接到电极的布线基板。为了使高频功率放大器模块尺寸变小，将电连接到固定基准电位的导线的基板侧接合电极位于距离半导体芯片的一侧更靠近基板侧接合电极的位置，电连接到输出线。电连接到输入线的基板侧输入电极位于与半导体芯片的侧面相距一定距离处，等于从半导体芯片侧到基板侧输出电极的距离，或者距离半导体芯片半导体芯片的侧面比基板侧接合电极为止。

27. 发明授权

US07525813B2 Semiconductor device 有权
公开(公告)号：US07525813B2
公开(公告)日：2009-04-28
申请号：US11905421
申请日：2007-10-01
申请人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
发明人： Iwamichi Kohjiro , Yasuhiro Nunogawa , Sakae Kikuchi , Shizuo Kondo , Tetsuaki Adachi , Osamu Kagaya , Kenji Sekine , Eiichi Hase , Kiichi Yamashita
IPC分类号： H05K7/02 , H05K7/06 , H05K7/08 , H05K7/10
CPC分类号： H01L25/16 , H01L23/49844 , H01L23/552 , H01L23/645 , H01L23/66 , H01L24/06 , H01L24/48 , H01L24/49 , H01L2223/6611 , H01L2223/6644 , H01L2224/05554 , H01L2224/05599 , H01L2224/48091 , H01L2224/48227 , H01L2224/48799 , H01L2224/49113 , H01L2224/49175 , H01L2224/49433 , H01L2224/85399 , H01L2924/00014 , H01L2924/01005 , H01L2924/01014 , H01L2924/01015 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01078 , H01L2924/01082 , H01L2924/09701 , H01L2924/10161 , H01L2924/10253 , H01L2924/1305 , H01L2924/1306 , H01L2924/13091 , H01L2924/15153 , H01L2924/1517 , H01L2924/19105 , H01L2924/19107 , H01L2924/30107 , H01L2924/3025 , H03F1/56 , H03F3/195 , H03F3/213 , H03F3/604 , H03F2200/12 , H03F2200/168 , H03F2200/222 , H03F2200/318 , H03F2200/387 , H03F2200/408 , H03F2200/451 , H03H7/383 , H01L2924/00 , H01L2224/45099
摘要： In a semiconductor device such as a high-frequency power amplifier module, a plurality of amplifying means are formed on a semiconductor chip which is mounted on a main surface of a wiring substrate, and electrodes of the semiconductor chip are electrically connected by wires to electrodes of the wiring substrate. In order to make the high-frequency power amplifier module small in size, a substrate-side bonding electrode electrically connected to a wire set at a fixed reference electric potential is place at a location farther from a side of the semiconductor chip than a substrate-side output electrode electrically connected to an output wire. A substrate-side input electrode electrically connected to an input wire is located at a distance from the side of the semiconductor chip about equal to the distance from the side of the semiconductor chip to the substrate-side output electrode, or at a location farther from the side of the semiconductor chip than the substrate-side bonding electrode is.

28. 发明授权

US07336132B2 High-frequency power amplifier circuit and electronic part for communication 有权
标题翻译：高频功放电路和电子部件进行通讯
公开(公告)号：US07336132B2
公开(公告)日：2008-02-26
申请号：US11504600
申请日：2006-08-16
申请人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
发明人： Takayuki Tsutsui , Masahiro Tsuchiya , Tetsuaki Adachi
IPC分类号： H03G3/10
CPC分类号： H03G3/3042 , H03F1/0205 , H03F1/0272 , H03F3/193 , H03F2200/372 , H03F2200/393 , H03G3/3047 , H04B1/0475 , H04B1/406 , H04B2001/0416
摘要： A wireless communication system has a first operation mode (GSM mode) for amplifying a phase-modulated high frequency signal with a high frequency power amplifier circuit and a second operation mode (EDGE mode) for amplifying a phase and amplitude-modulated high frequency signal with the amplifier circuit. The amplifier circuit has an input of a high frequency signal, with the amplitude and frequency being fixed in both the first and second operation modes, and operates by being controlled for the bias state of each amplifying stage in accordance with the output control signal produced by a control circuit based on the demanded output level (Vapc) and the detected output level (VSNS) so that the amplifier circuit performs signal amplification to meet the demanded output level.
摘要翻译：无线通信系统具有用于利用高频功率放大器电路放大相位调制的高频信号的第一操作模式（GSM模式）和用于放大相位和幅度调制的高频信号的第二操作模式（EDGE模式）放大电路。放大器电路具有高频信号的输入，振幅和频率在第一和第二操作模式中都是固定的，并且通过根据由放大级产生的输出控制信号被控制为每个放大级的偏置状态来操作基于所需输出电平（Vapc）和检测输出电平（VSNS）的控制电路，使得放大器电路执行信号放大以满足所要求的输出电平。

29. 发明申请

US20070026824A1 Electronic component for amplifying high frequency and radio communication system 审中-公开
标题翻译：用于放大高频无线电通信系统的电子元件
公开(公告)号：US20070026824A1
公开(公告)日：2007-02-01
申请号：US11543143
申请日：2006-10-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H04B1/04 , H04B1/16
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/13091 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：一种高频功率模块，作为无线电通信系统的组件，能够在诸如GSM和DCS的两个频带中执行通信，并且具有用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路。还提供用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号的第二晶体管，用于通过与晶体管的电流成比例的电流的第二电流镜电路。从第一和第二电流镜电路传输的电流转换为电压由GSM和DCS共享。

30. 发明授权

US07139538B2 Electronic component for amplifying high frequency power and radio communication system 失效
标题翻译：用于放大高频电源和无线电通信系统的电子元件
公开(公告)号：US07139538B2
公开(公告)日：2006-11-21
申请号：US10520706
申请日：2002-09-05
申请人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
发明人： Seikou Ono , Hitoshi Akamine , Tetsuaki Adachi
IPC分类号： H04B1/04 , H03C1/62 , H01Q11/12
CPC分类号： H04B1/005 , H01L2224/32225 , H01L2224/48227 , H01L2224/73265 , H01L2924/19105 , H03F3/24 , H03F2200/429 , H03F2203/7236 , H03G3/3047 , H04B1/0483 , H04B1/406 , H04B2001/0408 , H01L2924/00
摘要： A high-frequency power module as a component of a radio communication system capable of performing communications in two frequency bands such as GSM and DCS and has a first transistor for output detection for receiving a signal which is the same as an input signal of a first power amplification transistor for amplifying a high frequency signal on the GSM side and a first current mirror circuit for passing current proportional to current of the transistor. A second transistor for output detection for receiving an input signal of a second power amplification transistor for amplifying a high frequency signal on the DCS side is also provided as is a second current mirror circuit for passing current proportional to current of the transistor. Conversion of current transferred from the first and second current mirror circuits to voltage is shared by the GSM and DCS.
摘要翻译：一种高频功率模块，作为无线电通信系统的组件，能够在诸如GSM和DCS的两个频带中执行通信，并且具有用于输出检测的第一晶体管，用于接收与第一个信号的输入信号相同的信号用于放大GSM侧的高频信号的功率放大晶体管和用于通过与晶体管的电流成比例的电流的第一电流镜电路。还提供用于接收用于放大DCS侧的高频信号的第二功率放大晶体管的输入信号的第二晶体管，用于通过与晶体管的电流成比例的电流的第二电流镜电路。从第一和第二电流镜电路传输的电流转换为电压由GSM和DCS共享。

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