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21. 发明申请

US20090305166A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US20090305166A1
公开(公告)日：2009-12-10
申请号：US12481919
申请日：2009-06-10
申请人： Eishi SHIOBARA , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
发明人： Eishi SHIOBARA , Keisuke Kikutani , Kazuyuki Yahiro , Kentaro Matsunaga , Tomoya Oori
IPC分类号： G03F7/20
CPC分类号： G03F7/095 , G03F7/091 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L21/32139
摘要： A method of manufacturing a semiconductor device according to one embodiment, includes: forming a first mask material film on a workpiece film formed on a semiconductor substrate; forming a resist pattern on the first mask material film; forming a second mask material film having a desired film thickness on the first mask material film so as to cover the resist pattern; carrying out etchback of the second mask material film so as to expose the resist pattern and the first mask material film; processing the resist pattern and the first mask material film simultaneously which are exposed, while leaving the second mask material film of which etchback is carried out; and processing the workpiece film which exposes under the first mask material film.
摘要翻译：根据一个实施例的制造半导体器件的方法包括：在形成在半导体衬底上的工件膜上形成第一掩模材料膜; 在第一掩模材料膜上形成抗蚀剂图案; 在所述第一掩模材料膜上形成具有所需膜厚度的第二掩模材料膜以覆盖所述抗蚀剂图案; 对所述第二掩模材料膜进行回蚀以暴露所述抗蚀剂图案和所述第一掩模材料膜; 同时处理曝光的抗蚀剂图案和第一掩模材料膜，同时留下进行回蚀的第二掩模材料膜; 并处理在第一掩模材料膜下露出的工件膜。

22. 发明申请

US20100304568A1 PATTERN FORMING METHOD 审中-公开
标题翻译：图案形成方法
公开(公告)号：US20100304568A1
公开(公告)日：2010-12-02
申请号：US12752684
申请日：2010-04-01
申请人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
发明人： Seiro MIYOSHI , Yasunobu Kai , Kentaro Matsunaga , Keisuke Kikutani , Eishi Shiobara , Shinya Takahashi
IPC分类号： H01L21/302 , G03F7/20
CPC分类号： G03F1/34 , G03F7/095 , H01L21/0274 , H01L21/31144
摘要： A pattern forming method includes forming a first photoresist on an underlying region, forming a second photoresist on the first photoresist, the second photoresist having an exposure sensitivity which is different from an exposure sensitivity of the first photoresist, radiating exposure light on the first and second photoresists via a photomask including a first transmissive region and a second transmissive region which cause a phase difference of 180° between transmissive light components passing therethrough, the first transmissive region and the second transmissive region being provided in a manner to neighbor in an irradiation region, and developing the first and second photoresists which have been irradiated with the exposure light, thereby forming a structure includes a first region where the underlying region is exposed, a second region where the first photoresist is exposed and a third region where the first photoresist and the second photoresist are left.
摘要翻译：图案形成方法包括在下面的区域上形成第一光致抗蚀剂，在第一光致抗蚀剂上形成第二光致抗蚀剂，第二光致抗蚀剂具有不同于第一光致抗蚀剂的曝光灵敏度的曝光灵敏度，通过包括第一透射区域和第二透射区域的光掩模进行光刻，所述第一透射区域和第二透射区域在穿过其中的透射光分量之间产生180°的相位差，第一透射区域和第二透射区域以照射区域相邻的方式设置，以及显影已经用曝光光照射的第一和第二光致抗蚀剂，由此形成结构，其包括下部区域被暴露的第一区域，第一光致抗蚀剂被曝光的第二区域和第一光致抗蚀剂剩下第二光致抗蚀剂。

23. 发明申请

US20090068523A1 FUEL ELECTRODES FOR SOLID OXIDE ELECTROCHEMICAL CELL, PROCESSES FOR PRODUCING THE SAME, AND SOLID OXIDE ELECTROCHEMICAL CELLS 审中-公开
标题翻译：用于固体氧化物电化学细胞的燃料电极，其制备方法和固体氧化物电化学电池
公开(公告)号：US20090068523A1
公开(公告)日：2009-03-12
申请号：US12204982
申请日：2008-09-05
申请人： Takayuki Fukasawa , Keizo Shimamura , Yoshio Hanakata , Masato Yoshino , Kentaro Matsunaga , Tsuneji Kameda , Yoshiyasu Itoh
发明人： Takayuki Fukasawa , Keizo Shimamura , Yoshio Hanakata , Masato Yoshino , Kentaro Matsunaga , Tsuneji Kameda , Yoshiyasu Itoh
IPC分类号： H01M8/10 , H01M4/02 , B05D3/02
CPC分类号： H01M4/9041 , H01M4/8621 , H01M4/881 , H01M4/8885 , H01M4/9025 , H01M4/9075 , H01M8/0202 , H01M8/0232 , H01M8/0245 , H01M8/1004 , H01M8/1016 , H01M8/1226 , H01M2008/1293 , Y02E60/521 , Y02E60/525 , Y02P70/56
摘要： A fuel electrode for a solid oxide electrochemical cell includes: an electrode layer 12 constituted of a mixed phase including an oxide having mixed conductivity and another oxide selected from the group including an aluminum-based oxide and a magnesium-based composite oxide, said another oxide having, supported on a surface part thereof, particles of at least one member selected from nickel, cobalt, and nickel-cobalt alloys; a meshy wiring 21 formed on a surface layer part of the electrode layer and made of a material having higher electronic conductivity than the electrode layer; and a current collector 14 which overlies the electrode layer and is in contact with at least the wiring.
摘要翻译：用于固体氧化物电化学电池的燃料电极包括：由包含具有混合导电性的氧化物和选自铝基氧化物和镁基复合氧化物的另一氧化物的混合相构成的电极层12，所述另一种氧化物在其表面部分上具有选自镍，钴和镍 - 钴合金中的至少一种的颗粒; 形成在电极层的表层部分上并由比电极层高的电子导电性的材料制成的网状布线21; 以及集电体14，其覆盖在电极层上并与至少布线接触。

24. 发明授权

US08158332B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08158332B2
公开(公告)日：2012-04-17
申请号：US12689830
申请日：2010-01-19
申请人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
发明人： Kentaro Matsunaga , Tomoya Oori , Eishi Shiobara
IPC分类号： G03C5/00
CPC分类号： G03F7/0035 , G03F7/40 , H01L21/0273 , H01L21/0337 , H01L21/0338 , H01L21/31144 , H01L27/11517 , H01L27/11521
摘要： A method of fabricating a semiconductor device according to an embodiment includes: forming a first resist pattern made of a first resist material on a workpiece material; irradiating an energy beam onto the first resist pattern, the energy beam exposing the first resist material to light; performing a treatment for improving resistance the first resist pattern after irradiation of the energy beam; forming a coating film on the workpiece material so as to cover the first resist pattern; and forming a second resist pattern made of a second resist material on the coating film after the treatment.
摘要翻译：根据实施例的制造半导体器件的方法包括：在工件材料上形成由第一抗蚀剂材料制成的第一抗蚀剂图案; 将能量束照射到所述第一抗蚀剂图案上，所述能量束将所述第一抗蚀剂材料暴露于光; 进行能量束照射后的第一抗蚀剂图案的改善电阻的处理; 在所述工件材料上形成涂覆膜以覆盖所述第一抗蚀剂图案; 以及在处理后在涂膜上形成由第二抗蚀剂材料制成的第二抗蚀剂图案。

25. 发明授权

US09362576B2 Electrical power storage system using hydrogen and method for storing electrical power using hydrogen 有权
公开(公告)号：US09362576B2
公开(公告)日：2016-06-07
申请号：US13692432
申请日：2012-12-03
申请人： Shoko Suyama , Yoshiyasu Ito , Shigeo Kasai , Yasuo Takagi , Tsuneji Kameda , Kentaro Matsunaga , Masato Yoshino , Daisuke Horikawa , Kazuya Yamada
发明人： Shoko Suyama , Yoshiyasu Ito , Shigeo Kasai , Yasuo Takagi , Tsuneji Kameda , Kentaro Matsunaga , Masato Yoshino , Daisuke Horikawa , Kazuya Yamada
IPC分类号： C03B29/00 , C04B37/00 , H01M8/04 , B32B18/00 , C04B35/573 , C04B38/00 , C09J163/00 , H01M8/06 , H01M8/18 , C04B111/00
CPC分类号： H01M8/04052 , B32B18/00 , C04B35/573 , C04B37/005 , C04B38/0022 , C04B2111/00853 , C04B2235/3826 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/96 , C04B2237/083 , C04B2237/086 , C04B2237/363 , C04B2237/365 , C04B2237/368 , C04B2237/708 , C09J163/00 , H01M8/04059 , H01M8/0656 , H01M8/186 , Y02E60/366 , Y02E60/528 , Y10T428/31515 , C04B38/0054 , C04B38/0074
摘要： In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit.

26. 发明申请

US20120208100A1 ELECTRICAL POWER STORAGE SYSTEM USING HYDROGEN AND METHOD FOR STORING ELECTRICAL POWER USING HYDROGEN 有权
标题翻译：使用氢的电力存储系统和使用氢存储电力的方法
公开(公告)号：US20120208100A1
公开(公告)日：2012-08-16
申请号：US13208031
申请日：2011-08-11
申请人： Shoko SUYAMA , Yoshiyasu Ito , Shigeo Kasai , Yasuo Takagi , Tsuneji Kameda , Kentaro Matsunaga , Masato Yoshino , Daisuke Horikawa , Kazuya Yamada
发明人： Shoko SUYAMA , Yoshiyasu Ito , Shigeo Kasai , Yasuo Takagi , Tsuneji Kameda , Kentaro Matsunaga , Masato Yoshino , Daisuke Horikawa , Kazuya Yamada
IPC分类号： H01M8/06 , C01B31/36 , C08K3/34 , B32B18/00 , C08L71/00 , C08L63/00
CPC分类号： H01M8/04052 , B32B18/00 , C04B35/573 , C04B37/005 , C04B38/0022 , C04B2111/00853 , C04B2235/3826 , C04B2235/5436 , C04B2235/5445 , C04B2235/77 , C04B2235/785 , C04B2235/786 , C04B2235/96 , C04B2237/083 , C04B2237/086 , C04B2237/363 , C04B2237/365 , C04B2237/368 , C04B2237/708 , C09J163/00 , H01M8/04059 , H01M8/0656 , H01M8/186 , Y02E60/366 , Y02E60/528 , Y10T428/31515 , C04B38/0054 , C04B38/0074
摘要： In one embodiment, an electrical power storage system using hydrogen includes a power generation unit generating power using hydrogen and oxidant gas and an electrolysis unit electrolyzing steam. The electrical power storage system includes a hydrogen storage unit storing hydrogen generated by the electrolysis and supplying the hydrogen to the power generation unit during power generation, a high-temperature heat storage unit storing high temperature heat generated accompanying the power generation and supplying the heat to the electrolysis unit during the electrolysis, and a low-temperature heat storage unit storing low-temperature heat, which is exchanged in the high-temperature heat storage unit and generating with this heat the steam supplied to the electrolysis unit.
摘要翻译：在一个实施例中，使用氢的电力存储系统包括使用氢气和氧化剂气体产生电力的发电单元和电解蒸汽的电解单元。电力储存系统包括：氢存储单元，其存储通过电解生成的氢并在发电期间向发电单元供应氢;高温蓄热单元，其存储伴随发电产生的高温热并将热量供给到在电解中的电解单元以及存储低温热的低温蓄热单元，其在高温蓄热单元中交换，并且通过该热量产生供给到电解单元的蒸汽。

27. 发明授权

US08138059B2 Semiconductor device manufacturing method 失效
标题翻译：半导体器件制造方法
公开(公告)号：US08138059B2
公开(公告)日：2012-03-20
申请号：US12564440
申请日：2009-09-22
申请人： Kentaro Matsunaga , Hirokazu Kato , Tomoya Oori
发明人： Kentaro Matsunaga , Hirokazu Kato , Tomoya Oori
IPC分类号： H01L21/76
CPC分类号： H01L21/0273 , G03F7/40 , H01L21/0337 , H01L21/0338 , H01L21/31144
摘要： A semiconductor device manufacturing method includes: forming a core pattern on a foundation film, the core pattern containing a material generating acid by light exposure; selectively exposing part of the core pattern except an longitudinal end portion; supplying a mask material onto the foundation film so as to cover the core pattern, the mask material being crosslinkable upon supply acid from the core pattern; etching back the mask material to expose an upper surface of the core pattern and remove a portion of the mask material formed on the end portion of the core pattern, thereby leaving a mask material side wall portion formed on a side wall of the core pattern; and removing the core pattern and processing the foundation film by using the mask material sidewall portion left on the foundation film as a mask.
摘要翻译：半导体器件制造方法包括：在基底膜上形成芯图案，所述芯图案含有通过曝光产生酸的材料; 选择性地暴露除了纵向端部之外的芯图案的一部分; 将掩模材料供应到所述基底膜上以覆盖所述芯图案，所述掩模材料在从所述芯图案供给酸时可交联; 蚀刻掩模材料以露出芯图案的上表面并且去除形成在芯图案的端部上的掩模材料的一部分，从而留下形成在芯图案的侧壁上的掩模材料侧壁部分; 并且通过使用留在基底膜上的掩模材料侧壁部分作为掩模去除芯图案和处理基底膜。

28. 发明申请

US20070163443A1 System and method for recovering carbon dioxide in exhaust gas 审中-公开
标题翻译：废气中回收二氧化碳的系统和方法
公开(公告)号：US20070163443A1
公开(公告)日：2007-07-19
申请号：US10587861
申请日：2005-01-28
申请人： Hideshige Moriyama , Kentaro Matsunaga , Katsuya Yamashita
发明人： Hideshige Moriyama , Kentaro Matsunaga , Katsuya Yamashita
IPC分类号： B01D53/62 , B01D53/14 , C01B17/16
CPC分类号： B01D53/62 , C01B32/50 , Y02C10/04 , Y02C10/06 , Y02P20/152
摘要： An alkaline solution ref lux path which refluxes an alkaline solution being discharged from an alkaline solution discharge port 101 of an absorber 100 to an alkaline solution introduction port 102 to absorb carbon dioxide and the like, and an alkaline solution reflux path which refluxes a regenerated alkaline solution being discharged from a regenerated alkaline solution discharge port 111 of a regenerator 110 to an alkaline solution jet port 112 and discharges the carbon dioxide to regenerate an alkaline solution are disposed separately and independently. Thus, the flow rates and the like of the alkaline solutions flowing through the individual alkaline solution reflux paths can be set individually.
摘要翻译：将从吸收体100的碱性溶液排出口101排出的碱性溶液回流到碱性溶液导入口102以吸收二氧化碳等的碱性溶液回流路径和回流碱性溶液回流路径从再生器110的再生碱性溶液排出口111排出到碱性溶液喷射口112并排出二氧化碳以再生碱性溶液的溶液分别独立地设置。因此，可以单独设定流过各个碱性溶液回流路径的碱性溶液的流量等。

29. 发明申请

US20060185516A1 System and method for collecting carbon dioxide in exhaust gas 审中-公开
标题翻译：废气中二氧化碳收集系统及方法
公开(公告)号：US20060185516A1
公开(公告)日：2006-08-24
申请号：US10560979
申请日：2004-06-18
申请人： Hideshige Moriyama , Kentaro Matsunaga , Masafumi Fukuda
发明人： Hideshige Moriyama , Kentaro Matsunaga , Masafumi Fukuda
IPC分类号： B01D53/14
CPC分类号： B01D53/62 , Y02C10/04 , Y02C10/06
摘要： A system and a method for recovery of carbon dioxide in exhaust gas, wherein a liquid absorbent (116) jetted from a liquid absorbent jetting part (101) comes into gas-liquid contact with exhaust gas (114) flowing through a packing (102) from the lower side to the upper side to absorb the carbon dioxide contained in the exhaust gas (114). The flow of the liquid absorbent (116) in a deposition vessel (11) conditioned to a specified pH value is stopped to deposit insoluble compounds as the reaction product of the liquid absorbent (116) against the carbon dioxide, and the carbon dioxide is collected as the insoluble compounds. Thus, the carbon dioxide can be removed from the liquid absorbent which absorbed the carbon dioxide without using steam from a power generating boiler.
摘要翻译：一种用于回收废气中二氧化碳的系统和方法，其中从液体吸收剂喷射部分（101）喷射的液体吸收剂（116）与流过填料（102）的废气（114）气液接触，从下侧到上侧吸收废气（114）中所含的二氧化碳。停止调节至特定pH值的沉积容器（11）中的液体吸收剂（116）的流动，以将液体吸收剂（116）与二氧化碳的反应产物沉积在不溶性化合物中，并收集二氧化碳作为不溶性化合物。因此，可以从吸收二氧化碳的液体吸收剂中除去二氧化碳，而不使用来自发电锅炉的蒸汽。

30. 发明授权

US6045981A Method of manufacturing semiconductor device 失效
标题翻译：制造半导体器件的方法
公开(公告)号：US6045981A
公开(公告)日：2000-04-04
申请号：US19925
申请日：1998-02-06
申请人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
发明人： Kentaro Matsunaga , Akiko Mimotogi , Shoji Mimotogi , Soichi Inoue
IPC分类号： G03F7/26 , G03F7/38 , H01L21/027 , G03F7/00
CPC分类号： G03F7/265 , G03F7/38
摘要： A method of manufacturing a semiconductor device, which comprises the steps of, selectively silylating a photosensitive resin film by exposing the photosensitive resin film according to an exposure pattern thereby to form a silylated portion having a glass transition temperature which is lower than that of the photosensitive resin film and at the same time exposing the photosensitive resin film to an intermediate temperature between the glass transition temperature of the silylated portion and the glass transition temperature of the photosensitive resin film thereby fluidizing the silylated portion so as to cover a portion of the photosensitive resin film neighboring the silylated portion with the fluidized silylated portion, and developing the photosensitive resin film by making use of the silylated portion and the portion of photosensitive resin film covered by the fluidized silylated portion as a mask.
摘要翻译：一种制造半导体器件的方法，其包括以下步骤：通过根据曝光图案曝光感光性树脂膜来选择性地使感光性树脂膜甲硅烷化，从而形成玻璃化转变温度低于光敏树脂膜的甲硅烷基化部分同时使感光性树脂膜暴露于甲硅烷基化部分的玻璃化转变温度与感光性树脂膜的玻璃化转变温度之间的中间温度，由此使甲硅烷基化部分流化，从而覆盖一部分感光性树脂膜与甲硅烷基化部分相邻，并且通过使用甲硅烷基化部分和被流化的甲硅烷基化部分覆盖的部分感光树脂膜作为掩模来显影感光树脂膜。

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