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21. 发明授权

US08810035B2 Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body 有权
标题翻译：半导体结合体和半导体结合体的制造方法
公开(公告)号：US08810035B2
公开(公告)日：2014-08-19
申请号：US13823463
申请日：2011-10-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
IPC分类号： H01L23/00 , B23K35/26 , H01L21/56 , B23K35/30 , C22C5/02 , C22C13/00 , C22C5/06 , B23K35/02 , B23K1/00 , C22C9/00 , C22C1/04
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译：一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层，类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。

22. 发明授权

US08338966B2 Joint structure, joining material, and method for producing joining material containing bismuth 有权
标题翻译：接合结构，接合材料和用于生产含有铋的接合材料的方法
公开(公告)号：US08338966B2
公开(公告)日：2012-12-25
申请号：US13003024
申请日：2010-06-17
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/48
CPC分类号： C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要翻译：本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。

23. 发明申请

US20120153461A1 SEMICONDUCTOR COMPONENT, SEMICONDUCTOR WAFER COMPONENT, MANUFACTURING METHOD OF SEMICONDUCTOR COMPONENT, AND MANUFACTURING METHOD OF JOINING STRUCTURE 审中-公开
标题翻译：半导体元件，半导体元器件，半导体元器件的制造方法及接合结构的制造方法
公开(公告)号：US20120153461A1
公开(公告)日：2012-06-21
申请号：US13263900
申请日：2010-07-20
申请人： Hidetoshi Kitaura , Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
发明人： Hidetoshi Kitaura , Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L24/29 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/27462 , H01L2224/27472 , H01L2224/2901 , H01L2224/29019 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29187 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83005 , H01L2224/83191 , H01L2224/83385 , H01L2224/838 , H01L2224/94 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10335 , H01L2924/10375 , H01L2924/10376 , H01L2924/1305 , H01L2924/13055 , H01L2924/157 , H01L2924/181 , H01L2924/3512 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/00012 , H01L2924/00 , H01L2224/27 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor component of the present invention includes a semiconductor element and a joining layer formed on one surface of the semiconductor element and consisting of a joining material containing Bi as an essential ingredient, and projecting sections are formed on a surface of the joining layer on a side opposite to a surface in contact with the semiconductor element. By joining the semiconductor component to an electrode arranged so as to face the joining layer, the generation of a void can be suppressed.
摘要翻译：本发明的半导体元件包括半导体元件和形成在半导体元件的一个表面上并由包含Bi作为必要成分的接合材料构成的接合层，并且在接合层的表面上形成突出部分与与半导体元件接触的表面相对。通过将半导体部件接合到与接合层相对配置的电极，可以抑制空隙的产生。

24. 外观设计

USD641030S1 Shaft portion of an apparatus for holding and heating semiconductor wafers or the like 有权
标题翻译：用于保持和加热半导体晶片等的装置的轴部
公开(公告)号：USD641030S1
公开(公告)日：2011-07-05
申请号：US29323530
申请日：2008-08-27
申请人： Taichi Nakamura
设计人： Taichi Nakamura

25. 发明申请

US20110122532A1 WRITE HOLE OF A HEAD SLIDER IN A HARD DISK DRIVE 审中-公开
标题翻译：硬盘驱动器中的滑块的写入孔
公开(公告)号：US20110122532A1
公开(公告)日：2011-05-26
申请号：US13019916
申请日：2011-02-02
申请人： Sanford A. Bolasna , Weidong Huang , Taichi Nakamura , Hidekazu Kohira
发明人： Sanford A. Bolasna , Weidong Huang , Taichi Nakamura , Hidekazu Kohira
IPC分类号： G11B5/60
CPC分类号： G11B5/6005 , G11B5/10 , G11B5/40
摘要： A head slider for supporting a head over a magnetic disk in a hard disk drive, and a method of making the head slider are disclosed. The tail section of the head slider has a deep write hole that may improve the altitude performance of the head slider by minimizing fly height variations at high altitudes (i.e., altitudes above 3000 m) or in low atmospheric pressure environments. The write hole prevents the fly height from changing. Additionally, the write hole limits the amount of lubricant that will flow over the ABS.
摘要翻译：公开了一种用于在硬盘驱动器中的磁盘上支撑磁头的磁头滑块，以及制造磁头滑块的方法。头部滑动器的尾部具有深度写入孔，可以通过最小化在高海拔地区（即3000米以上的高度）或在低气压环境中的飞行高度变化来改善头部滑块的高度性能。写孔防止飞行高度变化。此外，写入孔限制将流过ABS的润滑剂的量。

26. 发明申请

US20110120769A1 SOLDERING MATERIAL AND ELECTRONIC COMPONENT ASSEMBLY 有权
标题翻译：焊接材料和电子元器件组件
公开(公告)号：US20110120769A1
公开(公告)日：2011-05-26
申请号：US12999411
申请日：2010-04-19
申请人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
发明人： Shigeaki Sakatani , Akio Furusawa , Kenichiro Suetsugu , Taichi Nakamura
IPC分类号： H01R4/00 , B23K31/02
CPC分类号： H05K3/3463 , B23K35/262 , B23K2101/36 , B32B15/01 , C22C13/00 , H05K3/3442 , H05K2201/10992 , Y02P70/613
摘要： A lead-free solder material is provided, which shows a high thermal fatigue resistance and is able to effectively reduce occurrence of connection failure that would cause a function of a product to stop.A solder material comprises 1.0-4.0% by weight of Ag, 4.0-6.0% by weight of In, 0.1-1.0% by weight of Bi, 1% by weight or less (excluding 0% by weight) of a sum of one or more elements selected from the group consisting of Cu, Ni, Co, Fe and Sb, and a remainder of Sn. When a copper-containing electrode part (3a) of an electronic component (3) is connected to a copper-containing electrode land (1a) of a substrate (1) by using this solder material, a part (5b) having an excellent stress relaxation property can be formed in the solder-connecting part and a Cu—Sn intermetallic compound (5a) can be rapidly grown from the electrode land (1a) and the electrode part (3a) to form a strong blocking structure. Thus, even in a severe temperature environment, cleavage can be prevented from generating and extending, a high thermal fatigue resistance can be attained, and occurrence of connection failure can be reduced.
摘要翻译：提供了一种无铅焊料，其显示出高耐热疲劳性，并且能够有效地减少导致产品功能停止的连接故障的发生。焊料材料包含1.0-4.0重量％的Ag，4.0-6.0重量％的In，0.1-1.0重量％的Bi，1重量％以下（不包括0重量％）的1个或选自由Cu，Ni，Co，Fe和Sb组成的组中的更多元素，以及Sn的剩余部分。当使用该焊料将电子部件（3）的含铜电极部（3a）与基板（1）的含铜电极焊盘（1a）连接时，具有优异应力的部分（5b）可以在焊料连接部中形成松弛性，并且可以从电极接合区（1a）和电极部（3a）迅速地生长Cu-Sn金属间化合物（5a），形成强阻挡结构。因此，即使在严酷的温度环境下，也可以防止产生和延伸的裂纹，可以获得高耐热疲劳性，并且可以降低连接故障的发生。

27. 发明申请

US20110042817A1 SOLDER JOINT STRUCTURE, AND JOINING METHOD OF THE SAME 审中-公开
标题翻译：焊接接头结构及其接合方法
公开(公告)号：US20110042817A1
公开(公告)日：2011-02-24
申请号：US12935381
申请日：2010-04-27
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/532 , H01L21/60
CPC分类号： H01L23/49513 , B23K1/0016 , B23K35/0233 , B23K35/0238 , B23K35/264 , B23K35/325 , B32B15/01 , C22C12/00 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/2908 , H01L2224/29084 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83801 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01024 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/04953 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00 , H01L2924/00012 , H01L2924/01083 , H01L2924/00015 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A layer (105) of a metal having a crystal lattice different from the crystal lattice of a joining material (106) mainly containing Bi is placed on a surface (102b) of a semiconductor device (102), and a layer (104) of an element having a positive value of heat of formation of a compound with the joining material (106) is placed between the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) and the surface (102b) of the semiconductor device (102), thereby preventing the component of the layer (105) of the metal having the crystal lattice different from the crystal lattice of the joining material (106) from being diffused in the semiconductor device (102).
摘要翻译：将具有与主要包含Bi的接合材料（106）的晶格不同的晶格的金属层（105）放置在半导体器件（102）的表面（102b）上，并且将层（104）具有与接合材料（106）的化合物的形成热的正值的元素被放置在具有与接合材料（106）的晶格不同的晶格的金属的层（105）和表面（102）的（102b），从而防止具有与接合材料（106）的晶格不同的晶格的金属的层（105）的成分在半导体器件（102）中扩散，。

28. 发明申请

US20110017124A1 METHOD AND EQUIPMENT FOR PRODUCING SAPPHIRE SINGLE CRYSTAL 审中-公开
标题翻译：用于生产SAPPHIRE单晶的方法和设备
公开(公告)号：US20110017124A1
公开(公告)日：2011-01-27
申请号：US12837201
申请日：2010-07-15
申请人： Keigo HOSHIKAWA , Chihiro Miyagawa , Taichi Nakamura
发明人： Keigo HOSHIKAWA , Chihiro Miyagawa , Taichi Nakamura
IPC分类号： C30B11/02 , C30B15/14
CPC分类号： C30B29/20 , C30B11/002 , Y10T117/1024
摘要： The method is capable of producing a sapphire single crystal without forming cracks and without using an expensive crucible. The method comprises the steps of: putting a seed crystal and a raw material in a crucible; setting the crucible in a cylindrical heater; heating the crucible; and producing temperature gradient in the cylindrical heater so as to sequentially crystallize a melt. The crucible is composed of a material having a specific linear expansion coefficient which is capable of preventing mutual stress, which is caused by a difference between a linear expansion coefficient of the crucible and that of the sapphire single crystal in a direction perpendicular to a growth axis thereof, from generating in the crucible and the sapphire single crystal, or which is capable of preventing deformation of the crucible without generating a crystal defect caused by the mutual stress in the sapphire single crystal.
摘要翻译：该方法能够生产蓝宝石单晶而不形成裂纹，而不使用昂贵的坩埚。该方法包括以下步骤：将晶种和原料放入坩埚中; 将坩埚放置在圆柱形加热器中; 加热坩埚; 并在圆筒形加热器中产生温度梯度，以使熔体顺序结晶。坩埚由具有特定的线性膨胀系数的材料构成，该材料能够防止由坩埚的线性膨胀系数与蓝宝石单晶垂直于成长轴的方向的线膨胀系数之间的差异引起的相互应力在坩埚和蓝宝石单晶中产生，或者能够防止坩埚变形而不产生由蓝宝石单晶中的相互应力引起的晶体缺陷。

29. 发明申请

US20090173449A1 BONDING STRUCTURE AND SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS 有权
标题翻译：粘结结构和半导体器件制造设备
公开(公告)号：US20090173449A1
公开(公告)日：2009-07-09
申请号：US12349693
申请日：2009-01-07
申请人： Taichi Nakamura , Hiroshi Takebayashi , Tomoyuki Fujii
发明人： Taichi Nakamura , Hiroshi Takebayashi , Tomoyuki Fujii
IPC分类号： B32B37/00
CPC分类号： H01L21/6831 , H01L21/67103 , Y10T279/23
摘要： A bonding structure according to the present invention includes: a ceramic member including a hole; a terminal embedded in the ceramic member and including an exposed surface exposed to a bottom portion of the hole; a brazed bond layer formed in contact with the exposed surface of the terminal; and a connecting member inserted in the hole, and bonded to the terminal via the brazed bond layer. An inner diameter of the hole is larger than an outer diameter of the connecting member. A clearance is formed between the hole and the connecting member when the connecting member is inserted in the hole. A braze pool space is formed in a surface of the hole and has a substantially semicircular shape in a cross-sectional plane. The braze pool space is partially filled with a braze material.
摘要翻译：根据本发明的接合结构包括：陶瓷构件，其包括孔; 嵌入在所述陶瓷构件中并包括暴露于所述孔的底部的暴露表面的端子; 形成为与端子的暴露表面接触的钎焊接合层; 以及插入孔中的连接构件，并通过钎焊接合层与端子接合。孔的内径大于连接构件的外径。当连接构件插入孔中时，在孔和连接构件之间形成间隙。钎焊池空间形成在孔的表面中，并且在横截面中具有大致半圆形形状。钎焊池空间部分填充有钎焊材料。

30. 发明申请

US20050275971A1 Femto slider for small form factor hard disk drive 失效
标题翻译： Femto滑块用于小尺寸硬盘驱动器
公开(公告)号：US20050275971A1
公开(公告)日：2005-12-15
申请号：US10902821
申请日：2004-07-30
申请人： Kenji Kuroki , Taichi Nakamura , Akira Tokizono , Akihiro Sera
发明人： Kenji Kuroki , Taichi Nakamura , Akira Tokizono , Akihiro Sera
IPC分类号： G11B21/21 , G11B5/48 , G11B5/60
CPC分类号： G11B5/4826 , G11B5/4833
摘要： A magnetic disk drive includes a magnetic disk and a femto slider. The magnetic disk has a minimum track linear velocity of 1 to 5 m/s. In one embodiment, the magnetic disk drive includes a negative pressure type femto slider and adopts a load/unload method. A gram load “GL” of a head suspension assembly HSA is set at a value exceeding about 3 mN and smaller than about 15 mN and a pitch static attitude “PSA” (deg) and pitch stiffness “Kp” (Nm/deg) satisfy the expression ((PSA×Kp)/GL)
摘要翻译：磁盘驱动器包括磁盘和毫微微滑块。磁盘具有1至5m / s的最小轨道线速度。在一个实施例中，磁盘驱动器包括负压型毫微微滑块，并采用加载/卸载方法。磁头悬挂组件HSA的克负载“GL”被设定为超过约3mN且小于约15mN的值，并且俯仰静态姿态“PSA”（deg）和俯仰刚度“Kp”（Nm / deg）满足表达式（（PSAxKp）/ GL）<0.25mm。结果，可以防止毫微微滑块假定称为双稳态高度的元稳定飞越高状态。此外，通过将俯仰静止姿态“PSA”设定为大于0度的值，可以防止滑块与称为半稳定阻力的磁盘表面发生元稳定接触的状态。

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