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1. 发明申请

US20110108996A1 JOINT STRUCTURE, JOINING MATERIAL AND METHOD FOR PRODUCING JOINING MATERIAL 有权
标题翻译：接头结构，接合材料和生产接合材料的方法
公开(公告)号：US20110108996A1
公开(公告)日：2011-05-12
申请号：US13003024
申请日：2010-06-17
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L29/40 , C22C12/00 , B05D5/12
CPC分类号： C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要翻译：本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。

2. 发明授权

US09379267B2 Solar cell module 有权
标题翻译：太阳能电池组件
公开(公告)号：US09379267B2
公开(公告)日：2016-06-28
申请号：US13880378
申请日：2012-06-28
申请人： Masaki Yoshida , Hidetoshi Kitaura
发明人： Masaki Yoshida , Hidetoshi Kitaura
IPC分类号： H02S40/36 , H01L31/05
CPC分类号： H01L31/0508 , H01L31/0504 , H01L31/0516 , H02S40/36 , Y02E10/50
摘要： A solar cell module including two or more adjacent solar cells (1a, 1b), a connection member (2) for electrically connecting the solar cells (1a, 1b) to each other, and a solder layer (5) disposed between the solar cells (1) and the connection member (2), wherein first and second opening holes (4a, 4b) are formed at a connection portion of the connection member (2) corresponding to the first and the second solar cells (1a, 1b), the first and the second opening holes (4a, 4b) are configured that solder is deposited into them, and first and second protruding parts (3a, 3b) are formed at a part of the outer periphery of each of the first and second opening holes (4a, 4b) of the connection member (2). By the present invention, it is possible to ensure sufficient thickness of the solder joining layer and to improve reliability for long-term use.
摘要翻译：一种太阳能电池模块，包括两个或多个相邻的太阳能电池（1a，1b），用于将太阳能电池（1a，1b）彼此电连接的连接构件（2）和设置在太阳能电池（1）和连接构件（2），其中，在对应于第一和第二太阳能电池（1a，1b）的连接构件（2）的连接部分处形成有第一和第二开孔（4a，4b）第一和第二开孔（4a，4b）被构造成焊料沉积在其中，并且第一和第二突出部分（3a，3b）形成在每个第一和第二开孔的外周的一部分（4a，4b）。通过本发明，可以确保焊料接合层的足够的厚度并提高长期使用的可靠性。

3. 发明申请

US20140103531A1 BONDED STRUCTURE 审中-公开
标题翻译：粘结结构
公开(公告)号：US20140103531A1
公开(公告)日：2014-04-17
申请号：US14123657
申请日：2012-05-22
申请人： Taichi Nakamura , Hidetoshi Kitaura , Akihiro Yoshizawa
发明人： Taichi Nakamura , Hidetoshi Kitaura , Akihiro Yoshizawa
IPC分类号： H01L23/498
CPC分类号： H01L23/49866 , B23K35/007 , B23K35/0233 , B23K35/264 , B32B15/01 , B32B15/016 , C22C5/06 , C22C5/08 , C22C9/00 , C22C12/00 , C22C13/00 , C22C13/02 , H01L23/3107 , H01L23/49513 , H01L23/49551 , H01L23/49582 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/92 , H01L2224/04026 , H01L2224/05647 , H01L2224/2908 , H01L2224/29082 , H01L2224/29083 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29139 , H01L2224/29144 , H01L2224/29147 , H01L2224/29155 , H01L2224/32245 , H01L2224/32507 , H01L2224/45014 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83075 , H01L2224/83101 , H01L2224/83191 , H01L2224/83203 , H01L2224/83439 , H01L2224/8382 , H01L2224/92247 , H01L2924/00011 , H01L2924/00014 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/10253 , H01L2924/10272 , H01L2924/1033 , H01L2924/15747 , H01L2924/181 , H01L2924/3512 , H01L2924/35121 , H01L2924/00012 , H01L2924/00 , H01L2924/0105 , H01L2924/01047 , H01L2924/01082 , H01L2924/00015 , H01L2924/01083 , H01L2924/013 , H01L2924/01007 , H01L2224/45099 , H01L2224/83205 , H01L2924/206
摘要： A bonded structure 106 includes a semiconductor element 102 bonded to a Cu electrode 103 with a bonding material 104 predominantly composed of Bi, wherein the semiconductor element 102 and the Cu electrode 103 are bonded to each other via a laminated body 209a that progressively increases a Young's modulus from the bonding material 104 to a bonded material (the semiconductor element 102 and the Cu electrode 103), achieving stress relaxation against a thermal stress generated in a temperature cycle during the use of a power semiconductor module.
摘要翻译：键合结构106包括：接合材料104主要由Bi构成的接合于Cu电极103的半导体元件102，其中半导体元件102和Cu电极103通过层叠体209a彼此接合，层叠体209a逐渐增加Young 从接合材料104到接合材料（半导体元件102和Cu电极103）的模量，在功率半导体模块的使用期间，实现在温度循环中产生的热应力的应力松弛。

4. 发明授权

US08691377B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US08691377B2
公开(公告)日：2014-04-08
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

5. 发明申请

US20140041707A1 SOLAR BATTERY CELL, JUNCTION STRUCTURE, AND SOLAR BATTERY CELL FABRICATION METHOD 审中-公开
标题翻译：太阳能电池单元，结构结构和太阳能电池单元制造方法
公开(公告)号：US20140041707A1
公开(公告)日：2014-02-13
申请号：US14113229
申请日：2012-04-26
申请人： Hidetoshi Kitaura , Masaki Yoshida
发明人： Hidetoshi Kitaura , Masaki Yoshida
IPC分类号： H01L31/05 , H01L31/18
CPC分类号： H01L31/0516 , H01L31/022441 , H01L31/0682 , H01L31/18 , Y02E10/547
摘要： Included are: a silicon substrate; a pair of finger electrodes connected to a P-type diffusion layer and an N-type diffusion layer respectively, which are formed in a first surface of the silicon substrate; an inner-part passivation layer that gives insulation between the pair of finger electrodes; a connecting area for connection with an outer part, in a gathering part where finger parts of one of the pair of finger electrodes gather; and a barrier part that is, within that connecting area, formed along tip ends of the finger parts of the other of the pair of finger electrodes, a polarity of the other being different from that of the one of the pair of finger electrodes of the connecting area.
摘要翻译：包括：硅衬底; 一对指状电极，其分别与所述硅基板的第一表面中形成的P型扩散层和N型扩散层相连接; 内部钝化层，其在所述一对指状电极之间产生绝缘; 连接区域，用于与外部部分连接，在一对指状电极中的一个的手指部分的聚集部分聚集; 以及在所述连接区域内沿着所述一对指状电极中的另一个的指状部的前端形成的阻挡部，另一方的极性与所述一对指状电极的一方的极性不同连接区域。

6. 发明授权

US08268718B2 Bonded structure and manufacturing method for bonded structure 有权
标题翻译：粘结结构的粘结结构和制造方法
公开(公告)号：US08268718B2
公开(公告)日：2012-09-18
申请号：US13007693
申请日：2011-01-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L21/44
CPC分类号： H01L24/29 , H01L23/49513 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L24/85 , H01L2224/29 , H01L2224/29101 , H01L2224/2929 , H01L2224/29313 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83101 , H01L2224/83192 , H01L2224/83439 , H01L2224/83444 , H01L2224/83455 , H01L2224/83464 , H01L2224/838 , H01L2224/85 , H01L2924/00013 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01019 , H01L2924/01023 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01327 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/181 , H01L2924/00 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01013 , H01L2924/01025 , H01L2924/01015 , H01L2924/01016 , H01L2924/01034 , H01L2924/3512 , H01L2924/01028 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2924/00012 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A manufacturing method for a bonded structure, in which a semiconductor device is bonded to an electrode by a bonding portion, the method including: first mounting a solder ball, in which a surface of a Bi ball is coated with Ni plating, on the electrode that is heated to a temperature equal to or more than a melting point of Bi; second pressing the solder ball against the heated electrode, cracking the Ni plating, spreading molten Bi on a surface of the heated electrode, and forming a bonding material containing Bi-based intermetallic compound of Bi and Ni; and third mounting the semiconductor device on the bonding material.
摘要翻译：一种接合结构的制造方法，其中半导体器件通过接合部分接合到电极上，所述方法包括：首先将其中Bi球的表面涂覆有Ni镀层的焊球安装在电极上加热到等于或大于Bi的熔点的温度; 第二次将焊球压在加热电极上，破裂Ni镀层，将熔融的Bi扩散到加热电极的表面，并形成含有Bi和Ni的Bi基金属间化合物的接合材料; 并且第三将半导体器件安装在接合材料上。

7. 发明申请

US20120018890A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20120018890A1
公开(公告)日：2012-01-26
申请号：US13259009
申请日：2010-04-22
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Takahiro Matsuo
IPC分类号： H01L23/488
CPC分类号： H01L21/563 , H01L23/3733 , H01L23/3736 , H01L23/49568 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/29 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29213 , H01L2224/29309 , H01L2224/29311 , H01L2224/29318 , H01L2224/29339 , H01L2224/29347 , H01L2224/32245 , H01L2224/48227 , H01L2224/73203 , H01L2224/83101 , H01L2224/83192 , H01L2224/838 , H01L2924/00013 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01019 , H01L2924/01027 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/01049 , H01L2924/0105 , H01L2924/01058 , H01L2924/01068 , H01L2924/01074 , H01L2924/01075 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10253 , H01L2924/1305 , H01L2924/13055 , Y10T428/25 , Y10T428/256 , H01L2924/00 , H01L2924/01083 , H01L2924/00012 , H01L2224/29099 , H01L2224/29199 , H01L2224/29299 , H01L2224/2929 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device of the present invention includes a supporting board, an electrode surface processing layer formed on the supporting board, a semiconductor element, and a solder material containing a first metal composed mainly of bismuth and a second metal having a higher melting point than the first metal and joining the electrode surface processing layer and the semiconductor element, the first metal containing particles of the second metal inside the first metal. The composition ratio of the second metal is higher than the first metal in a region of the solder material corresponding to the center portion of the semiconductor element, and the composition ratio of the second metal is at least 83.8 atomic percent in the region corresponding to the center portion.
摘要翻译：本发明的半导体器件包括支撑板，形成在支撑板上的电极表面处理层，半导体元件和包含主要由铋组成的第一金属和比第二金属高的熔点的第二金属的焊料材料第一金属，并且接合电极表面处理层和半导体元件，第一金属内的第一金属含有第二金属的颗粒。在对应于半导体元件的中心部分的焊料材料的区域中，第二金属的组成比高于第一金属，并且第二金属的组成比在对应于半导体元件的区域中至少为83.8原子％中心部分。

8. 发明授权

US08810035B2 Semiconductor bonding structure body and manufacturing method of semiconductor bonding structure body 有权
标题翻译：半导体结合体和半导体结合体的制造方法
公开(公告)号：US08810035B2
公开(公告)日：2014-08-19
申请号：US13823463
申请日：2011-10-17
申请人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
发明人： Taichi Nakamura , Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Yukihiro Ishimaru
IPC分类号： H01L23/00 , B23K35/26 , H01L21/56 , B23K35/30 , C22C5/02 , C22C13/00 , C22C5/06 , B23K35/02 , B23K1/00 , C22C9/00 , C22C1/04
CPC分类号： H01L24/30 , B22F2999/00 , B23K1/0016 , B23K35/0238 , B23K35/26 , B23K35/262 , B23K35/3006 , B23K35/3013 , B23K35/302 , B23K2101/40 , B32B15/018 , C22C1/0483 , C22C5/02 , C22C5/06 , C22C9/00 , C22C9/02 , C22C13/00 , H01L21/563 , H01L23/4827 , H01L23/562 , H01L24/05 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/04026 , H01L2224/05147 , H01L2224/05639 , H01L2224/05647 , H01L2224/2733 , H01L2224/29 , H01L2224/29111 , H01L2224/29113 , H01L2224/32245 , H01L2224/32503 , H01L2224/32507 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83 , H01L2224/83065 , H01L2224/83439 , H01L2224/83444 , H01L2224/8381 , H01L2224/83815 , H01L2924/00015 , H01L2924/01019 , H01L2924/01029 , H01L2924/01079 , H01L2924/0132 , H01L2924/01322 , H01L2924/01327 , H01L2924/351 , H01L2924/3512 , H01L2924/00014 , B22F1/0003 , H01L2924/0105 , H01L2924/00 , H01L2924/00012 , H01L2924/01047 , H01L2924/01083 , H01L2924/01049 , H01L2924/01028 , H01L2224/45099
摘要： A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.
摘要翻译：一种接合结构体，其中半导体元件和电极通过焊料材料接合，其中允许接合的部分具有形成在电极侧的第一金属间化合物层，形成在第二金属间化合物层上的第二金属间化合物层半导体元件侧和由夹在第一金属间化合物层和第二金属间化合物层的两层之间的含有Sn和棒状金属间化合物部分的相位构成的第三层，类似金属间化合物部分被层间接合到第一金属间化合物层和第二金属间化合物层上。

9. 发明授权

US08338966B2 Joint structure, joining material, and method for producing joining material containing bismuth 有权
标题翻译：接合结构，接合材料和用于生产含有铋的接合材料的方法
公开(公告)号：US08338966B2
公开(公告)日：2012-12-25
申请号：US13003024
申请日：2010-06-17
申请人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
发明人： Akio Furusawa , Shigeaki Sakatani , Hidetoshi Kitaura , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/48
CPC分类号： C22C12/00 , B23K1/0016 , B23K1/20 , B23K35/264 , B23K35/362 , B23K2101/40 , H01L24/27 , H01L24/29 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/83 , H01L2224/291 , H01L2224/29101 , H01L2224/29111 , H01L2224/29113 , H01L2224/29118 , H01L2224/29144 , H01L2224/32245 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83439 , H01L2224/838 , H01L2224/83805 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01012 , H01L2924/01013 , H01L2924/01015 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01046 , H01L2924/01047 , H01L2924/0105 , H01L2924/01061 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/0132 , H01L2924/01322 , H01L2924/0133 , H01L2924/014 , H01L2924/10329 , H01L2924/1305 , H01L2924/13055 , H01L2924/15747 , H01L2924/181 , H01L2924/351 , H01L2924/00 , H01L2924/01014 , H01L2924/00012 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/3512 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： The present invention provides a semiconductor component having a joint structure including a semiconductor device, an electrode disposed opposite the semiconductor device, and a joining material which contains Bi as main component and connects the semiconductor device to the electrode. Since the joining material contains a carbon compound, joint failure due to the difference in linear expansion coefficient between the semiconductor device and the electrode can be reduced compared with conventional materials. The joining material which contains Bi as main component enables provision of a joint structure in which a semiconductor device and an electrode are joined by a joint more reliable than a conventional joint.
摘要翻译：本发明提供一种具有接合结构的半导体部件，该接合结构包括半导体器件，与半导体器件相对设置的电极，以及包含Bi作为主要部件并将半导体器件连接到电极的接合材料。由于接合材料含有碳化合物，与常规材料相比，可以减少由于半导体器件和电极之间的线性膨胀系数的差异引起的接合故障。含有Bi作为主要成分的接合材料能够提供通过比常规接头更可靠的接头将半导体器件和电极接合的接合结构。

10. 发明申请

US20120153461A1 SEMICONDUCTOR COMPONENT, SEMICONDUCTOR WAFER COMPONENT, MANUFACTURING METHOD OF SEMICONDUCTOR COMPONENT, AND MANUFACTURING METHOD OF JOINING STRUCTURE 审中-公开
标题翻译：半导体元件，半导体元器件，半导体元器件的制造方法及接合结构的制造方法
公开(公告)号：US20120153461A1
公开(公告)日：2012-06-21
申请号：US13263900
申请日：2010-07-20
申请人： Hidetoshi Kitaura , Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
发明人： Hidetoshi Kitaura , Akio Furusawa , Shigeaki Sakatani , Taichi Nakamura , Takahiro Matsuo
IPC分类号： H01L23/498 , H01L21/60
CPC分类号： H01L24/29 , H01L24/27 , H01L24/32 , H01L24/48 , H01L24/83 , H01L2224/27462 , H01L2224/27472 , H01L2224/2901 , H01L2224/29019 , H01L2224/29082 , H01L2224/29101 , H01L2224/29109 , H01L2224/29111 , H01L2224/29113 , H01L2224/29187 , H01L2224/32245 , H01L2224/32257 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2224/83005 , H01L2224/83191 , H01L2224/83385 , H01L2224/838 , H01L2224/94 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01015 , H01L2924/01019 , H01L2924/01029 , H01L2924/0103 , H01L2924/01032 , H01L2924/01033 , H01L2924/01047 , H01L2924/0105 , H01L2924/01057 , H01L2924/01074 , H01L2924/01078 , H01L2924/01082 , H01L2924/0132 , H01L2924/0133 , H01L2924/014 , H01L2924/10252 , H01L2924/10253 , H01L2924/10271 , H01L2924/10272 , H01L2924/10329 , H01L2924/1033 , H01L2924/10335 , H01L2924/10375 , H01L2924/10376 , H01L2924/1305 , H01L2924/13055 , H01L2924/157 , H01L2924/181 , H01L2924/3512 , H01L2924/01014 , H01L2924/01007 , H01L2924/01031 , H01L2924/01049 , H01L2924/01016 , H01L2924/01083 , H01L2924/01034 , H01L2924/00012 , H01L2924/00 , H01L2224/27 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor component of the present invention includes a semiconductor element and a joining layer formed on one surface of the semiconductor element and consisting of a joining material containing Bi as an essential ingredient, and projecting sections are formed on a surface of the joining layer on a side opposite to a surface in contact with the semiconductor element. By joining the semiconductor component to an electrode arranged so as to face the joining layer, the generation of a void can be suppressed.
摘要翻译：本发明的半导体元件包括半导体元件和形成在半导体元件的一个表面上并由包含Bi作为必要成分的接合材料构成的接合层，并且在接合层的表面上形成突出部分与与半导体元件接触的表面相对。通过将半导体部件接合到与接合层相对配置的电极，可以抑制空隙的产生。

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