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21. 发明授权

US09020186B2 Method and apparatus for detecting object using volumetric feature vector and 3D haar-like filters 有权
标题翻译：使用体积特征向量和3D海尔状过滤器检测物体的方法和装置
公开(公告)号：US09020186B2
公开(公告)日：2015-04-28
申请号：US13407487
申请日：2012-02-28
申请人： Dai-Jin Kim , Dae-Hwan Kim , Yeon-Ho Kim , Hyun-Jin An
发明人： Dai-Jin Kim , Dae-Hwan Kim , Yeon-Ho Kim , Hyun-Jin An
IPC分类号： G06K9/00
CPC分类号： G06K9/00375 , G06K9/00201
摘要： In a method of detecting a specific object using a multi-dimensional image including the specific object, with respect to each window slide of the image subjected to window sliding by applying a previously generated 3D cube filter, data of an area corresponding to the window sliding is normalized in a previously defined specific form. After the corresponding part of the normalized data is assigned to each cell in the 3D cube filter, a volume of the cell is then calculated, thereby expressing the volumes of the cells as one volumetric feature vector having a volumetric feature. The volumetric feature vector is applied to a classifier so as to decide whether or not the data of the area corresponding to the window slide corresponds to the specific object.
摘要翻译：在使用包含特定对象的多维图像检测特定对象的方法中，对于通过应用先前生成的3D立方体滤波器进行窗口滑动的图像的每个窗口滑动，对应于窗口滑动的区域的数据以先前定义的特定形式进行归一化。在将归一化数据的相应部分分配给3D立方体滤波器中的每个单元之后，然后计算单元的体积，从而将单元的体积表示为具有体积特征的一个体积特征向量。将体积特征向量应用于分类器，以便确定对应于窗口幻灯片的区域的数据是否对应于特定对象。

22. 发明授权

US08786607B2 Apparatus and method of generating personal fonts 有权
标题翻译：产生个人字体的装置和方法
公开(公告)号：US08786607B2
公开(公告)日：2014-07-22
申请号：US12320360
申请日：2009-01-23
申请人： Sung-Jung Cho , Jin-Hyung Kim , Dae-Hwan Kim
发明人： Sung-Jung Cho , Jin-Hyung Kim , Dae-Hwan Kim
IPC分类号： G06T11/00
CPC分类号： G06K9/6255 , G06F17/214 , G06K9/00416 , G06T11/203
摘要： An apparatus and method of generating personal fonts is provided, which can modify a trace of handwriting inputted by a user into an elegant one and generate diverse personal fonts in accordance with user's style of handwriting. The apparatus for generating personal fonts includes a character input unit to receive an input of a character trace from a user, a character recognition unit to recognize a representative character corresponding to an input character from the input character trace, a representative trace generation unit to generate a representative trace expressing a trace of the representative character, and a trace modification unit to modify the trace of the input character by combining a weight value of the generated representative trace with the trace of the input character.
摘要翻译：提供一种生成个人字体的装置和方法，其可以将用户输入的手写痕迹修改为优雅的手写体，并根据用户的手写风格生成各种个人字体。用于产生个人字体的装置包括：字符输入单元，用于从用户接收字符轨迹的输入;字符识别单元，用于从输入字符轨迹识别与输入字符相对应的代表性字符;代表性跟踪生成单元，用于生成表示代表性字符的迹象的代表性迹线，以及跟踪修改单元，通过将所生成的代表性跟踪的权重值与输入字符的迹线组合来修改输入字符的迹线。

23. 发明授权

US08735883B2 Oxide thin film transistor and method of fabricating the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US08735883B2
公开(公告)日：2014-05-27
申请号：US13324751
申请日：2011-12-13
申请人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
发明人： Dae-Hwan Kim , Byung-Kook Choi , Sul Lee , Hoon Yim
IPC分类号： H01L29/10 , H01L29/786 , H01L27/12
CPC分类号： H01L29/7869 , H01L27/1225
摘要： A method for fabricating an oxide thin film transistor includes sequentially forming a gate insulating film, an oxide semiconductor layer, and a first insulating layer; selectively patterning the oxide semiconductor layer and the first insulating layer to form an active layer and an insulating layer pattern on the gate electrode; forming a second insulating layer on the substrate having the active layer and the insulating layer pattern formed thereon; and selectively patterning the insulating layer pattern and the second insulating layer to form first and second etch stoppers on the active layer. The oxide semiconductor layer may be a ternary system or quaternary system oxide semiconductor comprising a combination of AxByCzO (A, B, C=Zn, Cd, Ga, In, Sn, Hf, Zr; x, y, z≧0).
摘要翻译：一种制造氧化物薄膜晶体管的方法，包括顺序地形成栅极绝缘膜，氧化物半导体层和第一绝缘层; 选择性地图案化氧化物半导体层和第一绝缘层以在栅电极上形成有源层和绝缘层图案; 在其上形成有活性层和绝缘层图案的基板上形成第二绝缘层; 以及选择性地图案化所述绝缘层图案和所述第二绝缘层以在所述有源层上形成第一和第二蚀刻阻挡层。氧化物半导体层可以是包含AxByCzO（A，B，C = Zn，Cd，Ga，In，Sn，Hf，Zr; x，y，z≥0）的组合的三元系或四元系氧化物半导体。

24. 发明授权

US08604470B2 Oxide thin film transistor and method of fabricating the same 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US08604470B2
公开(公告)日：2013-12-10
申请号：US13106482
申请日：2011-05-12
申请人： Hoon Yim , Dae-Hwan Kim
发明人： Hoon Yim , Dae-Hwan Kim
IPC分类号： H01L29/786
CPC分类号： H01L29/78693 , H01L27/1225 , H01L29/7869
摘要： An oxide thin film transistor (TFT) and a fabrication method thereof are provided. The method for fabricating an oxide thin film transistor (TFT) comprises: forming a gate electrode on a substrate; forming a gate insulating layer on the substrate with the gate electrode formed thereon; forming an active layer made of oxide semiconductor on the gate insulating layer; forming a contact layer on the substrate with the active layer formed thereon and forming source and drain electrodes, which are electrically connected with source and drain regions of the active layer through the contact layer, on the contact layer; forming a protective layer on the substrate with the source and drain electrodes formed thereon; forming a contact hole by removing the protective layer to expose the drain electrode; and forming a pixel electrode electrically connected with the drain electrode through the contact hole, wherein the contact layer is made of oxide including a different metal or conductivity with that of the source and drain electrodes, to adjust a threshold voltage according to the difference in a work function.
摘要翻译：提供一种氧化物薄膜晶体管（TFT）及其制造方法。制造氧化物薄膜晶体管（TFT）的方法包括：在基板上形成栅电极; 在其上形成有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成由氧化物半导体制成的有源层; 在其上形成有源层的衬底上形成接触层，并形成在接触层上通过接触层与有源层的源极和漏极区域电连接的源极和漏极; 在其上形成有源电极和漏电极的衬底上形成保护层; 通过去除保护层来形成接触孔以露出漏电极; 以及形成通过所述接触孔与所述漏电极电连接的像素电极，其中，所述接触层由与所述源电极和漏电极不同的金属或导电性的氧化物构成，以根据所述漏极电极的差异来调整阈值电压工作功能。

25. 发明授权

US08062936B2 Method of fabricating array substrate 有权
标题翻译：阵列基板的制作方法
公开(公告)号：US08062936B2
公开(公告)日：2011-11-22
申请号：US12654585
申请日：2009-12-23
申请人： Hyun-Sik Seo , Jong-Uk Bae , Dae-Hwan Kim
发明人： Hyun-Sik Seo , Jong-Uk Bae , Dae-Hwan Kim
IPC分类号： H01L21/00
CPC分类号： H01L27/1288 , G02F1/136227 , H01L21/28525 , H01L27/1214 , H01L27/1225 , H01L27/3248 , H01L27/3262 , H01L29/7869
摘要： A method of fabricating an array substrate for a display device includes steps of forming a gate line and a gate electrode on a substrate, forming a gate insulating layer and an intrinsic amorphous silicon layer, forming an oxide semiconductor layer, increasing a conductive property of the oxide semiconductor layer, forming a metal layer, forming a first photoresist pattern and a second photoresist pattern having a thinner thickness than the first photoresist pattern, forming a data line, a source drain pattern, an oxide semiconductor pattern and an active layer, removing the second photoresist pattern and exposing the source drain pattern, wet-etching the source drain pattern using a first etchant, thereby forming source and drain electrodes, wet-etching the oxide semiconductor pattern using a second etchant, thereby forming ohmic contact layers, removing the first photoresist pattern, forming a passivation layer having a drain contact hole exposing the drain electrode on the source and drain electrodes, and forming a pixel electrode connected to the drain electrode through the drain contact hole, wherein the active layer has a uniform thickness in the switching region.
摘要翻译：一种制造用于显示装置的阵列基板的方法包括以下步骤：在基板上形成栅极线和栅电极，形成栅极绝缘层和本征非晶硅层，形成氧化物半导体层，增加导电性能氧化物半导体层，形成金属层，形成厚度比第一光致抗蚀剂图案薄的第一光致抗蚀剂图案和第二光致抗蚀剂图案，形成数据线，源漏图案，氧化物半导体图案和有源层，第二光致抗蚀剂图案并暴露源极漏极图案，使用第一蚀刻剂湿蚀刻源漏极图案，从而形成源极和漏极，使用第二蚀刻剂湿蚀刻氧化物半导体图案，从而形成欧姆接触层，去除第一形成具有漏极接触孔的钝化层，所述漏极接触孔暴露出源极a上的漏电极并且通过漏极接触孔形成连接到漏电极的像素电极，其中有源层在开关区域中具有均匀的厚度。

26. 发明申请

US20100110385A1 MULTIMEDIA PLAYER DISPLAYING 2 PROJECTION IMAGES 有权
标题翻译：多媒体播放器显示2个投影图像
公开(公告)号：US20100110385A1
公开(公告)日：2010-05-06
申请号：US12449647
申请日：2008-02-19
申请人： Byeong-Dae Choi , Dae-Hwan Kim
发明人： Byeong-Dae Choi , Dae-Hwan Kim
IPC分类号： G03B21/14
CPC分类号： G03B21/14 , G03B21/2013 , G03B21/206 , G06F1/1626 , G06F1/1639 , G06F1/1673 , H04N5/7408 , H04N9/31 , H04N9/3102 , H04N9/3111 , H04N9/3147 , H04N9/3155 , H04N9/3167 , H04N9/3173 , H04N9/3182 , H04N9/3194
摘要： A multimedia player for providing two projection images is provided. The multimedia player for displaying two projection images includes: a first projection unit displaying a first projection image; and a second projection unit displaying a second projection image. The first projection unit includes: a first driving unit controlling an operation of the first projection unit and providing an image signal on the first projection image to be displayed; a first light source unit; a first light modulation device outputting the first projection image by modulating light provided from the light source in response to the image signal of the first projection image; and a first projection lens unit magnifying and projecting an image that is output from the first light modulation device. The structure of the first projection unit is the same as that of the second projection unit. The multimedia player further includes a screen sensing unit sensing a color of an area in which an image is to be displayed. The first and second driving units detect a complementary color of a color sensed by the screen sensing unit and increase brightness of a light source corresponding to the complementary color among light sources of the first and second light source units or image data corresponding to the complementary color among image data to be displayed, thereby improving visibility.
摘要翻译：提供了一种用于提供两个投影图像的多媒体播放器。用于显示两个投影图像的多媒体播放器包括：显示第一投影图像的第一投影单元; 以及第二投影单元，显示第二投影图像。第一投影单元包括：第一驱动单元，控制第一投影单元的操作并在要显示的第一投影图像上提供图像信号; 第一光源单元; 第一光调制装置，响应于第一投影图像的图像信号，通过调制从光源提供的光来输出第一投影图像; 以及第一投影透镜单元，其放大并投影从第一光调制装置输出的图像。第一投影单元的结构与第二投影单元的结构相同。多媒体播放器还包括感测要显示图像的区域的颜色的屏幕感测单元。第一和第二驱动单元检测由屏幕感测单元感测的颜色的互补色，并增加对应于第一和第二光源单元的光源中的互补色的光源的亮度或对应于互补色的图像数据在要显示的图像数据中，从而提高可视性。

27. 发明申请

US20100084649A1 OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME 有权
标题翻译：氧化物薄膜晶体管及其制造方法
公开(公告)号：US20100084649A1
公开(公告)日：2010-04-08
申请号：US12548908
申请日：2009-08-27
申请人： Hyun-Sik Seo , Jong-Uk Bae , Dae-Hwan Kim
发明人： Hyun-Sik Seo , Jong-Uk Bae , Dae-Hwan Kim
IPC分类号： H01L29/786 , H01L21/336
CPC分类号： H01L29/7869 , H01L29/45
摘要： An oxide thin film transistor (TFT) and its fabrication method are disclosed. In a TFT of a bottom gate structure using amorphous zinc oxide (ZnO)-based semiconductor as an active layer, source and drain electrodes are formed, on which the active layer made of oxide semiconductor is formed to thus prevent degeneration of the oxide semiconductor in etching the source and drain electrodes. The oxide TFT includes: a gate electrode form on a substrate; a gate insulating layer formed on the gate electrode; source and drain electrodes formed on the gate insulating layer and having a multi-layer structure of two or more layers; and an active layer formed on the source and drain electrodes and formed of amorphous zinc oxide-based semiconductor, wherein a metal layer such as indium-tin-oxide, molybdenum, and the like, having good ohmic-contact characteristics with titanium and a titanium alloy having good bonding force with oxygen or the oxide-based semiconductor is formed at an uppermost portion of the source and drain electrodes. In a method for fabricating an oxide TFT, a silicon nitride film is deposited with a sputter equipment without the necessity of H2 gas so as to be used as a protection layer of oxide semiconductor to thus prevent degradation of the characteristics of the oxide semiconductor.
摘要翻译：公开了一种氧化物薄膜晶体管（TFT）及其制造方法。在使用基于无定形氧化锌（ZnO）的半导体作为有源层的底栅结构的TFT中，形成源极和漏极，形成由氧化物半导体构成的有源层，从而防止氧化物半导体的退化蚀刻源极和漏极。氧化物TFT包括：在基板上的栅电极形式; 形成在所述栅电极上的栅极绝缘层; 源电极和漏极形成在栅极绝缘层上并具有两层或多层的多层结构; 以及形成在源极和漏极上并由无定形氧化锌基半导体形成的有源层，其中与钛和钛具有良好的欧姆接触特性的诸如铟锡氧化物，钼等的金属层在源极和漏极的最上部形成有与氧或氧化物基半导体具有良好结合力的合金。在制造氧化物TFT的方法中，用溅射设备沉积氮化硅膜，而不需要H2气体，以便用作氧化物半导体的保护层，从而防止氧化物半导体的特性劣化。

28. 发明申请

US20100020047A1 Method of driving a plasma display panel and driver therefor 审中-公开
标题翻译：驱动等离子体显示面板及其驱动器的方法
公开(公告)号：US20100020047A1
公开(公告)日：2010-01-28
申请号：US12458928
申请日：2009-07-28
申请人： Kyung-Sub Shim , Hak-Cheol Yang , Dae-Hwan Kim , Seung-Yong Lee
发明人： Kyung-Sub Shim , Hak-Cheol Yang , Dae-Hwan Kim , Seung-Yong Lee
IPC分类号： G06F3/038
CPC分类号： G09G3/293 , G09G2330/021
摘要： A method of driving a plasma display panel having a capacitive load formed by a plurality of scan electrodes and a plurality of address electrodes crossing the scan electrodes, using a driver including an address energy recovery circuit (AERC) that applies an address voltage to the address electrodes by an inductor electrically coupled to the address electrodes and resonance of the capacitive load, wherein, during an address period in which one of a scan signal and a non-scan signal is applied to each of the scan electrodes, the method includes applying the scan signal to a current scan electrode, and applying the scan signal to a subsequent scan electrode adjacent the current scan electrode after application of an address signal is complete, the address signal varying from a base state for a period longer than application of the address voltage.
摘要翻译：一种驱动等离子体显示面板的方法，该等离子体显示面板具有由多个扫描电极形成的电容性负载和与扫描电极交叉的多个地址电极，使用包括地址能量恢复电路（AERC）的驱动器，地址能量恢复电路电极，电感器电耦合到寻址电极和电容性负载的谐振，其中在扫描信号和非扫描信号中的一个施加到每个扫描电极的寻址周期期间，该方法包括：扫描信号到当前扫描电极，并且在施加地址信号之后将扫描信号施加到与当前扫描电极相邻的后续扫描电极，地址信号从基本状态变化长于施加地址电压。

29. 发明申请

US20080022345A1 Demodulator and demodulation method 审中-公开
标题翻译：解调器和解调方法
公开(公告)号：US20080022345A1
公开(公告)日：2008-01-24
申请号：US11476834
申请日：2006-06-29
申请人： Ryan Kim , Dae-Hwan Kim , Jae-Hong Park
发明人： Ryan Kim , Dae-Hwan Kim , Jae-Hong Park
IPC分类号： H04N7/173 , H04N7/16
CPC分类号： H04N21/2383 , H04N7/163 , H04N21/41407 , H04N21/4382 , H04N21/6112
摘要： A demodulator, for example, a digital video broadcasting-handheld (DVB-H) demodulator may include an erasure table for storing erasure information, a multi-protocol encapsulation forward error correction (MPE-FEC) decoder configured to decode MPE-FEC data within an MPE-FEC frame based on the erasure information, and an erasure table controller configured to generate the erasure information based on a cyclic redundancy check (CRC) operation result regarding transport stream (TS) data to store the generated erasure information into the erasure table and output, to the MPE-FEC decoder, the stored erasure information corresponding to the MPE-FEC data when the MPE-FEC decoder decodes the MPE-FEC data. Therefore, the DVB-H demodulator may process the erasure information faster, for example, independently of a main processor, using the erasure table controller and/or the erasure table.
摘要翻译：解调器，例如数字视频广播手持（DVB-H）解调器可以包括用于存储擦除信息的擦除表，多协议封装前向纠错（MPE-FEC）解码器，被配置为解码MPE-FEC数据内的MPE-FEC数据基于擦除信息的MPE-FEC帧，以及擦除表控制器，被配置为基于关于传输流（TS）数据的循环冗余校验（CRC）运算结果生成擦除信息，以将生成的擦除信息存储到擦除表中并且当MPE-FEC解码器解码MPE-FEC数据时，向MPE-FEC解码器输出与MPE-FEC数据相对应的存储的擦除信息。因此，DVB-H解调器可以使用擦除表控制器和/或擦除表，例如独立于主处理器来更快地处理擦除信息。

30. 发明授权

US09147022B2 Method for calculating parameter values of thin-film transistor and apparatus for performing the method 有权
标题翻译：用于计算薄膜晶体管的参数值的方法和用于执行该方法的装置
公开(公告)号：US09147022B2
公开(公告)日：2015-09-29
申请号：US13481579
申请日：2012-05-25
申请人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
发明人： Je-Hun Lee , Byung-Du Ahn , Sei-Yong Park , Jun-Hyun Park , Jae-Woo Park , Dae-Hwan Kim , Sung-Chul Kim , Yong-Woo Jeon
IPC分类号： G06F7/60 , G06F17/10 , G06F17/50
CPC分类号： G06F17/5036
摘要： A method for calculating values of parameters of a TFT includes calculating a set of simulated current-voltage (I-V) values using state-density-functions over an entire energy band in a band gap of an amorphous semiconductor of the TFT. The method further includes comparing the set of simulated I-V values with a set of measured I-V values of the TFT to determine a value of a parameter of the TFT. The method may further include calculating values of an acceptor state-density-function gA using a set of electrostatic capacity-voltage (C-V) values of the TFT measured according to a frequency. The method may further include determining values of a donor state-density-function gD and values of an interface state-density-function Dit over the entire energy band in the band gap.
摘要翻译：用于计算TFT的参数值的方法包括使用TFT的非晶半导体的带隙中的整个能带上的状态密度函数来计算一组模拟电流 - 电压（I-V）值。所述方法还包括将所述一组模拟I-V值与所述TFT的测量I-V值的集合进行比较，以确定所述TFT的参数的值。该方法还可以包括使用根据频率测量的TFT的一组静电电容电压（C-V）值来计算受主状态密度函数gA的值。该方法还可以包括在带隙中的整个能带上确定施主状态密度函数gD的值和接口状态密度函数Dit的值。

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