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21. 发明授权

US08337619B2 Polymeric coating of substrate processing system components for contamination control 有权
标题翻译：用于污染控制的基底处理系统部件的聚合物涂层
公开(公告)号：US08337619B2
公开(公告)日：2012-12-25
申请号：US12234038
申请日：2008-09-19
申请人： David K. Carlson , Roger N. Anderson
发明人： David K. Carlson , Roger N. Anderson
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C30/00 , B05D5/083 , B05D7/14 , B05D2350/65 , C23C2/26 , C23C26/00 , C23C28/00 , Y10T428/239 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/3154
摘要： A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system. The protective coating includes nickel (Ni) and a flouropolymer.
摘要翻译：处理基板处理系统的一部分的金属表面以降低基板的加工表面附近的缺陷浓度的方法包括在金属表面上形成保护涂层，其中保护涂层包括镍（Ni）和含氟聚合物。在金属表面上形成保护涂层还可以包括在金属表面上形成镍层，用含氟聚合物浸渍镍层，以及从表面除去含氟聚合物，留下主要的镍表面，因此含氟聚合物主要是在下表面。基板处理系统包括其中引入反应气体的处理室，用于从处理室中去除材料的泵送系统，具有保护涂层的第一部件，其中所述保护涂层形成暴露于所述部件的表面衬底处理室的内部或泵送系统的内部。保护涂层包括镍（Ni）和氟聚合物。

22. 发明授权

US08309440B2 Method and apparatus for cleaning a substrate surface 有权
标题翻译：清洗基材表面的方法和设备
公开(公告)号：US08309440B2
公开(公告)日：2012-11-13
申请号：US13175446
申请日：2011-07-01
申请人： Errol Antonio C. Sanchez , Johanes Swenberg , David K. Carlson , Roisin L. Doherty
发明人： Errol Antonio C. Sanchez , Johanes Swenberg , David K. Carlson , Roisin L. Doherty
IPC分类号： H01L21/20
CPC分类号： H01L21/67017 , C30B25/08 , C30B29/06 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/67028 , H01L21/67069 , Y10S438/976
摘要： Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.
摘要翻译：本文所述的实施例提供了用于处理衬底的方法。一个实施例包括将衬底定位在处理室的处理区域中，将设置在处理室中的衬底的表面暴露于含氧气体，以在表面上形成第一含氧层，去除第一含氧层以暴露基底表面的至少一部分，并将基底的表面暴露于含氧气体，以在表面上形成第二含氧层。

23. 发明申请

US20120240853A1 LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：化学气相沉积室内衬组件
公开(公告)号：US20120240853A1
公开(公告)日：2012-09-27
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

24. 发明授权

US07645339B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07645339B2
公开(公告)日：2010-01-12
申请号：US11549033
申请日：2006-10-12
申请人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/04
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.
摘要翻译：本发明的实施例涉及在衬底上沉积含硅材料的方法。在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中，以及在所述晶体表面上沉积外延层。在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积跨过结晶表面和特征表面的碳化硅毯层。通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

25. 发明授权

US06500734B2 Gas inlets for wafer processing chamber 失效
标题翻译：晶圆处理室气体入口
公开(公告)号：US06500734B2
公开(公告)日：2002-12-31
申请号：US09325597
申请日：1999-06-02
申请人： Roger N. Anderson , Peter W. Hey , David K. Carlson , Mahalingam Venkatesan , Norma Riley
发明人： Roger N. Anderson , Peter W. Hey , David K. Carlson , Mahalingam Venkatesan , Norma Riley
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/45504 , C23C16/45512 , H01L21/67017 , H01L21/67023
摘要： A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译：一种用于向具有壁的基板处理装置提供处理流体的系统，其内表面限定了处理室，其中基板支撑基座位于该处理室中。该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。入口具有与沿其形成的每个流体管道相对应的单独的流体通道。每个流体通道在壁的内表面处或附近打开以限定流体混合区，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直至到达混合区。

26. 发明授权

US06455814B1 Backside heating chamber for emissivity independent thermal processes 有权
标题翻译：背面加热室用于发射率独立的热处理
公开(公告)号：US06455814B1
公开(公告)日：2002-09-24
申请号：US10007852
申请日：2001-11-07
申请人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
发明人： Arkadii V. Samoilov , Dale R. DuBois , Lance A. Scudder , Paul B. Comita , Lori D. Washington , David K. Carlson , Roger N. Anderson
IPC分类号： F27B514
CPC分类号： H01L21/67115 , C23C16/481 , C30B25/105
摘要： An apparatus that includes a reflector having a mirrored surface facing down, a glass structure located beneath the reflector, a susceptor within the glass structure having a surface facing up that is capable of holding a part to be processed, and one or more radiant heat sources directed at and located beneath the glass structure.
摘要翻译：一种装置，包括具有面向下的镜面的反射器，位于反射器下方的玻璃结构，玻璃结构内的基座具有面向上的表面，其能够保持待加工的部分，以及一个或多个辐射热源指向并位于玻璃结构下方。

27. 发明授权

US06254686B1 Vented lower liner for heating exhaust gas from a single substrate reactor 有权
标题翻译：用于从单个基板反应器加热废气的通风下衬板
公开(公告)号：US06254686B1
公开(公告)日：2001-07-03
申请号：US09650098
申请日：2000-08-25
申请人： Paul B. Comita , David K. Carlson , Norma B. Riley , Doria W. Fan , Rekha Ranganathan
发明人： Paul B. Comita , David K. Carlson , Norma B. Riley , Doria W. Fan , Rekha Ranganathan
IPC分类号： C23C1600
CPC分类号： C23C16/4408 , C23C16/4412 , C23C16/481 , C30B25/14 , C30B31/16
摘要： The present invention is a single wafer reactor having a vented lower liner for heating exhaust gas. The apparatus of the present invention includes a reaction chamber. A wafer support member which divides the chamber into an upper and lower portion is positioned within the chamber. A gas outlet for exhausting gas from the chamber has a vent to exhaust gas from the lower portion of the chamber and an exhaust passage opening to exhaust gas from the upper portion of the chamber. Heated inert purge gas is fed from the lower chamber portion through the vent at a rate so as to prevent the deposition gas from condensing in the exhaust passage.
摘要翻译：本发明是具有用于加热废气的排气下衬板的单晶片反应器。本发明的装置包括反应室。将腔室分成上部和下部的晶片支撑构件定位在腔室内。用于从腔室排出气体的气体出口具有从腔室的下部排出的排气和从腔室的上部排出废气的排气通道。加热的惰性吹扫气体以一定的速度从下室部分通过排气口供给，以防止沉积气体在排气通道中冷凝。

28. 发明授权

US5607724A Low temperature high pressure silicon deposition method 失效
标题翻译：低温高压硅沉积法
公开(公告)号：US5607724A
公开(公告)日：1997-03-04
申请号：US430582
申请日：1995-04-28
申请人： Israel Beinglass , David K. Carlson
发明人： Israel Beinglass , David K. Carlson
IPC分类号： C23C16/24 , H01L21/203 , H01L21/205 , C23C16/00
CPC分类号： C23C16/24
摘要： A method of producing doped and undoped polycrystalline silicon layers on a substrate by chemical vapor deposition at elevated pressures of from about 10 to about 350 Torr whereby deposition occurs at practicable rates. A substrate is loaded in a vacuum chamber, the temperature adjusted to obtain a silicon deposit of predetermined crystallinity, and the silicon precursor gases fed to the chamber to a preselected high pressure. Both undoped and doped silicon can be deposited at high rates up to about 3000 angstroms per minute.
摘要翻译：通过在约10至约350托的升高的压力下通过化学气相沉积在基底上产生掺杂和未掺杂多晶硅层的方法，由此以可行的速率进行沉积。将衬底装载在真空室中，调节温度以获得预定结晶度的硅沉积物，并将硅前驱体气体供给到预定的高压。未掺杂和掺杂的硅都可以以高达每分钟约3000埃的速率沉积。

29. 发明授权

US5258824A In-situ measurement of a thin film deposited on a wafer 失效
标题翻译：沉积在晶片上的薄膜的原位测量
公开(公告)号：US5258824A
公开(公告)日：1993-11-02
申请号：US884036
申请日：1992-05-14
申请人： David K. Carlson , Russell Bowman
发明人： David K. Carlson , Russell Bowman
IPC分类号： G01B15/02 , G01B11/06 , G01J5/00
CPC分类号： G01B15/02 , G01B2210/44
摘要： A method and apparatus is used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline may be measured as it is deposited over silicon oxide on a silicon wafer. The intensity of radiation emission at the top of the silicon wafer is detected. The temperature of the silicon wafer is measured and the variation in the intensity of radiation emission due to variation of the temperature is subtracted from the intensity of radiation emission detected at the top of the silicon wafer. The resultant signal is used to calculate the thickness of the polycrystalline silicon layer.
摘要翻译：使用方法和装置来确定沉积在样品上的层的厚度。例如，可以测量多晶层的厚度，因为其沉积在硅晶片上的氧化硅上。检测硅晶片顶部的辐射发射强度。测量硅晶片的温度，并且从在硅晶片顶部检测的辐射发射强度减去由于温度变化引起的辐射发射强度的变化。所得信号用于计算多晶硅层的厚度。

30. 发明授权

US08986454B2 Window assembly for use in substrate processing systems 有权
标题翻译：用于基板处理系统的窗组件
公开(公告)号：US08986454B2
公开(公告)日：2015-03-24
申请号：US13112109
申请日：2011-05-20
申请人： David K. Carlson
发明人： David K. Carlson
IPC分类号： C23C16/46 , C23C16/52 , H01L21/306 , H01L21/67
CPC分类号： H01L21/67115
摘要： Embodiments of a window assembly are provided herein. In some embodiments, a window assembly for use in a substrate processing system comprising a first window at least partially transparent to light energy; a second window transparent to light energy and substantially parallel to the first window; and a separator disposed proximate the peripheral edges of the first and second windows and defining a sealed gap between the first and second windows, wherein the separator has an inlet and outlet to flow a gas through the sealed gap. In some embodiments, one or more support elements are disposed in the sealed gap to maintain a substantially uniform gap distance between the first and second windows. In some embodiments, a plurality of light adjusting elements are disposed in the gap to adjust one or more properties of light energy that passes through the light adjusting element.
摘要翻译：本文提供了窗组件的实施例。在一些实施例中，一种用于衬底处理系统的窗户组件，其包括对光能至少部分透明的第一窗口; 对光能透明并基本上平行于第一窗的第二窗口; 以及分隔件，其设置在所述第一和第二窗口的周边边缘附近并且限定所述第一和第二窗口之间的密封间隙，其中所述隔板具有使气体流过所述密封间隙的入口和出口。在一些实施例中，一个或多个支撑元件设置在密封间隙中以保持第一和第二窗口之间的基本均匀的间隙距离。在一些实施例中，多个调光元件设置在间隙中以调节通过光调节元件的光能的一个或多个特性。

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