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1. 发明授权

US5258824A In-situ measurement of a thin film deposited on a wafer 失效
标题翻译：沉积在晶片上的薄膜的原位测量
公开(公告)号：US5258824A
公开(公告)日：1993-11-02
申请号：US884036
申请日：1992-05-14
申请人： David K. Carlson , Russell Bowman
发明人： David K. Carlson , Russell Bowman
IPC分类号： G01B15/02 , G01B11/06 , G01J5/00
CPC分类号： G01B15/02 , G01B2210/44
摘要： A method and apparatus is used to determine the thickness of a layer deposited on a specimen. For example, the thickness of a layer of polycrystalline may be measured as it is deposited over silicon oxide on a silicon wafer. The intensity of radiation emission at the top of the silicon wafer is detected. The temperature of the silicon wafer is measured and the variation in the intensity of radiation emission due to variation of the temperature is subtracted from the intensity of radiation emission detected at the top of the silicon wafer. The resultant signal is used to calculate the thickness of the polycrystalline silicon layer.
摘要翻译：使用方法和装置来确定沉积在样品上的层的厚度。例如，可以测量多晶层的厚度，因为其沉积在硅晶片上的氧化硅上。检测硅晶片顶部的辐射发射强度。测量硅晶片的温度，并且从在硅晶片顶部检测的辐射发射强度减去由于温度变化引起的辐射发射强度的变化。所得信号用于计算多晶硅层的厚度。

2. 发明授权

US08343317B2 In situ cleaning of CVD System exhaust 有权
标题翻译： CVD系统排气的原位清洗
公开(公告)号：US08343317B2
公开(公告)日：2013-01-01
申请号：US12244318
申请日：2008-10-02
申请人： David K. Carlson
发明人： David K. Carlson
IPC分类号： B01J19/08
CPC分类号： C23C16/4412
摘要： Embodiments of the invention relate to methods and apparatuses for forming films using CVD. One or more method and apparatus embodiments include preventing the formation of bonds and/or breaking bonds that permit polymers to form in an exhaust line of a CVD apparatus.
摘要翻译：本发明的实施例涉及使用CVD形成膜的方法和装置。一种或多种方法和装置实施方案包括防止在CVD装置的排气管线中形成允许聚合物形成的键和/或断裂键。

3. 发明授权

US08337619B2 Polymeric coating of substrate processing system components for contamination control 有权
标题翻译：用于污染控制的基底处理系统部件的聚合物涂层
公开(公告)号：US08337619B2
公开(公告)日：2012-12-25
申请号：US12234038
申请日：2008-09-19
申请人： David K. Carlson , Roger N. Anderson
发明人： David K. Carlson , Roger N. Anderson
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C30/00 , B05D5/083 , B05D7/14 , B05D2350/65 , C23C2/26 , C23C26/00 , C23C28/00 , Y10T428/239 , Y10T428/263 , Y10T428/264 , Y10T428/265 , Y10T428/3154
摘要： A method of treating a metal surface of a portion of a substrate processing system to lower a defect concentration near a processed surface of a substrate includes forming a protective coating on the metal surface, wherein the protective coating includes nickel (Ni) and a fluoropolymer. Forming the protective coating on the metal surface can further include forming a nickel layer on the metal surface, impregnating the nickel layer with a fluoropolymer, and removing fluoropolymer from the surface leaving a predominantly nickel surface so the fluoropolymer is predominantly subsurface. A substrate processing system includes a process chamber into which a reactant gas is introduced, a pumping system for removing material from the process chamber, a first component with a protective coating, wherein the protective coating forms a surface of the component which is exposed to an interior of the substrate processing chamber or an interior of the pumping system. The protective coating includes nickel (Ni) and a flouropolymer.
摘要翻译：处理基板处理系统的一部分的金属表面以降低基板的加工表面附近的缺陷浓度的方法包括在金属表面上形成保护涂层，其中保护涂层包括镍（Ni）和含氟聚合物。在金属表面上形成保护涂层还可以包括在金属表面上形成镍层，用含氟聚合物浸渍镍层，以及从表面除去含氟聚合物，留下主要的镍表面，因此含氟聚合物主要是在下表面。基板处理系统包括其中引入反应气体的处理室，用于从处理室中去除材料的泵送系统，具有保护涂层的第一部件，其中所述保护涂层形成暴露于所述部件的表面衬底处理室的内部或泵送系统的内部。保护涂层包括镍（Ni）和氟聚合物。

4. 发明授权

US08309440B2 Method and apparatus for cleaning a substrate surface 有权
标题翻译：清洗基材表面的方法和设备
公开(公告)号：US08309440B2
公开(公告)日：2012-11-13
申请号：US13175446
申请日：2011-07-01
申请人： Errol Antonio C. Sanchez , Johanes Swenberg , David K. Carlson , Roisin L. Doherty
发明人： Errol Antonio C. Sanchez , Johanes Swenberg , David K. Carlson , Roisin L. Doherty
IPC分类号： H01L21/20
CPC分类号： H01L21/67017 , C30B25/08 , C30B29/06 , H01L21/02046 , H01L21/02238 , H01L21/02255 , H01L21/02532 , H01L21/0262 , H01L21/02661 , H01L21/31662 , H01L21/67028 , H01L21/67069 , Y10S438/976
摘要： Embodiments described herein provide methods for processing a substrate. One embodiment comprises positioning a substrate in a processing region of a processing chamber, exposing a surface of the substrate disposed in the processing chamber to an oxygen containing gas to form a first oxygen containing layer on the surface, removing at least a portion of the first oxygen containing layer to expose at least a portion of the surface of the substrate, and exposing the surface of the substrate to an oxygen containing gas to form a second oxygen containing layer on the surface.
摘要翻译：本文所述的实施例提供了用于处理衬底的方法。一个实施例包括将衬底定位在处理室的处理区域中，将设置在处理室中的衬底的表面暴露于含氧气体，以在表面上形成第一含氧层，去除第一含氧层以暴露基底表面的至少一部分，并将基底的表面暴露于含氧气体，以在表面上形成第二含氧层。

5. 发明申请

US20120240853A1 LINER ASSEMBLY FOR CHEMICAL VAPOR DEPOSITION CHAMBER 有权
标题翻译：化学气相沉积室内衬组件
公开(公告)号：US20120240853A1
公开(公告)日：2012-09-27
申请号：US13193570
申请日：2011-07-28
申请人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
发明人： David K. Carlson , Mehmet Tugrul Samir , Nyi O. Myo
IPC分类号： C23C16/44 , C23C16/455
CPC分类号： C23C16/4404 , C23C16/45574 , C23C16/45578
摘要： Embodiments described herein relate to an apparatus and method for lining a processing region within a chamber. In one embodiment, a modular liner assembly for a substrate processing chamber is provided. The modular liner assembly includes a first liner and a second liner, each of the first liner and second liner comprising an annular body sized to be received in a processing volume of a chamber, and at least a third liner comprising a body that extends through the first liner and the second liner, the third liner having a first end disposed in the process volume and a second end disposed outside of the chamber.
摘要翻译：本文所述的实施例涉及用于衬里室内的处理区域的装置和方法。在一个实施例中，提供了一种用于衬底处理室的模块化衬垫组件。所述模块化衬垫组件包括第一衬垫和第二衬垫，所述第一衬垫和所述第二衬套中的每一个包括尺寸适于容纳在室的处理容积中的环形体，以及至少第三衬套，所述第三衬套包括延伸穿过所述腔体的主体第一衬里和第二衬套，第三衬里具有设置在处理体积中的第一端和设置在室外的第二端。

6. 发明申请

US20120006092A1 METHODS AND APPARATUS FOR INSITU ANALYSIS OF GASES IN ELECTRONIC DEVICE FABRICATION SYSTEMS 有权
标题翻译：电子设备制造系统气体分析方法与装置
公开(公告)号：US20120006092A1
公开(公告)日：2012-01-12
申请号：US13237144
申请日：2011-09-20
申请人： David K. Carlson , Satheesh Kuppurao
发明人： David K. Carlson , Satheesh Kuppurao
IPC分类号： G01N29/02
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译：公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。公开了许多其他方面。

7. 发明授权

US08020427B2 Methods and apparatus for insitu analysis of gases in electronic device fabrication systems 有权
标题翻译：电子设备制造系统中气体的原位分析方法和装置
公开(公告)号：US08020427B2
公开(公告)日：2011-09-20
申请号：US12833936
申请日：2010-07-09
申请人： David K. Carlson , Satheesh Kuppurao
发明人： David K. Carlson , Satheesh Kuppurao
IPC分类号： G01N7/00
CPC分类号： G01N33/0016 , Y10T137/85978
摘要： Systems and methods are disclosed that include adjusting a pressure level of a sample gas in a testing chamber, for example, using a pressurized inert reference gas, and determining a composition of the adjusted sample gas. By adjusting the pressure level of the sample gas, the composition of the sample gas may be determined more accurately than otherwise possible. Numerous other aspects are disclosed.
摘要翻译：公开了一种系统和方法，其包括调节测试室中的样品气体的压力水平，例如使用加压的惰性参考气体，以及确定经调节的样品气体的组成。通过调整样品气体的压力水平，可以比其它方法更准确地确定样品气体的组成。公开了许多其他方面。

8. 发明授权

US07645339B2 Silicon-containing layer deposition with silicon compounds 有权
标题翻译：含硅层沉积与硅化合物
公开(公告)号：US07645339B2
公开(公告)日：2010-01-12
申请号：US11549033
申请日：2006-10-12
申请人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
发明人： Kaushal K. Singh , Paul B. Comita , Lance A. Scudder , David K. Carlson
IPC分类号： C30B21/04
CPC分类号： C07F7/0896 , C01B33/04 , C01B33/107 , C07F7/12 , C23C16/24 , C23C16/30
摘要： Embodiments of the invention relate to methods for depositing silicon-containing materials on a substrate. In one example, a method for selectively and epitaxially depositing a silicon-containing material is provided which includes positioning and heating a substrate containing a crystalline surface and a non-crystalline surface within a process chamber, exposing the substrate to a process gas containing neopentasilane, and depositing an epitaxial layer on the crystalline surface. In another example, a method for blanket depositing a silicon-containing material is provide which includes positioning and heating a substrate containing a crystalline surface and feature surfaces within a process chamber and exposing the substrate to a process gas containing neopentasilane and a carbon source to deposit a silicon carbide blanket layer across the crystalline surface and the feature surfaces. Generally, the silicon carbide blanket layer contains a silicon carbide epitaxial layer selectively deposited on the crystalline surface.
摘要翻译：本发明的实施例涉及在衬底上沉积含硅材料的方法。在一个实例中，提供了一种用于选择性和外延沉积含硅材料的方法，其包括在处理室内定位和加热含有结晶表面和非结晶表面的基底，将基底暴露于含有新戊硅烷的工艺气体中，以及在所述晶体表面上沉积外延层。在另一个实例中，提供了一种用于覆盖沉积含硅材料的方法，其包括定位和加热含有结晶表面的基底和处理室内的特征表面，并将基底暴露于含有新戊硅烷和碳源的工艺气体沉积跨过结晶表面和特征表面的碳化硅毯层。通常，碳化硅覆盖层包含选择性地沉积在晶体表面上的碳化硅外延层。

9. 发明申请

US20090211523A1 Apparatus to Control Semiconductor Film Deposition Characteristics 有权
标题翻译：控制半导体膜沉积特性的装置
公开(公告)号：US20090211523A1
公开(公告)日：2009-08-27
申请号：US12394203
申请日：2009-02-27
申请人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
发明人： Satheesh Kuppurao , David K. Carlson , Manish Hemkar , Andrew Lam , Errol Sanchez , Howard Beckford
IPC分类号： B05C11/00
CPC分类号： C23C16/46 , C23C16/4411 , C23C16/52 , H01L21/67115 , H01L21/67248
摘要： Systems and apparatus are disclosed for adjusting the temperature of at least a portion of the surface of a reaction chamber during a film formation process to control film properties. More than one portion of the chamber surface may be temperature-modulated.
摘要翻译：公开了用于在成膜过程中调节反应室表面的至少一部分的温度以控制膜性质的系统和装置。腔表面的多于一个部分可以进行温度调制。

10. 发明授权

US06500734B2 Gas inlets for wafer processing chamber 失效
标题翻译：晶圆处理室气体入口
公开(公告)号：US06500734B2
公开(公告)日：2002-12-31
申请号：US09325597
申请日：1999-06-02
申请人： Roger N. Anderson , Peter W. Hey , David K. Carlson , Mahalingam Venkatesan , Norma Riley
发明人： Roger N. Anderson , Peter W. Hey , David K. Carlson , Mahalingam Venkatesan , Norma Riley
IPC分类号： H01L2120
CPC分类号： C23C16/45574 , C23C16/45504 , C23C16/45512 , H01L21/67017 , H01L21/67023
摘要： A system for supplying processing fluid to a substrate processing apparatus having walls, the inner surfaces of which define a processing chamber in which a substrate supporting susceptor is located. The system consists of a number of fluid storages, each which stores a separate processing fluid, at least two fluid conduits along which processing fluid flows from the fluid storages to the processing apparatus and a fluid inlet which connects the fluid conduits to the processing chamber. The inlet has a separate fluid passage, corresponding to each of the fluid conduits, formed along it. Each fluid passage opens at or near an inner surface of a wall to define a fluid mixing zone, so that fluid moving along one fluid passage is prevented from mixing with fluid moving along any other passage until reaching the mixing zone.
摘要翻译：一种用于向具有壁的基板处理装置提供处理流体的系统，其内表面限定了处理室，其中基板支撑基座位于该处理室中。该系统由许多流体储存器组成，每个流体存储器存储单独的处理流体，至少两个流体管道，处理流体从该流体流体流过流体储存器至处理装置;以及流体入口，其将流体导管连接到处理室。入口具有与沿其形成的每个流体管道相对应的单独的流体通道。每个流体通道在壁的内表面处或附近打开以限定流体混合区，从而防止沿着一个流体通道移动的流体与沿着任何其它通道移动的流体混合直至到达混合区。

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