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    • 22. 发明申请
    • Solid state imaging unit and endoscope
    • 固态成像单元和内窥镜
    • US20050280055A1
    • 2005-12-22
    • US11150182
    • 2005-06-13
    • Jin MurayamaTatsuya Hagiwara
    • Jin MurayamaTatsuya Hagiwara
    • A61B1/04A61B1/05A61B1/273H01L27/148H01L31/062H04N5/335H04N5/341H04N5/369H04N5/374
    • A61B1/05A61B1/053A61B1/2736H01L27/14843
    • A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area along the first direction, wherein the first area includes: a plurality of photoelectric conversion elements; and a plurality of vertical transfer channels formed adjacent to the plurality of photoelectric conversion elements; the second area includes: a horizontal transfer channel; and a floating diffusion region and a first stage drive FET of an amplifier; and the third area includes: a first state load FET, a second stage drive FET, a second stage load FET, a third stage drive FET and a third stage load FET, respectively of the amplifier. The solid state image pickup device can be made compact.
    • 固态摄像装置包括:限定在半导体衬底的主表面上的第一区域; 限定在沿着第一方向与所述第一区域相邻的区域中的第二区域; 以及沿着所述第一方向在与所述第二区域相邻的区域中限定的第三区域,其中所述第一区域包括:多个光电转换元件; 以及与所述多个光电转换元件相邻形成的多个垂直传输沟道; 第二区包括:水平传送通道; 以及放大器的浮动扩散区域和第一级驱动FET; 并且第三区域包括:放大器的第一状态负载FET,第二级驱动FET,第二级负载FET,第三级驱动FET和第三级负载FET。 可以使固态图像拾取装置紧凑。
    • 25. 发明申请
    • Range image system for obtaining subject image of predetermined distance position
    • 用于获取预定距离位置的被摄体图像的范围图像系统
    • US20080122933A1
    • 2008-05-29
    • US11812219
    • 2007-06-15
    • Jin Murayama
    • Jin Murayama
    • H04N5/33
    • H04N9/045H01L27/14621H01L27/14627H01L27/14837H01L27/14887H04N5/33H04N5/332H04N2209/045
    • A solid-state imaging device has a single plate structure and is capable of imaging of visible light and infrared light. While imaging of the visible light and the infrared light is performed by the imaging device every one-frame scanning period, an IR pulse is emitted, every other one-frame scanning period, to a space to be shot. A visible-light image is produced every one-frame scanning period. A range image from which influence to be caused by infrared component of the ambient light is removed is produced every other one-frame scanning period by subtracting an IR pixel image (S2IR), which is obtained by imaging of non-emission time of the IR pulse, from an IR pixel signal (S1IR), which is obtained by imaging of emission time of the IR pulse.
    • 固态成像装置具有单板结构,并且能够对可见光和红外光进行成像。 当通过成像装置在每一帧扫描周期执行可见光和红外光的成像时,每隔一个一帧扫描周期将IR脉冲发射到待拍摄的空间。 每一帧扫描周期产生可见光图像。 通过减去通过将非发光时间的成像获得的IR像素图像(S 2 IR),每隔一个一帧扫描周期,产生从环境光的红外分量引起的影响的范围图像 IR脉冲,通过对IR脉冲的发射时间进行成像而获得的IR像素信号(S 1 IR)。
    • 26. 发明授权
    • Solid state imaging unit and endoscope
    • 固态成像单元和内窥镜
    • US07365379B2
    • 2008-04-29
    • US11150182
    • 2005-06-13
    • Jin MurayamaTatsuya Hagiwara
    • Jin MurayamaTatsuya Hagiwara
    • H01L29/72
    • A61B1/05A61B1/053A61B1/2736H01L27/14843
    • A solid state image pickup device includes: a first area defined on a principal surface of a semiconductor substrate; a second area defined in an area adjacent to the first area along a first direction; and a third area defined in an area adjacent to the second area along the first direction, wherein the first area includes: a plurality of photoelectric conversion elements; and a plurality of vertical transfer channels formed adjacent to the plurality of photoelectric conversion elements; the second area includes: a horizontal transfer channel; and a floating diffusion region and a first stage drive FET of an amplifier; and the third area includes: a first state load FET, a second stage drive FET, a second stage load FET, a third stage drive FET and a third stage load FET, respectively of the amplifier. The solid state image pickup device can be made compact.
    • 固态摄像装置包括:限定在半导体衬底的主表面上的第一区域; 限定在沿着第一方向与所述第一区域相邻的区域中的第二区域; 以及沿着所述第一方向在与所述第二区域相邻的区域中限定的第三区域,其中所述第一区域包括:多个光电转换元件; 以及与所述多个光电转换元件相邻形成的多个垂直传输沟道; 第二区包括:水平传送通道; 以及放大器的浮动扩散区域和第一级驱动FET; 并且第三区域分别包括放大器的第一状态负载FET,第二级驱动FET,第二级负载FET,第三级驱动FET和第三级负载FET。 可以使固态图像拾取装置紧凑。
    • 27. 发明授权
    • Image display unit and method of manufacturing the same
    • 图像显示单元及其制造方法
    • US07227540B2
    • 2007-06-05
    • US10421945
    • 2003-04-24
    • Jin MurayamaKoichi KimuraShintaro WashizuFumitoshi Toyokawa
    • Jin MurayamaKoichi KimuraShintaro WashizuFumitoshi Toyokawa
    • G09G5/00
    • G09F9/372
    • An MEM unit according to the invention comprises an Si (silicon) substrate 1 having such a thickness as to transmit a visible light therethrough, an insulating layer 2 formed in contact with the upper surface of the Si substrate 1, a lower electrode layer 3 formed in contact with the upper surface of the insulating layer 2, a sacrificial layer gap 4 of a space formed in the partial region of the upper surface of the lower electrode layer 3, a movable film 5 formed on the upper surface of the lower electrode layer 3 to cover the sacrificial layer gap 4, an upper electrode 6 formed in contact with the upper part of the movable film 5, a contact hole 7 penetrating to reach the surface of the lower electrode layer 3 from the surface of the movable film 5, and a lower electrode 8 formed from the surroundings of the upper part of the contact hole 7 to the surface of the lower electrode layer 3 through the contact hole 7.
    • 根据本发明的MEM单元包括具有透射可见光的厚度的Si(硅)衬底1,与Si衬底1的上表面接触形成的绝缘层2,形成的下电极层3 与绝缘层2的上表面接触形成在下电极层3的上表面的部分区域中的空间的牺牲层间隙4,形成在下电极层的上表面上的可动膜5 如图3所示,覆盖牺牲层间隙4,与可动膜5的上部接触形成的上部电极6,从可动膜5的表面贯通到下部电极层3的表面的接触孔7, 以及从接触孔7的上部周围通过接触孔7到下电极层3的表面形成的下电极8。
    • 30. 发明授权
    • Drive circuit and method of testing the same
    • 驱动电路及其测试方法
    • US06552359B2
    • 2003-04-22
    • US09940912
    • 2001-08-29
    • Jin Murayama
    • Jin Murayama
    • H01L2358
    • G01R31/27
    • The drive circuit is formed on a substrate by a first fabrication process and drives a plurality of elements to be driven being formed on the substrate by a second fabrication process which is different from the first fabrication process. The drive circuit includes driver transistors provided between a first signal line and the plurality of elements to be driven, a control circuit for performing on-off control on the driver transistors and a test circuit for testing the drive circuit. The test circuit includes switching elements and resistor elements that are series connected between a second signal line and junctions of the driver transistors and the elements to be driven, respectively, and performs on-off control on the switching elements in response to a control signal. The testing method tests the drive circuit that has been formed on the substrate, before the plurality of elements to be driven are formed on the substrate. The method turns on the switching elements of the test circuit in response to the control signal and performs on-off control on the driver transistors by the control circuit.
    • 通过第一制造工艺在基板上形成驱动电路,并通过不同于第一制造工艺的第二制造工艺驱动要在基板上形成的多个待驱动元件。 驱动电路包括设置在第一信号线与待驱动的多个元件之间的驱动晶体管,用于对驱动晶体管进行开 - 关控制的控制电路和用于测试驱动电路的测试电路。 测试电路包括分别连接在第二信号线和驱动晶体管与被驱动元件的结之间的开关元件和电阻元件,并响应于控制信号对开关元件进行开 - 关控制。 在基板上形成多个被驱动元件之前,测试方法测试已经形成在基板上的驱动电路。 该方法响应于控制信号接通测试电路的开关元件,并通过控制电路对驱动晶体管进行开 - 关控制。