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21. 发明授权

US07045818B2 Semiconductor device and method of manufacturing the same comprising thin film containing low concentration of hydrogen 有权
标题翻译：半导体装置及其制造方法包括含有低浓度氢的薄膜
公开(公告)号：US07045818B2
公开(公告)日：2006-05-16
申请号：US10818425
申请日：2004-04-05
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L31/20 , H01L29/04 , H01L21/00
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）至5×10 20原子/ cm 3以上，同时也防止由于可能存在过剩氢气而导致的阻塞a-Si膜（13）的结晶电影。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

22. 发明申请

US20050287825A1 Laser anneal method of a semiconductor layer 有权
标题翻译：半导体层的激光退火方法
公开(公告)号：US20050287825A1
公开(公告)日：2005-12-29
申请号：US11207458
申请日：2005-08-18
申请人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi kuwahara
发明人： Hidenori Ogata , Ken Wakita , Kiyoshi Yoneda , Yoshihiro Morimoto , Tsutomu Yamada , Kazuhiro Imao , Takashi kuwahara
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/20 , H01L21/26 , H01L21/268 , H01L21/3205 , H01L21/324 , H01L21/336 , H01L21/42 , H01L21/4763 , H01L21/477 , H01L21/77 , H01L21/84 , H01L29/786
CPC分类号： H01L21/02686 , H01L21/02532 , H01L21/02691 , H01L21/2026 , H01L21/268 , H01L27/1296 , H01L29/66757 , H01L29/78675
摘要： For obtaining p-Si by irradiating a laser beam to an a-Si layer to polycrystallize, an energy level in a region to be irradiated by the laser beam is set such that a level at the rear area of the region along a scan direction of the laser beam is lower than that at the front area or the center area of the region. The energy level at the front area or the center area of the region is set such that it is substantially equal to or more than the upper limit energy level which maximizes a grain size of the p-Si obtained. Since an energy profile is set as described above, when the laser beam is scanned on the a-Si layer, an irradiated energy of the laser on the region is gradually lowered from the upper limit as the laser beam passes through, which allows the semiconductor layer to be annealed within an optimal energy level during the latter half of the annealing process.
摘要翻译：为了通过将激光束照射到a-Si层进行多晶化来获得p-Si，将由激光束照射的区域中的能级设定为使沿着扫描方向的区域的后部区域的电平激光束比区域前区域或中心区域低。该区域的前部区域或中心区域的能级被设定为使得所获得的p-Si的粒径最大化的上限能级基本上等于或大于该能级。由于如上所述设定能量分布，当在a-Si层上扫描激光束时，该区域上的激光的照射能量随着激光束通过而从上限逐渐降低，这允许半导体在退火过程的后半期间在最佳能级内退火的层。

23. 发明申请

US20050140277A1 Display device and method for manufacturing the same 有权
标题翻译：显示装置及其制造方法
公开(公告)号：US20050140277A1
公开(公告)日：2005-06-30
申请号：US11020815
申请日：2004-12-22
申请人： Koji Suzuki , Ryuji Nishikawa , Kiyoshi Yoneda
发明人： Koji Suzuki , Ryuji Nishikawa , Kiyoshi Yoneda
IPC分类号： H01L51/50 , H01L27/32 , H01L51/52 , H05B33/00 , H05B33/02 , H05B33/10 , H05B33/12 , H05B33/14 , H05B33/22 , H05B33/24 , H05B33/28
CPC分类号： H01L51/5265 , H01L27/3213 , H01L27/3244 , H01L51/5215
摘要： A display device having a plurality of pixels and which realizes a color display using emitted light of at least two wavelengths, wherein each pixel has a microresonator structure formed between a lower reflective film formed on a side near a substrate and an upper reflective film formed above the lower reflective film with an organic light emitting element layer therebetween. The lower reflective film is made of a metal thin film and a conductive resonator spacer layer which functions as a first electrode is provided between the lower reflective film and the organic light emitting element layer. A thickness of the conductive resonator spacer layer is changed by changing a number of layers or a number of remaining layers of a transparent conductive metal oxide layer made of ITO and a light transmissive layer 210 made of SiNx or the like corresponding to the light emission wavelength. The thickness can be changed based on the thicknesses of the ITO layer and the SiNx layer to be formed and removed by selectively removing an amorphous ITO layer or SiNx layer at upper layers using a polycrystalline ITO at a lower layer as an etching stopper from above the polycrystalline ITO. Light obtained in the organic light emitting element layer is intensified by the microresonator structure in which the optical length is adjusted by the conductive resonator spacer layer and is emitted to the outside.
摘要翻译：一种具有多个像素并且使用至少两个波长的发射光实现彩色显示的显示装置，其中每个像素具有形成在基板附近形成的下反射膜和上面形成的上反射膜之间的微谐振器结构具有其间的有机发光元件层的下反射膜。下反射膜由金属薄膜制成，并且在下反射膜和有机发光元件层之间设置用作第一电极的导电谐振器隔离层。通过改变由ITO制成的透明导电金属氧化物层的数量的层数或多个剩余层和由发光波长对应的SiNx等制成的透光层210来改变导电共振器间隔层的厚度。可以基于通过使用下层的多晶ITO作为蚀刻停止层从上方选择性地除去上层的非晶ITO层或SiNx层，基于要形成和除去的ITO层和SiN x层的厚度来改变厚度。多晶ITO。在有机发光元件层中获得的光被通过导电谐振器间隔层调整光学长度的微谐振器结构增强并被发射到外部。

24. 发明申请

US20050042809A1 Bottom gate-type thin-film transistor and method for manufacturing the same 审中-公开
公开(公告)号：US20050042809A1
公开(公告)日：2005-02-24
申请号：US10946037
申请日：2004-09-21
申请人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/136 , G02F1/00 , G02F1/1368 , G09F9/30 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1248 , H01L29/78621 , H01L29/78678
摘要： In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 1018 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.

25. 发明申请

US20050035348A1 Bottom gate-type thin-film transistor and method for manufacturing the same 失效
标题翻译：底栅型薄膜晶体管及其制造方法
公开(公告)号：US20050035348A1
公开(公告)日：2005-02-17
申请号：US10945233
申请日：2004-09-20
申请人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Nobuhiko Oda , Toshifumi Yamaji , Shiro Nakanishi , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/136 , G02F1/00 , G02F1/1368 , G09F9/30 , H01L21/00 , H01L21/336 , H01L21/77 , H01L21/8238 , H01L21/84 , H01L27/12 , H01L29/04 , H01L29/786
CPC分类号： H01L29/66765 , H01L27/12 , H01L27/1248 , H01L29/78621 , H01L29/78678
摘要： In a bottom gate-type thin-film transistor manufacturing method, after ion doping, an ion stopper (55) is removed. The ion stopper (55) does not remain in the interlayer insulating film (8) lying immediately above the gate electrode. The thin-film transistor has such a structure that no ion stopper (55), and the interlayer insulating layer is in direct contact with at least the channel region of the semiconductor layer (4). The impurity concentration in the vicinity of the interface between the interlayer insulating film and the semiconductor layer 4 is 1018 atoms/cc or less. This structure can prevent the back channel phenomenon and reduce variations in characteristic resulting from variations in manufacturing.
摘要翻译：在底栅型薄膜晶体管制造方法中，在离子掺杂之后，去除离子塞（55）。离子限制器（55）不会留在位于栅电极正上方的层间绝缘膜（8）中。薄膜晶体管具有这样的结构：离子阻挡层（55）和层间绝缘层至少与半导体层（4）的沟道区域直接接触。层间绝缘膜和半导体层4之间的界面附近的杂质浓度为10 18原子/ cc以下。这种结构可以防止反向通道现象，并减少由制造变化引起的特性变化。

26. 发明授权

US06750086B2 Semiconductor device having a semiconductor thin film containing low concentration of unbound hydrogen atoms and method of manufacturing the same 失效
标题翻译：具有含有低浓度未结合氢原子的半导体薄膜的半导体器件及其制造方法
公开(公告)号：US06750086B2
公开(公告)日：2004-06-15
申请号：US09049353
申请日：1998-03-27
申请人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Yushi Jinno , Shiro Nakanishi , Kyoko Hirai , Tsutomu Yamada , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： H01L2100
CPC分类号： H01L27/127 , H01L27/1214 , H01L29/66765 , H01L29/78621
摘要： In a fabrication process of a semiconductor device for use in a TFT liquid crystal display system, before the start of crystallizing amorphous silicon (a-Si), dehydrogenation annealing is carried out to not only decrease the density of hydrogen in the p-Si film (13) to 5×1020 atoms/cm3 at most but also to prevent crystallization of the a-Si film (13) being obstructed due to possible excessive hydrogen remaining in the film. With the p-Si film (13) covered with an interlayer insulation film (15) in the form of a plasma nitride film, annealing is then carried out in nitrogen atmosphere at a temperature of 350° C. to 400° C. for one to three hours, more preferably 400° C. for two hours. The result is that hydrogen atoms in the p-Si film (13) efficiently terminate dangling bonds of the film and hence do not become excessive, thus improving the electrical characteristics of the semiconductor device.
摘要翻译：在用于TFT液晶显示系统的半导体器件的制造工艺中，在开始结晶非晶硅（a-Si）之前，进行脱氢退火以不仅降低p-Si膜中的氢的密度（13）〜5×10 20原子/ cm 3以下，同时也防止由于膜中剩余的氢过量而导致的阻塞a-Si膜的结晶化。在用等离子体氮化物膜形式的层间绝缘膜（15）覆盖的p-Si膜（13）上，然后在氮气气氛中在350℃至400℃的温度下进行退火，一个至3小时，更优选400℃2小时。结果是，p-Si膜（13）中的氢原子有效地终止膜的悬挂键，因此不会变得过大，从而改善了半导体器件的电特性。

27. 发明授权

US5837568A Manufacturing method of semiconductor devices 失效
标题翻译：半导体器件的制造方法
公开(公告)号：US5837568A
公开(公告)日：1998-11-17
申请号：US763556
申请日：1996-12-10
申请人： Kiyoshi Yoneda , Yoshihiro Morimoto , Kiichi Hirano , Koji Suzuki , Masaru Takeuchi
发明人： Kiyoshi Yoneda , Yoshihiro Morimoto , Kiichi Hirano , Koji Suzuki , Masaru Takeuchi
IPC分类号： H01L21/223 , H01L21/336 , H01L29/786 , H01L21/339
CPC分类号： H01L29/66757 , H01L21/2236 , H01L29/78621
摘要： To provide a manufacturing method of thin film transistors (TFT) using poly-silicone and having an LDD structure. In particular, the LDD sections of the TFTs are formed in an improved method so as to achieve a high throughput and stable performance of the TFTs. To be specific, the LD region is doped at a low concentration in the ion implantation method which includes mass spectrometry because high controllability over a dose is required. On the other hand, the source and drain regions are doped at a higher concentration than the LD region in the ion showering method which does not include mass spectrometry. Using the ion showering method, poly-crystal silicon can be doped such that less doping damage is caused thereto. This makes it possible to apply a lower temperature for annealing, such as RTA, to activate doped impurities so as to prevent the substrate from being curved. Further, combination of the ion implantation method and the showering method achieves a high throughput production of TFTs having stable performance.
摘要翻译：提供使用聚硅氧烷并具有LDD结构的薄膜晶体管（TFT）的制造方法。特别地，TFT的LDD部分以改进的方法形成，以便实现TFT的高吞吐量和稳定的性能。具体地说，在包括质谱法的离子注入方法中，以低浓度掺杂LD区域，因为需要剂量的高可控性。另一方面，在不包括质谱法的离子喷淋法中，源极和漏极区域以比LD区域更高的浓度被掺杂。使用离子喷淋法，可以掺杂多晶硅，使得对其造成较少的掺杂损伤。这使得可以施加较低的退火温度，例如RTA，以激活掺杂杂质，以防止基板弯曲。此外，离子注入方法和喷淋方法的组合实现了具有稳定性能的TFT的高产量生产。

28. 发明授权

US5801771A Keyboard and video camera control system 失效
标题翻译：键盘和摄像机控制系统
公开(公告)号：US5801771A
公开(公告)日：1998-09-01
申请号：US682161
申请日：1996-07-17
申请人： Hirotsugu Ohwaki , Kiyoshi Yoneda
发明人： Hirotsugu Ohwaki , Kiyoshi Yoneda
IPC分类号： G06F3/02 , G06F3/023 , G06F3/033 , H01H25/04 , H04N5/222 , H04N5/232 , H04Q9/00 , G09G5/08
CPC分类号： G06F3/0219 , G06F3/0213 , H04N5/232 , Y10T74/20201
摘要： A keyboard has a joyball centrally positioned and operable by the operator with a hand, and a plurality of operation keys operable by the operator with the fingertips and disposed in a substantially semicircular array around the joyball. The keyboard is connected to a video camera for controlling the attitude of the video camera with the joyball and adjusting the optical system of the video camera, all with one hand of the operator.
摘要翻译：键盘具有操纵者中心地定位和操作的操纵器，并且操作者可用手指操作多个操作键，并且操作者可以用指尖操作，并且围绕操纵球以大致半圆形的阵列布置。键盘连接到摄像机，用于控制摄像机的姿态，并且通过操作者的一只手来调节摄像机的光学系统。

29. 发明授权

US5723366A Dry etching method, method of fabricating semiconductor device, and method of fabricating liquid crystal display device 失效
标题翻译：干式蚀刻方法，制造半导体器件的方法以及制造液晶显示装置的方法
公开(公告)号：US5723366A
公开(公告)日：1998-03-03
申请号：US535449
申请日：1995-09-28
申请人： Koji Suzuki , Kaoru Takeda , Yoshihiro Morimoto , Kiyoshi Yoneda
发明人： Koji Suzuki , Kaoru Takeda , Yoshihiro Morimoto , Kiyoshi Yoneda
IPC分类号： G02F1/1343 , H01L21/465
CPC分类号： G02F1/13439
摘要： A dry etching method includes the steps of etching a transparent electrode film by reactive ion etching with a first etching gas, changing the first etching gas to a second etching gas, and etching the transparent electrode film by reactive ion etching with the second etching gas. A chlorine containing gas is employed as the second etching gas.
摘要翻译：干蚀刻方法包括以下步骤：通过用第一蚀刻气体进行反应离子蚀刻来蚀刻透明电极膜，将第一蚀刻气体改变为第二蚀刻气体，并用第二蚀刻气体通过反应离子蚀刻来蚀刻透明电极膜。采用含氯气体作为第二蚀刻气体。

30. 发明授权

US4833100A Method for producing a silicon thin film by MBE using silicon beam precleaning 失效
标题翻译：使用硅光束预清洗通过MBE制造硅薄膜的方法
公开(公告)号：US4833100A
公开(公告)日：1989-05-23
申请号：US939101
申请日：1986-12-08
申请人： Hiroshi Hanafusa , Kiyoshi Yoneda , Hidenori Ogata
发明人： Hiroshi Hanafusa , Kiyoshi Yoneda , Hidenori Ogata
IPC分类号： H01L21/20 , H01L21/203
CPC分类号： H01L21/02532 , H01L21/0242 , H01L21/02433 , H01L21/02631 , H01L21/02658 , H01L21/02661 , Y10S148/017 , Y10S148/025 , Y10S148/169
摘要： The present invention relates to a method for producing a semiconductor thin film, in which a single crystalline silicon film is grown on an insulative single crystalline substrate, such as a single crystalline sapphire substrate, by the molecular beam epitaxy method. Silicon molecular beams are irradiated onto the substrate under the conditions wherein a substrate temperature is kept at 700.degree. to 900.degree. C. and an intensity of the molecular beams is kept within a range from 1.times.10.sup.12 atoms/cm.sup.2 .multidot.sec to 1.times.10.sup.13 atoms/cm.sup.2 .multidot.sec to clean a surface of the substrate and then the intensity of the molecular beams is increased to form the single crystalline silicon film. Thus, the substrate can be cleaned without being defected.
摘要翻译：本发明涉及通过分子束外延法在单晶蓝宝石衬底等绝缘性单晶衬底上生长单晶硅膜的半导体薄膜的制造方法。在基板温度保持在700〜900℃的条件下将硅分子束照射到基板上，分子束的强度保持在1×10 12原子/ cm 2×1〜1×10 13原子/ cm 2×的范围内，以清洁然后增加分子束的强度，形成单晶硅膜。因此，可以清洁基板而不会发生缺陷。

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