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21. 发明申请

US20060231016A1 Deposition apparatuses 审中-公开
标题翻译：沉积装置
公开(公告)号：US20060231016A1
公开(公告)日：2006-10-19
申请号：US11471106
申请日：2006-06-19
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Alan Colwell , Eduardo Tovar
IPC分类号： C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/67248 , C23C16/481 , C23C16/52 , C30B25/165 , C30B31/18
摘要： The invention includes deposition apparatuses configured to monitor the temperature of a semiconductor wafer substrate by utilizing conduits which channel radiation from the substrate to a detector/signal processor system. In particular aspects, the temperature of the substrate can be measured while the substrate is spinning within a reaction chamber. The invention also includes deposition apparatuses in which flow of mixed gases is controlled by mass flow controllers provided downstream of the location where the gases are mixed and/or where flow of gases is measured with mass flow measurement devices provided downstream of the location where the gases are mixed. Additionally, the invention encompasses deposition apparatuses in which mass flow controllers and/or mass flow measurement devices are provided upstream of a header which splits a source gas into multiple paths directed toward multiple different reaction chambers.
摘要翻译：本发明包括沉积设备，其被配置为通过利用将辐射从衬底传送到检测器/信号处理器系统的管道来监测半导体晶片衬底的温度。在特定方面，可以在衬底在反应室内旋转的同时测量衬底的温度。本发明还包括沉积装置，其中混合气体的流动由设置在气体混合位置下游的质量流量控制器控制，和/或在气体流量测量时，质量流量测量装置设置在气体的位置的下游混合此外，本发明还包括沉积装置，其中质量流量控制器和/或质量流量测量装置设置在将源气体分成多个指向多个不同反应室的路径的集管的上游。

22. 发明申请

US20060097849A1 Wireless communication devices and methods of forming and operating the same 审中-公开
标题翻译：无线通信设备及其形成和操作的方法
公开(公告)号：US20060097849A1
公开(公告)日：2006-05-11
申请号：US11312669
申请日：2005-12-19
申请人： Ross Dando
发明人： Ross Dando
IPC分类号： H04Q5/22
CPC分类号： G06K19/07749 , H01L23/49855 , H01L2224/16 , H01L2924/0102 , H01L2924/01079 , H01L2924/3025
摘要： The present invention relates to wireless communication devices and methods of forming and operating the same. The present invention provides a wireless communication device including a substrate having a support surface, wireless communication circuitry upon the support surface of the substrate, at least one antenna electrically coupled with the wireless communication circuitry, a conductive layer configured to interact with the antenna, and an insulative layer intermediate the conductive layer and the antenna. A method of forming a wireless communication device includes providing a substrate having a support surface, forming an antenna upon the support surface, conductively coupling wireless communication circuitry with the antenna, forming an insulative layer over at least a portion of the antenna, and providing a conductive layer over at least a portion of the insulative layer.
摘要翻译：本发明涉及无线通信装置及其形成和操作方法。本发明提供了一种无线通信设备，其包括具有支撑表面的基板，在基板的支撑表面上的无线通信电路，与无线通信电路电耦合的至少一个天线，被配置为与天线相互作用的导电层，以及在导电层和天线之间的绝缘层。一种形成无线通信设备的方法包括提供具有支撑表面的基板，在支撑表面上形成天线，将无线通信电路与天线导电耦合，在天线的至少一部分上形成绝缘层，并提供绝缘层的至少一部分上的导电层。

23. 发明申请

US20070190785A1 Methods, apparatus, and systems for causing fluid to flow through or into via holes, vents, and other openings or recesses that communicate with surfaces of substrates of semiconductor device components 有权
标题翻译：使流体流过或穿过通孔，通风口以及与半导体器件部件的基板表面连通的其它开口或凹槽的方法，装置和系统
公开(公告)号：US20070190785A1
公开(公告)日：2007-08-16
申请号：US11351640
申请日：2006-02-10
申请人： Ross Dando
发明人： Ross Dando
IPC分类号： H01L21/302 , H01L21/306
CPC分类号： H01L21/30604 , C09K13/00 , H01L21/67075 , H01L21/6708 , H01L21/67086
摘要： A method for removing material from surfaces of at least a portion of at least one recess or at least one aperture extending into a surface of a substrate includes pressurizing fluid so as to cause the fluid to flow into the at least one recess or at least one aperture. The fluid may be pressurized by generating a pressure differential across the substrate, which causes the fluid to flow into or through the at least one aperture or recess. Apparatus for pressurizing fluid so as to cause it to flow into or through recesses or apertures in a substrate are also disclosed.
摘要翻译：从至少一个凹部的至少一部分的至少一部分的表面上移除材料的方法或至少一个延伸到衬底的表面中的孔的方法包括加压流体，以使流体流入至少一个凹部或至少一个凹部光圈。流体可以通过在衬底上产生压差来加压，这导致流体流入或穿过至少一个孔或凹槽。还公开了用于加压流体以使其流入或穿过基底中的凹部或孔的装置。

24. 发明申请

US20060243208A1 Substrate susceptors for receiving semiconductor substrates to be deposited upon 审中-公开
公开(公告)号：US20060243208A1
公开(公告)日：2006-11-02
申请号：US11444789
申请日：2006-05-31
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
IPC分类号： C23C16/00
CPC分类号： C23C16/481 , C23C14/505 , C23C14/541 , C23C16/45521 , C23C16/4584 , C23C16/52 , C30B25/02 , C30B29/06
摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.

25. 发明申请

US20060216945A1 Methods of depositing materials over semiconductor substrates 审中-公开
标题翻译：在半导体衬底上沉积材料的方法
公开(公告)号：US20060216945A1
公开(公告)日：2006-09-28
申请号：US11444953
申请日：2006-05-31
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
IPC分类号： H01L21/31 , C23C16/52 , H01L21/66 , C23C16/00
CPC分类号： C23C16/481 , C23C14/505 , C23C14/541 , C23C16/45521 , C23C16/4584 , C23C16/52 , C30B25/02 , C30B29/06
摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.
摘要翻译：在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底接收侧，后侧和周缘。在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。考虑了其他方面和实现。

26. 发明申请

US20060213445A1 Deposition apparatuses 审中-公开
标题翻译：沉积装置
公开(公告)号：US20060213445A1
公开(公告)日：2006-09-28
申请号：US11444744
申请日：2006-05-31
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes
IPC分类号： C23C16/00
CPC分类号： H01L21/67115 , C23C16/481 , C23C16/52
摘要： The invention includes deposition apparatuses having reflectors with rugged reflective surfaces configured to disperse light reflected therefrom, and/or having dispersers between lamps and a substrate. The invention also includes optical methods for utilization within a deposition apparatus for assessing the alignment of a substrate within the apparatus and/or for assessing the thickness of a layer of material deposited within the apparatus.
摘要翻译：本发明包括具有反射器的沉积设备，其具有凹凸反射表面，其被配置为分散从其反射的光，和/或在灯和基板之间具有分散器。本发明还包括用于在沉积设备中利用的光学方法，用于评估设备内的衬底的对准和/或用于评估沉积在设备内的材料层的厚度。

27. 发明申请

US20050249887A1 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 有权
标题翻译：用于在反应室中的微型工件上沉积材料的方法和用于将材料沉积到微特征工件上的方法
公开(公告)号：US20050249887A1
公开(公告)日：2005-11-10
申请号：US10840571
申请日：2004-05-06
申请人： Ross Dando , Dan Gealy
发明人： Ross Dando , Dan Gealy
IPC分类号： C23C16/00 , C23C16/04 , C23C16/48
CPC分类号： C23C16/047 , C23C16/45525 , C23C16/483 , C23C16/52
摘要： Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces are disclosed herein. In one embodiment, a method includes depositing molecules of a gas onto a microfeature workpiece in the reaction chamber and selectively irradiating a first portion of the molecules on the microfeature workpiece in the reaction chamber with a selected radiation without irradiating a second portion of the molecules on the workpiece with the selected radiation. The first portion of the molecules can be irradiated to activate the portion of the molecules or desorb the portion of the molecules from the workpiece. The first portion of the molecules can be selectively irradiated by impinging the first portion of the molecules with a laser beam or other energy source.
摘要翻译：本文公开了在反应室中的微型工件上沉积材料的方法和用于将材料沉积到微特征工件上的系统。在一个实施方案中，一种方法包括将气体的分子沉积到反应室中的微特征工件上，并用选定的辐射选择性地照射反应室中的微特征工件上的分子的第一部分，而不会将分子的第二部分工件与选定的辐射。可以照射分子的第一部分以激活分子的一部分或从工件解吸部分分子。分子的第一部分可以通过用激光束或其他能量源撞击分子的第一部分来选择性地照射。

28. 发明申请

US20120061786A1 ISOLATED BOND PAD WITH CONDUCTIVE VIA INTERCONNECT 有权
标题翻译：隔离的粘结垫通过互连连接
公开(公告)号：US20120061786A1
公开(公告)日：2012-03-15
申请号：US12879452
申请日：2010-09-10
申请人： Kevin Hutto , Ross Dando , Swarnal Borthakur , Richard Mauritzson
发明人： Kevin Hutto , Ross Dando , Swarnal Borthakur , Richard Mauritzson
IPC分类号： H01L31/0232 , H01L31/18 , H01L23/528
CPC分类号： H01L31/02327 , H01L21/76898 , H01L23/481 , H01L27/14636 , H01L27/1464 , H01L27/14689 , H01L2924/0002 , H01L2924/00
摘要： An integrated circuit for use, for example, in a backside illuminated imager device includes circuitry provided on a first side of a substrate, a first conductive pad connected to the circuitry and spaced from the first side of the substrate, a second conductive pad spaced from a second side of the substrate, an electrically conductive interconnect formed through the substrate to interconnect the first and second conductive pads, and a dielectric surrounding the second conductive pad and at least a portion of the interconnect. Methods of forming the integrated circuit are also described.
摘要翻译：用于例如背面照明成像器件的集成电路包括设置在衬底的第一侧上的电路，连接到电路并与衬底的第一侧间隔开的第一导电焊盘，与衬底间隔开的第二导电焊盘衬底的第二侧，通过衬底形成的用于互连第一和第二导电焊盘的导电互连，以及围绕第二导电焊盘和至少一部分互连的电介质。还描述了形成集成电路的方法。

29. 发明申请

US20070087576A1 Substrate susceptor for receiving semiconductor substrates to be deposited upon 审中-公开
标题翻译：用于接收要沉积的半导体衬底的衬底感受体
公开(公告)号：US20070087576A1
公开(公告)日：2007-04-19
申请号：US11601232
申请日：2006-11-17
申请人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
发明人： Eric Blomiley , Nirmal Ramaswamy , Ross Dando , Joel Drewes , Danny Dynka
IPC分类号： C23C16/00 , H01L21/31
CPC分类号： C23C16/481 , C23C14/505 , C23C14/541 , C23C16/45521 , C23C16/4584 , C23C16/52 , C30B25/02 , C30B29/06
摘要： In one implementation, a substrate susceptor for receiving a semiconductor substrate for selective epitaxial silicon-comprising depositing thereon, where the depositing comprises measuring emissivity of the susceptor from at least one susceptor location in a non-contacting manner, includes a body having a front substrate receiving side, a back side, and a peripheral edge. At least one susceptor location from which emissivity is to be measured is received on at least one of the front substrate receiving side, the back side, and the edge. Such at least one susceptor location comprises an outermost surface comprising a material upon which selective epitaxial silicon will not deposit upon during selective epitaxial silicon depositing on a semiconductor substrate received by the susceptor for at least an initial thickness of epitaxial silicon depositing on said substrate. Other aspects and implementations are contemplated.
摘要翻译：在一个实施方案中，用于接收用于选择性外延硅的半导体衬底的衬底感受体包括沉积在其上，其中所述沉积包括以非接触方式从至少一个感受器位置测量所述基座的发射率，所述衬底基座包括具有前衬底接收侧，后侧和周缘。在前基板接收侧，后侧和边缘中的至少一个上接收要测量发射率的至少一个感受器位置。这样的至少一个感受器位置包括最外表面，其包括材料，选择性外延硅将不会沉积在选择性外延硅沉积在由基座接收的半导体衬底上，以至少沉积在所述衬底上的外延硅的初始厚度。考虑了其他方面和实现。

30. 发明申请

US20070049016A1 Microfeature workpieces and methods for forming interconnects in microfeature workpieces 有权
标题翻译：微型工件和在微型工件中形成互连的方法
公开(公告)号：US20070049016A1
公开(公告)日：2007-03-01
申请号：US11217169
申请日：2005-09-01
申请人： William Hiatt , Ross Dando
发明人： William Hiatt , Ross Dando
IPC分类号： H01L21/44
CPC分类号： H01L21/76898 , H01L23/481 , H01L2224/13025
摘要： Methods for forming interconnects in microfeature workpieces, and microfeature workpieces having such interconnects are disclosed herein. The microfeature workpieces may have a terminal and a substrate with a first side carrying the terminal and a second side opposite the first side. In one embodiment, a method includes (a) constructing an electrically conductive interconnect extending from the terminal to at least an intermediate depth in the substrate with the interconnect electrically connected to the terminal, and (b) removing material from the second side of the substrate so that a portion of the interconnect projects from the substrate.
摘要翻译：在微型工件中形成互连的方法以及具有这种互连的微型工件在此公开。微型工件可以具有端子和具有承载端子的第一侧和与第一侧相对的第二侧的基板。在一个实施例中，一种方法包括（a）构造从终端延伸到衬底中的至少中间深度的导电互连，其中互连电连接到端子，以及（b）从衬底的第二侧去除材料使得互连的一部分从基板突出。

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