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    • 26. 发明授权
    • Fiber optic field programmable gate array integrated circuit packaging
    • 光纤现场可编程门阵列集成电路封装
    • US06945712B1
    • 2005-09-20
    • US10376915
    • 2003-02-27
    • Robert O. Conn
    • Robert O. Conn
    • G02B6/38G02B6/42G02B6/43
    • G02B6/4214G02B6/3897G02B6/4246G02B6/4292G02B6/43H01L2224/48091H01L2224/48227H01L2924/15311H01L2924/00014
    • An FPGA is readily connectable to a high-speed fiber optic link by snap fitting an external fiber optic cable into an accommodating duplex fiber optic connector of a low-profile packaged FPGA integrated circuit. The low-profile packaged FPGA integrated circuit includes a die-bonded assembly disposed within a co-fired multilayer ceramic integrated circuit package. The die-bonded assembly includes the optoelectronic die, the bottom surface of which is die-bonded and electrically interconnected by micropads to the upper surface of the core of an FPGA integrated circuit die. A first optical fiber communicates light from the connector, through the package, and to a photodetector on the optoelectronic die. A second optical fiber communicates light from a laser diode on the optoelectronic die, through the package, and to the connector. In some embodiments, a micromirror device is disposed within the package to redirect light between the optoelectronic die and the optical fibers.
    • 通过将外部光纤电缆卡扣配合到低调封装的FPGA集成电路的容纳双工光纤连接器中,FPGA可以容易地连接到高速光纤链路。 薄型封装的FPGA集成电路包括设置在共烧多层陶瓷集成电路封装内的芯片结合组件。 芯片接合组件包括光电裸片,其底表面被芯片键合并且通过微型电子电互连到FPGA集成电路芯片的芯的上表面。 第一光纤将来自连接器的光,通过封装传送到光电管芯上的光电检测器。 第二光纤将来自光电裸片上的激光二极管的光,通过封装和连接器通信。 在一些实施例中,微反射镜装置设置在封装内以在光电管芯和光纤之间重定向光。
    • 28. 发明授权
    • Electrically programmable antifuse using metal penetration of a P-N
junction
    • 使用金属穿透P-N结的电可编程反熔丝
    • US5852323A
    • 1998-12-22
    • US784226
    • 1997-01-16
    • Robert O. Conn
    • Robert O. Conn
    • H01L23/525H01L29/00
    • H01L23/5252H01L2924/0002H01L2924/3011
    • An antifuse is described that can be formed without masks or mask steps beyond those required for a conventional CMOS process. The antifuse includes adjacent p-type and n-type diffusion regions that together form a P-N junction. The diffusion regions are tapered toward one another such that the P-N junction is located at a necked-down region of the antifuse. The diffusion regions are connected to respective terminals of a programming-voltage source via first and second metal electrical contacts, typically of aluminum metal. Each of the first and second electrical contacts includes a point directed toward the other of the first and second electrical contacts. The antifuse is programmed by providing a reverse-bias programming voltage across the electrical contacts. This programming voltage exceeds the breakdown voltage of the P-N junction so that current flows through the necked-down region of the antifuse between the points on the respective first and second electrical contacts. This current heats the region between the opposite points to create a hot filament between the first and second metal contacts. Metal from the metal contacts then diffuses along the filament to form a conductor between metal contacts.
    • 描述了可以在没有常规CMOS工艺所需的掩模或掩模步骤的情况下形成反熔丝。 反熔丝包括一起形成P-N结的相邻的p型和n型扩散区。 扩散区域朝向彼此逐渐变细,使得P-N结位于反熔丝的颈缩区域。 扩散区域通过第一和第二金属电触点(通常为铝金属)连接到编程电压源的相应端子。 第一和第二电触头中的每一个包括指向第一和第二电触头中的另一个的点。 通过在电触点上提供反向偏置编程电压来编程反熔丝。 该编程电压超过P-N结的击穿电压,使得电流流过相应的第一和第二电触点之间的点之间的反熔丝的颈缩区域。 该电流加热相对点之间的区域,以在第一和第二金属触点之间产生热丝。 来自金属接触件的金属然后沿着细丝扩散以在金属触点之间形成导体。