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21. 发明授权

US4981770A Process for fabrication of device 失效
标题翻译：装置制造工艺
公开(公告)号：US4981770A
公开(公告)日：1991-01-01
申请号：US387554
申请日：1989-07-28
申请人： Gary N. Taylor
发明人： Gary N. Taylor
IPC分类号： G03F7/038 , G03F7/26
CPC分类号： G03F7/038 , G03F7/265 , Y10S430/168
摘要： The use of a surface treatment approach to lithography, depending on a radiation-induced change in hydrophilicity, shows particular promise for deep UV, vacuum ultraviolet and x-ray lithography. For example, hydrophobic chlorinated polystyrene is selectively irradiated in the presence of oxygen producing local hydrophilic regions. Subsequent treatment of these hydrophilic regions with water followed by an organometallic or inorganic gas such as TiCl.sub.4 yields a patterned, surface metal oxide suitable as, for example, an etch mask for further patterning of the underlying polymer film and device regions.
摘要翻译：根据辐射诱导的亲水性变化，使用表面处理方法进行光刻，对于深紫外线，真空紫外线和X射线光刻显示出特别的希望。例如，在产生局部亲水区域的氧的存在下选择性地照射疏水性氯化聚苯乙烯。随后用水然后用有机金属或无机气体例如TiCl 4处理这些亲水区域，得到适合于例如用于进一步图案化下面的聚合物膜和器件区域的蚀刻掩模的图案化的表面金属氧化物。

22. 发明授权

US4400235A Etching apparatus and method 失效
标题翻译：蚀刻装置及方法
公开(公告)号：US4400235A
公开(公告)日：1983-08-23
申请号：US362045
申请日：1982-03-25
申请人： Gerald A. Coquin , Joseph M. Moran , Gary N. Taylor
发明人： Gerald A. Coquin , Joseph M. Moran , Gary N. Taylor
IPC分类号： H01L21/673 , H01L21/306 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： H01L21/68771
摘要： In a plasma-assisted dry etching process designed to pattern VLSI devices, a relatively high and uniform etch rate exhibiting low contamination is achieved over the entire surface extent of each wafer to be etched. This is accomplished by mounting the wafers in a unique fashion on one of two spaced-apart electrodes in the reaction chamber of a dry etching system. In particular, the front surface of each wafer is maintained in substantially the same plane as that of surrounding dielectric material. Additionally, the thickness of the surrounding dielectric material is designed to be considerably greater than the thickness of any dielectric material in contact with the back surface of each wafer. In that way, the entire front surface extent of each wafer is influenced by a relatively uniform electric field. Moreover, the available field in the chamber is in effect focussed onto the wafer surfaces, thereby achieving a relatively high etch rate characterized by low contamination.
摘要翻译：在设计用于图案化VLSI器件的等离子体辅助干蚀刻工艺中，在待蚀刻的每个晶片的整个表面程度上实现了表现出低污染的较高且均匀的蚀刻速率。这是通过将干燥蚀刻系统的反应室中的两个间隔开的电极之一以独特的方式安装晶片来实现的。特别地，每个晶片的前表面保持在与周围电介质材料基本相同的平面上。此外，周围电介质材料的厚度被设计成比与每个晶片的背面接触的任何电介质材料的厚度大得多。以这种方式，每个晶片的整个前表面范围受相对均匀的电场的影响。此外，腔室中的可用场效应实际上集中在晶片表面上，从而实现以低污染为特征的较高蚀刻速率。

23. 发明授权

US4377437A Device lithography by selective ion implantation 失效
标题翻译：通过选择性离子注入器件光刻
公开(公告)号：US4377437A
公开(公告)日：1983-03-22
申请号：US266220
申请日：1981-05-22
申请人： Gary N. Taylor , Thirumalai N. C. Venkatesan
发明人： Gary N. Taylor , Thirumalai N. C. Venkatesan
IPC分类号： C03C23/00 , C04B41/53 , C23C14/48 , G03F7/20 , H01L21/311 , H01L21/3115 , B44C1/22 , C03C15/00 , C03C25/06
CPC分类号： C04B41/5346 , C03C23/0055 , C03C23/006 , C23C14/48 , G03F7/2065 , H01L21/31116 , H01L21/31138 , H01L21/31155
摘要： A method is shown whereby implanted ions, for example indium or gallium ions, are used to selectively define a pattern on a material, typically a polymer. The implanted regions react with a plasma (for example, an oxygen plasma) to form a patterned, nonvolatile protective layer (e.g., indium oxide or gallium oxide) on the material. Subsequent etching, which can typically be accomplished by the same plasma, produces a negative tone pattern. Materials other than polymers can be utilized. For example, an indium implant in SiO.sub.2 allows direct pattern generation by exposure to a fluorine plasma, without the use of a separate polymeric resist.
摘要翻译：示出了一种方法，其中使用注入的离子，例如铟或镓离子来选择性地限定材料（通常为聚合物）上的图案。注入区域与等离子体（例如，氧等离子体）反应以在材料上形成图案化的非挥发性保护层（例如氧化铟或氧化镓）。通常可以通过相同等离子体实现的后续蚀刻产生负色调图案。可以使用聚合物以外的材料。例如，SiO 2中的铟注入允许通过暴露于氟等离子体而直接产生图案，而不使用单独的聚合抗蚀剂。

24. 发明授权

US4232110A Solid state devices formed by differential plasma etching of resists 失效
标题翻译：通过抗蚀剂的差分等离子体蚀刻形成的固态器件
公开(公告)号：US4232110A
公开(公告)日：1980-11-04
申请号：US19711
申请日：1979-03-12
申请人： Gary N. Taylor
发明人： Gary N. Taylor
IPC分类号： H01L21/302 , G03F7/033 , G03F7/36 , H01L21/30 , H01L21/311 , H05K3/00 , G03C5/00
CPC分类号： G03F7/36 , G03F7/033 , H01L21/31133 , H01L21/31138 , Y10S430/168
摘要： A process of dry etching to form negative resist patterns is described. A host polymer is mixed with one or more monomers capable of being locked into place by electromagnetic radiation and is deposited as a film on a substrate. The film is then selectively irradiated, and then fixed by heating, or vacuum, or both, and etched by means of an oxygen plasma. The rate of removal is higher in the unirradiated region than in the irradiated region, yielding a negative resist pattern. A sensitizer may be added to allow use of various radiation wavelengths. The desirable properties of monomer and host polymer materials are discussed, and specific compositions given of aromatic monomers, silicon containing monomers, and chlorinated polymers.
摘要翻译：描述了干蚀刻以形成负抗蚀剂图案的工艺。主体聚合物与能够通过电磁辐射锁定就位的一种或多种单体混合并且作为膜沉积在基底上。然后选择性地照射该膜，然后通过加热或真空或两者固定，并通过氧等离子体进行蚀刻。未照射区域的去除率比照射区域高，产生负的抗蚀剂图案。可以加入敏化剂以允许使用各种辐射波长。讨论了单体和主体聚合物材料的期望性质，以及给出芳族单体，含硅单体和氯化聚合物的具体组合。

25. 发明授权

US5508144A Process for fabricating a device 失效
标题翻译：制造装置的方法
公开(公告)号：US5508144A
公开(公告)日：1996-04-16
申请号：US492875
申请日：1995-06-20
申请人： Howard E. Katz , Gary N. Taylor
发明人： Howard E. Katz , Gary N. Taylor
IPC分类号： G03F7/095 , G03F7/26
CPC分类号： G03F7/265 , G03F7/095 , Y10S430/143 , Y10S430/167 , Y10S430/168 , Y10S438/949 , Y10S438/95
摘要： The invention is directed to a process for fabricating an integrated circuit. An imaging layer is deposited on a substrate. The imaging layer is an energy sensitive resist material. The energy sensitive resist material contains moieties that preferentially bind to refractory material. A latent image of a pattern is introduced into the imaging layer by patternwise exposing the imaging layer to energy. The patternwise exposure introduces a selectivity into the resist material that is exploited to bind refractory material preferentially to either the exposed resist material or the unexposed resist material, but not both. The refractory material forms an etch mask over the resist material to which it preferentially binds. This etch mask is then used to transfer a pattern that corresponds to the latent image into the substrate.
摘要翻译：本发明涉及一种用于制造集成电路的方法。成像层沉积在基底上。成像层是能量敏感的抗蚀剂材料。能量敏感抗蚀剂材料含有优先结合耐火材料的部分。通过将成像层图案化地曝光成能量，将图案的潜像引入成像层。图案曝光引入抗蚀剂材料的选择性，其被利用以将耐火材料优先结合到暴露的抗蚀剂材料或未曝光的抗蚀剂材料，但不能两者。难熔材料在其优先结合的抗蚀剂材料上形成蚀刻掩模。然后使用该蚀刻掩模将对应于潜像的图案转印到基底中。

26. 发明授权

US5215867A Method with gas functionalized plasma developed layer 失效
标题翻译：方法用气体官能化等离子体显影层
公开(公告)号：US5215867A
公开(公告)日：1993-06-01
申请号：US54147
申请日：1987-05-15
申请人： Larry E. Stillwagon , Gary N. Taylor , Thirumalai N. C. Venkatesan , Thomas M. Wolf
发明人： Larry E. Stillwagon , Gary N. Taylor , Thirumalai N. C. Venkatesan , Thomas M. Wolf
IPC分类号： G03F7/26 , G03F7/36
CPC分类号： G03F7/265 , G03F7/36
摘要： A resist is formed by sorption of an inorganic-containing gas into an organic material. The development of the resist occurs by exposure to a plasma (e.g., oxygen reactive ion etching) that forms a protective compound (e.g., a metal oxide) selectively in the resist. The selected regions can be defined by patterning radiation of various types, including visible, ultraviolet, electron beam, and ion beam. In an alternate embodiment, the selected regions are defined by an overlying resist, with the gas sorption protecting the underlying layer in a bilevel resist. The protective compound can protect the organic resist layer during etching of an underlying inorganic layer, such as metal, silicide, oxide, nitride, etc.
摘要翻译：通过将含无机物的气体吸附到有机材料中形成抗蚀剂。通过暴露于在抗蚀剂中选择性形成保护化合物（例如，金属氧化物）的等离子体（例如，氧反应离子蚀刻），发生抗蚀剂的发展。所选择的区域可以通过图案化的各种类型的辐射来限定，包括可见光，紫外线，电子束和离子束。在替代实施例中，所选择的区域由覆盖的抗蚀剂限定，气体吸附保护双层抗蚀剂中的下层。保护性化合物可以在蚀刻下面的无机层（例如金属，硅化物，氧化物，氮化物等）时保护有机抗蚀剂层。

27. 发明授权

US4500628A Process of making solid state devices using silicon containing organometallic plasma developed resists 失效
标题翻译：使用含硅有机金属等离子体制造固态器件的工艺
公开(公告)号：US4500628A
公开(公告)日：1985-02-19
申请号：US507929
申请日：1983-06-27
申请人： Gary N. Taylor
发明人： Gary N. Taylor
IPC分类号： C07F7/08 , C07F7/18 , G03F7/075 , G03F7/36 , G03C5/00 , G03C5/24 , H05K3/00
CPC分类号： G03F7/36 , C07F7/0818 , C07F7/1864 , G03F7/0755 , Y10S148/137 , Y10S430/167 , Y10S430/168 , Y10S438/949
摘要： Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.
摘要翻译：通过干蚀刻抗蚀剂膜产生固态器件以产生负的抗蚀剂图案。该膜包含通常含有卤素的聚合物和至少一种含硅或非含硅的有机金属单体。辐射（通常是X射线辐射）将单体或单体锁定到聚合物中，随后的固定步骤去除抗蚀剂的未照射部分中的解锁的单体或单体。然后将膜暴露于包含氧的等离子体，其以比辐射部分更快的速率除去未照射部分，产生负的抗蚀剂图案。等离子体显影通常通过反应离子蚀刻来实现。敏化剂可用于延长膜的波长响应，通常进入紫外线或可见光区域。

28. 发明授权

US4396704A Solid state devices produced by organometallic plasma developed resists 失效
标题翻译：由有机金属等离子体制成的固态器件抗蚀剂
公开(公告)号：US4396704A
公开(公告)日：1983-08-02
申请号：US256604
申请日：1981-04-22
申请人： Gary N. Taylor
发明人： Gary N. Taylor
IPC分类号： C07F7/08 , C07F7/18 , C08F2/48 , C23F1/00 , C23F4/00 , G03F7/038 , G03F7/075 , G03F7/36 , H01L21/027 , G03C5/00 , G03C5/24 , H05K3/00
CPC分类号： G03F7/36 , C07F7/0818 , C07F7/1864 , G03F7/0755 , Y10S430/168
摘要： Solid state devices are produced by dry etching of a resist film to produce a negative resist pattern. The film comprises a polymer typically containing a halogen, and at least one type of silicon-containing or nonsilicon-containing organometallic monomer. The radiation, typically X-ray radiation, locks the monomer or monomers into the polymer, with a subsequent fixing step removing the unlocked monomer or monomers in the unirradiated portion of the resist. The film is then exposed to a plasma comprising oxygen, which removes the unirradiated portion at a faster rate than the radiated portion, producing a negative resist pattern. The plasma development is typically accomplished by reactive ion etching. Sensitizers can be used to extend the wavelength response of the films, typically into the ultraviolet or visible regions.
摘要翻译：通过干蚀刻抗蚀剂膜产生固态器件以产生负的抗蚀剂图案。该膜包含通常含有卤素的聚合物和至少一种含硅或非含硅的有机金属单体。辐射（通常是X射线辐射）将单体或单体锁定到聚合物中，随后的固定步骤去除抗蚀剂的未照射部分中的解锁的单体或单体。然后将膜暴露于包含氧的等离子体，其以比辐射部分更快的速率除去未照射部分，产生负的抗蚀剂图案。等离子体显影通常通过反应离子蚀刻来实现。敏化剂可用于延长膜的波长响应，通常进入紫外线或可见光区域。

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