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21. 发明申请

US20100317138A1 METHOD FOR FABRICATING MEMS STRUCTURE 有权
标题翻译：制造MEMS结构的方法
公开(公告)号：US20100317138A1
公开(公告)日：2010-12-16
申请号：US12849168
申请日：2010-08-03
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： H01L21/768
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A method for fabricating a MEMS is described as follows. A substrate is provided, including a circuit region and an MEMS region separated from each other. A first metal interconnection structure is formed on the substrate in the circuit region, and simultaneously a first dielectric structure is formed on the substrate in the MEMS region. A second metal interconnection structure is formed on the first metal interconnection structure, and simultaneously a second dielectric structure, at least two metal layers and at least one protection ring are formed on the first dielectric structure. The metal layers and the protection ring are formed in the second dielectric structure and the protection ring connects two adjacent metal layers to define an enclosed space between two adjacent metal layers. The first dielectric structure and the second dielectric structure outside the enclosed space are removed to form an MEMS device in the MEMS region.
摘要翻译： MEMS的制造方法如下所述。提供了包括彼此分离的电路区域和MEMS区域的衬底。第一金属互连结构形成在电路区域中的衬底上，并且同时在MEMS区域中的衬底上形成第一电介质结构。第二金属互连结构形成在第一金属互连结构上，并且同时具有第二电介质结构，至少两个金属层和至少一个保护环形成在第一电介质结构上。金属层和保护环形成在第二电介质结构中，并且保护环连接两个相邻的金属层以限定两个相邻金属层之间的封闭空间。除去封闭空间外的第一电介质结构和第二电介质结构，以在MEMS区域中形成MEMS器件。

22. 发明授权

US07851975B2 MEMS structure with metal protection rings 有权
标题翻译：具有金属保护环的MEMS结构
公开(公告)号：US07851975B2
公开(公告)日：2010-12-14
申请号：US12202563
申请日：2008-09-02
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： H01L41/08 , H01L27/20
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.
摘要翻译：描述了微机电系统（MEMS）结构及其制造方法。 MEMS结构包括固定部分和可动部分。固定部分设置在基板上并与基板连接。包括至少两个第一金属层，第一保护环和第一介电层的可移动部分悬挂在基板上。第一保护环连接两个相邻的第一金属层，以限定两个相邻的第一金属层之间的第一封闭空间。第一介电层设置在封闭空间中，并且连接两个相邻的第一金属层。

23. 发明申请

US20100052179A1 MEMS STRUCTURE AND METHOD FOR FABRICATING THE SAME 有权
标题翻译： MEMS结构及其制作方法
公开(公告)号：US20100052179A1
公开(公告)日：2010-03-04
申请号：US12202563
申请日：2008-09-02
申请人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
发明人： Bang-Chiang Lan , Ming-I Wang , Li-Hsun Ho , Hui-Min Wu , Min Chen , Chien-Hsin Huang , Tzung-I Su
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： B81C1/00246 , B81C2203/0714 , B81C2203/0742 , Y10T29/41 , Y10T29/49155
摘要： A microelectromechanical system (MEMS) structure and a fabricating method thereof are described. The MEMS structure includes a fixed part and a movable part. The fixed part is disposed on and connects with a substrate. The movable part including at least two first metal layers, a first protection ring and a first dielectric layer is suspended on the substrate. The first protection ring connects two adjacent first metal layers, so as to define a first enclosed space between the two adjacent first metal layers. The first dielectric layer is disposed in the enclosed space and connects the two adjacent first metal layers.
摘要翻译：描述了微机电系统（MEMS）结构及其制造方法。 MEMS结构包括固定部分和可动部分。固定部分设置在基板上并与基板连接。包括至少两个第一金属层，第一保护环和第一介电层的可移动部分悬挂在基板上。第一保护环连接两个相邻的第一金属层，以限定两个相邻的第一金属层之间的第一封闭空间。第一介电层设置在封闭空间中，并且连接两个相邻的第一金属层。

24. 发明申请

US20090243004A1 Integrated structure for MEMS device and semiconductor device and method of fabricating the same 有权
标题翻译： MEMS器件和半导体器件的集成结构及其制造方法
公开(公告)号：US20090243004A1
公开(公告)日：2009-10-01
申请号：US12056286
申请日：2008-03-27
申请人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
发明人： Bang-Chiang Lan , Li-Hsun Ho , Wei-Cheng Wu , Hui-Min Wu , Min Chen , Tzung-I Su , Chien-Hsin Huang
IPC分类号： H01L29/84 , H01L21/00
CPC分类号： B81C1/00246 , B81C1/00801 , B81C2201/014 , B81C2203/0714 , B81C2203/0742 , B81C2203/0792 , H01L27/0688
摘要： The present invention relates to an integrated structure for a MEMS device and a semiconductor device and a method of fabricating the same, in which an etch stopping device is included on a substrate between the MEMS device and the semiconductor device for protecting the semiconductor device from lateral damage when an oxide releasing process is performed to fabricate the MEMS device. The etch stopping device has various profiles and is selectively formed by an individual fabricating process or is simultaneously formed with the semiconductor device in the same fabricating process. It is a singular structure or a combined stacked multilayered structure, for example, a plurality of rows of pillared etch-resistant material plugs, one or a plurality of wall-shaped etch-resistant material plugs, or a multilayered structure of a stack of which and an etch-resistant material layer.
摘要翻译：本发明涉及用于MEMS器件和半导体器件的集成结构及其制造方法，其中在MEMS器件和半导体器件之间的衬底上包括蚀刻停止器件，用于保护半导体器件免受横向执行氧化物释放处理以制造MEMS器件时的损坏。蚀刻停止装置具有各种形状，并且通过单独的制造工艺选择性地形成，或者在相同的制造工艺中与半导体器件同时形成。它是单一结构或组合堆叠的多层结构，例如多排支撑的耐蚀刻材料插塞，一个或多个壁状耐蚀刻材料插塞或其堆叠的多层结构和耐蚀刻材料层。

25. 发明授权

US07589593B2 Amplifier circuit having stacked main amplifier and parallel sub-amplifier 有权
标题翻译：具有堆叠主放大器和并联子放大器的放大器电路
公开(公告)号：US07589593B2
公开(公告)日：2009-09-15
申请号：US12022159
申请日：2008-01-30
申请人： Jie-Wei Lai , Min Chen
发明人： Jie-Wei Lai , Min Chen
IPC分类号： H03F3/04 , H03F1/22
CPC分类号： H03F1/223 , H03F1/26 , H03F1/3205 , H03F3/211 , H03F2200/294
摘要： An amplifier circuit for amplifying an input signal to generate an output signal is provided. The amplifier circuit has a stacked main amplifier, a parallel sub-amplifier, and a signal combiner. The stacked main amplifier includes a first amplifier unit for outputting a first amplified signal generated from processing the input signal; and a second amplifier unit for outputting a second amplified signal generated from processing the first amplified signal. The first amplifier unit and the second amplifier unit share bias current. The parallel sub-amplifier is coupled to the stacked main amplifier according to a parallel connection fashion, and outputs a third amplified signal generated from processing the input signal. The signal combiner combines the second amplified signal and the third amplified signal to generate the output signal.
摘要翻译：提供了用于放大输入信号以产生输出信号的放大器电路。放大器电路具有堆叠的主放大器，并联子放大器和信号组合器。堆叠的主放大器包括：第一放大器单元，用于输出从处理输入信号产生的第一放大信号; 以及第二放大器单元，用于输出从处理第一放大信号产生的第二放大信号。第一放大器单元和第二放大器单元共享偏置电流。并联子放大器根据并联连接方式耦合到堆叠的主放大器，并且输出从处理输入信号产生的第三放大信号。信号组合器组合第二放大信号和第三放大信号以产生输出信号。

26. 发明授权

US07502192B1 Magnetic disk drive and method for efficiently determining and storing RRO compensation values using a secondary micro-actuator 失效
标题翻译：磁盘驱动器和用于使用次级微致动器有效地确定和存储RRO补偿值的方法
公开(公告)号：US07502192B1
公开(公告)日：2009-03-10
申请号：US11484492
申请日：2006-07-11
申请人： Zhi Wang , Min Chen , Robert J. McNab , Jenghung Cheng
发明人： Zhi Wang , Min Chen , Robert J. McNab , Jenghung Cheng
IPC分类号： G11B21/02 , G11B5/596
CPC分类号： G11B5/59627
摘要： A method is disclosed for efficiently determining and writing repeatable runout (RRO) compensation value sets for data tracks on a magnetic disk in a disk drive. The disk drive has a magnetoresistive (MR) head having a read element and a separate write element, and a secondary actuator coupled to the end of a primary actuator for adjusting a head skew angle. In the method, the head skew angle is set such that the read and write elements are substantially aligned along the first track. A position error signal for each servo sector is determined over a predetermined number of disk revolutions during track following along a first data track. An RRO compensation value set is calculated for the first data track based on the position error signals. The RRO compensation value set is written for the first data track. A seek operation is then performed to a second data track.
摘要翻译：公开了一种用于有效地确定和写入磁盘驱动器中的磁盘上的数据轨迹的可重复跳动（RRO）补偿值集合的方法。磁盘驱动器具有磁阻（MR）磁头，其具有读取元件和单独的写入元件，以及耦合到主致动器的端部用于调整磁头倾斜角度的次级致动器。在该方法中，头部偏斜角被设置为使得读取和写入元件沿着第一轨道基本对齐。在沿着第一数据轨道的跟踪期间，在预定数量的盘转周期上确定每个伺服扇区的位置误差信号。基于位置误差信号计算第一数据磁道的RRO补偿值集。为第一个数据轨道写入RRO补偿值集。然后对第二数据轨道执行寻道操作。

27. 发明申请

US20080279754A1 Induced electrical property changes in single walled carbon nanotubes by electromagnetic radiation 审中-公开
标题翻译：通过电磁辐射诱导单壁碳纳米管的电性能变化
公开(公告)号：US20080279754A1
公开(公告)日：2008-11-13
申请号：US11712686
申请日：2007-03-01
申请人： David Allara , Min Chen , Don Henley , Timothy James Imholt , James Andrew Roberts
发明人： David Allara , Min Chen , Don Henley , Timothy James Imholt , James Andrew Roberts
IPC分类号： D01F9/12
CPC分类号： B82Y30/00 , B01J19/126 , B01J2219/1269 , B82Y10/00 , B82Y40/00 , C01B32/168 , C01B2202/02 , C01B2202/22 , D01F9/12 , H01L51/0048 , H01L51/0052 , H01L51/428
摘要： In the apparatus and process of the present invention, it is possible to fabricate CNTs with specific diameters and morphologies. The morphology selection can yield samples of pre-selected diameter configurations making it possible to take a sample of SWNTs produced by any synthesis technique and induce a morphology change that causes the sample to be either all conductive, all narrow band gap semiconductive or wide band gap semiconductive, within a given nanotube rope.
摘要翻译：在本发明的装置和方法中，可以制造具有特定直径和形态的CNT。形态选择可以产生预先选择的直径结构的样品，使得可以取出通过任何合成技术产生的SWNT样品，并诱导形态学变化，使样品全部导电，全窄带隙半导体或宽带隙在一个给定的纳米管绳内。

28. 发明授权

US07440225B1 Disk drive employing pivot friction compensation 失效
标题翻译：磁盘驱动器采用枢轴摩擦补偿
公开(公告)号：US07440225B1
公开(公告)日：2008-10-21
申请号：US11507234
申请日：2006-08-21
申请人： Min Chen , Zhi Wang
发明人： Min Chen , Zhi Wang
IPC分类号： G11B5/596
CPC分类号： G11B5/59627
摘要： A disk drive is disclosed including a disk having a plurality of servo tracks, wherein each servo track comprises a plurality of servo sectors forming N servo wedges, and a wedge time period (WTP) occurs between each servo wedge. A VCM control signal is generated by generating an estimated WTP by detecting the servo sectors, estimating a pivot velocity in response to the estimated WTP, the pivot velocity representing a velocity of an actuator arm about a pivot, generating a pivot friction compensation in response to the estimated pivot velocity, and generating the VCM control signal in response to the pivot friction compensation.
摘要翻译：公开了一种磁盘驱动器，包括具有多个伺服磁道的磁盘，其中每个伺服磁道包括形成N个伺服楔形的多个伺服扇区，并且在每个伺服楔之间发生楔形时间段（WTP）。通过产生估计的WTP来产生VCM控制信号，通过检测伺服扇区，响应于所估计的WTP估计枢转速度，枢转速度表示致动器臂围绕枢轴的速度，产生响应于估计枢转速度，并响应于枢轴摩擦补偿产生VCM控制信号。

29. 发明申请

US20070115631A1 Electronic device with audio capability 有权
标题翻译：具有音频功能的电子设备
公开(公告)号：US20070115631A1
公开(公告)日：2007-05-24
申请号：US11286488
申请日：2005-11-23
申请人： Min Chen
发明人： Min Chen
IPC分类号： H05K7/20
CPC分类号： G06F1/1688 , G06F1/1616
摘要： A notebook computer with audio capability. A host pivots a monitor and includes a top casing and a bottom casing opposite thereto. A speaker module is disposed on the top casing and includes at least one first ventilator. A printed circuit board is disposed between the top casing and the bottom casing and includes at least one second ventilator corresponding to the first ventilator.
摘要翻译：具有音频功能的笔记本电脑。主机枢转监视器并且包括顶部壳体和与其相对的底部壳体。扬声器模块设置在顶部壳体上并且包括至少一个第一呼吸机。印刷电路板设置在顶部壳体和底部壳体之间，并且包括对应于第一呼吸机的至少一个第二呼吸机。

30. 外观设计

USD993564S1 Faucet splash pad 有权
公开(公告)号：USD993564S1
公开(公告)日：2023-07-25
申请号：US29836110
申请日：2022-04-25
申请人： Min Chen
设计人： Min Chen
摘要： FIG. 1 is a front perspective view of a faucet splash pad, showing my new design;
FIG. 2 is a front view thereof;
FIG. 3 is a rear view thereof;
FIG. 4 is a left side view thereof;
FIG. 5 is a right side view thereof;
FIG. 6 is a top view thereof; and,
FIG. 7 is a bottom view thereof.

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