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21. 发明授权

US07281316B2 Perpendicular pole structure and method of fabricating the same 失效
标题翻译：垂直极结构及其制造方法
公开(公告)号：US07281316B2
公开(公告)日：2007-10-16
申请号：US10883336
申请日：2004-06-30
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/187 , B44C1/22
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

22. 发明授权

US08037593B2 Method for manufacturing an ultra narrow gap magnetoresistive sensor 有权
标题翻译：制造超窄间隙磁阻传感器的方法
公开(公告)号：US08037593B2
公开(公告)日：2011-10-18
申请号：US11966106
申请日：2007-12-28
申请人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
发明人： Kuok San Ho , Ying Hong , Wipul Pemsiri Jayasekara , Daniele Mauri
IPC分类号： G11B5/127 , H04R31/00
CPC分类号： G11B5/3163 , B82Y25/00 , G01R33/093 , G11B5/398 , Y10T29/49021 , Y10T29/49032 , Y10T29/49039 , Y10T29/49043 , Y10T29/49044
摘要： A method for manufacturing a magnetoresistive sensor that decreases the stack height of the sensor. The method includes forming a sensor structure having at its top, a Ru layer and a Ta layer over the Ru layer. An annealing process is performed to set the magnetization of the pinned layer of the sensor structure. After the annealing process has been completed and the Ta layer is no longer needed, an ion milling process is performed to remove the Ta layer.
摘要翻译：一种降低传感器堆叠高度的磁阻传感器的制造方法。该方法包括形成传感器结构，其顶部具有在Ru层上的Ru层和Ta层。执行退火处理以设置传感器结构的钉扎层的磁化。在完成退火处理并且不再需要Ta层之后，执行离子铣削处理以去除Ta层。

23. 发明授权

US07881018B2 Differential current perpendicular to plane giant magnetoresistive sensor structure having improved robustness against spin torque noise 有权
标题翻译：差分电流垂直于平面巨磁阻传感器结构，具有改进的抗旋转扭矩噪声的鲁棒性
公开(公告)号：US07881018B2
公开(公告)日：2011-02-01
申请号：US11850570
申请日：2007-09-05
申请人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
发明人： Hardayal Singh Gill , Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3903 , G11B5/398 , H01F10/3254 , H01F10/3272 , H01F10/3286
摘要： A differential giant magnetoresistive sensor for sensing a magnetic signal. The differential sensor has a structure configured to minimize spin torque noise. The differential magnetoresistive sensor includes first and second magnetoresistive sensor elements and a three lead structure including an inner lead sandwiched between the first and second sensor elements and first and second outer leads. each of the sensor elements includes an antiparallel coupled free layer structure with the free layer of each of the sensor elements preferably being positioned near the inner lead. The three lead structure allows sense current to be supplied to the sensor such that electrons travel first through the free layer of each sensor element and then through the pinned layer structure.
摘要翻译：用于感测磁信号的差分巨磁阻传感器。微分传感器具有使旋转扭矩噪声最小化的结构。差动磁阻传感器包括第一和第二磁阻传感器元件和三引线结构，其包括夹在第一和第二传感器元件与第一和第二外引线之间的内引线。每个传感器元件包括反平行耦合的自由层结构，每个传感器元件的自由层优选地定位在内引线附近。三个引线结构允许感测电流被提供给传感器，使得电子首先通过每个传感器元件的自由层，然后穿过被钉扎层结构。

24. 发明授权

US07881011B2 Perpendicular pole structure and method of fabricating the same 有权
标题翻译：垂直极结构及其制造方法
公开(公告)号：US07881011B2
公开(公告)日：2011-02-01
申请号：US11836732
申请日：2007-08-09
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Jeffrey S. Lille
IPC分类号： G11B5/187 , G11B5/127
CPC分类号： G11B5/1278 , G11B5/3116 , G11B5/3163 , Y10T29/49021 , Y10T29/49032 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T428/11 , Y10T428/1157
摘要： A magnetic structure, such as a pole tip, and method for forming the same includes forming a pole tip layer of magnetic material. A layer of polyimide precursor material is added above the pole tip layer and cured. A silicon-containing resist layer is added above the layer of polyimide precursor material and patterned. The resist layer is exposed to oxygen plasma for converting the resist into a glass-like material. Exposed portions of the cured polyimide precursor material are removed for exposing portions of the pole tip layer. The exposed portions of the pole tip layer are removed for forming a pole tip. Chemical mechanical polishing (CMP) can then be performed to remove any unwanted material remaining above the pole tip.
摘要翻译：诸如极尖的磁性结构及其形成方法包括形成磁性材料的磁极末端层。将一层聚酰亚胺前体材料添加到极尖层上方并固化。将含硅抗蚀剂层添加到聚酰亚胺前体材料层上方并图案化。将抗蚀剂层暴露于氧等离子体以将抗蚀剂转化为玻璃状材料。去除固化的聚酰亚胺前体材料的暴露部分以暴露极尖层的部分。去除极尖端部的暴露部分以形成极尖。然后可以进行化学机械抛光（CMP）以除去残留在极尖顶部的任何不需要的材料。

25. 发明授权

US07839606B2 Magnetic head having oxidized read sensor edges to reduce sensor current shunting 有权
标题翻译：磁头具有氧化的读取传感器边缘，以减少传感器电流分流
公开(公告)号：US07839606B2
公开(公告)日：2010-11-23
申请号：US11449913
申请日：2006-06-09
申请人： Wipul Pemsiri Jayasekara
发明人： Wipul Pemsiri Jayasekara
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/3929 , G11B5/398
摘要： A magnetic read head of either CIP or CPP configuration is disclosed having a read sensor having oxidized non-conductive regions. The read sensor has a front edge, a rear edge, a left-side edge and a right-side edge. For a CIP configuration, the front edge and the rear edge are oxidized to form non-conductive regions. For a CPP configuration, the left-side edge, the right-side edge, the front edge and the rear edge are oxidized to form non-conductive regions. Also disclosed are a disk drive including a read sensor having oxidized non-conductive regions, and a method of fabrication for a read sensor having oxidized non-conductive regions.
摘要翻译：公开了具有具有氧化的非导电区域的读取传感器的CIP或CPP配置的磁读头。读取传感器具有前边缘，后边缘，左侧边缘和右侧边缘。对于CIP配置，前边缘和后边缘被氧化以形成非导电区域。对于CPP配置，左侧边缘，右侧边缘，前边缘和后边缘被氧化以形成非导电区域。还公开了一种包括具有氧化的非导电区域的读取传感器的磁盘驱动器，以及用于具有氧化非导电区域的读取传感器的制造方法。

26. 发明授权

US07773349B2 Tunnel MR head with long stripe height sensor stabilized through the shield 有权
标题翻译：隧道MR头，长条纹高度传感器通过屏蔽稳定
公开(公告)号：US07773349B2
公开(公告)日：2010-08-10
申请号：US11352491
申请日：2006-02-10
申请人： Robert Stanley Beach , Wipul Pemsiri Jayasekara , Vladimir Nikitin
发明人： Robert Stanley Beach , Wipul Pemsiri Jayasekara , Vladimir Nikitin
IPC分类号： G11B5/39 , G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3912 , G11B5/40
摘要： In a CPP MR device such as a tunnel magnetoresistive (TMR) device, shoulders that have a magnetic moment that is matched to the magnetic moments of the free layer extend between the free layer and the S2 shield to provide an electrical path from one shoulder, through the shield, to the other shoulder for dissipating edge charges. Thus, a CPP MR device may include a seed stack, a pinned stack on the seed stack, and a tunnel barrier on the pinned stack. A free stack may be on the tunnel barrier, and the free stack can include a free sublayer separated from a magnetic shield and a path for dissipating edge charges in the free stack through the magnetic shield.
摘要翻译：在诸如隧道磁阻（TMR）器件的CPP MR器件中，具有与自由层的磁矩匹配的磁矩的肩部在自由层和S2屏蔽之间延伸以提供来自一个肩部的电路径，通过屏蔽，到另一个肩膀消散边缘电荷。因此，CPP MR装置可以包括种子堆叠，种子堆叠上的钉扎堆叠以及钉扎堆叠上的隧道势垒。自由堆叠可以在隧道屏障上，并且自由堆叠可以包括与磁屏蔽分离的自由子层和用于通过磁屏蔽消散自由堆叠中的边缘电荷的路径。

27. 发明授权

US07627942B2 Method for using CVD process to encapsulate coil in a magnetic write head 失效
标题翻译：使用CVD工艺将线圈封装在磁写头中的方法
公开(公告)号：US07627942B2
公开(公告)日：2009-12-08
申请号：US11090457
申请日：2005-03-25
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Howard Gordon Zolla
IPC分类号： G11B5/17
CPC分类号： G11B5/3133 , G11B5/17 , G11B5/3136 , G11B5/3163 , Y10T29/49041 , Y10T29/4906 , Y10T29/49064
摘要： A method for fabricating a magnetic write head with a coil with a high aspect ratio using a Chemical Vapor Deposition process such as Atomic Layer Deposition (ALD), High Speed ALD, Plasma Enhanced ALD (PEALD), Plasma Enhanced Chemical Vapor Deposition (PECVD) or Low Pressure Chemical Vapor Deposition (LPCVD) to form encapsulating films over the coils without voids is disclosed. Materials which can be used for encapsulation include Al2O3, SiO2, AlN, Ta2O5, HfO2, ZrO2, and YtO3. The use of an ultra-conformal deposition process allows the pitch of the coils to be smaller than it is possible in the prior art. The method also allows materials with a smaller coefficient of thermal expansion than hardbake photoresist to be used with resulting improvements in thermal protrusion characteristics.
摘要翻译：使用诸如原子层沉积（ALD），高速ALD，等离子体增强ALD（PEALD），等离子体增强化学气相沉积（PECVD）等化学气相沉积工艺制造具有高纵横比的线圈的磁写头的方法，或低压化学气相沉积（LPCVD）以在无空隙的线圈上形成封装膜。可用于封装的材料包括Al2O3，SiO2，AlN，Ta2O5，HfO2，ZrO2和YtO3。使用超适形沉积工艺允许线圈的间距小于现有技术中可能的间距。该方法还允许使用具有比硬质光刻胶更小的热膨胀系数的材料，从而提高热突起特性。

28. 发明授权

US07562436B2 Deposition defined trackwidth for very narrow trackwidth CPP device 失效
标题翻译：存储为非常窄的轨道CPP设备定义的轨道宽度
公开(公告)号：US07562436B2
公开(公告)日：2009-07-21
申请号：US11192558
申请日：2005-07-29
申请人： Wipul Pemsiri Jayasekara
发明人： Wipul Pemsiri Jayasekara
IPC分类号： G11B5/127 , G11B5/33 , H04R31/00 , H05K3/02
CPC分类号： G01R33/093 , B82Y25/00 , G11B5/398 , Y10T29/49041 , Y10T29/49043 , Y10T29/49046 , Y10T29/49048 , Y10T29/49052 , Y10T29/49156
摘要： In one embodiment, a method of forming a CPP sensor comprises providing a sensor having a hard mask disposed on a left side thereof and a right side with a portion of the sensor material removed therefrom, the hard mask having a vertical surface; forming a right dielectric layer including a vertical surface disposed adjacent the vertical surface of the hard mask; forming a right hard bias layer or right side shields on the right dielectric layer; removing the hard mask to expose the left side of the sensor; forming an electrically conductive layer on the sensor, the electrically conductive layer including a vertical electrically conductive portion disposed adjacent the vertical surface of the right dielectric layer; removing the electrically conductive layer except the vertical electrically conductive portion; removing a portion of the sensor material from the left side of the sensor; forming a left dielectric layer on the left side of the sensor, the left dielectric layer including a vertical surface disposed adjacent the vertical electrically conductive portion; and forming a left hard bias layer or left side shields on the left dielectric layer.
摘要翻译：在一个实施例中，形成CPP传感器的方法包括提供具有设置在其左侧的硬掩模的传感器和从传感器材料的一部分移除的右侧的传感器，所述硬掩模具有垂直表面; 形成包括邻近所述硬掩模的垂直表面设置的垂直表面的右电介质层; 在右电介质层上形成右硬偏压层或右侧屏蔽; 去除硬掩模以暴露传感器的左侧; 在所述传感器上形成导电层，所述导电层包括邻近所述右电介质层的垂直表面设置的垂直导电部分; 除去除了垂直导电部分之外的导电层; 从传感器的左侧去除传感器材料的一部分; 在传感器的左侧形成左电介质层，所述左电介质层包括邻近所述垂直导电部分设置的垂直表面; 并在左电介质层上形成左硬偏置层或左侧屏蔽。

29. 发明授权

US07295401B2 Laminated side shield for perpendicular write head for improved performance 有权
标题翻译：用于垂直写头的层压侧屏蔽，以提高性能
公开(公告)号：US07295401B2
公开(公告)日：2007-11-13
申请号：US10975283
申请日：2004-10-27
申请人： Wipul Pemsiri Jayasekara , Hardayal Singh Gill
发明人： Wipul Pemsiri Jayasekara , Hardayal Singh Gill
IPC分类号： G11B5/11 , G11B5/147
CPC分类号： G11B5/315 , G11B5/1278 , G11B5/3116 , G11B5/3146
摘要： A perpendicular write head is disclosed for writing information onto tracks. The write head includes a top pole and a return pole and side shields with laminated layers wherein said laminated layers have magnetization in a direction parallel to an air bearing surface (ABS) and perpendicular to the tracks.
摘要翻译：公开了用于将信息写入轨道的垂直写头。写头包括顶极和返回极和具有层压层的侧屏蔽，其中所述层压层在平行于空气轴承表面（ABS）并且垂直于轨道的方向上具有磁化。

30. 发明授权

US06919280B2 Method of removing magnetoresistive sensor cap by reactive ion etching 失效
标题翻译：通过反应离子蚀刻去除磁阻传感器盖的方法
公开(公告)号：US06919280B2
公开(公告)日：2005-07-19
申请号：US10271804
申请日：2002-10-15
申请人： Richard Hsiao , Wipul Pemsiri Jayasekara , Son Van Nguyen , Sue Zhang
发明人： Richard Hsiao , Wipul Pemsiri Jayasekara , Son Van Nguyen , Sue Zhang
IPC分类号： C23F4/00 , G11B5/31 , G11B5/39 , H01F41/30 , H01L43/08 , H01L43/12 , H01L21/302 , H01L21/461
CPC分类号： B82Y25/00 , B82Y10/00 , C23F4/00 , G11B5/3163 , G11B5/3903 , G11B2005/3996 , H01F41/302
摘要： During manufacture, a magnetoresistive sensor having a ferromagnetic free layer is commonly provided with a tantalum cap layer. The tantalum cap layer provides protection to the sensor during manufacture and then is typically removed after performing annealing. The removal of the tantalum cap with a fluorine reactive ion etch leaves low volatility tantalum/fluorine byproducts. The present invention provides a method of using an argon/hydrogen reactive ion etch to remove the tantalum/fluorine byproducts. The resulting sensor has far less damage resulting from the presence of the fluorine byproducts.
摘要翻译：在制造期间，具有铁磁性自由层的磁阻传感器通常设置有钽帽层。钽帽层在制造过程中为传感器提供保护，然后在退火之后通常被去除。用氟反应离子蚀刻去除钽帽留下低挥发性钽/氟副产物。本发明提供了一种使用氩/氢反应离子蚀刻去除钽/氟副产物的方法。所得到的传感器具有由于氟副产物的存在而造成的损害少得多。

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