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21. 发明授权

US07855790B2 Dimension measuring apparatus 有权
标题翻译：尺寸测量仪器
公开(公告)号：US07855790B2
公开(公告)日：2010-12-21
申请号：US12389288
申请日：2009-02-19
申请人： Norihiko Nishizawa , Masatoshi Arai , Tomohiro Aoto
发明人： Norihiko Nishizawa , Masatoshi Arai , Tomohiro Aoto
IPC分类号： G01B11/02
CPC分类号： G01B11/0608 , G01B9/0209 , G01B11/2441 , G01B2290/35
摘要： A dimension measuring apparatus includes a light beam splitting element for splitting light emitted from a white light source into measuring light flux and reference light flux, a reference light scanning optics for varying optical path length of the reference light flux, a detector for detecting interference signal produced by the light fluxes, and a controller for determining the surface height of the object from the optical path length of the reference light flux corresponding to maximum value of the interference signal. The reference light scanning optics includes a rotary member, first and second reflective elements disposed to be symmetrical with respect to the rotation axis of the rotary member, and light beam deflecting members that direct the reference light flux to be incident on the first reflective element along the direction parallel and opposite to the incident direction of the reference light flux on the second reflective element.
摘要翻译：尺寸测量装置包括用于将从白光源发射的光分解为测量光通量和参考光通量的光束分离元件，用于改变参考光通量的光程长度的参考光扫描光学器件，用于检测干涉信号的检测器由光束产生的控制器，以及控制器，用于根据与干扰信号的最大值相对应的参考光通量的光路长度确定物体的表面高度。参考光扫描光学器件包括旋转构件，设置成相对于旋转构件的旋转轴线对称设置的第一和第二反射元件以及引导参考光束入射在第一反射元件上的光束偏转构件与第二反射元件上的参考光通量的入射方向平行且相反的方向。

22. 发明授权

US07741423B2 Highly oxygen permeable polymer 有权
标题翻译：高透氧性聚合物
公开(公告)号：US07741423B2
公开(公告)日：2010-06-22
申请号：US11785691
申请日：2007-04-19
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： C08F30/08 , C08F130/08
CPC分类号： C08G61/08 , C08F230/08 , C08F232/08
摘要： A polymer having a number average molecular weight (Mn) of from 10,000 to 5,000,000, as determined by gel permeation chromatography and reduced to polystyrene, and repeating units represented by the following formula (1): wherein R1 and R2 may be the same with or different from each other and are substituted or unsubstituted alkyl groups having 1 to 12 carbon atoms, a is a number of 0, 1, 2 or a mixture thereof, and b is a number of 0, 1, 2 or a mixture thereof.
摘要翻译：通过凝胶渗透色谱法测定的数均分子量（Mn）为10,000〜5,000,000的聚合物，还原为聚苯乙烯，以及由下式（1）表示的重复单元：其中R1和R2可以与彼此不同，为具有1至12个碳原子的取代或未取代的烷基，a为0,1,2或其混合物，b为0,1,2或其混合物。

23. 发明授权

US07280037B2 Alarm display system for vehicles 失效
标题翻译：车辆报警显示系统
公开(公告)号：US07280037B2
公开(公告)日：2007-10-09
申请号：US11221969
申请日：2005-09-09
申请人： Masatoshi Arai
发明人： Masatoshi Arai
IPC分类号： B60Q1/00 , G08G1/123
CPC分类号： B60K37/02
摘要： A display has a panel display unit with plural display screen portions arranged along a longitudinal direction of a vehicle body and providing an alarm display on a screen, a multistage display unit with reflecting mirrors inclined with respect to the screen portions and arranged at intervals along the longitudinal direction so as to respectively correspond with the screen portions and reflect the alarm display, and an alarm-distance obtaining unit for obtaining an alarm-distance between a present vehicle-position and an alarm-object position. The reflecting mirrors includes a most-rear reflecting mirror and at least one front reflecting mirror through which the alarm display can be seen. A multistage display control unit controls the display unit such that the alarm display is linked to the alarm-distance and provided in display-screen-portion order thereon so as to obtain a deep multistage alarm display.
摘要翻译：显示器具有面板显示单元，具有沿着车身的长度方向布置的多个显示屏部分，并且在屏幕上提供报警显示;多台显示单元，其具有相对于屏幕部分倾斜的反射镜并沿着纵向方向分别对应于屏幕部分并反映报警显示;以及报警距离获取单元，用于获得当前车辆位置与报警对象位置之间的报警距离。反射镜包括最后反射镜和至少一个前反射镜，通过该反射镜可以看到报警显示。多级显示控制单元控制显示单元，使得报警显示与报警距离相关联并以其显示屏部分顺序提供，以获得深层多级报警显示。

24. 发明申请

US20060086971A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20060086971A1
公开(公告)日：2006-04-27
申请号：US11152114
申请日：2005-06-15
申请人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
发明人： Nobuyoshi Takahashi , Satoshi Iwamoto , Fumihiko Noro , Masatoshi Arai
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11568 , H01L21/823878 , H01L27/105 , H01L27/1052 , H01L27/11573 , H01L29/792 , Y10S438/954
摘要： A semiconductor device includes a memory section formed at a semiconductor substrate and including a first transistor having an ONO film that can store charges between the semiconductor substrate and a memory electrode and a first STI region for isolating the first transistor, and a CMOS section formed at the semiconductor substrate and including a second transistor having a CMOS electrode and a gate dielectric and a second STI region for isolating the second transistor. The height of the top surface of the first STI region is set equal to or smaller than the height of the top surface of the second STI region.
摘要翻译：一种半导体器件包括形成在半导体衬底上的存储器部分，并且包括具有可存储半导体衬底和存储电极之间的电荷的ONO膜的第一晶体管和用于隔离第一晶体管的第一STI区域和形成在半导体衬底并且包括具有CMOS电极和栅极电介质的第二晶体管和用于隔离第二晶体管的第二STI区域。第一STI区域的顶表面的高度被设定为等于或小于第二STI区域的顶表面的高度。

25. 发明申请

US20060017121A1 Nonvolatile semiconductor memory device and method for fabricating the same 有权
公开(公告)号：US20060017121A1
公开(公告)日：2006-01-26
申请号：US11123169
申请日：2005-05-06
申请人： Masatoshi Arai , Keita Takahashi
发明人： Masatoshi Arai , Keita Takahashi
IPC分类号： H01L29/94 , H01L21/8238
CPC分类号： H01L21/28282 , H01L27/11568 , H01L29/66833 , H01L29/7923
摘要： A nonvolatile semiconductor memory device includes: a gate dielectric made of a multilayer dielectric that is formed on a substrate and discretely accumulates charges; a gate electrode formed on the gate dielectric; a pair of diffusion regions formed in the surface of the substrate with the gate electrode interposed therebetween and serving as a source and a drain; and a channel region existing between the diffusion regions. At least one of regions of the gate dielectric located between the pair of diffusion regions and lateral end parts of the gate electrode opposed to the diffusion regions includes a fixed charge accumulation region in which charges produced by irradiating the gate electrode with ultraviolet light can be accumulated, and at least one said diffusion region located below the fixed charge accumulation region is formed to overlap with the fixed charge accumulation region in plan configuration and extend beyond the fixed charge accumulation region toward the middle of the channel region in plan configuration.

26. 发明授权

US06552152B2 Curable fluoropolyether rubber compositions 有权
公开(公告)号：US06552152B2
公开(公告)日：2003-04-22
申请号：US09893603
申请日：2001-06-29
申请人： Yasunori Sakano , Shinichi Sato , Koichi Yamaguchi , Noriyuki Koike , Masatoshi Arai , Hirofumi Kishita
发明人： Yasunori Sakano , Shinichi Sato , Koichi Yamaguchi , Noriyuki Koike , Masatoshi Arai , Hirofumi Kishita
IPC分类号： C08G7712
CPC分类号： C08G65/336 , C08G65/007
摘要： A curable fluoropolyether rubber composition comprising (A) a straight-chain fluoropolyether compound having at least two alkenyl groups and a perfluoropolyether structure backbone, (B) an organosilicon compound having at least two silicon atom-bonded hydrogen atoms, which all form H—SiCH2— structures, and (C) a hydrosilylation catalyst cures into parts which have good heat resistance, chemical resistance, solvent resistance, parting property, water repellency, oil repellency and weather resistance as well as improved acid and alkali resistance and are useful as sealants.

27. 发明授权

US06414062B1 Fluorinated curable compositions 有权
标题翻译：氟化可固化组合物
公开(公告)号：US06414062B1
公开(公告)日：2002-07-02
申请号：US09654609
申请日：2000-09-01
申请人： Kenichi Fukuda , Hiromasa Yamaguchi , Masatoshi Arai
发明人： Kenichi Fukuda , Hiromasa Yamaguchi , Masatoshi Arai
IPC分类号： C08K55419
CPC分类号： C08G77/50 , C08L83/08 , C08L83/00 , C08L2666/28
摘要： A fluorinated curable composition contains as main components, (A) a linear polyfluoro compound of the formula (1): CH2═CH—(X)a—Rf1—(X)a—CH═CH2 (1) wherein X is —CH2—, —CH2O—, etc., Rf1 is a divalent perfluoroalkylene or perfluorooxyalkylene group, and “a” is 0 or 1, (B) a linear polyfluoro compound of the formula (2): Rf2—(X)a—CH═CH2 (2) wherein X and “a” are as defined above, and Rf2 is a monovalent perfluoroalkyl or perfluorooxyalkyl group, (C) an organosilicon compound having at least two hydrosilyl groups, (D) a platinum group catalyst, and (E) a fluorinated organopolysiloxane. The composition is vacuum deaeratable and foam breakable, cures into a gel having improved chemical and solvent resistance, and is suited for the potting, sealing and coating of electric and electronic parts.
摘要翻译：氟化固化性组合物含有作为主要成分的（A）式（1）的直链状多氟化合物：其中，X为-CH 2 - ， - CH 2 O-等，Rf 1为二价全氟亚烷基或全氟亚氧烷基，“a” 是（0）或（1），（B）式（2）的线性多氟化合物：其中X和“a”如上所定义，R f2是一价全氟烷基或全氟氧烷基，（C）有机硅化合物，氢化硅烷基，（D）铂族催化剂和（E）氟化有机聚硅氧烷。该组合物是真空脱气和泡沫破坏的，固化成具有改善的耐化学性和耐溶剂性的凝胶，并且适用于电气和电子部件的灌封，密封和涂覆。

28. 发明授权

US6160074A Fluorine-containing curable compositions 失效
标题翻译：含氟可固化组合物
公开(公告)号：US6160074A
公开(公告)日：2000-12-12
申请号：US984188
申请日：1997-12-03
申请人： Takashi Matsuda , Shinichi Sato , Masatoshi Arai , Hirofumi Kishita
发明人： Takashi Matsuda , Shinichi Sato , Masatoshi Arai , Hirofumi Kishita
IPC分类号： C08G65/00 , C08G65/336 , C08G77/24 , C08G77/48 , C08L71/00 , C08L83/05 , C08L83/14 , C08L101/06
CPC分类号： C08G65/336 , C08G65/007
摘要： The invention provides a fluorine-containing curable composition comprising (A) a linear perfluoro compound having at least two alkenyl groups in its molecule and a divalent perfluoroalkylene or perfluoropolyether structure in its backbone, (B) a fluorinated organohydrogenpolysiloxane having at least four hydrosilyl groups in its molecule and a divalent perfluoro structure in its backbone, and (C) a platinum catalyst.
摘要翻译：本发明提供一种含氟可固化组合物，其包含（A）在其分子中具有至少两个烯基的直链全氟化合物及其主链中的二价全氟亚烷基或全氟聚醚结构，（B）具有至少四个氢化甲硅烷基的氟化有机氢聚硅氧烷其分子和其主链中的二价全氟结构，和（C）铂催化剂。

29. 发明授权

US6031131A Fluorinated amide compounds 失效
标题翻译：氟化酰胺化合物
公开(公告)号：US6031131A
公开(公告)日：2000-02-29
申请号：US158574
申请日：1998-09-22
申请人： Kouichi Yamaguchi , Noriyuki Koike , Hirofumi Kishita , Masatoshi Arai
发明人： Kouichi Yamaguchi , Noriyuki Koike , Hirofumi Kishita , Masatoshi Arai
IPC分类号： C08G69/26 , C07C233/36 , C07D295/185 , C08G69/40 , C08G69/42 , C07C233/05
CPC分类号： C07D295/185 , C07C233/36
摘要： The invention is directed at novel fluorinated amide compounds of formula (1): ##STR1## wherein Rf is a divalent perfluoroalkylene or perfluoro-polyether group, X is a group of formula (2), (3) or (4), and m is an integer inclusive of 0. ##STR2## R.sub.1 is a monovalent hydrocarbon group, and R.sup.2 is a divalent hydrocarbon group. These compounds can be used to obtain elastomers or cured resins having a high fluorine content and a low surface energy, making them effective as starting materials in the production of chemical and isolvent-resistant elastomeric materials, parting agents, and water repellents.
摘要翻译：本发明涉及式（1）的新型氟化酰胺化合物：其中Rf是二价全氟亚烷基或全氟聚醚基团，X是式（2），（3）或（4）的基团，m是整数包括0. R1是一价烃基，R2是二价烃基。这些化合物可用于获得具有高氟含量和低表面能的弹性体或固化树脂，使其在生产化学和抗隔离弹性体材料，脱模剂和防水剂时作为起始材料是有效的。

30. 发明授权

US5903031A MIS device, method of manufacturing the same, and method of diagnosing the same 失效
标题翻译： MIS装置及其制造方法及其诊断方法
公开(公告)号：US5903031A
公开(公告)日：1999-05-11
申请号：US675659
申请日：1996-07-03
申请人： Takayuki Yamada , Takashi Nakabayashi , Masatoshi Arai , Toshiki Yabu , Koji Eriguchi
发明人： Takayuki Yamada , Takashi Nakabayashi , Masatoshi Arai , Toshiki Yabu , Koji Eriguchi
IPC分类号： H01L21/3213 , H01L21/768 , H01L29/78
CPC分类号： H01L21/76838 , H01L21/32136
摘要： In a first region of a semiconductor substrate, there are formed MIS transistors each composed of a gate insulating film, a gate electrode, and source/drain regions. In a second region of the semiconductor substrate, there is formed an impurity diffusion layer serving as a conductive layer. On an interlayer insulating film, there are formed an antenna interconnection connected to the gate electrodes and an interconnection for charge dissipation connected to the conductive layer. During the process of dry etching for forming the interconnections, charges move into the semiconductor substrate via the interconnection for charge dissipation. The deterioration of the gate insulating film caused by the injection of charges into the gate electrode is suppressed and the degradation of characteristics of the MIS transistor including a shift in threshold is also suppressed. Even in the case where a floating interconnection region is present contiguously to the antenna interconnection, the provision of the interconnection for charge dissipation reduces the amount of shift in the threshold of each of the MIS transistors and equalizes the respective thresholds of the MIS transistors.
摘要翻译：在半导体基板的第一区域中，形成有由栅极绝缘膜，栅极电极和源极/漏极区域构成的MIS晶体管。在半导体衬底的第二区域中，形成用作导电层的杂质扩散层。在层间绝缘膜上形成连接到栅电极的天线布线和连接到导电层的用于电荷耗散的互连。在用于形成互连的干蚀刻过程中，电荷通过互连进入半导体衬底以进行电荷耗散。抑制了通过向栅电极注入电荷而导致的栅极绝缘膜的劣化，并且也抑制了包括阈值偏移的MIS晶体管的特性劣化。即使在浮动互连区域与天线互连连续地存在的情况下，提供用于电荷耗散的互连减少了每个MIS晶体管的阈值偏移量，并且均衡了MIS晶体管的各个阈值。

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