专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

21. 发明授权

US08048615B2 Silicon-containing resist underlayer coating forming composition for forming photo-crosslinking cured resist underlayer coating 有权
标题翻译：用于形成光交联固化抗蚀剂下层涂层的含硅抗蚀剂下层涂料组合物
公开(公告)号：US08048615B2
公开(公告)日：2011-11-01
申请号：US12086167
申请日：2006-12-01
申请人： Satoshi Takei , Yusuke Horiguchi , Keisuke Hashimoto , Makoto Nakajima
发明人： Satoshi Takei , Yusuke Horiguchi , Keisuke Hashimoto , Makoto Nakajima
IPC分类号： G03F7/40 , G03F7/38 , G03F7/11
CPC分类号： H01L21/02126 , G03F7/0752 , G03F7/11 , H01L21/02282 , H01L21/0273 , H01L21/312
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating. The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, includes a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
摘要翻译：提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。在制造半导体器件的光刻工艺中通过光照射形成用作光致抗蚀剂底层的底层涂层组合物包括含有5〜45质量％的硅原子（A）的聚合性化合物，光聚合引发剂（B）和溶剂（C）。

22. 发明申请

US20110143149A1 RESIST UNDERLAYER FILM FORMING COMPOSITION CONTAINING SILICONE HAVING ONIUM GROUP 有权
标题翻译：含有硅集合体的耐下层膜成膜组合物
公开(公告)号：US20110143149A1
公开(公告)日：2011-06-16
申请号：US13058109
申请日：2009-08-13
申请人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
发明人： Wataru Shibayama , Makoto Nakajima , Yuta Kanno
IPC分类号： B32B9/04 , C07F7/02 , C09D7/12 , H01L21/311
CPC分类号： G03F7/0755 , C08G77/26 , C09D5/006 , C09D183/08 , G03F7/0045 , G03F7/0757 , G03F7/095 , Y10T428/31663
摘要： There is provided a resist underlayer film forming composition for lithography for forming a resist underlayer film capable of being used as a hard mask or a bottom anti-reflective coating, or a resist underlayer film causing no intermixing with a resist and having a dry etching rate higher than that of the resist. A film forming composition comprising a silane compound having an onium group, wherein the silane compound having an onium group is a hydrolyzable organosilane having, in a molecule thereof, an onium group, a hydrolysis product thereof, or a hydrolysis-condensation product thereof. The composition uses as a resist underlayer film forming composition for lithography. A composition comprising a silane compound having an onium group, and a silane compound having no onium group, wherein the silane compound having an onium group exists in the whole silane compound at a ratio of less than 1% by mol, for example 0.01 to 0.95% by mol. The hydrolyzable organosilane may be a compound of Formula: R1aR2bSi(R3)4-(a+b). A resist underlayer film obtained by applying the composition as claimed in any one of claims 1 to 14 onto a semiconductor substrate and by baking the composition.
摘要翻译：提供了用于形成抗蚀剂下层膜的光刻用抗蚀剂下层膜形成用组合物，能够用作硬掩模或底部抗反射涂层，或者不与抗蚀剂混合并具有干蚀刻速率的抗蚀剂下层膜高于抗蚀剂。一种包含具有鎓基的硅烷化合物的成膜组合物，其中具有鎓基的硅烷化合物是其分子中具有鎓基，其水解产物或其水解缩合产物的可水解的有机硅烷。该组合物用作光刻的抗蚀剂下层膜形成组合物。包含具有鎓基的硅烷化合物和不具有鎓基的硅烷化合物的组合物，其中具有鎓基的硅烷化合物以小于1摩尔％的比例存在于全部硅烷化合物中，例如0.01至0.95 ％摩尔。可水解的有机硅烷可以是式：R1aR2bSi（R3）4-（a + b）的化合物。 14.一种抗蚀剂下层膜，其通过将权利要求1〜14中任一项所述的组合物涂布在半导体基板上，并烘烤该组合物而得到。

23. 发明申请

US20100210765A1 RESIST UNDERLAYER FILM-FORMING COMPOSITION, PRODUCTION METHOD OF SEMICONDUCTOR DEVICE USING THE SAME, AND ADDITIVE FOR RESIST UNDERLAYER FILM-FORMING COMPOSITION 审中-公开
标题翻译：电阻膜成膜组合物，使用其的半导体器件的制造方法以及用于电阻膜形成组合物的添加剂
公开(公告)号：US20100210765A1
公开(公告)日：2010-08-19
申请号：US12678311
申请日：2008-09-30
申请人： Makoto Nakajima , Hideo Suzuki
发明人： Makoto Nakajima , Hideo Suzuki
IPC分类号： C08K5/1515 , C08K5/092 , C07D303/02
CPC分类号： G03F7/094 , G03F7/0757
摘要： There is provided a composition for forming a resist underlayer film that the adhesion with a resist applied on the resist underlayer film is enhanced and the collapse of a resist pattern is suppressed. A resist underlayer film-forming composition for lithography comprising: a polymer having silicon atoms in the backbone; a compound of a polycyclic structure; and an organic solvent, wherein the compound of a polycyclic structure has at least two carboxyl groups as substituents; the two carboxyl groups are individually bonded to two carbon atoms adjacent to each other forming the polycyclic structure; and the two carboxyl groups both have an endo configuration or an exo configuration, or have a cis configuration.
摘要翻译：提供了用于形成抗蚀剂下层膜的组合物，其中抗蚀剂下层膜上施加的抗蚀剂的粘附性增强，并且抗蚀剂图案的崩溃被抑制。一种用于光刻的抗蚀剂下层膜形成组合物，包括：在骨架中具有硅原子的聚合物; 多环结构的化合物; 和有机溶剂，其中多环结构的化合物具有至少两个羧基作为取代基; 两个羧基分别与彼此相邻的两个碳原子键合形成多环结构; 并且两个羧基都具有内部构型或外部构型，或具有顺式构型。

24. 发明申请

US20090162782A1 Silicon-Containing Resist Underlayer Coating Forming Composition for Forming Photo-Crosslinking Cured Resist Underlayer Coating 有权
标题翻译：用于形成光交联固化抗蚀剂底层涂层的含硅抗蚀剂底层涂料组合物
公开(公告)号：US20090162782A1
公开(公告)日：2009-06-25
申请号：US12086167
申请日：2006-12-01
申请人： Satoshi Takei , Yusuke Horiguchi , Keisuke Hashimoto , Makoto Nakajima
发明人： Satoshi Takei , Yusuke Horiguchi , Keisuke Hashimoto , Makoto Nakajima
IPC分类号： G03F7/20 , G03F7/004
CPC分类号： H01L21/02126 , G03F7/0752 , G03F7/11 , H01L21/02282 , H01L21/0273 , H01L21/312
摘要： There is provided an underlayer coating that is used as an underlayer of photoresists in lithography process of the manufacture of semiconductor devices and that has a high dry etching rate in comparison to the photoresists depending on the type of etching gas, does not intermix with the photoresists, and is capable of flattening the surface of a semiconductor substrate having holes of a high aspect ratio; and an underlayer coating forming composition for forming the underlayer coating.The underlayer coating forming composition for forming by light irradiation an underlayer coating used as an underlayer of a photoresist in a lithography process of the manufacture of semiconductor devices, comprises a polymerizable compound containing 5 to 45% by mass of silicon atom (A), a photopolymerization initiator (B), and a solvent (C).
摘要翻译：提供了一种下层涂层，其用作半导体器件制造的光刻工艺中的光致抗蚀剂的底层，并且与根据蚀刻气体的类型的光致抗蚀剂相比具有高的干蚀刻速率，不与光致抗蚀剂混合并且能够使具有高纵横比的孔的半导体衬底的表面变平; 以及用于形成下层涂层的下层涂层形成组合物。在制造半导体器件的光刻工艺中，通过光照射形成用于光致抗蚀剂的底层的下层涂层的下层涂层形成组合物包含含有5〜45质量％的硅原子（A）的聚合性化合物，光聚合引发剂（B）和溶剂（C）。

25. 发明申请

US20090016149A1 MATERIAL MOISTURE CONTENT ADJUSTMENT METHOD 有权
标题翻译：材料水分含量调整方法
公开(公告)号：US20090016149A1
公开(公告)日：2009-01-15
申请号：US11909499
申请日：2006-03-27
申请人： Ichizou Kobayashi , Takeshi Sasakura , Toshiyuki Tanaka , Katsuhiro Uemoto , Makoto Nakajima
发明人： Ichizou Kobayashi , Takeshi Sasakura , Toshiyuki Tanaka , Katsuhiro Uemoto , Makoto Nakajima
IPC分类号： B01F15/06
CPC分类号： B28C7/0038 , B01F3/1221 , B01F3/186 , B01F3/20 , B01F3/2014 , B01F3/2064 , B01F3/2078 , B01F3/22 , B01F5/0475 , B01F5/0478 , B28C3/00 , B28C5/468 , B28C7/024 , B28C7/026 , C04B33/04 , C04B35/6263 , G21F9/162 , G21F9/34
摘要： When making moisture content adjustment by adding liquid such as water to a raw material such as pulverulent material including bentonite, uniform mixing of the liquid such as water with the raw material is given with relatively simple facilities, moisture content adjustment of a large quantity of raw materials is attainable, and besides, a material having satisfactory performances such as impermeability is obtainable through uniform moisture content adjustment. Within a mixing tank (1) configured with a normal powder mixer kept at low temperatures, pulverulent bentonite (A) and fine granular ice (B) are stirred and mixed. Stirring and mixing of the fellow pulverulent materials are adapted to uniformly mix the pulverulent bentonite (A) and the fine granular ice (B), enabling uniformly moisture content-adjusted bentonite to be obtained. A liquid-nitrogen gas bomb (21), for instance, is connected to the mixing tank (1), causing the inside of the mixing tank to be kept at low temperatures with nitrogen gas supplied from the bomb, before putting the prepared fine granular ice (B) through an inlet port (20).
摘要翻译：当通过向诸如膨润土的粉末材料等原料添加水等水分进行水分含量调节时，以比较简单的设备使水等液体与原料均匀混合，大量原料可以获得材料，此外，通过均匀的含水量调节可获得具有令人满意的性能如不渗透性的材料。在配置有保持在低温下的普通粉末混合器的混合罐（1）中，搅拌混合粉状膨润土（A）和细粒状冰（B）。搅拌和混合粉末状材料适于均匀混合粉状膨润土（A）和细粒状冰（B），从而可获得均匀的含水量调节膨润土。例如，将液氮气体炸弹（21）连接到混合罐（1），在将制备好的细颗粒冰（B）通过入口（20）。

26. 发明申请

US20050034746A1 Method of cleaning abrasive plates of abrasive machine and cleaning device 失效
标题翻译：清洗研磨机研磨板和清洗装置的方法
公开(公告)号：US20050034746A1
公开(公告)日：2005-02-17
申请号：US10937830
申请日：2004-09-09
申请人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
发明人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
IPC分类号： B08B3/02 , B08B15/04 , B24B37/08 , B24B53/007 , B24B53/017 , B08B3/00
CPC分类号： B24B37/08 , B08B3/024 , B08B15/04 , B08B2203/0229 , B24B53/017 , Y10S134/902
摘要： The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.
摘要翻译：本发明的方法清洗研磨机的上磨料板和下研磨板的磨料面。该方法由清洁装置执行，该清洁装置包括：用于喷射水的喷嘴; 用于防止喷射水在空气中飞散的刷子，刷子包围喷嘴; 以及用于封闭防磨刷和上磨料板的外边缘之间的间隙的另一刷子，其特征在于以下步骤：从喷嘴向上磨料板的研磨面喷射水; 将喷嘴移向上磨料板的外边缘; 并且当在防磨刷和上磨料板的外边缘之间形成间隙时，通过闭合刷闭合间隙。

27. 发明授权

US06807701B2 Method of cleaning abrasive plates of abrasive machine and cleaning device 失效
标题翻译：清洗研磨机研磨板和清洗装置的方法
公开(公告)号：US06807701B2
公开(公告)日：2004-10-26
申请号：US09992191
申请日：2001-11-06
申请人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
发明人： Yasuhide Denda , Yoshio Nakamura , Yoshinobu Nishimoto , Makoto Nakajima , Tsuyoshi Hasegawa , Norihiko Moriya
IPC分类号： B08B1100
CPC分类号： B24B37/08 , B08B3/024 , B08B15/04 , B08B2203/0229 , B24B53/017 , Y10S134/902
摘要： The method of the present invention cleans abrasive faces of an upper abrasive plate and a lower abrasive plate of an abrasive machine. The method is executed by a cleaning device including: a nozzle for jetting water; a brush for preventing the jetted water from scattering in the air, the brush enclosing the nozzle; and another brush for closing a gap between the preventing brush and an outer edge of the upper abrasive plate, the method is characterized by the steps of: jetting water from the nozzle toward the abrasive face of the upper abrasive plate; moving the nozzle toward the outer edge of the upper abrasive plate; and closing the gap by the closing brush when the gap is formed between the preventing brush and the outer edge of the upper abrasive plate.
摘要翻译：本发明的方法清洗研磨机的上磨料板和下研磨板的磨料面。该方法由清洁装置执行，该清洁装置包括：用于喷射水的喷嘴; 用于防止喷射水在空气中飞散的刷子，刷子包围喷嘴; 以及用于封闭防磨刷和上磨料板的外边缘之间的间隙的另一刷子，其特征在于以下步骤：从喷嘴向上磨料板的研磨面喷射水; 将喷嘴移向上磨料板的外边缘; 并且当在防磨刷和上磨料板的外边缘之间形成间隙时，通过闭合刷闭合间隙。

28. 发明授权

US06326993B1 Pulse width modulation system and image forming apparatus having the pulse width modulation system 失效
标题翻译：脉宽调制系统和具有脉宽调制系统的图像形成装置
公开(公告)号：US06326993B1
公开(公告)日：2001-12-04
申请号：US09526289
申请日：2000-03-15
申请人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
发明人： Hiroki Satoh , Makoto Nakajima , Koji Tanimoto
IPC分类号： B41J247
CPC分类号： G06K15/00 , G06K2215/0002 , G06K2215/0011 , G06K2215/0082
摘要： When a CPU begins to monitor whether delay variation characteristics of a pulse width variation circuit have varied, it selects a basic delay setting value in a basic delay value setting block from a smallest one. The CPU sets a division number in a phase select block from a given minimum desired division number for pulse width modulation. The CPU senses the level of a phase comparison result signal (PHASE) from the pulse width modulation circuit. If the phase comparison result signal is stable at “1”, the CPU 1 fixes the division number. If the phase comparison result signal is “0” and the division number is not maximum, the CPU increases the division number and goes back to the setting of the division number. If the division number is maximum, the CPU increases the basic delay and goes back to the basic delay setting.
摘要翻译：当CPU开始监视脉宽变化电路的延迟变化特性是否变化时，从最小的基本延迟值设定块中选择基本的延迟设定值。 CPU根据脉冲宽度调制的给定最小期望分频数设置相位选择块中的分频数。 CPU检测来自脉宽调制电路的相位比较结果信号（PHASE）的电平。如果相位比较结果信号稳定在“1”，则CPU 1固定分割号。如果相位比较结果信号为“0”且分频数不是最大值，则CPU增加分频数，并返回到分频数的设置。如果分频数是最大值，则CPU会增加基本延时并返回到基本延时设置。

29. 发明授权

US5908347A Polishing system for polishing wafer 失效
标题翻译：抛光晶圆抛光系统
公开(公告)号：US5908347A
公开(公告)日：1999-06-01
申请号：US838636
申请日：1997-04-11
申请人： Makoto Nakajima , Yoshio Nakamura , Yasuhide Denda , Toshihisa Yanagisawa , Toshiaki Seki , Satoru Arakawa , Masahiro Takeuchi , Mitsue Ogawa , Masanori Fukushima
发明人： Makoto Nakajima , Yoshio Nakamura , Yasuhide Denda , Toshihisa Yanagisawa , Toshiaki Seki , Satoru Arakawa , Masahiro Takeuchi , Mitsue Ogawa , Masanori Fukushima
IPC分类号： B23Q41/04 , B24B37/00 , B24B37/04 , B24B49/00
CPC分类号： B24B37/345 , B23Q41/04
摘要： In the polishing system of the present invention, a adhering unit adheres a wafer on a carrying plate using liquid. A polishing unit polishes the wafer using a polishing plate. A feeding unit conveys the carrying plate from the adhering unit to the polishing unit. A dismounting unit removes the wafer from the carrying plate. A first discharging unit conveys the carrying plate from the polishing unit to the dismounting unit. A cleaning unit cleans the vacant carrying plate. A second discharging unit conveys the carrying plate from the dismounting unit to the cleaning unit. A third discharging unit conveys the carrying plate from the cleaning unit to the adhering unit. The units are formed into a loop lines so that the carrying plate is circulated in the loop line and the wafers are polished therein.
摘要翻译：在本发明的抛光系统中，粘合单元使用液体将晶片粘附在承载板上。抛光单元使用抛光板抛光晶片。馈送单元将承载板从粘合单元传送到抛光单元。拆卸单元从承载板上取下晶片。第一排放单元将承载板从抛光单元传送到拆卸单元。清洁单元清洁空载板。第二排放单元将搬运单元从拆卸单元传送到清洁单元。第三排放单元将承载板从清洁单元传送到粘附单元。这些单元形成为环线，使得承载板在环线中循环并且晶片在其中被抛光。

30. 发明授权

US5879225A Polishing machine 失效
标题翻译：抛光机
公开(公告)号：US5879225A
公开(公告)日：1999-03-09
申请号：US834612
申请日：1997-04-14
申请人： Michio Kudo , Yasuo Inada , Makoto Nakajima , Masanori Fukushima
发明人： Michio Kudo , Yasuo Inada , Makoto Nakajima , Masanori Fukushima
IPC分类号： B24B37/10 , B24B37/12 , B24B47/10 , H01L21/304 , B24B7/22
CPC分类号： B24B37/105 , B24B47/10
摘要： A polishing machine of the present invention is capable of uniformly polishing a member to be polished with high flatness, and polishing cloth, which is employed in the polishing machine, is uniformly abraded. In the polishing machine, a polishing plate is capable of rotating. A supporting table rotatably supports the polishing plate. A rotary driving mechanism is mounted on the supporting table, and it rotates the polishing plate. A base supports the supporting table. An orbital driving mechanism moves the supporting table along a circular orbit without spinning about its own axis.
摘要翻译：本发明的抛光机能够以高的平坦度均匀地研磨待抛光的部件，并且在抛光机中使用的抛光布被均匀地磨损。在抛光机中，抛光板能够旋转。支撑台可旋转地支撑抛光板。旋转驱动机构安装在支撑台上，并使抛光板旋转。基座支撑支撑台。轨道驱动机构沿着圆形轨道移动支撑台，而不绕其自身的轴线旋转。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式