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21. 发明申请

US20070210248A1 Technique for monitoring and controlling a plasma process 失效
标题翻译：监测和控制等离子体工艺的技术
公开(公告)号：US20070210248A1
公开(公告)日：2007-09-13
申请号：US11371907
申请日：2006-03-10
申请人： Bon-Woong Koo , Ludovic Godet , Vassilis Vourloumis , Vikram Singh , Ziwei Fang
发明人： Bon-Woong Koo , Ludovic Godet , Vassilis Vourloumis , Vikram Singh , Ziwei Fang
IPC分类号： H01J49/40
CPC分类号： H01J49/40 , H01J37/32935
摘要： An in-situ ion sensor is disclosed for monitoring ion species in a plasma chamber. The ion sensor may comprise: a drift tube; an extractor electrode and a plurality of electrostatic lenses disposed at a first end of the drift tube, wherein the extractor electrode is biased to attract ions from a plasma in the plasma chamber, and wherein the plurality of electrostatic lenses cause at least one portion of the attracted ions to enter the drift tube and drift towards a second end of the drift tube within a limited divergence angle; an ion detector disposed at the second end of the drift tube, wherein the ion detector detects arrival times associated with the at least one portion of the attracted ions; and a housing for the extractor, the plurality of electrostatic lenses, the drift tube, and the ion detector, wherein the housing accommodates differential pumping between the ion sensor and the plasma chamber.
摘要翻译：公开了用于监测等离子体室中的离子种类的原位离子传感器。离子传感器可以包括：漂移管; 提取器电极和设置在漂移管的第一端处的多个静电透镜，其中所述提取器电极被偏置以从所述等离子体室中的等离子体吸引离子，并且其中所述多个静电透镜引起所述静电透镜的至少一部分吸引离子进入漂移管并在有限的发散角内漂移到漂移管的第二端; 设置在所述漂移管的第二端处的离子检测器，其中所述离子检测器检测与所述吸引离子的所述至少一部分相关联的到达时间; 以及用于提取器，多个静电透镜，漂移管和离子检测器的壳体，其中壳体容纳离子传感器和等离子体室之间的差分泵浦。

22. 发明申请

US20130062309A1 METHOD AND SYSTEM FOR MODIFYING RESIST OPENINGS USING MULTIPLE ANGLED IONS 有权
标题翻译：使用多个离子点修饰电阻开口的方法和系统
公开(公告)号：US20130062309A1
公开(公告)日：2013-03-14
申请号：US13228625
申请日：2011-09-09
申请人： Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
发明人： Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
IPC分类号： C23F1/02 , C23F1/08
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译：一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。

23. 发明授权

US08354655B2 Method and system for controlling critical dimension and roughness in resist features 有权
标题翻译：用于控制抗蚀剂特征的临界尺寸和粗糙度的方法和系统
公开(公告)号：US08354655B2
公开(公告)日：2013-01-15
申请号：US13099432
申请日：2011-05-03
申请人： Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
发明人： Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
IPC分类号： H01J37/32
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译：一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光致抗蚀剂浮雕特征。

24. 发明申请

US20120083136A1 METHOD AND SYSTEM FOR MODIFYING PATTERNED PHOTORESIST USING MULTI-STEP ION IMPLANTATION 有权
标题翻译：使用多步离子植入修饰图案的方法和系统
公开(公告)号：US20120083136A1
公开(公告)日：2012-04-05
申请号：US12896046
申请日：2010-10-01
申请人： Ludovic Godet , Joseph C. Olson , Patrick M. Martin
发明人： Ludovic Godet , Joseph C. Olson , Patrick M. Martin
IPC分类号： H01L21/26 , G21K5/10
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译：一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。

25. 发明授权

US08603591B2 Enhanced etch and deposition profile control using plasma sheath engineering 有权
标题翻译：使用等离子体护套工程的增强蚀刻和沉积轮廓控制
公开(公告)号：US08603591B2
公开(公告)日：2013-12-10
申请号：US12645638
申请日：2009-12-23
申请人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
发明人： Ludovic Godet , Timothy Miller , George Papasouliotis , Vikram Singh
IPC分类号： H05H1/24
CPC分类号： B44C1/227 , C23C16/045 , C23C16/50 , H01J37/32412 , H01J37/32623 , H01J2237/3344 , H01J2237/3345
摘要： A plasma processing tool is used to deposit material on a workpiece. For example, a method for conformal deposition of material is disclosed. In this embodiment, the plasma sheath shape is modified to allow material to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of different features can be deposited onto. In another embodiment, a plasma processing tool is used to etch a workpiece. In this embodiment, the plasma sheath shape is altered to allow ions to impact the workpiece at a range of incident angles. By varying this range of incident angles over time, a variety of differently shaped features can be created.
摘要翻译：使用等离子体处理工具将材料沉积在工件上。例如，公开了一种用于材料的共形沉积的方法。在该实施例中，等离子体护套形状被修改以允许材料在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以沉积各种不同的特征。在另一个实施例中，使用等离子体处理工具来蚀刻工件。在该实施例中，等离子体鞘形状被改变以允许离子在入射角的范围内冲击工件。通过随时间改变入射角的这个范围，可以产生各种不同形状的特征。

26. 发明申请

US20110039034A1 PULSED DEPOSITION AND RECRYSTALLIZATION AND TANDEM SOLAR CELL DESIGN UTILIZING CRYSTALLIZED/AMORPHOUS MATERIAL 审中-公开
标题翻译：脉冲沉积和再结晶和使用晶体/非晶材料的太阳能电池设计
公开(公告)号：US20110039034A1
公开(公告)日：2011-02-17
申请号：US12538913
申请日：2009-08-11
申请人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
发明人： Helen Maynard , George D. Papasouliotis , Vikram Singh , Christopher Hatem , Ludovic Godet
IPC分类号： C23C14/14 , C23C14/00
CPC分类号： H01L21/0237 , H01L21/02381 , H01L21/0245 , H01L21/02505 , H01L21/0251 , H01L21/02532 , H01L21/0259 , H01L21/02667 , H01L21/2236 , H01L31/0725 , H01L31/182 , H01L31/1872 , Y02E10/546 , Y02P70/521
摘要： A method of depositing and crystallizing materials on a substrate is disclosed. In a particular embodiment, the method may include creating a plasma having deposition-related species and energy-carrying species. During a first time period, no bias voltage is applied to the substrate, and species are deposited on the substrate via plasma deposition. During a second time period, a voltage is applied to the substrate, which attracts ions to and into the deposited species, thereby causing the deposited layer to crystallize. This process can be repeated until an adequate thickness is achieved. In another embodiment, the bias voltage or bias pulse duration can be varied to change the amount of crystallization that occurs. In another embodiment, a dopant may be used to dope the deposited layers.
摘要翻译：公开了一种在衬底上沉积和结晶材料的方法。在特定实施例中，该方法可以包括产生具有沉积相关物质和能量携带物质的等离子体。在第一时间段期间，没有偏置电压施加到衬底，并且通过等离子体沉积物质沉积在衬底上。在第二时间段期间，向衬底施加电压，其将离子吸引到沉积的物质中，从而使沉积层结晶。可以重复该过程，直到达到足够的厚度。在另一个实施例中，可以改变偏置电压或偏置脉冲持续时间以改变发生的结晶量。在另一个实施方案中，可以使用掺杂剂来掺杂沉积的层。

27. 发明授权

US07453059B2 Technique for monitoring and controlling a plasma process 失效
标题翻译：监测和控制等离子体工艺的技术
公开(公告)号：US07453059B2
公开(公告)日：2008-11-18
申请号：US11678524
申请日：2007-02-23
申请人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
发明人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
IPC分类号： G01N27/26 , G01N33/00 , H01J49/40
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译：用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。漂移管位于外壳中。提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。多个电极位于漂移管的靠近提取器电极的第一端。多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。离子检测器位于漂移管的第二端附近。离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

28. 发明授权

US08974683B2 Method and system for modifying resist openings using multiple angled ions 有权
标题翻译：使用多角度离子修饰抗蚀剂孔的方法和系统
公开(公告)号：US08974683B2
公开(公告)日：2015-03-10
申请号：US13228625
申请日：2011-09-09
申请人： Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
发明人： Ludovic Godet , Patrick M. Martin , Joseph C. Olson , Andrew J. Hornak
IPC分类号： H01L21/302 , H01L21/027 , H01J37/32 , G03F7/40
CPC分类号： H01L21/0273 , G03F7/40 , H01J37/32422
摘要： A method of reducing roughness in an opening in a surface of a resist material disposed on a substrate, comprises generating a plasma having a plasma sheath and ions therein. The method also includes modifying a shape of a boundary defined between the plasma and the plasma sheath with a plasma sheath modifier so that a portion of the boundary facing the resist material is not parallel to a plane defined by the surface of the substrate. The method also includes providing a first exposure of ions while the substrate is in a first position, the first exposure comprising ions accelerated across the boundary having the modified shape toward the resist material over an angular range with respect to the surface of the substrate.
摘要翻译：一种降低设置在基板上的抗蚀剂材料的表面中的开口中的粗糙度的方法，包括产生具有等离子体鞘和其中的离子的等离子体。该方法还包括使用等离子体护套改性剂修改限定在等离子体和等离子体护套之间的边界的形状，使得面向抗蚀剂材料的边界的一部分不平行于由衬底的表面限定的平面。该方法还包括在衬底处于第一位置时提供离子的第一次曝光，该第一曝光包括在相对于衬底的表面的角度范围内跨过具有改变形状的边界加速离子的离子。

29. 发明申请

US20120280140A1 METHOD AND SYSTEM FOR CONTROLLING CRITICAL DIMENSION AND ROUGHNESS IN RESIST FEATURES 有权
标题翻译：用于控制关键特征的关键尺寸和粗糙度的方法和系统
公开(公告)号：US20120280140A1
公开(公告)日：2012-11-08
申请号：US13099432
申请日：2011-05-03
申请人： Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
发明人： Ludovic Godet , Christopher J. Leavitt , Joseph C. Olson , Patrick M. Martin
IPC分类号： B01J19/08 , H01J27/02
CPC分类号： G03F7/20 , G03F7/2024 , G03F7/40 , H01J37/3023 , H01J37/3053 , H01J2237/3174 , H01L21/0273
摘要： A method of treating a photoresist relief feature having an initial line roughness and an initial critical dimension. The method may include directing ions toward the photoresist in a first exposure at a first angular range and first dose rate and a that is configured to reduce the initial line roughness to a second line roughness. The method may also include directing ions toward the photoresist relief feature in a second exposure at a second ion dose rate greater than the first dose rate, wherein the second ion dose rate is configured to swell the photoresist relief feature.
摘要翻译：一种处理具有初始线粗糙度和初始临界尺寸的光致抗蚀剂浮雕特征的方法。该方法可以包括在第一角度范围和第一剂量率的第一曝光中将离子引向光致抗蚀剂，并且被配置为将初始线粗糙度减小到第二线粗糙度。该方法还可以包括以大于第一剂量率的第二离子剂量率在第二曝光中将离子引向光致抗蚀剂浮雕特征，其中第二离子剂量率被配置为溶胀光刻胶浮雕特征。

30. 发明授权

US08133804B1 Method and system for modifying patterned photoresist using multi-step ion implantation 有权
标题翻译：使用多步离子注入修饰图案化光刻胶的方法和系统
公开(公告)号：US08133804B1
公开(公告)日：2012-03-13
申请号：US12896046
申请日：2010-10-01
申请人： Ludovic Godet , Joseph C. Olson , Patrick M. Martin
发明人： Ludovic Godet , Joseph C. Olson , Patrick M. Martin
IPC分类号： H01L21/425
CPC分类号： H01J37/317 , H01J37/3056 , H01J2237/31796 , H01L21/26586 , H01L21/266
摘要： A method of reducing the roughness profile in a plurality of patterned resist features. Each patterned resist feature includes a first sidewall and a second sidewall opposite the first sidewall, wherein each patterned resist feature comprises a mid frequency line width roughness and a low frequency linewidth roughness. A plurality of ion exposure cycles are performed, wherein each ion exposure cycle comprises providing ions at a tilt angle of about five degrees or larger upon the first sidewall, and providing ions at a tilt angle of about five degrees or larger upon the second sidewall. Upon the performing of the plurality of ion exposure cycles the mid frequency and low frequency linewidth roughness are reduced.
摘要翻译：一种降低多个图案化抗蚀剂特征中的粗糙度轮廓的方法。每个图案化的抗蚀剂特征包括第一侧壁和与第一侧壁相对的第二侧壁，其中每个图案化的抗蚀剂特征包括中频线宽粗糙度和低频线宽粗糙度。执行多个离子曝光循环，其中每个离子曝光循环包括在第一侧壁上以约5度或更大的倾斜角度提供离子，并且在第二侧壁上以约5度或更大的倾斜角提供离子。在执行多个离子曝光循环时，中频和低频线宽粗糙度减小。

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