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1. 发明授权

US07453059B2 Technique for monitoring and controlling a plasma process 失效
标题翻译：监测和控制等离子体工艺的技术
公开(公告)号：US07453059B2
公开(公告)日：2008-11-18
申请号：US11678524
申请日：2007-02-23
申请人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
发明人： Bon-Woong Koo , Ziwei Fang , Ludovic Godet , Vikram Singh , Vassilis Panayotis Vourloumis , Bernard G. Lindsay
IPC分类号： G01N27/26 , G01N33/00 , H01J49/40
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A time-of-flight ion sensor for monitoring ion species in a plasma includes a housing. A drift tube is positioned in the housing. An extractor electrode is positioned in the housing at a first end of the drift tube so as to attract ions from the plasma. A plurality of electrodes is positioned at a first end of the drift tube proximate to the extractor electrode. The plurality of electrodes is biased so as to cause at least a portion of the attracted ions to enter the drift tube and to drift towards a second end of the drift tube. An ion detector is positioned proximate to the second end of the drift tube. The ion detector detects arrival times associated with the at least the portion of the attracted ions.
摘要翻译：用于监测等离子体中的离子种类的飞行时间离子传感器包括壳体。漂移管位于外壳中。提取器电极位于漂移管的第一端处的壳体中，以便从等离子体吸引离子。多个电极位于漂移管的靠近提取器电极的第一端。多个电极被偏置，以使至少一部分吸引的离子进入漂移管并漂移到漂移管的第二端。离子检测器位于漂移管的第二端附近。离子检测器检测与吸引的离子的至少一部分相关联的到达时间。

2. 发明申请

US20100255683A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20100255683A1
公开(公告)日：2010-10-07
申请号：US12418120
申请日：2009-04-03
申请人： Ludovic GODET , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
发明人： Ludovic GODET , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
IPC分类号： H01L21/3065 , C23C16/513 , H01L21/306 , H01L21/302
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。

3. 发明授权

US08623171B2 Plasma processing apparatus 有权
标题翻译：等离子体处理装置
公开(公告)号：US08623171B2
公开(公告)日：2014-01-07
申请号：US12418120
申请日：2009-04-03
申请人： Ludovic Godet , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
发明人： Ludovic Godet , Timothy J. Miller , Christopher J. Leavitt , Bernard G. Lindsay
IPC分类号： H01L21/306 , C23C16/00
CPC分类号： H01J37/32623
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber having a plasma sheath adjacent to the front surface of the workpiece, and an insulating modifier. The insulting modifier is configured to control a shape of a boundary between the plasma and the plasma sheath so a portion of the shape of the boundary is not parallel to a plane defined by a front surface of the workpiece facing the plasma. Controlling the shape of the boundary between the plasma and the plasma sheath enables a large range of incident angles of particles striking the workpiece to be achieved.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源，其具有与工件的前表面相邻的等离子体护套和绝缘改性剂。绝缘改性剂被配置为控制等离子体和等离子体护套之间的边界的形状，使得边界形状的一部分不平行于由面向等离子体的工件的前表面限定的平面。通过控制等离子体和等离子体护套之间的边界的形状，能够实现粒子撞击工件的大范围入射角。

4. 发明申请

US20090001890A1 Apparatus for Plasma Processing a Substrate and a Method Thereof 审中-公开
标题翻译：用于等离子体处理基板的装置及其方法
公开(公告)号：US20090001890A1
公开(公告)日：2009-01-01
申请号：US12098781
申请日：2008-04-07
申请人： Vikram Singh , Timothy J. Miller , Bernard G. Lindsay
发明人： Vikram Singh , Timothy J. Miller , Bernard G. Lindsay
IPC分类号： H05H1/46
CPC分类号： C23C14/345 , H01J37/321 , H01J37/32165 , H01J37/32412 , H01L21/32136
摘要： An apparatus for processing a substrate includes a pulsed power supply that generates a waveform having a first period with a first power level and a second period with a second power level. A plasma source generates a first plasma during the first period and a second plasma during the second period. The first plasma may have higher plasma density than the second plasma. A bias voltage power supply generates a bias voltage waveform at an output that is electrically connected to a platen which supports a substrate. The bias voltage waveform having a first voltage and a second voltage may be coupled to the substrate. The first voltage may have more negative potential than the second voltage.
摘要翻译：一种用于处理衬底的设备包括脉冲电源，其生成具有第一功率电平的第一周期和具有第二功率电平的第二周期的波形。等离子体源在第一周期期间产生第一等离子体，在第二周期期间产生第二等离子体。第一等离子体可具有比第二等离子体更高的等离子体密度。偏置电压电源在与支撑衬底的压板电连接的输出端产生偏置电压波形。具有第一电压和第二电压的偏置电压波形可以耦合到衬底。第一电压可能具有比第二电压更多的负电位。

5. 发明申请

US20100159120A1 PLASMA ION PROCESS UNIFORMITY MONITOR 审中-公开
标题翻译：等离子体过程均匀监测
公开(公告)号：US20100159120A1
公开(公告)日：2010-06-24
申请号：US12341574
申请日：2008-12-22
申请人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
发明人： Joseph P. Dzengeleski , George M. Gammel , Bernard G. Lindsay , Vikram Singh
IPC分类号： C23C14/48 , B05C11/00
CPC分类号： H01J37/32935
摘要： An ion uniformity monitoring device is positioned within a plasma process chamber and includes a plurality of sensors located above and a distance away from a workpiece within the chamber. The sensors are configured to detect the number of secondary electrons emitted from a surface of the workpiece exposed to a plasma process. Each sensor outputs a current signal proportional to the detected secondary electrons. A current comparator circuit outputs a processed signal resulting from each of the plurality of current signals. The detection of the secondary electrons emitted from the workpiece during plasma processing is indicative of the uniformity characteristic across the surface of the workpiece and may be performed in situ and during on-line plasma processing.
摘要翻译：离子均匀性监测装置位于等离子体处理室内，并且包括位于室内的工件上方并远离工件的多个传感器。传感器被配置为检测从暴露于等离子体处理的工件的表面发射的二次电子的数量。每个传感器输出与检测到的二次电子成比例的电流信号。电流比较器电路输出由多个电流信号中的每一个产生的经处理的信号。在等离子体处理期间从工件发射的二次电子的检测表示跨工件表面的均匀性特征，并且可以在原位和在线等离子体处理期间进行。

6. 发明授权

US08664561B2 System and method for selectively controlling ion composition of ion sources 有权
标题翻译：用于选择性地控制离子源的离子组成的系统和方法
公开(公告)号：US08664561B2
公开(公告)日：2014-03-04
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： B23K10/00
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

7. 发明申请

US20090000946A1 PLASMA PROCESSING WITH ENHANCED CHARGE NEUTRALIZATION AND PROCESS CONTROL 审中-公开
标题翻译：具有增强充电中和过程控制的等离子体处理
公开(公告)号：US20090000946A1
公开(公告)日：2009-01-01
申请号：US12105761
申请日：2008-04-18
申请人： Vikram Singh , Timothy J. Miller , Bernard G. Lindsay
发明人： Vikram Singh , Timothy J. Miller , Bernard G. Lindsay
IPC分类号： C23C14/32
CPC分类号： C23C14/345 , H01J37/321 , H01J37/32165 , H01J37/32412 , H01L21/32136
摘要： A plasma processing apparatus includes a platen that supports a substrate for plasma processing. A RF power supply generates a multi-level RF power waveform at an output having at least a first period with a first power level and a second period with a second power level. A RF plasma source having an electrical input that is electrically connected to the output of the RF power supply generates at least a first RF plasma with the first RF power level during the first period and a second RF plasma with the second RF power level during the second period. A bias voltage power supply having an output that is electrically connected to the platen generates a bias voltage waveform that is sufficient to attract ions in the plasma to the substrate for plasma processing.
摘要翻译：等离子体处理装置包括支撑用于等离子体处理的基板的压板。 RF电源在具有第一功率电平的至少第一周期和具有第二功率电平的第二周期的输出处产生多电平RF功率波形。具有电连接到RF电源的输出的电输入的RF等离子体源在第一周期期间产生具有第一RF功率电平的至少第一RF等离子体，以及在第一周期期间产生具有第二RF功率电平的第二RF等离子体第二阶段。具有电连接到压板的输出的偏置电压电源产生足以将等离子体中的离子吸引到基板用于等离子体处理的偏压电压波形。

8. 发明申请

US20110000896A1 SYSTEM AND METHOD FOR SELECTIVELY CONTROLLING ION COMPOSITION OF ION SOURCES 有权
标题翻译：用于选择性地控制离子源组成的系统和方法
公开(公告)号：US20110000896A1
公开(公告)日：2011-01-06
申请号：US12496080
申请日：2009-07-01
申请人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
发明人： Kamal Hadidi , Rajesh Dorai , Bernard G. Lindsay , Vikram Singh , George D. Papasouliotis
IPC分类号： H05H1/34 , H01L21/465
CPC分类号： C23C14/48 , H01J37/32412 , H01J37/32935
摘要： A method is disclosed for adjusting the composition of plasmas used in plasma doping, plasma deposition and plasma etching techniques. The disclosed method enables the plasma composition to be controlled by modifying the energy distribution of the electrons present in the plasma. Energetic electrons are produced in the plasma by accelerating electrons in the plasma using very fast voltage pulses. The pulses are long enough to influence the electrons, but too fast to affect the ions significantly. Collisions between the energetic electrons and the constituents of the plasma result in changes in the plasma composition. The plasma composition can then be optimized to meet the requirements of the specific process being used. This can entail changing the ratio of ion species in the plasma, changing the ratio of ionization to dissociation, or changing the excited state population of the plasma.
摘要翻译：公开了一种用于调节用于等离子体掺杂，等离子体沉积和等离子体蚀刻技术的等离子体的组成的方法。所公开的方法使得能够通过修改存在于等离子体中的电子的能量分布来控制等离子体组成。通过使用非常快的电压脉冲加速等离子体中的电子，在等离子体中产生能量电子。脉冲长度足以影响电子，但是太快而不能显着影响离子。能量电子与等离子体成分之间的碰撞导致等离子体组成的变化。然后可以优化等离子体组成以满足所使用的具体方法的要求。这可能需要改变等离子体中的离子种类的比例，改变离子化与解离的比例，或改变等离子体的激发态群体。

9. 发明申请

US20100062547A1 TECHNIQUE FOR MONITORING AND CONTROLLING A PLASMA PROCESS WITH AN ION MOBILITY SPECTROMETER 有权
标题翻译：用离子移动光谱仪监测和控制等离子体工艺的技术
公开(公告)号：US20100062547A1
公开(公告)日：2010-03-11
申请号：US12556592
申请日：2009-09-10
申请人： Kamal Hadidi , Bernard G. Lindsay
发明人： Kamal Hadidi , Bernard G. Lindsay
IPC分类号： H01L21/66 , C23C16/52 , C23F1/08
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源以及包括离子迁移谱仪的监测系统，该离子迁移谱仪被配置为监测等离子体的状态。还提供了一种监测方法，其包括在等离子体处理装置的处理室中产生等离子体，在工作室中的工作台上支撑工件，并用离子迁移谱仪监测等离子体的状态。

10. 发明授权

US08344318B2 Technique for monitoring and controlling a plasma process with an ion mobility spectrometer 有权
标题翻译：用离子迁移谱仪监测和控制等离子体工艺的技术
公开(公告)号：US08344318B2
公开(公告)日：2013-01-01
申请号：US12556592
申请日：2009-09-10
申请人： Kamal Hadidi , Bernard G. Lindsay
发明人： Kamal Hadidi , Bernard G. Lindsay
IPC分类号： H01L21/66
CPC分类号： H01J37/32422 , H01J37/32935
摘要： A plasma processing apparatus includes a process chamber, a platen positioned in the process chamber for supporting a workpiece, a source configured to generate a plasma in the process chamber, and a monitoring system including an ion mobility spectrometer configured to monitor a condition of the plasma. A monitoring method including generating a plasma in a process chamber of a plasma processing apparatus, supporting a workpiece on a platen in the process chamber, and monitoring a condition of the plasma with an ion mobility spectrometer is also provided.
摘要翻译：等离子体处理装置包括处理室，位于处理室中的用于支撑工件的压板，被配置为在处理室中产生等离子体的源以及包括离子迁移谱仪的监测系统，该离子迁移谱仪被配置为监测等离子体的状态。还提供了一种监测方法，其包括在等离子体处理装置的处理室中产生等离子体，在工作室中的工作台上支撑工件，并用离子迁移谱仪监测等离子体的状态。

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