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21. 发明授权

US06830623B2 Method of liquid deposition by selection of liquid viscosity and other precursor properties 失效
标题翻译：通过选择液体粘度和其他前体性质进行液体沉积的方法
公开(公告)号：US06830623B2
公开(公告)日：2004-12-14
申请号：US10096893
申请日：2002-03-12
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B65G100
CPC分类号： C23C18/1216 , C23C18/1291 , C23C18/14 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L21/31691
摘要： A plurality of liquids, the flow of each controlled by a volumetric flowrate controller, are mixed in a mixer to form a final precursor that is misted and then deposited on a substrate. A physical property of precursor liquid is adjusted by adjusting the volumetric flowrate controllers, so that when precursor is applied to substrate and treated, the resulting thin film of solid material has a smooth and planar surface. Typically the physical property is the viscosity of the precursor, which is selected to be relatively low, in the range of 1-2 centipoise.
摘要翻译：将多个液体，每个由体积流量控制器控制的流量在混合器中混合以形成被雾化并随后沉积在基底上的最终前体。通过调节体积流量控制器来调节前体液体的物理性质，使得当将前体施加到基底并进行处理时，所得到的固体材料薄膜具有平滑和平坦的表面。通常物理性质是前体的粘度，其被选择为相对较低，在1-2厘泊的范围内。

22. 发明授权

US06448190B1 Method and apparatus for fabrication of integrated circuit by selective deposition of precursor liquid 有权
标题翻译：通过选择性沉积前体液体制造集成电路的方法和装置
公开(公告)号：US06448190B1
公开(公告)日：2002-09-10
申请号：US09316917
申请日：1999-05-21
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： H01L2100
CPC分类号： H01L21/316 , H01L21/3144 , H01L2924/0002 , H01L2924/00
摘要： A thin film of solid material is selectively formed during fabrication of an integrated circuit by applying a liquid precursor to a substrate having a first surface and a second surface and treating the liquid precursor. The first surface has different physical properties than the second surface such that a solid thin film forms on the first surface but does not form on the second surface. The substrate is washed after formation of said solid thin film to remove any residues of said liquid from the second substrate surface.
摘要翻译：通过将液体前体施加到具有第一表面和第二表面的基底并处理液体前体，在制造集成电路期间选择性地形成固体材料薄膜。第一表面具有与第二表面不同的物理性质，使得在第一表面上形成固体薄膜，但不形成在第二表面上。在形成所述固体薄膜之后洗涤底物以从第二基材表面除去所述液体的任何残余物。

23. 发明授权

US6143063A Misted precursor deposition apparatus and method with improved mist and mist flow 有权
公开(公告)号：US6143063A
公开(公告)日：2000-11-07
申请号：US128058
申请日：1998-08-03
申请人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Carlos A. Paz de Araujo
IPC分类号： B05D7/00 , B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L27/115 , H01L39/24 , H01L41/24 , H05K3/10 , C09D5/00
CPC分类号： H01L21/31691 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/1291 , C23C18/14 , C23C26/02 , C23C8/10 , C30B7/00 , C30B7/005 , H01L21/02197 , H01L21/02282 , H01L21/02348 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H05K3/105 , Y10S427/101
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A liquid precursor is misted by ultrasonic or venturi apparatus, to produce a colloidal mist. The mist is generated, allowed to settle in a buffer chamber, filtered through a system up to 0.01 micron, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.

24. 发明授权

US5962085A Misted precursor deposition apparatus and method with improved mist and mist flow 失效
标题翻译：雾化前体沉积装置和方法具有改善的雾气流
公开(公告)号：US5962085A
公开(公告)日：1999-10-05
申请号：US610330
申请日：1996-03-04
申请人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
发明人： Shinichiro Hayashi , Larry D. McMillan , Masamichi Azuma , Carlos A. Paz de Araujo
IPC分类号： B05D1/00 , B05D3/04 , B05D3/06 , B05D7/24 , C23C8/10 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/31 , H01L21/314 , H01L21/316 , H01L27/115 , H01L39/24 , H01L41/24 , H05K3/10 , C23C8/00
CPC分类号： H01L21/02197 , B05D1/00 , B05D1/60 , B05D3/0493 , B05D3/062 , B05D3/065 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/12 , C23C18/1216 , C23C18/1287 , C23C18/14 , C23C26/02 , C23C8/10 , C30B29/68 , C30B7/00 , C30B7/005 , H01L21/02282 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/314 , H01L28/55 , H01L41/1871 , H05K3/105
摘要： A substrate is located within a deposition chamber, the substrate defining a substrate plane. A barrier plate is disposed in spaced relation above the substrate and substantially parallel thereto, the area of said barrier plate in a plane parallel to said substrate being substantially equal to said area of said substrate in said substrate plane, i.e. within 10% of said substrate area. The barrier plate has a smoothness tolerance of 5% of the average distance between said barrier plate and said substrate. A mist is generated, allowed to settle in a buffer chamber, filtered through a 1 micron filter, and flowed into the deposition chamber between the substrate and barrier plate to deposit a liquid layer on the substrate. The liquid is dried to form a thin film of solid material on the substrate, which is then incorporated into an electrical component of an integrated circuit.
摘要翻译：衬底位于沉积室内，衬底限定衬底平面。阻挡板以与衬底相对的基本平行的方式设置成隔开关系，所述阻挡板在平行于所述衬底的平面中的面积基本上等于所述衬底平面中所述衬底的所述面积，即在所述衬底的10％内区。阻挡板具有所述阻挡板和所述基板之间的平均距离的5％的平滑度公差。产生雾，允许沉淀在缓冲室中，通过1微米过滤器过滤，并流入基板和阻挡板之间的沉积室，以在基板上沉积液体层。将液体干燥以在基板上形成固体材料的薄膜，然后将其并入集成电路的电气部件中。

25. 发明授权

US5849071A Liquid source formation of thin films using hexamethyl-disilazane 失效
标题翻译：使用六甲基二硅氮烷的液体源形成薄膜
公开(公告)号：US5849071A
公开(公告)日：1998-12-15
申请号：US876304
申请日：1997-06-16
申请人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
发明人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , C09D7/12 , C09K15/32
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.
摘要翻译：在溶剂如二甲苯/甲基乙基酮和少量六甲基二硅氮烷中，包含若干金属2-乙基己酸酯如锶，钽和2-乙基己酸铋的前体液体。将液体干燥，烘烤和退火，以在基底上形成层状超晶格材料（例如钽酸锶锶）的薄膜。

26. 发明授权

US5846597A Liquid source formation of thin films using hexamethyl-disilazane 失效
公开(公告)号：US5846597A
公开(公告)日：1998-12-08
申请号：US876305
申请日：1997-06-16
申请人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
发明人： Gary F. Derbenwick , Larry D. McMillan , Narayan Solayappan , Michael C. Scott , Carlos A. Paz de Araujo , Shinichiro Hayashi
IPC分类号： C23C18/12 , H01L21/314 , H01L21/316 , B05D5/12
CPC分类号： H01L21/31691 , C23C18/1216 , C23C18/1225
摘要： A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a xylenes/methyl ethyl ketone solvent is prepared, a substrate is placed within a vacuum deposition chamber, a small amount of hexamethyl-disilazane is added to the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate. Then an integrated circuit is completed to include at least a portion of the layered superlattice material film in a component of the integrated circuit.

27. 发明授权

US5759923A Method and apparatus for fabricating silicon dioxide and silicon glass layers in integrated circuits 失效
标题翻译：用于在集成电路中制造二氧化硅和硅玻璃层的方法和装置
公开(公告)号：US5759923A
公开(公告)日：1998-06-02
申请号：US615806
申请日：1996-03-14
申请人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
发明人： Larry D. McMillan , Michael C. Scott , Carlos A. Paz de Araujo , Tatsuo Otsuki , Shinichiro Hayashi
IPC分类号： B05D1/00 , B05D3/04 , B05D7/24 , C23C16/44 , C23C16/448 , C23C16/455 , C23C16/46 , C23C16/48 , C23C16/52 , C23C18/12 , C23C18/14 , C23C26/02 , C30B7/00 , H01L21/02 , H01L21/314 , H01L21/316 , H01L27/115 , H01L41/24 , H05K3/10 , H01L21/00
CPC分类号： H01L21/316 , B05D1/00 , B05D1/60 , B05D3/0493 , C23C16/4412 , C23C16/4486 , C23C16/45561 , C23C16/4558 , C23C16/46 , C23C16/482 , C23C16/52 , C23C18/1212 , C23C18/1287 , C23C18/14 , C23C26/02 , C30B29/68 , C30B7/00 , H01L21/314 , H01L21/31691 , H01L27/11502 , H01L28/56 , H01L28/60 , H01L41/316 , H01L28/55 , H05K3/105
摘要： A precursor liquid comprising silicon in a xylenes solvent is prepared, a substrate is placed within a vacuum deposition chamber, the precursor liquid is misted, and the mist is flowed into the deposition chamber while maintaining the chamber at ambient temperature to deposit a layer of the precursor liquid on the substrate. The liquid is dried, baked, and annealed to form a thin film of silicon dioxide or silicon glass on the substrate. Then an integrated circuit is completed to include at least a portion of the silicon dioxide or silicon glass layer as an insulator for an electronic device in the integrated circuit.
摘要翻译：制备在二甲苯溶剂中包含硅的前体液体，将基底放置在真空沉积室内，使前体液体雾化，并将雾流入沉积室，同时将室保持在环境温度以沉积一层前体液体在基底上。将液体干燥，烘烤和退火以在基底上形成二氧化硅或硅玻璃的薄膜。然后，完成集成电路以将至少一部分二氧化硅或硅玻璃层作为集成电路中的电子器件的绝缘体。

28. 发明授权

US06541375B1 DC sputtering process for making smooth electrodes and thin film ferroelectric capacitors having improved memory retention 失效
标题翻译：用于制造平滑电极的DC溅射工艺和具有改善的记忆保持力的薄膜铁电电容器
公开(公告)号：US06541375B1
公开(公告)日：2003-04-01
申请号：US09128249
申请日：1998-08-03
申请人： Shinichiro Hayashi , Koji Arita
发明人： Shinichiro Hayashi , Koji Arita
IPC分类号： H01L2144
CPC分类号： H01L28/75 , C23C14/08 , H01L21/2855 , H01L28/55 , H01L28/60
摘要： A ferroelectric thin film capacitor has smooth electrodes permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces are produced by DC reactive sputtering.
摘要翻译：铁电薄膜电容器具有平滑的电极，允许相对较强的极化，较少的疲劳和较少的压印，因为铁电电容器老化。光滑的电极表面由直流反应溅射制成。

29. 发明授权

US08671528B2 Assembling construction of clip to mountable member 有权
标题翻译：夹子安装构件的组装
公开(公告)号：US08671528B2
公开(公告)日：2014-03-18
申请号：US13377506
申请日：2010-05-25
申请人： Shinichiro Hayashi
发明人： Shinichiro Hayashi
IPC分类号： A44B1/04
CPC分类号： F16B5/0657 , F16B5/065 , F16B21/086
摘要： An assembling construction assembles a mountable member to a support member by holding a head portion of a clip on a mounting seat of the mountable member while securely fitting a leg portion in a mounting hole in the support member, the mounting seat has an instruction groove and guide grooves, the head portion of the clip has a first flange portion beam-like strip-shaped elastic pieces and which are brought into press contact with end portions of the guide grooves and stopper projections which are adapted to be brought into engagement with the end portions of the guide grooves when the clip is attempted to be shifted largely relative to the mounting seat.
摘要翻译：组装结构通过将夹子的头部保持在可安装构件的安装座上，同时将腿部牢固地安装在支撑构件的安装孔中，将安装构件组装到支撑构件上，安装座具有指示槽和引导槽，夹子的头部具有第一凸缘部分的束状条状弹性片，并与引导槽和止动突起的端部压接，这些端部适于与端部当试图夹子相对于安装座大幅偏移时，引导槽的部分。

30. 发明授权

US08492718B2 Measurement apparatus and measurement method 有权
标题翻译：测量仪器及测量方法
公开(公告)号：US08492718B2
公开(公告)日：2013-07-23
申请号：US13485686
申请日：2012-05-31
申请人： Yuichi Ogawa , Shinichiro Hayashi , Eiji Kato
发明人： Yuichi Ogawa , Shinichiro Hayashi , Eiji Kato
IPC分类号： G01T1/17 , G01T7/00
CPC分类号： G01N21/3581 , G01N21/95692 , H01L31/0232 , H01L31/101
摘要： There is provided a measuring apparatus including a space arrangement structure that includes space regions surrounded by conductors in a plane, an electromagnetic wave emitter that emits electromagnetic waves towards an object held by the space arrangement structure, and an electromagnetic wave detector that measures the electromagnetic waves that have passed through the space arrangement structure. Here, characteristics of the object are measured by measuring the electromagnetic waves that have passed through the space arrangement structure. The electromagnetic waves emitted from the electromagnetic wave emitter towards the space arrangement structure are incident on the plane containing the space regions at an angle, and the electromagnetic waves that have passed through the space arrangement structure are measured.
摘要翻译：提供了一种测量装置，包括：空间布置结构，包括由平面内的导体包围的空间区域;朝向由所述空间布置结构保持的物体发射电磁波的电磁波发射器;以及测量电磁波的电磁波检测器已经通过了空间布置结构。这里，通过测量已经通过空间排列结构的电磁波来测量物体的特性。从电磁波发射器朝向空间配置结构发射的电磁波以一定角度入射在包含空间区域的平面上，并且测量已经通过空间布置结构的电磁波。

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