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    • 21. 发明授权
    • Integrated circuit for use with variable voltages
    • 用于可变电压的集成电路
    • US4104546A
    • 1978-08-01
    • US769431
    • 1977-02-17
    • Hartmut Seiler
    • Hartmut Seiler
    • H01L27/04G01R19/165H01L21/822H03K17/30H03K19/0175H03K5/20H03K19/40
    • G01R19/16576H03K17/30H03K19/017581
    • To reliably ensure response of integrated circuits having threshold inputs, while rejecting interference and noise pulses, the input stage is formed with a plurality of resistors which can be selectively vaporized or burned off to match the input response of the threshold circuit to any input operating voltage without requiring the use of discrete, replaceable input resistors. Preferably, the input voltages are conducted to voltage dividers which have resistors which can be selectively removed by evaporation or burning off. The circuit can also have inverters bridged by a vaporizable shunt to respond to voltages of selected polarity or provide an output of selected polarity.
    • 为了可靠地确保具有阈值输入的集成电路的响应,在抑制干扰和噪声脉冲的同时,输入级形成有多个电阻器,其可以选择性地蒸发或烧掉以将阈值电路的输入响应与任何输入工作电压 而不需要使用离散的,可更换的输入电阻。 优选地,输入电压被传导到具有电阻器的分压器,电阻器可以通过蒸发或燃烧而被选择性地去除。 电路还可以具有由可汽化分流器桥接的逆变器以响应所选极性的电压或提供所选极性的输出。
    • 22. 发明授权
    • Method and apparatus for selective burnout trimming of integrated
circuit units
    • 用于集成电路单元的选择性烧尽修整的方法和装置
    • US3930304A
    • 1976-01-06
    • US416216
    • 1973-11-15
    • Helmut KellerHartmut Seiler
    • Helmut KellerHartmut Seiler
    • H01C17/22C08L69/00H01L21/822H01L27/00H01L27/01H01L27/04H01L27/08B01J17/00
    • H01L27/0802C08L69/00H01L27/00Y10S148/02Y10S148/055
    • Supplementary metallized connection parts short-circuiting or connecting incremental sub-components of one or more circuit elements of an integrated circuit are laid down on the semiconductor slice at the same time as the usual metallized connection pattern is made. The components associated with the incremental sub-components are measured to determine the program of adjustment and selective burnout of the supplementary connections. The selective burnout is carried out by applying a sequence of pulses to the segments to be burned out under monitoring by a measuring circuit, which blocks the delivery of further pulses, either immediately or after one or a few more pulses, when the measuring circuit detects the opening of the connection. The process is preferably carried out on integrated circuits before the semiconductor slice on which they are made is separated into individual circuit units. The pulses are applied in sequences in which individual pulses or series of pulses have increasing amplitude and/or pulse duration and/or pulse frequency.
    • 在制造通常的金属化连接图案的同时,将辅助金属化连接部件短路或连接集成电路的一个或多个电路元件的增量子部件放置在半导体薄片上。 测量与增量子组件相关联的组件,以确定辅助连接的调整程序和选择性倦怠。 选择性倦怠是通过在测量电路监视下对待烧毁的片段施加脉冲序列来进行的,该测量电路在测量电路检测到时立即或在一个或几个脉冲之后立即阻塞另外的脉冲的传送 连接的打开。 该方法优选在集成电路之前在其制造的半导体片分离成各个电路单元之前进行。 以单个脉冲或一系列脉冲具有增加的幅度和/或脉冲持续时间和/或脉冲频率的顺序施加脉冲。
    • 27. 发明授权
    • Overheating protection device for a control device in gas discharge lamps
    • 用于保护气体放电灯的控制装置免受过热的装置
    • US06201357B1
    • 2001-03-13
    • US09355129
    • 1999-10-13
    • Hartmut SeilerRobert Kern
    • Hartmut SeilerRobert Kern
    • G05F100
    • F21V25/10H05B41/2856Y02B20/186
    • An arrangement for protecting a control device for gas discharge lamps from overtemperature contains a control device and a DC/DC converter. Regulation of the power conveyed to the gas discharge lamp is performed. The output value of the power controller (to be considered the manipulated variable) and the input value of the power controller (to be considered the setpoint) are ascertained by way of the control device. The ratio of these two values (manipulated variable to setpoint) is determined. The value determined for that ratio can be used to limit the output power of the control device. The control device may contains a microcontroller, and the controller is provided as a program in the microcontroller and is implemented as software in order to limit the output power of the control device.
    • 用于保护气体放电灯的控制装置免受过温的装置包括控制装置和DC / DC转换器。 执行输送到气体放电灯的功率的调节。 通过控制装置确定功率控制器(被视为操纵变量)的输出值和功率控制器的输入值(被认为是设定值)。 确定这两个值(操纵变量与设定值)的比率。 为该比例确定的值可用于限制控制装置的输出功率。 控制装置可以包含微控制器,并且控制器作为微控制器中的程序提供,并且被实现为软件以便限制控制装置的输出功率。
    • 29. 发明授权
    • Integrated circuit amplifier for low input voltages
    • 用于低输入电压的集成电路放大器
    • US4479095A
    • 1984-10-23
    • US398350
    • 1982-07-15
    • Hartmut Seiler
    • Hartmut Seiler
    • H03F3/45
    • H03F3/45071H03F3/45479
    • An amplifier of integrated circuit construction for operating on input voltages less than 10 mV has a signal amplifier which is associated with a regulation loop for regulating out static offset voltages and slow offset voltage drifts. The output of the signal amplifier (1) is connected to the input of a switching amplifier (2) and to the output of a third amplifier (4). At the output of the switching amplifier, which is connected to the input of the third amplifier (4), a capacitor (3) is connected which has its other terminal connected to ground. An output coupling amplifier (5) can aid the switching amplifier (2) in its switching function.
    • 用于在小于10 mV的输入电压下工作的集成电路结构的放大器具有与用于调节静态偏移电压和缓慢偏移电压漂移的调节回路相关联的信号放大器。 信号放大器(1)的输出端连接到开关放大器(2)的输入端和第三放大器(4)的输出端。 在连接到第三放大器(4)的输入端的开关放大器的输出端连接有另一个端子连接到地的电容器(3)。 输出耦合放大器(5)可以帮助开关放大器(2)处于其开关功能。
    • 30. 发明授权
    • Overvoltage protected integrated circuit network, to control current
flow through resistive or inductive loads
    • 过电压保护集成电路网络,以控制电流或电阻负载的电流
    • US4186418A
    • 1980-01-29
    • US823287
    • 1977-08-10
    • Hartmut Seiler
    • Hartmut Seiler
    • H02H9/04H02H7/20H03K17/0814H03K17/082H02H3/20
    • H03K17/08146H03K17/0826
    • The main switching transistor 11 is serially connected between a load 12, 12' and a source of supply 13, R. An auxiliary transistor 15, the base of which is controlled through a voltage sensing device, for example a Zener diode 18 has its main switching path connected to the base of the main switching transistor 11 to control the main switching transistor 11 to become conductive in case of overvoltage, sensed by breakdown of the Zener diode 18. If the load is inductive, an additional inductive turn-off current bypass transistor 22, 22' can be provided (FIG. 2, 3), rendered conductive when overvoltage of an inductive kick is sensed, to bypass turn-off current around the main semiconductor switching transistor, or, in an alternative connection, to control the main switching transistor to again become conductive and itself bypass the inductive turn-off current, so that current flow due to overvoltages, or inductive turn-off current will be conducted by semiconductors operated under conditions of controlled conduction.
    • 主开关晶体管11串联连接在负载12,12'和电源13之间R.辅助晶体管15的基极通过电压感测装置例如齐纳二极管18控制,其主要 连接到主开关晶体管11的基极的开关路径,以便在过压的情况下控制主开关晶体管11变得导通,由齐纳二极管18的击穿感测。如果负载是感性的,则附加的感应关断电流旁路 可以提供晶体管22,22'(图2,3),当检测到感应脚的过电压时,导通,以绕过主半导体开关晶体管周围的截止电流,或者作为替代连接来控制 主开关晶体管再次导通并且本身旁路感应关断电流,使得由过电压引起的电流或感应关断电流将由在条件下操作的半导体进行 离子控制传导。