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21. 发明申请

US20090026565A1 Optical Module 审中-公开
标题翻译：光模块
公开(公告)号：US20090026565A1
公开(公告)日：2009-01-29
申请号：US12223541
申请日：2007-02-02
申请人： Arihide Noda , Mikio Oda , Takashi Ohtsuka , Hisaya Takahashi , Hikaru Kouta , Jun Sakai
发明人： Arihide Noda , Mikio Oda , Takashi Ohtsuka , Hisaya Takahashi , Hikaru Kouta , Jun Sakai
IPC分类号： H01L31/0232 , C12Q1/68 , G01J1/00
CPC分类号： G02B6/4214 , G02B6/4232 , G02B6/4292 , H01L25/167 , H01L31/02002 , H01L2224/16225 , H01L2224/48091 , H01L2224/49109 , H01L2224/73253 , H01L2924/15192 , H01L2924/19105 , H01L2924/30107 , H01L2924/3011 , H05K1/184 , H05K3/3405 , H05K3/403 , H05K2201/10121 , H05K2201/10674 , H01L2924/00014 , H01L2924/00
摘要： The present invention includes: photoelectric conversion element 103 that converts electrical signals into optical signals and optical signals into electrical signals; and optical communication LSI 102 electrically connected to photoelectric conversion element 103. Also, the present invention includes electrical wiring substrate 101 including a plurality of electrodes 201 and 202 on which photoelectric conversion element 103 and optical communication LSI 102 are mounted by flip-chip attachment and a plurality of wiring layers 101a, 101b and 101c electrically connecting respective electrodes 201 and 202, wiring layers 101a, 101b and 101c being provided at an upper surface, a lower surface and an inner portion of electrical wiring substrate 101, respectively. Also, electrodes 201 and 202 to which photoelectric conversion element 103 is bonded are provided at a side surface of electrical wiring substrate 101.
摘要翻译：本发明包括：将电信号转换为光信号和光信号的电信号的光电转换元件103; 以及与光电转换元件103电连接的光通信LSI 102.另外，本发明包括电子布线基板101，其包括多个电极201和202，其上通过倒装芯片附接安装光电转换元件103和光通信LSI102，电连接各个电极201和202的多个布线层101a，101b和101c，布线层101a，101b和101c分别设置在电布线基板101的上表面，下表面和内部。而且，在电配线基板101的侧面设置与光电转换元件103接合的电极201和202。

22. 发明申请

US20080248388A1 ELECTRODE FOR ELECTROCHEMICAL ELEMENT AND ELECTROCHEMICAL ELEMENT USING THE SAME 审中-公开
标题翻译：电化学元件用电极及其电化学元件
公开(公告)号：US20080248388A1
公开(公告)日：2008-10-09
申请号：US12098126
申请日：2008-04-04
申请人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
发明人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
IPC分类号： H01M4/24 , H01M4/38
CPC分类号： H01M4/70 , H01M4/0404 , H01M4/134 , H01M10/0525 , H01M2004/027
摘要： The invention presents an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising a current collector forming a concave portion and a convex portion at least on one side, and a columnar body including an active material formed on the convex portion of the current collector, in which the columnar body covers at least a part of respective sides of the convex portion. By this configuration, an electrode for an electrochemical element of long life and excellent reliability is realized.
摘要翻译：本发明提出了一种用于电化学元件的用于可逆地插入和提取锂离子的电极，包括至少在一侧形成凹部和凸部的集电体，以及包括形成在凸部上的活性材料的柱状体柱状体覆盖凸部的各侧的至少一部分的集电体。通过这种构造，实现了长寿命和高可靠性的电化学元件用电极。

23. 发明申请

US20080248189A1 MANUFACTURING METHOD OF ELECTRODE FOR ELECTROCHEMICAL ELEMENT 审中-公开
标题翻译：电化学元件电极的制造方法
公开(公告)号：US20080248189A1
公开(公告)日：2008-10-09
申请号：US12061479
申请日：2008-04-02
申请人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
发明人： Takashi Ohtsuka , Kaoru Nagata , Hideharu Takezawa , Shoichi Imashiku
IPC分类号： H01M4/04
CPC分类号： H01M4/70 , H01M4/0423 , H01M4/131 , H01M4/134 , H01M4/1391 , H01M4/1395 , H01M4/364 , H01M10/0525
摘要： The invention presents a manufacturing method of an electrode for an electrochemical element for inserting and extracting a lithium ion reversibly, comprising; forming a concave portion and a convex portion at least on one side of a current collector, preparing a raw material containing a element for composing an active material, introducing a specified supply amount of the raw material and a carrier gas into a film forming device to form a plasma, and injecting the plasma of the raw material on the current collector, in which the active material is grown on the convex portion of the current collector, and a columnar body is formed by covering at least a part of respective sides of the convex portion.
摘要翻译：本发明提出了用于电化学元件的电极的制造方法，用于可逆地插入和提取锂离子，包括：在集电体的至少一侧形成凹部和凸部，准备含有构成活性物质的元素的原料，将规定的原料和载气的供给量引入成膜装置，形成等离子体，并且将原料的等离子体注入到集电体上，其中活性材料在集电体的凸部上生长，并且通过覆盖所述集电体的两侧的至少一部分来形成柱状体凸部。

24. 发明授权

US07394090B2 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US07394090B2
公开(公告)日：2008-07-01
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L47/00
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

25. 发明申请

US20070210362A1 Non-volatile memory and the fabrication method 有权
标题翻译：非易失性存储器及其制造方法
公开(公告)号：US20070210362A1
公开(公告)日：2007-09-13
申请号：US11798364
申请日：2007-05-14
申请人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
发明人： Kiyoyuki Morita , Noboru Yamada , Akihito Miyamoto , Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： H01L27/11
CPC分类号： G11C13/0004 , G11C14/009 , H01L27/1104 , H01L27/24 , H01L45/04 , H01L45/145
摘要： A non-volatile memory comprising: a first substrate (100) and a second substrate (110), the first substrate (100) having a plurality of switching elements (4) arranged in matrix, and a plurality of first electrodes (18) connected to the switching element (4), the second substrate (110) having a conductive film (32), and a recording layer (34) whose resistance value changes by application of an electric pulse, wherein the plurality of first electrodes (18) are integrally covered by the recording layer (34), the recording layer (34) thereby being held between the plurality of first electrodes (18) and the conductive film (32); the first substrate (100) further comprising a second electrode (22), the second electrode (22) being electrically connected to the conductive film (32), the voltage of which is maintained at a set level while applying current to the recording layer (34). This non-volatile memory achieves high integration at low cost.
摘要翻译：一种非易失性存储器，包括：第一基板（100）和第二基板（110），所述第一基板（100）具有布置成矩阵的多个开关元件（4），并且多个第一电极（18）被连接至所述开关元件（4），所述第二基板（110）具有导电膜（32）以及其电阻值通过施加电脉冲而改变的记录层（34），其中所述多个第一电极（18）为由记录层（34）整体覆盖，记录层（34）由此保持在多个第一电极（18）和导电膜（32）之间; 所述第一基板（100）还包括第二电极（22），所述第二电极（22）电连接到所述导电膜（32），其电压保持在设定电平，同时向所述记录层施加电流（ 34）。这种非易失性存储器以低成本实现高集成度。

26. 发明申请

US20070131997A1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US20070131997A1
公开(公告)日：2007-06-14
申请号：US11522982
申请日：2006-09-19
申请人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
发明人： Takashi Ohtsuka , Takashi Nakabayashi , Yoshiyuki Shibata
IPC分类号： H01L29/94
CPC分类号： H01L28/75 , H01L21/02181 , H01L21/02189 , H01L21/0228 , H01L21/31641 , H01L21/31645
摘要： A semiconductor device includes a capacitor formed by successively stacking a lower electrode, a capacitor dielectric film and an upper electrode on a substrate. The lower electrode includes a first conducting layer and a second conducting layer formed on the first conducting layer and having higher resistivity than the first conducting layer, and the capacitor dielectric film is formed so as to be in contact with the second conducting layer of the lower electrode.
摘要翻译：半导体器件包括通过在衬底上连续堆叠下电极，电容器电介质膜和上电极而形成的电容器。下电极包括形成在第一导电层上并具有比第一导电层更高的电阻率的第一导电层和第二导电层，并且电容器电介质膜形成为与下部电极的第二导电层接触电极。

27. 发明授权

US07206217B2 Non-volatile flip flop 失效
标题翻译：非易失性触发器
公开(公告)号：US07206217B2
公开(公告)日：2007-04-17
申请号：US10754058
申请日：2004-01-09
申请人： Takashi Ohtsuka , Hideyuki Tanaka
发明人： Takashi Ohtsuka , Hideyuki Tanaka
IPC分类号： G11C11/40
CPC分类号： G11C14/0072 , G11C8/16 , G11C13/0004 , G11C14/009 , H01L21/28291 , H01L27/101 , H01L27/11 , H03K3/356008
摘要： A non-volatile flip flop according to the invention comprising: a flip flop section (4) having a pair of memory nodes (5, 6) for storing a pair of inverse logic data elements; and a pair of non-volatile resistance change elements (11, 12) which are connected to the pair of memory nodes (5, 6) through switching elements (9, 10) respectively and the resistances of which vary so as to be retainable, wherein, in a store operation, the resistances of the pair of non-volatile resistance change elements (11, 12) can be varied according to the respective potentials of the pair of memory nodes (5, 6) and, in a recall operation, the pair of memory nodes (5, 6) can be placed at potentials respectively according to the difference in resistance between the pair of non-volatile resistance change elements (11, 12).
摘要翻译：根据本发明的非易失性触发器包括：触发器部分（4），具有用于存储一对反逻辑数据元素的一对存储器节点（5,6）; 以及一对非易失性电阻变化元件（11,12），它们分别通过开关元件（9,10）连接到一对存储器节点（5,6），并且其电阻变化以便保持，其特征在于，在存储操作中，所述一对非易失性电阻变化元件（11,12）的电阻可以根据所述一对存储器节点（5,6）的各自的电位而变化，并且在回调操作中，可以根据所述一对非易失性电阻变化元件（11,12）之间的电阻差分别将所述一对存储器节点（5,6）置于电位上。

28. 发明授权

US06781865B2 Nonvolatile selector, and integrated circuit device 失效
标题翻译：非易失选择器和集成电路器件
公开(公告)号：US06781865B2
公开(公告)日：2004-08-24
申请号：US10398737
申请日：2003-04-09
申请人： Takashi Ohtsuka , Kiyoyuki Morita
发明人： Takashi Ohtsuka , Kiyoyuki Morita
IPC分类号： G11C1122
CPC分类号： G11C11/22 , G11C8/10 , H03K17/693
摘要： A multiplexer includes first through fourth switching sections 10A through 10D in a pre-stage gate and each of the switching sections 10 includes a serial capacitor 3 and a FET 4. The serial capacitor 3 includes a ferroelectric capacitor 1 and a paraelectric capacitor 2 and an intermediate node of the serial capacitor 3 is connected to a gate electrode 8 of the FET 4. In a unit selector Use11 made up of the switching sections 10A and 10B, a voltage applied to the intermediate node 9 is distributed according to the difference between the capacitances of the two capacitors so that in the switching section 10A and 10B, the FETs 4 alternately turn ON and OFF according to the logical value, 1 or 0, of a selection signal D1. Accordingly, an operation state is stored in a nonvolatile state in the ferroelectric capacitor 1.
摘要翻译：多路复用器包括在前级栅极中的第一至第四开关部分10A至10D，并且每个开关部分10包括串联电容器3和FET 4.串联电容器3包括铁电电容器1和顺电电容器2和串联电容器3的中间节点连接到FET4的栅电极8.在由开关部分10A和10B组成的单元选择器Use11中，施加到中间节点9的电压根据两个电容器的电容，使得在开关部分10A和10B中，FET4根据选择信号D1的逻辑值1或0交替地导通和截止。因此，在强电介质电容器1中以非易失性状态存储操作状态。

29. 发明授权

US06639421B1 Measuring apparatus and method for measuring characteristic of solar cell 失效
标题翻译：用于测量太阳能电池特性的测量装置和方法
公开(公告)号：US06639421B1
公开(公告)日：2003-10-28
申请号：US09691130
申请日：2000-10-19
申请人： Takehito Yoshino , Takashi Ohtsuka
发明人： Takehito Yoshino , Takashi Ohtsuka
IPC分类号： G01R3126
CPC分类号： H02S50/10
摘要： A predetermined area of a photo-sensing surface of a solar cell is illuminated, and a voltage vs. current characteristic is measured. Note, the rest of the photo-sensing surface which is not illuminated is called a dark area. Next, in a dark state in which the photo-sensing surface is not illuminated, a dark characteristic of the solar cell is measured. The obtained dark characteristic is multiplied by a ratio of the area of the dark area to the area of the photo-sensing surface, thereby a dark characteristic of the dark area is calculated. Then, a difference characteristic between the measured voltage vs. current characteristic and the dark characteristic of the dark area is calculated. The difference characteristic is multiplied by a ratio of the area of the photo-sensing surface to the area of the illuminated portion, thereby a voltage vs. current characteristic of the solar cell in a state corresponding to that the entire area of the photo-sensing surface is illuminated at once is obtained.
摘要翻译：照射太阳能电池的感光面的规定面积，测定电压 - 电流特性。注意，未被照亮的光感测表面的其余部分称为暗区。接下来，在光敏表面不被照亮的暗状态下，测量太阳能电池的暗特性。所获得的暗特性乘以暗区的面积与感光面的面积的比值，由此计算暗区的暗特性。然后，计算测量的电压与电流特性之间的差异特性和黑暗区域的暗特性。差分特性乘以感光表面的面积与照射部分的面积的比率，从而在与感光面的整个面积相对应的状态下的太阳能电池的电压对电流特性立即照射表面。

30. 发明授权

US06541278B2 Method of forming film for semiconductor device with supercritical fluid 失效
标题翻译：用超临界流体形成半导体器件薄膜的方法
公开(公告)号：US06541278B2
公开(公告)日：2003-04-01
申请号：US09492350
申请日：2000-01-27
申请人： Kiyoyuki Morita , Takashi Ohtsuka , Michihito Ueda
发明人： Kiyoyuki Morita , Takashi Ohtsuka , Michihito Ueda
IPC分类号： C23C1606
CPC分类号： H01L29/513 , C23C16/409 , C23C16/4485 , H01L21/28167 , H01L21/28185 , H01L21/28194 , H01L21/28202 , H01L21/28291 , H01L21/31691 , H01L29/516 , H01L29/517 , H01L29/518
摘要： A semiconductor substrate is placed within a housing. By supplying organometallic complexes and carbon dioxide in a supercritical state into the housing, a BST thin film is formed on a platinum thin film, while at the same time, carbon compounds, which are produced when the BST thin film is formed are removed. The solubility of carbon compounds in the supercritical carbon dioxide is very high, and yet the viscosity of the supercritical carbon dioxide is low. Accordingly, the carbon compounds are removable efficiently from the BST thin film. An oxide or nitride film may also be formed by performing oxidation or nitriding at a low temperature using water in a supercritical or subcritical state, for example.
摘要翻译：将半导体衬底放置在壳体内。通过将超临界状态的有机金属配合物和二氧化碳供给到壳体中，在铂薄膜上形成BST薄膜，同时除去形成BST薄膜时产生的碳化合物。碳化合物在超临界二氧化碳中的溶解度非常高，而超临界二氧化碳的粘度低。因此，碳化合物可从BST薄膜有效地去除。氧化物或氮化物膜也可以通过使用例如超临界或亚临界状态的水在低温下进行氧化或氮化来形成。

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