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21. 发明授权

US06714833B2 Performance evaluation method for plasma processing apparatus 有权
标题翻译：等离子体处理装置的性能评估方法
公开(公告)号：US06714833B2
公开(公告)日：2004-03-30
申请号：US10033343
申请日：2001-11-02
申请人： Akira Nakano , Tadahiro Ohmi
发明人： Akira Nakano , Tadahiro Ohmi
IPC分类号： G06F1130
CPC分类号： H01J37/32082 , C23C16/505 , C23C16/52 , H01J37/32935
摘要： A plasma processing apparatus includes a plurality of plasma processing units. Each of the plasma processing units has a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit which matches the impedance between the radiofrequency generator and the plasma processing unit. The absolute value |&Dgr;RA| of the difference &Dgr;RA between the AC resistance RA0 at a time t0 and the AC resistance RA1 at a later time t1 and the absolute value |&Dgr;RB| of the difference &Dgr;RB between the AC resistance RB0 at the time t0 and the AC resistance RB1 at the later time t1 are maintained at a value less than an upper limit. Based on these values, whether or not the plasma processing apparatus which is reassembled or used at a user site maintains a required level of performance is evaluated.
摘要翻译：等离子体处理装置包括多个等离子体处理单元。每个等离子体处理单元具有等离子体激励电极，连接到等离子体激励电极的射频发生器和与射频发生器和等离子体处理单元之间的阻抗匹配的匹配电路。绝对值| DeltaRA | 在时间t0的交流电阻RA0与时间t1之后的交流电阻RA1与绝对值|ΔRB|之间的差值DeltaRA 在时刻t0的交流电阻RB0与后期时刻t1的交流电阻RB1之间的差值ΔRB保持在小于上限的值。基于这些值，评价在用户现场重新组装或使用的等离子体处理装置是否保持所需的性能水平。

22. 发明授权

US06274040B1 Apparatus for removing electrostatic charge from high resistivity liquid 失效
标题翻译：用于从高电阻率液体中去除静电荷的装置
公开(公告)号：US06274040B1
公开(公告)日：2001-08-14
申请号：US08811800
申请日：1997-03-06
申请人： Kenichi Mitsumori , Yasuhiko Kasama , Akira Nakano , Akira Abe , Tadahiro Ohmi
发明人： Kenichi Mitsumori , Yasuhiko Kasama , Akira Nakano , Akira Abe , Tadahiro Ohmi
IPC分类号： C02F148
CPC分类号： C02F1/48 , C02F2103/04 , Y10S210/90
摘要： There are provided a method and an apparatus for removing electrostatic charges from high resistivity liquid. An insulating film is formed on the surface of a conductive element which is in contact with the high resistivity liquid wherein the insulating film has such a thickness that a tunneling current may flow through the insulating film, thereby preventing the highly purified high resistivity liquid from being contaminated, as well as from becoming acid. Thus, objects to be treated with the high resistivity liquid become free of electrostatic charges without any contamination.
摘要翻译：提供了一种从高电阻率液体中去除静电电荷的方法和装置。在与高电阻率液体接触的导电元件的表面上形成绝缘膜，其中绝缘膜具有使隧道电流可以流过绝缘膜的厚度，从而防止高度纯化的高电阻率液体污染，以及变酸。因此，用高电阻率液体处理的物体没有静电电荷而没有任何污染。

23. 发明授权

US6148762A Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US6148762A
公开(公告)日：2000-11-21
申请号：US246245
申请日：1999-02-08
申请人： Koichi Fukuda , Sung Chul Kim , Akira Nakano
发明人： Koichi Fukuda , Sung Chul Kim , Akira Nakano
IPC分类号： H05H1/46 , C23C16/458 , C23C16/50 , C23C16/509 , C23F4/00 , H01L21/00 , H01L21/205 , H01L21/302 , H01L21/3065 , H01L21/31 , H01L21/687 , C23C16/00
CPC分类号： H01L21/68742 , C23C16/4581 , C23C16/4586 , C23C16/5096 , H01L21/67069 , H01L21/68757 , Y10S414/135
摘要： A plasma processing apparatus for stably and uniformly performing various kinds of processing by preventing unnecessary plasma discharge in the processing comprises a susceptor pin for supporting a substance to be processed, the susceptor pin being disposed to pass through a hole formed to a susceptor, projecting from the upper surface of the susceptor when the susceptor falls and falling by its own weight when the susceptor rises so as to be buried in the hole, and a guide for guiding the rising and falling directions of the susceptor pin, wherein the susceptor pin and the guide are composed of ceramics.
摘要翻译：一种用于通过在处理中防止不必要的等离子体放电来稳定均匀地执行各种处理的等离子体处理装置包括用于支撑被处理物质的基座销，所述基座销设置成穿过形成于基座的孔，当基座上升时，基座落下并且被埋在孔中时基座的上表面，以及用于引导基座销的上升和下降方向的引导件，其中，基座销和指南由陶瓷组成。

24. 发明授权

US5837559A Method of producing an electro-optical device 失效
标题翻译：电光装置的制造方法
公开(公告)号：US5837559A
公开(公告)日：1998-11-17
申请号：US745904
申请日：1996-11-07
申请人： Ken Kawahata , Akira Nakano , Hirofumi Fukui , Hiroyuki Hebiguchi , Kenji Yamamoto , Chisato Iwasaki
发明人： Ken Kawahata , Akira Nakano , Hirofumi Fukui , Hiroyuki Hebiguchi , Kenji Yamamoto , Chisato Iwasaki
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L27/1214
摘要： A method for producing an electro-optical device comprising a first photolithographic step of forming a transparent pixel electrode, a second photolithographic of forming a gate electrode and a gate wiring, a third photolithographic step of forming a contact holes in an insulator film leading to the pixel electrode and the gate wiring, a fourth photolithographic step of forming a source electrode and a drain electrode and a channel portion above the gate electrode, and a fifth photolithographic step of forming a contact hole in a passivation film and isolating the semiconductor active film below the source electrode, the drain electrode and the source wiring from other adjacent portions. The number of photolithographic steps can be reduced, to improve the yield and decrease the production cost, adjacent thin film transistors.
摘要翻译：一种用于制造电光装置的方法，包括形成透明像素电极的第一光刻步骤，形成栅电极的第二光刻和栅极布线;第三光刻步骤，在导致所述绝缘膜的绝缘膜中形成接触孔像素电极和栅极布线;在栅电极上方形成源电极和漏电极以及沟道部分的第四光刻步骤，以及在钝化膜中形成接触孔并将半导体活性膜隔离在第五光刻步骤的第五光刻步骤源电极，漏电极和源极布线。可以减少光刻步骤的数量，以提高相邻薄膜晶体管的产量并降低生产成本。

25. 发明授权

US5726077A Method of producing an electro-optical device 失效
标题翻译：电光装置的制造方法
公开(公告)号：US5726077A
公开(公告)日：1998-03-10
申请号：US459925
申请日：1995-06-02
申请人： Ken Kawahata , Akira Nakano , Hirofumi Fukui , Hiroyuki Hebiguchi , Kenji Yamamoto , Chisato Iwasaki
发明人： Ken Kawahata , Akira Nakano , Hirofumi Fukui , Hiroyuki Hebiguchi , Kenji Yamamoto , Chisato Iwasaki
IPC分类号： G02F1/136 , G02F1/1368 , H01L21/336 , H01L21/77 , H01L21/84 , H01L29/78 , H01L29/786
CPC分类号： H01L27/1214
摘要： A method for producing an electo-optical device including only five photolithographic steps, including a first photolithographic step for forming a gate electrode and gate wiring, a second photolithographic step for forming a semiconductor portion above the gate electrode, a third photolithographic step for forming a contact hole through the first insulator film to the gate wiring, a fourth photolithographic step for forming a source electrode, a source wiring and a drain electrode and then forming a channel portion above the gate electrode exposing said semiconductor active film and forming a transparent pixel electrode, and a fifth photolithographic step for forming a light-permeable opening above the transparent pixel electrode, and a contact hole for source wiring and gate wiring connection terminals.
摘要翻译：一种用于制造仅包括五个光刻步骤的电光器件的方法，包括用于形成栅电极和栅极布线的第一光刻步骤，用于在栅电极上形成半导体部分的第二光刻步骤，用于形成栅电极的第三光刻步骤接触孔穿过第一绝缘膜到栅极布线，第四光刻步骤，用于形成源电极，源极布线和漏极，然后在栅电极上方形成通道，暴露所述半导体有源膜并形成透明像素电极以及用于在透明像素电极上方形成透光性开口的第五光刻工序，以及用于源极配线和栅极配线连接端子的接触孔。

26. 发明授权

US5715527A Mobile communication device having an output power sensor succeeding a transmission filter 失效
标题翻译：具有传输滤波器后面的输出功率传感器的移动通信设备
公开(公告)号：US5715527A
公开(公告)日：1998-02-03
申请号：US506123
申请日：1995-07-24
申请人： Hiroyuki Horii , Masao Iwata , Tsuyoshi Miyazawa , Koichiro Shimizu , Toshikazu Yasuoka , Akira Nakano , Katsuhiko Gunji , Tomokazu Komazaki
发明人： Hiroyuki Horii , Masao Iwata , Tsuyoshi Miyazawa , Koichiro Shimizu , Toshikazu Yasuoka , Akira Nakano , Katsuhiko Gunji , Tomokazu Komazaki
IPC分类号： H03G3/20 , H03G3/30 , H03G5/16 , H04B7/26 , H04B1/04 , H04B1/44
CPC分类号： H03G3/3042
摘要： In a mobile communication device, a power amplifier amplifies the power of a signal to be transmitted. A transmitter filter limits the frequency band of the amplified signal to a predetermined frequency band for transmission. The signal limited in frequency band is transmitted via an antenna. Output power control circuitry controls the output power of the signal to be transmitted and has an output power sensor and an automatic power control circuit. The output power sensor succeeds the transmitter filter in the direction of flow of the signal to be transmitted, and senses the output power of the signal. The automatic power control circuit controls the gain of the power amplifier such that the output power sensed by the output power sensor coincides with a preselected reference value.
摘要翻译：在移动通信装置中，功率放大器放大要发送的信号的功率。发射机滤波器将放大信号的频带限制到预定频带以进行传输。频带限制的信号通过天线传输。输出功率控制电路控制要传输的信号的输出功率，并具有输出功率传感器和自动功率控制电路。输出功率传感器成功地将发射机滤波器沿着待传输信号的方向流动，并感测信号的输出功率。自动功率控制电路控制功率放大器的增益，使得由输出功率传感器感测的输出功率与预选的参考值一致。

27. 发明授权

US5550091A Method of sputtering a silicon nitride film 失效
标题翻译：溅射氮化硅膜的方法
公开(公告)号：US5550091A
公开(公告)日：1996-08-27
申请号：US437606
申请日：1995-05-09
申请人： Koichi Fukuda , Tomofumi Oba , Masanori Miyazaki , Hirofumi Fukui , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi , Masaru Kubota , Hitoshi Kitagawa , Akira Nakano , Osamu Yoshida
发明人： Koichi Fukuda , Tomofumi Oba , Masanori Miyazaki , Hirofumi Fukui , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi , Masaru Kubota , Hitoshi Kitagawa , Akira Nakano , Osamu Yoshida
IPC分类号： C23C14/06 , H01L21/02 , H01L21/28 , H01L21/31 , H01L21/318 , H01L21/331 , H01L21/336
CPC分类号： C23C14/0652 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/28008 , H01L21/3185 , H01L28/40 , H01L29/66765
摘要： There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.
摘要翻译：提供了一种使用具有优异的介电电压的单层结构的氮化硅绝缘膜的TFT的电子器件，以及可靠地制造该电子器件的方法。在电子设备中，在电绝缘基板的表面上沉积导电布线图案，并且形成绝缘层以覆盖布线图案和基板。绝缘层由氮化硅绝缘膜制成。布线图案和基板之间的接触角θ等于60°以上，氮化硅绝缘膜的厚度Tn1的值Tn1 / Tg和布线图案的厚度Tg等于2以上。由于布线图案的台阶和布线图案的上端而形成的氮化硅膜的上升起始位置和Tn1之间的水平距离Tn2为0.6

28. 发明授权

US5483274A Thermal head and thermal transfer apparatus 失效
标题翻译：热敏头和热转印装置
公开(公告)号：US5483274A
公开(公告)日：1996-01-09
申请号：US13167
申请日：1993-02-02
申请人： Nobuhiro Inoue , Akira Nakano , Yukio Tsuda , Katsunari Sasaki , Toshiro Nose , Masayoshi Aihara
发明人： Nobuhiro Inoue , Akira Nakano , Yukio Tsuda , Katsunari Sasaki , Toshiro Nose , Masayoshi Aihara
IPC分类号： B41J2/345 , B41J2/335
CPC分类号： B41J2/345
摘要： A thermal head is used on a thermal transfer recording apparatus which can record a continuous, fine line or curve by recording many dots, by a thermal transfer system, on a recording sheet. The thermal head comprises a one-dimensional array of heat generation element groups each comprised of a plurality of heat generation elements, such as heat generation resistors of, for example, a parallelogram, a diamond or an elliptic configuration, continuously arranged in a direction perpendicular to that in which recording is made on a recording sheet and lead electrodes connected adjacent to each other in predetermined positions, in which the longitudinal sides of the heat generation resistors are made oblique at a predetermined angle.
摘要翻译：在热转印记录装置上使用热敏头，其可以通过热记录纸上的热转印系统记录多个点来记录连续的细线或曲线。热头包括一组发热元件组，每个发热元件组由多个发热元件组成，诸如平行四边形，金刚石或椭圆形构造的发热电阻器，其沿垂直方向连续排列涉及在记录片材上进行记录和在预定位置彼此相邻连接的引线电极的预定位置，其中发热电阻器的纵向侧面以预定角度倾斜。

29. 发明授权

US5466655A Heat-sensitive recording material 失效
标题翻译：热敏记录材料
公开(公告)号：US5466655A
公开(公告)日：1995-11-14
申请号：US267030
申请日：1994-06-21
申请人： Naomasa Koike , Akira Nakano , Takao Kosaka , Naoya Sakata
发明人： Naomasa Koike , Akira Nakano , Takao Kosaka , Naoya Sakata
IPC分类号： B41M5/30 , B41M5/327 , B41M5/333 , B41M5/337 , B41M5/40 , B41M5/42 , B41M5/46
CPC分类号： B41M5/3375 , B41M5/46 , B41M5/3275 , B41M5/3335 , B41M5/42
摘要： A heat-sensitive recording material comprising a support and a heat-sensitive recording layer containing a leuco dye and a developer, formed on one side of the support, wherein the heat-sensitive recording layer contains an ultraviolet ray-absorbing agent, said ultraviolet ray-absorbing agent being a dimer ultraviolet ray-absorbing agent.
摘要翻译：一种热敏记录材料，其包含载体和形成在载体的一侧上的含有无色染料和显色剂的热敏记录层，其中所述热敏记录层含有紫外线吸收剂，所述紫外线 - 吸收剂是二聚体紫外线吸收剂。

30. 发明授权

US5130283A Olefin polymerization catalyst component 失效
标题翻译：烯烃聚合催化剂组分
公开(公告)号：US5130283A
公开(公告)日：1992-07-14
申请号：US635632
申请日：1991-01-07
申请人： Masahide Murata , Hiroyuki Furuhashi , Akira Nakano , Teruo Yashiro , Seizaburo Kanazawa , Masafumi Imai
发明人： Masahide Murata , Hiroyuki Furuhashi , Akira Nakano , Teruo Yashiro , Seizaburo Kanazawa , Masafumi Imai
IPC分类号： C08F4/60 , C08F4/654 , C08F4/658 , C08F10/00
CPC分类号： C08F10/00
摘要： According to the present invention, there is provided a catalyst component of metal oxide support type which has a high catalytic activity, that is, a little catalyst residue in a polymer, as well as improved catalytic grain strength sufficient for practical use and which hardly deteriorates even after storage for a long time. The catalyst component is obtained by contacting(a) a metal oxide with(b) a dihydrocarbyl magnesium, then contacting the resulting composition with(c) a compound represented by the general formula X.sup.1 .sub.n M(OR.sup.1).sub.m-n wherein X.sup.1 is a hydrogen atom, halogen atom or a hydrocarbon group of 1 to 20 carbon atoms, M is a boron, carbon, aluminum, silicon or phosphorus atom, R.sup.1 is a hydrocarbon group of 1 to 20 carbon atoms, m is the atomic valence of M and m>n.gtoreq.0, and(d) a titanium alkoxide represented by the general formula Ti(OR.sup.2).sub.4 wherein R.sup.2 is a hydrocarbon group of 1 to 12 carbon atoms, and then contacting the resulting solid with (e) an olefin in the presence of (f) an organoaluminum compound, then with (g) a halogen-containing alcohol and further with (h) an electron donating compound and (i) a titanium compound.
摘要翻译： PCT No.PCT / JP90 / 00632 Sec。 371日期1991年1月7日 102（e）日期1991年1月7日PCT提交1990年5月17日PCT公布。 WO90 / 14365 PCT公开号日本1990年11月29日。根据本发明，提供了具有高催化活性的金属氧化物载体型催化剂组分，即聚合物中少量催化剂残余物，以及足够的催化剂颗粒强度用于实际使用，并且即使在长时间储存后也几乎不劣化。催化剂组分通过使（a）金属氧化物与（b）二烃基镁接触，然后使所得组合物与（c）由通式X1nM（OR1）mn表示的化合物接触，其中X1是氢原子，卤原子或碳原子数1〜20的烃基，M为硼，碳，铝，硅或磷原子，R1为碳原子数1〜20的烃基，m为M的原子价，m> n > / = 0，和（d）由通式Ti（OR2）4表示的钛醇盐，其中R2是1至12个碳原子的烃基，然后在所存在的条件下使所得固体与（e）烯烃接触，（f）有机铝化合物，然后与（g）含卤素的醇进一步与（h）给电子化合物和（i）钛化合物反应。

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