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1. 发明授权

US5550091A Method of sputtering a silicon nitride film 失效
标题翻译：溅射氮化硅膜的方法
公开(公告)号：US5550091A
公开(公告)日：1996-08-27
申请号：US437606
申请日：1995-05-09
申请人： Koichi Fukuda , Tomofumi Oba , Masanori Miyazaki , Hirofumi Fukui , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi , Masaru Kubota , Hitoshi Kitagawa , Akira Nakano , Osamu Yoshida
发明人： Koichi Fukuda , Tomofumi Oba , Masanori Miyazaki , Hirofumi Fukui , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi , Masaru Kubota , Hitoshi Kitagawa , Akira Nakano , Osamu Yoshida
IPC分类号： C23C14/06 , H01L21/02 , H01L21/28 , H01L21/31 , H01L21/318 , H01L21/331 , H01L21/336
CPC分类号： C23C14/0652 , H01L21/0217 , H01L21/02211 , H01L21/02274 , H01L21/28008 , H01L21/3185 , H01L28/40 , H01L29/66765
摘要： There is provided an electronic device like a TFT using a silicon nitride insulating film of a single layer structure having an excellent dielectric voltage, and a method of producing the electronic device with reliability. In the electronic device, a conductive wiring pattern is deposited on a surface of an electrically insulated substrate, and an insulating layer is formed to cover the wiring pattern and the substrate. The insulating layer is made of a silicon nitride insulating film. A contact angle .theta. between the wiring pattern and the substrate is equals 60.degree. or more, and a value Tn1/Tg of a thickness Tn1 of the silicon nitride insulating film and a thickness Tg of the wiring pattern equals 2 or more. A horizontal distance Tn2 between a rise start position, where the silicon nitride film rises because of a step of the wiring pattern and the top end of the wiring pattern, and Tn1 are in a relation where 0.6.ltoreq.Tn2/Tn1.
摘要翻译：提供了一种使用具有优异的介电电压的单层结构的氮化硅绝缘膜的TFT的电子器件，以及可靠地制造该电子器件的方法。在电子设备中，在电绝缘基板的表面上沉积导电布线图案，并且形成绝缘层以覆盖布线图案和基板。绝缘层由氮化硅绝缘膜制成。布线图案和基板之间的接触角θ等于60°以上，氮化硅绝缘膜的厚度Tn1的值Tn1 / Tg和布线图案的厚度Tg等于2以上。由于布线图案的台阶和布线图案的上端而形成的氮化硅膜的上升起始位置和Tn1之间的水平距离Tn2为0.6

2. 发明授权

US5623161A Electronic element and method of producing same 失效
标题翻译：电子元件及其制造方法
公开(公告)号：US5623161A
公开(公告)日：1997-04-22
申请号：US442906
申请日：1995-05-17
申请人： Koichi Fukuda , Tomofumi Oba , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi
发明人： Koichi Fukuda , Tomofumi Oba , Chisato Iwasaki , Yasuhiko Kasama , Tadahiro Ohmi
IPC分类号： H01L21/318 , G02F1/1362 , H01L21/28 , H01L21/336 , H01L21/768 , H01L21/77 , H01L21/84 , H01L23/29 , H01L27/12 , H01L29/49 , H01L29/78 , H01L29/786 , H01L23/58
CPC分类号： H01L23/291 , H01L21/28008 , H01L21/76801 , H01L29/4908 , H01L29/66765 , G02F1/1362 , H01L2924/0002 , H01L2924/09701
摘要： An electronic element having a sufficient dielectric strength remarkably superior to any of the conventional ones. In this element, a conductive wire pattern is formed on the surface of a substrate which is insulative at least in its surface, and an insulating layer is so formed as to cover the substrate and the wire pattern either partially or entirely. The insulating layer is composed of a silicon nitride film where the oxygen content is less than 10 atomic percent at least in the vicinity of a step portion of the wire pattern. There is also provided a method of producing such electronic element, wherein the insulating layer is formed by plasma enhanced CVD under the conditions that the following relationship among a film forming temperature T (.degree. C.), an ion flux I (A) and a film forming speed v (nm/min): T.gtoreq.-651 (I/v)+390, 150.ltoreq.T.ltoreq.350 (where the ion flux denotes the current (A) per 60.times.60 cm.sup.2). According to this method, an insulating film of a high withstand voltage with a great dielectric strength can be obtained stably at a high yield rate.
摘要翻译：具有显着优于常规电介质的电介质强度的电子元件。在该元件中，在至少在其表面上绝缘的基板的表面上形成导线图案，并且形成绝缘层以部分或全部覆盖基板和线图案。绝缘层由至少在导线图案的台阶附近的氧含量小于10原子％的氮化硅膜构成。还提供了一种制造这种电子元件的方法，其中通过等离子体增强CVD形成绝缘层，条件是成膜温度T（℃），离子通量I（A）和成膜速度v（nm / min）：T> / = - 651（I / V）+390,150

3. 发明授权

US5609737A Film manufacturing method using single reaction chamber for chemical-vapor deposition and sputtering 失效
标题翻译：使用单反应室进行化学气相沉积和溅射的膜制造方法
公开(公告)号：US5609737A
公开(公告)日：1997-03-11
申请号：US289713
申请日：1994-08-12
申请人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
发明人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
IPC分类号： H01L21/205 , C23C14/34 , C23C16/02 , C23C16/44 , C23C16/509 , H01L21/203 , H01L21/31 , H01L21/336 , H01L21/77 , H01L31/20 , C23C16/00
CPC分类号： H01L29/66765 , C23C14/34 , C23C16/0245 , C23C16/4405 , C23C16/5096 , H01J37/34 , H01L31/202 , H01J2237/32 , H01L27/1214 , Y02E10/50 , Y02P70/521
摘要： A method for manufacturing thin films in which a first film is formed on a substrate using chemical-vapor deposition (CVD), and a second film is formed on the substrate using sputtering, wherein the processes are sequentially performed in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode, and a second electrode located under the first electrode. During the CVD process, a dummy target is mounted on the first electrode and the substrate is mounted on the second electrode, a reactive gas is introduced into the chamber, and high frequency electrical power is applied to both the first and second electrodes, thereby causing the constituents of the reactive gas to deposit on the substrate to form the first film. Subsequently, any remaining reactive gas is removed from the chamber and an automated mechanism removes the dummy target from the first electrode and stores the dummy target in a storage chamber. A sputtering electrode is then mounted on the first electrode and a sputtering gas is introduced into the reaction chamber. High frequency electrical power is then applied to both the first and second electrodes, thereby causing the sputtering gas and sputtering target to deposit the second film on the substrate.
摘要翻译：一种用于制造薄膜的方法，其中使用化学气相沉积（CVD）在基板上形成第一膜，并且使用溅射在所述基板上形成第二膜，其中所述工艺在相同的沉积室中依次进行而不暴露底物转化为氧化性气氛。沉积室包括第一电极和位于第一电极下方的第二电极。在CVD工艺期间，将虚拟目标物安装在第一电极上，并且将基板安装在第二电极上，将反应性气体引入室中，并且将高频电力施加到第一和第二电极两者，由此引起反应气体的成分沉积在基底上以形成第一膜。随后，将任何剩余的反应气体从室中除去，并且自动化机构从第一电极移除虚设目标物并将虚拟目标物存储在储存室中。然后将溅射电极安装在第一电极上，并将溅射气体引入反应室。然后将高频电力施加到第一和第二电极，由此使溅射气体和溅射靶将第二膜沉积在基板上。

4. 发明授权

US5755938A Single chamber for CVD and sputtering film manufacturing 失效
标题翻译：用于CVD和溅射膜制造的单室
公开(公告)号：US5755938A
公开(公告)日：1998-05-26
申请号：US556188
申请日：1995-11-09
申请人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
发明人： Hirofumi Fukui , Masanori Miyazaki , Masami Aihara , Chisato Iwasaki , Koichi Fukuda , Yasuhiko Kasama
IPC分类号： H01L21/205 , C23C14/34 , C23C16/02 , C23C16/44 , C23C16/509 , H01L21/203 , H01L21/31 , H01L21/336 , H01L21/77 , H01L31/20 , C23C16/00
CPC分类号： H01L29/66765 , C23C14/34 , C23C16/0245 , C23C16/4405 , C23C16/5096 , H01J37/34 , H01L31/202 , H01J2237/32 , H01L27/1214 , Y02E10/50 , Y02P70/521
摘要： An apparatus which allows a first film to be formed on a substrate by chemical vapor deposition (CVD) and a second film to be formed on the substrate by sputtering, wherein the processes are performed sequentially in the same deposition chamber without exposing the substrate to an oxidative atmosphere. The deposition chamber includes a first electrode and a second electrode located under the first electrode. A transfer mechanism loads a dummy target onto the first electrode and the substrate onto the second electrode prior to a CVD process. The dummy target is resistant to sputtering and thus does not contaminate the film deposited on the substrate during CVD. After CVD and prior to sputtering, the transfer mechanism unloads the dummy target and replaces it with a sputtering target for film formation by sputtering. Both the dummy target and sputtering target can be loaded and unloaded from a single pressurized storage chamber. Thus, film formation by both sputtering and CVD can be accomplished by using a single deposition chamber without removing the substrate between processes.
摘要翻译：一种允许通过化学气相沉积（CVD）在衬底上形成第一膜和通过溅射形成在衬底上的第二膜的装置，其中在相同的沉积室中顺序地进行处理，而不将衬底暴露于氧化气氛。沉积室包括位于第一电极下方的第一电极和第二电极。转移机构在CVD工艺之前将虚拟靶加载到第二电极上的第一电极和衬底上。虚拟靶对溅射是耐受的，因此在CVD期间不会污染沉积在衬底上的膜。在CVD之后并且在溅射之前，转移机构卸载虚拟靶并用用溅射的成膜溅射靶代替它。虚拟靶和溅射靶都可以从单个加压储存室装载和卸载。因此，通过溅射和CVD的成膜可以通过使用单个沉积室而不在工艺之间移除基板来实现。

5. 发明授权

US5714407A Etching agent, electronic device and method of manufacturing the device 失效
标题翻译：蚀刻剂，电子装置及其制造方法
公开(公告)号：US5714407A
公开(公告)日：1998-02-03
申请号：US414973
申请日：1995-03-31
申请人： Matagoro Maeno , Masayuki Miyashita , Hirohisa Kikuyama , Tatsuhiro Yabune , Jun Takano , Hirofumi Fukui , Satoshi Miyazawa , Chisato Iwasaki , Tadahiro Ohmi , Yasuhiko Kasama , Hitoshi Seki
发明人： Matagoro Maeno , Masayuki Miyashita , Hirohisa Kikuyama , Tatsuhiro Yabune , Jun Takano , Hirofumi Fukui , Satoshi Miyazawa , Chisato Iwasaki , Tadahiro Ohmi , Yasuhiko Kasama , Hitoshi Seki
IPC分类号： C09K13/08 , H01L21/3213 , H01L21/00 , C09K13/00
CPC分类号： H01L21/32134 , C09K13/08
摘要： An etching agent and an electronic device manufacturing method using the etching agent. The etching agent contains, in a solution, hydrofluoric acid at a concentration of 0.05 to 0.5 mol/l, and halooxoacid ions, represented by the formula (XO.sub.n).sup.p- (wherein X is a halogen element, n is 3, 4 or 6, p is 1, 2 or 3), at a concentration of at least 0.01 mol/l. An electronic device manufactured using the etching agent requires only a single etching step to etch both conductive layers (such as aluminum) as well as ohmic contact layers (a-Si).
摘要翻译：蚀刻剂和使用该蚀刻剂的电子器件制造方法。蚀刻剂在溶液中含有浓度为0.05〜0.5mol / l的氢氟酸和由式（XOn）p-（其中X为卤素元素，n为3,4或6）表示的卤代酸离子，p为1,2或3），浓度为至少0.01mol / l。使用蚀刻剂制造的电子器件仅需要蚀刻两个导电层（例如铝）以及欧姆接触层（a-Si）的单一蚀刻步骤。

6. 发明授权

US5570031A Substrate surface potential measuring apparatus and plasma equipment 失效
标题翻译：基板表面电位测量装置和等离子体设备
公开(公告)号：US5570031A
公开(公告)日：1996-10-29
申请号：US336903
申请日：1994-11-10
申请人： Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi
发明人： Makoto Sasaki , Hirofumi Fukui , Masami Aihara , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi
IPC分类号： H01L21/302 , G01R29/12 , G01R31/28 , H01L21/203 , H01L21/205 , H01L21/3065 , H01L21/66 , G01R31/302 , G01R19/00
CPC分类号： G01R29/12 , G01R31/2831 , H01L22/14 , H01L2924/0002
摘要： There is provided a surface potential measuring apparatus cable of accurately measuring the potential of a substrate regardless of the material of the substrate, and a plasma equipment capable of accurately measuring and controlling ion energy. The substrate surface potential measuring apparatus measures the surface potential of a substrate in a plasma processing apparatus and includes a terminal electrically connected to a suscepter electrode for holding the substrate, a first condenser disposed between the terminal and the ground and a potential measuring device for measuring the potential of the terminal. The surface potential of the substrate is found from the potential of the suscepter electrode measured by the potential measuring means.
摘要翻译：提供了一种能够精确地测量衬底的电位的表面电位测量装置电缆，而不管衬底的材料如何，以及能够精确地测量和控制离子能量的等离子体设备。基板表面电位测量装置测量等离子体处理装置中的基板的表面电位，并且包括电连接到用于保持基板的可变电极的端子，设置在端子和地之间的第一冷凝器和用于测量的电位测量装置终端的潜力。基于由电位测量装置测量的电容器的电位，找到衬底的表面电位。

7. 发明授权

US06270618B1 Plasma processing apparatus 失效
标题翻译：等离子体处理装置
公开(公告)号：US06270618B1
公开(公告)日：2001-08-07
申请号：US09205800
申请日：1998-12-04
申请人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
发明人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
IPC分类号： C23F102
CPC分类号： H01J37/32174 , C23C16/4405 , H01J37/32082
摘要： A plasma processing apparatus is provided which does not require replacement of a band eliminator according to a frequency used, which is capable of performing chamber cleaning without replacing a resonance circuit, and which is capable of performing plasma cleaning of the inside of the chamber without using a bellows. The plasma processing apparatus includes a resonance circuit (band eliminator) for causing series resonance with a microwave circuit formed of at least a susceptor electrode and a processing chamber in order to trap plasma between a plasma excitation electrode and the susceptor electrode when the surface of a workpiece placed on the susceptor electrode is processed by plasma generated between the plasma excitation electrode and the susceptor electrode, which are provided inside the processing chamber; and for causing parallel resonance with the microwave circuit in order to diffuse plasma inside the processing chamber when performing plasma cleaning.
摘要翻译：提供一种等离子体处理装置，其不需要根据所使用的频率来更换带除器，其能够执行腔室清洁而不更换谐振电路，并且能够在不使用腔室内进行等离子体清洁室内一个波纹管。等离子体处理装置包括用于与由至少一个基座电极和一个处理室形成的微波电路进行串联谐振的谐振电路（去波器），以便在等离子体激发电极和基座电极之间捕获等离子体时放置在基座电极上的工件通过设置在处理室内部的等离子体激发电极和基座电极之间产生的等离子体进行处理; 并且用于与微波电路并联谐振，以便在进行等离子体清洗时在等离子体清洗中扩散处理室内的等离子体。

8. 发明授权

US06155202A Plasma processing apparatus, matching box, and feeder 失效
标题翻译：等离子体处理装置，配套箱和进料器
公开(公告)号：US06155202A
公开(公告)日：2000-12-05
申请号：US199944
申请日：1998-11-25
申请人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiro Takeda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
发明人： Akira Nakano , Sung Chul Kim , Koichi Fukuda , Yasuhiro Takeda , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
IPC分类号： H01J37/32 , C23C16/00 , H01J7/24 , H01J21/00
CPC分类号： H01J37/32082 , H01J37/32183
摘要： In a plasma processing apparatus, in a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode, one of the two electrodes which form a tuning capacitor also serves as the plasma excitation electrode. Alternatively, in a plasma processing apparatus, the side wall of a housing made from an electrically conductive member and accommodating a matching circuit intervening between a high-frequency power source and a plasma excitation electrode for achieving impedance matching between the high-frequency power source and the plasma excitation electrode and a feeder for supplying high-frequency electric power from the high-frequency power source to the plasma excitation electrode through the matching circuit is formed not in parallel to the feeder.
摘要翻译：在等离子体处理装置中，在高频电源和等离子体激励电极之间插入用于实现高频电源和等离子体激励电极之间的阻抗匹配的匹配电路中，形成调谐电容器的两个电极之一也用作等离子体激发电极。或者，在等离子体处理装置中，由导电构件制成的壳体的侧壁，并且容纳插入在高频电源和等离子体激励电极之间的匹配电路，以实现高频电源与高频电源之间的阻抗匹配等离子体激励电极和用于通过匹配电路从高频电源向等离子体激励电极提供高频电力的馈线形成为不与馈线并联。

9. 发明授权

US06349670B1 Plasma treatment equipment 失效
标题翻译：等离子处理设备
公开(公告)号：US06349670B1
公开(公告)日：2002-02-26
申请号：US09442539
申请日：1999-11-18
申请人： Akira Nakano , Koichi Fukuda , Sung Chul Kim , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
发明人： Akira Nakano , Koichi Fukuda , Sung Chul Kim , Yasuhiko Kasama , Tadahiro Ohmi , Shoichi Ono
IPC分类号： C23C1600
CPC分类号： H01J37/32082 , G01R1/06772 , G01R27/02 , H01J37/32935
摘要： The invention provides a plasma equipment which is advantageous in that the suscepter impedance is small, the dependence on the frequency is low, the power consumption efficiency is high, the film forming speed is faster as compared with conventional plasma equipment, and the film quality is high. Metal plates AC short between a chamber wall and a shield of an electrode of the same DC potential as the chamber.
摘要翻译：本发明提供一种等离子体设备，其优点在于，与常规等离子体设备相比，阻抗较小，对频率的依赖性低，功耗效率高，成膜速度更快，膜质量高。金属板在室壁与与室相同的DC电位的电极的屏蔽之间交流短路。

10. 发明授权

US5681487A Method of removing photoresist film 失效
标题翻译：去除光刻胶膜的方法
公开(公告)号：US5681487A
公开(公告)日：1997-10-28
申请号：US499538
申请日：1995-07-07
申请人： Hitoshi Seki , Chisato Iwasaki , Akane Sekiya , Yasuhiko Kasama , Tadahiro Ohmi
发明人： Hitoshi Seki , Chisato Iwasaki , Akane Sekiya , Yasuhiko Kasama , Tadahiro Ohmi
IPC分类号： G03F7/42 , H01L21/027 , G03C11/00
CPC分类号： G03F7/42
摘要： The present invention provides a method of removing a photoresist film, which exhibits the high ability to remove photoresist and excellent safety and handling properties such as workability, In the removing method, the photoresist film is removed by chemical decomposition in an inorganic aqueous solution under ultraviolet-light irradiation. The inorganic aqueous solution is an aqueous solution of peroxomonosulfate or an aqueous solution containing 4.5 to 36 wt % of sulfuric acid and 0.05 to 0.8 wt % of hydrogen peroxide.
摘要翻译：本发明提供一种去除光致抗蚀剂膜的方法，其具有高的去除光致抗蚀剂的能力和优异的安全性和操作性能如可加工性。在去除方法中，通过在紫外线下的无机水溶液中通过化学分解除去光致抗蚀剂膜光线照射。无机水溶液是含硫酸盐的水溶液或含有4.5〜36重量％的硫酸和0.05〜0.8重量％的过氧化氢的水溶液。

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