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21. 外观设计

USD359476S Circuit board with mounting flange 失效
公开(公告)号：USD359476S
公开(公告)日：1995-06-20
申请号：US17072
申请日：1994-01-03
申请人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita
设计人： Hiroshi Sakashita , Yukio Fukuda , Jun Yamashita

22. 发明申请

US20100074820A1 XENON RETRIEVAL SYSTEM AND RETRIEVAL DEVICE 有权
标题翻译： XENON检索系统和检索设备
公开(公告)号：US20100074820A1
公开(公告)日：2010-03-25
申请号：US12516723
申请日：2007-11-30
申请人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
发明人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
IPC分类号： C01B23/00 , B01D53/02
CPC分类号： B01D53/02 , B01D2253/108 , B01D2256/18 , B01D2257/11 , C01B23/0042 , C01B23/0052 , C01B23/0084 , C01B2210/0037 , C01B2210/0068 , F25J3/028 , F25J2205/20 , F25J2205/40 , F25J2205/60 , F25J2215/36
摘要： To provide a simple highly-pure Xe retrieval method and device with high retrieval efficiency by functionally removing such elements as water, CO2 and FCs from waste gases from semiconductor production processes, such as the plasma etching, that contain low-concentration Xe. For samples containing xenon and fluorocarbon, this invention is characterized by having at least first adsorption means (A1) filled with synthetic zeolite with pore size of 4A or smaller and aluminum oxide, arranged serially, gas separation means (A2) composed of silicone or polyethylene hollow fiber gas separation membrane modules 4, second adsorption means (A3) filled with either activated carbon, synthetic zeolite with pore size of 5A or larger, molecular sieving carbon with pore size of 5A or larger, or a combination of these, and reaction means (A4) filled with calcium compounds as reactant.
摘要翻译：通过从包含低浓度Xe的半导体生产工艺（例如等离子体蚀刻）的废气中功能去除水，CO2和FC等元素，提供具有高回收效率的简单的高纯度Xe回收方法和装置。对于含有氙气和碳氟化合物的样品，本发明的特征在于至少具有填充有4A或更小孔径的合成沸石的第一吸附装置（A1）和串联排列的氧化铝，由硅氧烷或聚乙烯组成的气体分离装置（A2）中空纤维气体分离膜组件4，填充有活性碳的第二吸附装置（A3），孔径为5A以上的合成沸石，孔径为5A以上的分子筛碳，或它们的组合，以及反应装置（A4）填充有钙化合物作为反应物。

23. 发明授权

US4988979A Fault inspection system for rotary machines 失效
标题翻译：旋转机故障检测系统
公开(公告)号：US4988979A
公开(公告)日：1991-01-29
申请号：US404736
申请日：1989-09-08
申请人： Hiroaki Sasaki , Yukio Fukuda , Toshio Shimizu
发明人： Hiroaki Sasaki , Yukio Fukuda , Toshio Shimizu
IPC分类号： G01H17/00 , G01H3/12 , G01M13/04 , G01M99/00 , G08B21/20
CPC分类号： G08B21/187 , G01H3/12
摘要： A fault inspection system for the rotary machine is disclosed in which the rotational speed or a physical quantity related thereto of the rotary machine drive with changing rotational speeds is detected as a first detection signal, and the sound pressure or mechanical vibration from the rotary machine as a second signal. A reference line representing the relationship between the values of the first and second detection signals is determined on the basis of the same values. A fault of the rotary machine is detected on the basis of a third detection signal associated with an area corresponding to the region where the first or second detection signal exceeds the reference line.
摘要翻译：公开了一种用于旋转机械的故障检查系统，其中检测到具有改变转速的旋转机械驱动器相关的转速或物理量作为第一检测信号，并且来自旋转机器的声压或机械振动作为第二个信号。基于相同的值来确定表示第一和第二检测信号的值之间的关系的参考线。基于与第一或第二检测信号超过参考线的区域对应的区域相关联的第三检测信号检测旋转机器的故障。

24. 发明授权

US08153091B2 Xenon retrieval system and retrieval device 有权
标题翻译：氙气检索系统和检索装置
公开(公告)号：US08153091B2
公开(公告)日：2012-04-10
申请号：US12516723
申请日：2007-11-30
申请人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
发明人： Masahiro Kimoto , Terumasa Koura , Yukio Fukuda , Masaki Narazaki , Taiji Hashimoto , Toru Sakai , Kazuo Yokogi
IPC分类号： B01D53/04
CPC分类号： B01D53/02 , B01D2253/108 , B01D2256/18 , B01D2257/11 , C01B23/0042 , C01B23/0052 , C01B23/0084 , C01B2210/0037 , C01B2210/0068 , F25J3/028 , F25J2205/20 , F25J2205/40 , F25J2205/60 , F25J2215/36
摘要： To provide a simple highly-pure Xe retrieval method and device with high retrieval efficiency by functionally removing such elements as water, CO2 and FCs from waste gases from semiconductor production processes, such as the plasma etching, that contain low-concentration Xe. For samples containing xenon and fluorocarbon, this invention is characterized by having at least first adsorption means (A1) filled with synthetic zeolite with pore size of 4A or smaller and aluminum oxide, arranged serially, gas separation means (A2) composed of silicone or polyethylene hollow fiber gas separation membrane modules 4, second adsorption means (A3) filled with either activated carbon, synthetic zeolite with pore size of 5A or larger, molecular sieving carbon with pore size of 5A or larger, or a combination of these, and reaction means (A4) filled with calcium compounds as reactant.
摘要翻译：通过从包含低浓度Xe的半导体生产工艺（例如等离子体蚀刻）的废气中功能去除水，CO2和FC等元素，提供具有高回收效率的简单的高纯度Xe回收方法和装置。对于含有氙气和碳氟化合物的样品，本发明的特征在于至少具有填充有4A或更小孔径的合成沸石的第一吸附装置（A1）和串联排列的氧化铝，由硅氧烷或聚乙烯组成的气体分离装置（A2）中空纤维气体分离膜组件4，填充有活性碳的第二吸附装置（A3），孔径为5A以上的合成沸石，孔径为5A以上的分子筛碳，或它们的组合，以及反应装置（A4）填充有钙化合物作为反应物。

25. 发明申请

US20060068104A1 Thin-film formation in semiconductor device fabrication process and film deposition apparatus 审中-公开
标题翻译：半导体器件制造工艺中的薄膜形成和成膜装置
公开(公告)号：US20060068104A1
公开(公告)日：2006-03-30
申请号：US11231962
申请日：2005-09-22
申请人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
发明人： Tadahiro Ishizaka , Yasuhiro Oshima , Naoki Yoshii , Takashi Shigeoka , Kohei Kawamura , Yukio Fukuda , Yasuhiko Kojima
IPC分类号： C23C16/00
CPC分类号： C23C16/34 , C23C16/45529 , C23C16/45542 , H01L21/28562 , H01L21/76846 , H01L21/7685 , H01L2221/1078
摘要： A film fabrication method for forming a film over a substrate in a processing chamber includes a first film formation process and a second film formation process. In the first film formation process, (a) a first step of supplying a first source gas containing a metal-organic compound and without containing a halogen element into the chamber and then removing the first source gas from the chamber, and (b) a second step of supplying a second source gas containing hydrogen or a hydrogen compound into the chamber and then removing the second source gas from the chamber, are repeated a predetermined number of times. In the second film formation process, (c) a third step of supplying a third source gas containing a metal halide compound into the chamber and then removing the third gas from the chamber, and (d) a fourth step of supplying a plasma-activated fourth source gas containing hydrogen or a hydrogen compound into the chamber and then removing the fourth source gas from the chamber, are repeated a predetermined number of times.
摘要翻译：用于在处理室中在基板上形成膜的膜制造方法包括第一成膜工艺和第二成膜工艺。在第一成膜方法中，（a）第一步骤，将含有金属 - 有机化合物的第一源气体不含卤素元素供应到室中，然后从室除去第一源气体，和（b）将包含氢或氢化合物的第二源气体供应到室中，然后从室除去第二源气体的第二步骤重复预定次数。在第二成膜方法中，（c）第三步骤，将含有金属卤化物的第三源气体供应到室中，然后从室中除去第三气体，以及（d）第四步骤，将包含氢或氢化合物的第四源气体进入室，然后从室除去第四源气体，重复预定次数。

26. 发明授权

US07717061B2 Gas switching mechanism for plasma processing apparatus 有权
标题翻译：等离子体处理装置的气体切换机构
公开(公告)号：US07717061B2
公开(公告)日：2010-05-18
申请号：US11232943
申请日：2005-09-23
申请人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
发明人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , F16K11/065 , F16K11/085 , F16K11/074 , F16K3/08 , F16K47/04
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
摘要翻译：公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

27. 发明申请

US20060027167A1 Processing apparatus and processing method 有权
标题翻译：处理装置及处理方法
公开(公告)号：US20060027167A1
公开(公告)日：2006-02-09
申请号：US11232943
申请日：2005-09-23
申请人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
发明人： Tadahiro Ishizaka , Naoki Yoshii , Kohei Kawamura , Yukio Fukuda , Takashi Shigeoka , Yasuhiko Kojima , Yasuhiro Oshima , Junichi Arami , Atsushi Gomi
IPC分类号： C23C16/00
CPC分类号： C23C16/45542 , C23C16/34 , C23C16/452 , C23C16/45561 , Y10T137/86558 , Y10T137/86566 , Y10T137/86638 , Y10T137/86726 , Y10T137/86743 , Y10T137/86751 , Y10T137/86871
摘要： A processing apparatus is disclosed which is capable of switching supplies of a raw material gas and a reducing gas alternately, while continuously forming a plasma of the reducing gas. An excitation device (12) excites a reducing gas supplied thereinto, and the excited reducing gas is supplied into a process chamber (2). A switching mechanism (20) is arranged between the excitation device (12) and the process chamber (2), and a bypass line (22) is connected to the switching mechanism (20). The switching mechanism (20) switches the flow of the excited reducing gas from the excitation device (12) between the process chamber (2) and the bypass line (22).
摘要翻译：公开了能够在连续地形成还原气体的等离子体的同时交替地切换原料气体和还原气体的供给的处理装置。励磁装置（12）激发供给到其中的还原气体，并将被激发的还原气体供给到处理室（2）。在励磁装置（12）和处理室（2）之间设置有切换机构（20），旁通管路（22）与切换机构（20）连接。切换机构（20）切换来自处理室（2）和旁通管线（22）之间的激发装置（12）的被激发的还原气体的流动。

28. 发明申请

US20050115603A1 Solar cell module edge face sealing member and solar cell module employing same 审中-公开
标题翻译：太阳能电池模块边缘密封件和采用其的太阳能电池模块
公开(公告)号：US20050115603A1
公开(公告)日：2005-06-02
申请号：US10998087
申请日：2004-11-29
申请人： Hiroyuki Yoshida , Yukio Fukuda , Yuji Suzuki , Akimasa Umemoto
发明人： Hiroyuki Yoshida , Yukio Fukuda , Yuji Suzuki , Akimasa Umemoto
IPC分类号： H01L25/00 , H01L31/042 , H01L31/048
CPC分类号： H01L31/048 , H02S30/10 , Y02E10/50
摘要： Edge face sealing member(s) may be roughly c-shaped in cross-section, may be frame-like in shape and formed in more or less parallel fashion with respect to outer shape(s) of solar cell module body or bodies, may comprise upper sealing region(s) abutting front surface(s) of solar cell module body or bodies, may further comprise lower sealing region(s) abutting back surface(s) of solar cell module body or bodies, and may further comprise side sealing region(s) abutting edge face(s) of solar cell module body or bodies. Furthermore, sealing region(s) may be roughly c-shaped in cross-section; may comprise upper sealing region(s) abutting front surface(s) of solar cell module body or bodies, lower sealing region(s) abutting back surface(s) of solar cell module body or bodies, and side sealing region(s) abutting edge face(s) of solar cell module body or bodies; may be of two-layer construction; and outer layer(s) may be hard, hardness(es) of inner layer(s) being less than that of outer layer(s); as a result of which there may be intimate contact even with nonflat and/or nonsmooth glass surface(s), permitting sealing.
摘要翻译：边缘密封构件的横截面可以是大致c形，可以是框架状的形状，并且相对于太阳能电池模块主体或主体的外部形状或多或少地平行地形成，可以包括邻接太阳能电池模块主体或主体的前表面的上密封区域可以进一步包括邻接太阳能电池模块主体或主体的背面的下密封区域，并且还可以包括侧密封太阳能电池组件主体或主体的邻接边缘区域。此外，密封区域的横截面可以大致c形; 可以包括邻接太阳能电池模块主体或主体的前表面的上密封区域，与太阳能电池模块主体或主体的后表面相邻的下密封区域以及邻接的太阳能电池模块主体或主体的侧密封区域太阳能电池组件主体或主体的边缘面; 可以是两层结构; 并且外层可以是硬的，内层的硬度小于外层的硬度; 其结果是即使具有非平坦和/或非光滑的玻璃表面也可能紧密接触，允许密封。

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