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    • 29. 发明授权
    • Chemical vapor deposition apparatus and cleaning method thereof
    • 化学气相沉积设备及其清洁方法
    • US06312569B1
    • 2001-11-06
    • US09172141
    • 1998-10-14
    • Hidenao SuzukiTsutomu NakadaMasahito AbeMasao Saitoh
    • Hidenao SuzukiTsutomu NakadaMasahito AbeMasao Saitoh
    • C25F100
    • C23C16/4401Y10S156/916
    • A chemical vapor deposition apparatus for depositing a thin film of highly dielectric materials for giga-capacity memory devices can reliably clean reaction products formed within the deposition chamber without sacrificing the production efficiency. The apparatus comprises a hermetic deposition chamber containing a substrate holding section for supporting a substrate, and a gas supply head disposed opposite to the substrate holding section for directing a gaseous feed material onto the substrate. There are provided a trapping member supporting device for supporting a trapping member so as to be opposite to a target cleaning area inside the deposition chamber, and a plasma generation device for generating a plasma between the target cleaning area and the trapping member supported by the trapping member supporting device.
    • 用于沉积用于千兆容量存储器件的高介电材料薄膜的化学气相沉积设备可以可靠地清洁沉积室内形成的反应产物而不牺牲生产效率。 该装置包括一个包含用于支撑衬底的衬底保持部分的气密淀积室和一个与衬底保持部分相对设置的用于将气体进料材料引导到衬底上的气体供给头。 提供了一种捕获构件支撑装置,用于支撑捕获构件以与沉积室内的目标清洁区域相对;以及等离子体产生装置,用于在目标清洁区域和由捕获物支撑的捕获构件之间产生等离子体 会员支持装置。