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    • 22. 发明授权
    • Method and apparatus for exposure, and device manufacturing method
    • 曝光方法和装置及装置制造方法
    • US06699630B2
    • 2004-03-02
    • US10162383
    • 2002-06-05
    • Kazuya Ota
    • Kazuya Ota
    • G03F900
    • G03F7/70066G03F7/70425G03F7/70875
    • On sequentially transferring patterns formed on a mask onto a plurality of divided areas on a substrate, when a new divided area on the substrate exposed, the substrate is moved from the exposure position of the preceding divided area to the exposure position of the new divided area in consideration of thermal expansion of the substrate at this stage. Thereafter, the mask pattern is transferred onto the predetermined divided area. With this process, exposure is performed with the respective shot areas arranged on the substrate at a desired interval in a cooled state after exposure. This makes it possible to improve the overlay accuracy with respect to the subsequent layer while performing exposure with high overlay accuracy with respect to the preceding layer.
    • 在将掩模上形成的图案顺序地转印到基板上的多个分割区域上时,当基板上的新分割区域露出时,基板从前一分割区域的曝光位置移动到新分割区域的曝光位置 考虑到该阶段的基板的热膨胀。 此后,将掩模图案转印到预定的分割区域上。 利用该处理,曝光后,以冷却状态,以所需的间隔布置在基板上的各个照射区域进行曝光。 这使得相对于前一层以高重叠精度进行曝光的同时可以提高相对于后续层的叠加精度。
    • 24. 发明授权
    • Exposure apparatus, exposure method and method for manufacturing devices
    • 曝光装置,曝光方法和制造装置的方法
    • US06549270B1
    • 2003-04-15
    • US09533546
    • 2000-03-23
    • Kazuya Ota
    • Kazuya Ota
    • G03B2742
    • G03F7/707G03F7/70233G03F7/70258G03F7/70708G03F7/70775
    • In this exposure apparatus, position information such as the position, inclination, or shape of a first mirror, a second mirror, a third mirror, and a fourth mirror constituting a projection optical system PO is measured with a mirror monitor mechanism. Based on the obtained position information, the position or inclination or shape or the like of the first mirror, the second mirror, the third mirror, and the fourth mirror is corrected by actuators serving as a correction mechanism. As a result, in the case where changes occur in the projection optical system, these can be corrected in order to maintain the exposure conditions.
    • 在该曝光装置中,使用镜面监视机构测量构成投影光学系统PO的第一反射镜,第二反射镜,第三反射镜和第四反射镜的位置信息,例如位置,倾斜度或形状。 基于所获得的位置信息,通过用作校正机构的致动器来校正第一反射镜,第二反射镜,第三反射镜和第四反射镜的位置或倾斜度或形状等。 结果,在投影光学系统发生变化的情况下,可以对这些变化进行校正,以保持曝光条件。
    • 25. 发明授权
    • Position transducer and exposure apparatus with same
    • 位置传感器和曝光设备相同
    • US06535272B2
    • 2003-03-18
    • US09901885
    • 2001-07-09
    • Kazuya OtaJiro Inoue
    • Kazuya OtaJiro Inoue
    • G03B2742
    • G03F9/7049
    • The exposure apparatus is provided in its main body portion with laser diodes each having different wave-lengths, for illuminating light for alignment onto a mark of a grating form arranged on each of a reticle and a wafer. The main body portion of the exposure apparatus has photomultipliers for receiving the diffraction light returned from each of the reticle mark and the wafer mark. The alignment of the reticle mark with the wafer mark is implemented by comparing phase differences of optical beat signals converted photoelectrically by the photomultipliers and by means of a phase detection comparison system. The light fluxes are transmitted between photomultipliers the laser diodes and the alignment optical system disposed in the main body portion thereof through optical fibers. This arrangement enables the position transducer to reduce an influence of generated heat upon the position detection of the wafer as well as the exposure apparatus, even if a photodetector having a large calorific power is employed.
    • 曝光装置在其主体部分中设置有各自具有不同波长的激光二极管,用于照亮用于对准到布置在标线片和晶片每个上的光栅形式的标记的光。 曝光装置的主体部分具有用于接收从每个标线标记和晶片标记返回的衍射光的光电倍增管。 标线标记与晶片标记的对准通过比较光电倍增管光电转换的光差信号的相位差和相位检测比较系统来实现。 光束通过光纤在激光二极管和配置在其主体部分中的对准光学系统的光电倍增器之间传输。 这种布置使得即使使用具有大的发热量的光电检测器,位置传感器也可以减少产生的热量对晶片和曝光设备的位置检测的影响。
    • 28. 发明授权
    • Alignment method
    • 对齐方法
    • US5831739A
    • 1998-11-03
    • US631127
    • 1996-04-12
    • Kazuya Ota
    • Kazuya Ota
    • G03F9/00H01L21/027G01B11/00G03B27/42
    • G03F9/7092G03F9/7003
    • An alignment method in which a plurality of areas on a wafer which are to be exposed are each aligned with respect to a reference position. The method includes: measuring array coordinates of a plurality of alignment measuring points; determining a reliability value for each alignment datum on the basis of a dispersion of differences (alignment data) between the measured array coordinates and the corresponding design values; calculating values of coordinate transformation parameters for obtaining actual array coordinates from the design array coordinates by using the reliability value as a weight; and obtaining array coordinates of each shot area by using the transformation parameters.
    • 对准方法,其中要暴露的晶片上的多个区域各自相对于参考位置对准。 该方法包括:测量多个对准测量点的阵列坐标; 基于所测量的阵列坐标与对应的设计值之间的差异(对准数据)的差异,确定每个对准基准的可靠性值; 通过使用可靠性值作为权重,计算从设计数组坐标获得实际阵列坐标的坐标变换参数的值; 并通过使用变换参数获得每个拍摄区域的阵列坐标。
    • 29. 发明授权
    • Method for aligning shot areas on a substrate
    • 用于对准基板上的照射区域的方法
    • US5561606A
    • 1996-10-01
    • US538467
    • 1995-10-03
    • Kazuya OtaMasaharu KawakuboKenji Nishi
    • Kazuya OtaMasaharu KawakuboKenji Nishi
    • G03F9/00H01L21/78
    • G03F9/7003
    • Plural shot areas arranged in succession in a two-dimensional array on a substrate are aligned to a predetermined reference position in a fixed coordinate system. At least three of the plural shot areas are selected as specified shot areas. Coordinate values (positions) of alignment marks associated, respectively, with the specified shot areas are measured. Anticipated coordinate values are calculated from preset coordinate values, based on an array model of the shot areas, predetermined by a first equation. A unique relation defined by a second equation is assumed, between the anticipated coordinate values and actual coordinate values in the alignment. Parameters of the relation are determined so as to minimize the average error between the measured coordinate values and coordinate values calculated from the relation. Actual coordinate values of the shot areas on the substrate are calculated based on the parameters and the anticipated coordinate values.
    • 在基板上连续排列成二维阵列的多个喷射区域与固定坐标系中的预定基准位置对准。 选择多个拍摄区域中的至少三个作为指定的拍摄区域。 测量与指定拍摄区域相关联的对准标记的坐标值(位置)。 基于由第一等式预定的拍摄区域的阵列模型,从预设坐标值计算预期坐标值。 假设在第二方程中定义的独特关系,在对准中的预期坐标值和实际坐标值之间。 确定关系的参数,以使得测量的坐标值与根据该关系计算的坐标值之间的平均误差最小化。 基于参数和预期坐标值计算基板上的拍摄区域的实际坐标值。