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21. 发明授权

US6064807A Charged-particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US6064807A
公开(公告)日：2000-05-16
申请号：US653121
申请日：1996-05-24
申请人： Soichiro Arai , Junichi Kai , Hiroshi Yasuda , Shunsuke Hueki , Yoshihisa Oae
发明人： Soichiro Arai , Junichi Kai , Hiroshi Yasuda , Shunsuke Hueki , Yoshihisa Oae
IPC分类号： G21K5/04 , G06F17/10 , G21C5/00 , H01L21/027
CPC分类号： H01J37/20 , B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/153 , H01J37/3026 , H01J37/3174 , H01J2237/0435 , H01J2237/1532 , H01J2237/1534 , H01J2237/20221
摘要： The present invention relates to an exposure method of a multi-beam type in which a stage mounting a sample to be exposed is continuously moved in a first direction, and charged-particle beams are controlled so as to form a desired beam shape as a whole, and in which a pattern is formed on the sample by deflecting the charged-particle beams by a main deflector and a sub deflector. Patterns to be drawn are divided into pattern data on a cell stripe basis which corresponds to an area which can be exposed when the sub deflector scans the charged-particle beams one time. The pattern data on the cell stripe basis is stored into a memory. Then, position data indicative of cell stripes is stored, in an exposure sequence, together with address information concerning the memory in which the pattern data is stored. The deflection amount data relating to the main deflector and the sub deflector is calculated from the position data. Patterns are drawn on the wafer by using the pattern data and the deflection amount data.
摘要翻译：本发明涉及一种多光束类型的曝光方法，其中安装要暴露的样品的载物台在第一方向上连续移动，并且带电粒子束被整体地形成期望的波束形状，并且其中通过由主偏转器和副偏转器偏转带电粒子束而在样品上形成图案。要绘制的图案被划分为细胞条纹基础上的图形数据，其对应于当次偏转器一次扫描带电粒子束时可以暴露的区域。基于单元条带的图案数据被存储到存储器中。然后，指示单元条纹的位置数据与曝光图案数据的存储器的地址信息一起被存储在曝光序列中。根据位置数据计算与主偏转器和副偏转器有关的偏转量数据。通过使用图案数据和偏转量数据在晶片上绘制图案。

22. 发明授权

US5920077A Charged particle beam exposure system 失效
标题翻译：带电粒子束曝光系统
公开(公告)号：US5920077A
公开(公告)日：1999-07-06
申请号：US22881
申请日：1998-02-12
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method including the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage device having a second, higher access speed, reading the dot pattern data out from the second storage device; and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array. The blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：一种带电粒子束曝光方法，包括以下步骤：产生指示要曝光的图案的点阵图形数据，存储指示要曝光的图案的点，将点图案数据存储在具有第一存取速度的第一存储装置中，传送从第一存储装置到具有第二较高访问速度的第二存储装置的点图形数据从第二存储装置读出点图案数据; 以及响应于通过消隐孔径阵列从第二存储装置读出的点图形数据产生多个带电粒子束。消隐孔径阵列包括多个孔，每个孔响应于点图案数据而导致与孔相关的改变的粒子束的导通和关断。

23. 发明授权

US5866300A Method of and system for exposing pattern on object by charged particle beam 失效
公开(公告)号：US5866300A
公开(公告)日：1999-02-02
申请号：US651586
申请日：1996-05-22
申请人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
发明人： Takamasa Satoh , Soichiro Arai , Kenichi Miyazawa , Yoshihisa Ooaeh , Junichi Kai , Hiroshi Yasuda
IPC分类号： G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027
CPC分类号： B82Y10/00 , B82Y40/00 , G03F7/2059 , H01J37/3023 , H01J37/3174 , Y10S430/143
摘要： Before figure data are expanded into a bitmap, a checksum is calculated in unit of bitmap data corresponding to a cell stripe of scanning over which continuous exposure is possible. When the checksum is calculated after expanding the data into the bitmap, the interim calculation result of refocus values is used. In exposure, exposing k number of sub rectangular areas by repeating a sub scanning k number of times, jumping a deflection by a main deflector toward an center of remaining sub rectangular areas whose number is (p-k) inside a main rectangular areas and exposing remained (p-k) number of the sub rectangular areas by repeating the sub scanning (p-k) times after the jumping is settled. In an amplifier & low pass filter for supplying a drive voltage to a sub deflector, the cutoff frequency is lowed during flyback in a sawtooth waveform without changing an amplification factor.

24. 发明授权

US5841145A Method of and system for exposing pattern on object by charged particle beam 失效
标题翻译：通过带电粒子束对物体曝光图案的方法和系统
公开(公告)号：US5841145A
公开(公告)日：1998-11-24
申请号：US610350
申请日：1996-03-04
申请人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
发明人： Takamasa Satoh , Yoshihisa Oae , Soichiro Arai , Kenichi Miyazawa , Hiroshi Yasuda , Manabu Ohno , Hitoshi Watanabe , Junichi Kai , Tomohiko Abe , Akio Yamada , Yasushi Takahashi
IPC分类号： H01J37/302
CPC分类号： H01J37/3023 , H01J2237/3175
摘要： By using a blanking aperture array BAA, the density of the bit map data in the portions where adjacent areas are linked is decreased toward the outside. On the lower surface of the holder of the BAA chip, a ball grid array wired to blanking electrodes is formed, to be pressed in contact against pads on a wiring base board. The registered bit map data for an isosceles right triangle are read out from address A=A0+�RA.multidot.i! (A0 and i are integers, � ! is an operator for integerizing), masked, and then shifted by bits to be deformed. From registered bit map data for proximity effect correction, the area which corresponds to the size of the object of correction and the required degree of proximity affect correction is extracted, and logic operation with the bit map data of the object of correction is performed to achieve proximity affect correction. Before figures data are expanded into bit map, a checksum is determined in units of bit map data corresponding to the range of one session of scanning over which continuous exposure is possible. A sine wave voltage is provided to an electrostatic deflector and during a one-shot exposure period, an electron beam is caused to scan for an integer number of times on a block of a mask and the positional misalignment of the electron beam at the lower aperture stop is corrected.
摘要翻译：通过使用消隐孔径阵列BAA，相邻区域连接的部分中的位图数据的密度朝向外部减小。在BAA芯片的保持器的下表面上形成布线到消隐电极的球栅阵列，以与接线基板上的焊盘压接。从地址A = A0 + [RAxi]（A0和i是整数，[]是整数化的运算符）读出等腰直角三角形的注册位图数据，被屏蔽，然后移位以变形。从用于邻近效应校正的注册位图数据中，提取对应于校正对象的大小的区域和所需的邻近度影响校正程度，并且执行校正对象的位图数据的逻辑运算以实现近距离影响校正。在将图形数据扩展为位图之前，以对应于可能进行连续曝光的一次扫描会话的范围的位图数据为单位确定校验和。向静电偏转器提供正弦波电压，并且在单次曝光期间，使电子束在掩模块上扫描整数次，并且使电子束在下孔处的位置偏移停止更正。

25. 发明授权

US5528048A Charged particle beam exposure system and method 失效
标题翻译：带电粒子束曝光系统及方法
公开(公告)号：US5528048A
公开(公告)日：1996-06-18
申请号：US404830
申请日：1995-03-15
申请人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
发明人： Yoshihisa Oae , Tomohiko Abe , Soichiro Arai , Shigeru Maruyama , Hiroshi Yasuda , Kenichi Miyazawa , Junichi Kai , Takamasa Satoh , Keiichi Betsui , Hideki Nasuno
IPC分类号： H01J37/147 , H01J37/30 , H01J37/302 , H01J37/304 , H01J37/317
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3177 , H01J2237/0435 , H01J2237/30416 , H01J2237/31762 , H01L2223/54466
摘要： A charged particle beam exposure method includes the steps of creating dot pattern data indicative of a pattern to be exposed, storing the dot pattern data in a first storage device having a first access speed, transferring the dot pattern data from the first storage device to a second storage having a second, higher access speed, reading the dot pattern data out from the second storage device, and producing a plurality of charged particle beams in response to the dot pattern data read out from the second storage device by means of a blanking aperture array, wherein the blanking aperture array includes a plurality of apertures each causing turning-on and turning-off of a changed particle beam pertinent to the aperture in response to the dot pattern data.
摘要翻译：带电粒子束曝光方法包括以下步骤：创建指示要曝光的图案的点阵图形数据，将点图案数据存储在具有第一存取速度的第一存储装置中，将点图案数据从第一存储装置传送到第二存储器具有第二较高访问速度，从第二存储设备读出点图案数据，并响应于通过消隐孔径从第二存储设备读出的点图案数据产生多个带电粒子束阵列，其中所述消隐孔阵列包括多个孔，每个孔响应于所述点图案数据而导致与所述孔相关的改变的粒子束的导通和关断。

26. 发明授权

US5399872A Charged-particle beam exposure method 失效
标题翻译：带电粒子束曝光方法
公开(公告)号：US5399872A
公开(公告)日：1995-03-21
申请号：US138219
申请日：1993-10-20
申请人： Hiroshi Yasuda , Junichi Kai , Hisayasu Nishino , Soichiro Arai , Yoshihisa Oae
发明人： Hiroshi Yasuda , Junichi Kai , Hisayasu Nishino , Soichiro Arai , Yoshihisa Oae
IPC分类号： G03F7/20 , H01J37/04 , H01J37/317 , H01L21/027 , H01J37/302
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/045 , H01J37/3174 , H01J2237/0435 , H01J2237/30483 , H01J2237/31766
摘要： A charged-particle beam exposure method is used for a charged-particle beam exposure apparatus equipped with a blanking aperture array plate in which columns are arranged side by side in a first direction, and each of the columns includes a plurality of blanking apertures arranged in a second direction substantially perpendicular to the first direction, a charged-particle beam being moved on a wafer in the first direction. The method includes the steps of (a) determining one of first and second axes of a pattern to be exposed to be a priority axis; (b) projecting an image of the blanking aperture array plate onto the wafer so that the priority axis is perpendicular to the second direction; and (c) deflecting the charged-particle beam so that the wafer is scanned in the direction of the priority axis.
摘要翻译：带电粒子束曝光方法被用于装有消隐孔阵列板的带电粒子束曝光装置，其中柱沿第一方向并排布置，并且每个列包括多个排列孔基本上垂直于第一方向的第二方向，带电粒子束在第一方向上在晶片上移动。该方法包括以下步骤：（a）确定要暴露为优先轴的图案的第一和第二轴之一; （b）将消隐孔阵列板的图像投影到晶片上，使得优先轴线垂直于第二方向; 和（c）使带电粒子束偏转，使得晶片沿着优先权轴的方向被扫描。

27. 发明授权

US5180920A Method and apparatus for making charged particle beam exposure 失效
标题翻译：用于制造带电粒子束曝光的方法和装置
公开(公告)号：US5180920A
公开(公告)日：1993-01-19
申请号：US854086
申请日：1992-03-19
申请人： Junichi Kai , Hiroshi Yasuda , Yoshio Watanabe
发明人： Junichi Kai , Hiroshi Yasuda , Yoshio Watanabe
IPC分类号： H01L21/027 , H01J37/302 , H01L21/30
CPC分类号： H01J37/3174 , B82Y10/00 , B82Y40/00 , H01J37/3026 , H01J2237/30455 , H01J2237/31761
摘要： A charged particle beam exposure method is used to expose an exposure region of a substrate which is placed on a movable stage by irradiating a charged particle beam on the exposure region of the substrate. The method includes the steps of (a) dividing the exposure region into a plurality of band-shaped regions, (b) deflecting the charged particle beam within a drawing range from one side to the other side of each band-shaped region in a longitudinal direction of the band-shaped region while continuously moving the stage in a stage moving direction, where the drawing range is a range in which the charged particle beam can be deflected, (c) monitoring a deflection position of the charged particle beam on the substrate along the stage moving direction, and (d) varying a moving speed of the stage depending on the deflection position relative to one or a plurality of reference positions located along the stage moving direction within the drawing range.
摘要翻译：使用带电粒子束曝光方法，通过在基板的曝光区域照射带电粒子束来曝光放置在可移动台上的基板的曝光区域。该方法包括以下步骤：（a）将曝光区域划分为多个带状区域，（b）使带电粒子束在纵向的每个带状区域的一侧到另一侧的拉伸范围内偏转在阶段移动方向上连续移动载物台的方向，其中拉伸范围是带电粒子束可以偏转的范围，（c）监测带电粒子束在基底上的偏转位置沿着载物台移动方向，和（d）根据相对于在拉伸范围内沿着载物台移动方向定位的一个或多个基准位置的偏转位置改变载物台的移动速度。

28. 发明授权

US4950910A Electron beam exposure method and apparatus 失效
标题翻译：电子束曝光方法及装置
公开(公告)号：US4950910A
公开(公告)日：1990-08-21
申请号：US304242
申请日：1989-01-31
申请人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
发明人： Hiroshi Yasuda , Junichi Kai , Shinji Miyaki , Yasushi Takahashi
IPC分类号： G03F9/00 , G03F7/20 , H01J37/302 , H01J37/317 , H01L21/027 , H01L21/30
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/3023 , H01J37/3174 , H01J2237/30411 , H01J2237/31766 , H01J2237/31767
摘要： A method for depicting a pattern on a sample having a plurality of exposure areas placed on a movable stage by irradiating an electron beam. A pattern density is calculated from data of a pattern to be exposed for every exposure area on the sample. Next, the calculated pattern density is compared with a predetermined pattern density. Then when the calculated pattern density in a first exposure area contained in said exposure pattern area is less than the predetermined pattern density, the pattern is depicted therein by a continuous stage moving process. On the other hand, when the calculated pattern density in a second exposure area contained in the exposure areas is equal or greater than the predetermined pattern density, the pattern is depicted therein by a step and repeat process.

29. 发明授权

US4516030A Scanning electron beam exposure system 失效
标题翻译：扫描电子束曝光系统
公开(公告)号：US4516030A
公开(公告)日：1985-05-07
申请号：US423644
申请日：1982-09-27
申请人： Haruo Tsuchikawa , Junichi Kai
发明人： Haruo Tsuchikawa , Junichi Kai
IPC分类号： G03F1/00 , G03F1/54 , G03F7/20 , H01J37/18 , H01J37/317 , H01L21/027 , H01L21/30 , B65G65/30 , H01J37/00
CPC分类号： B82Y10/00 , B82Y40/00 , H01J37/18 , H01J37/3174 , H01L21/30 , H01J2237/184 , H01J2237/204 , H01J2237/31766 , H01J2237/31767
摘要： A scanning electron beam exposure system which comprises a main chamber (1), a subchamber (8), vacuum pumps (12, 13) and valves (10, 11, 14.about.16). The projection of an electron beam onto a workpiece within the main chamber is inhibited while an electrical or mechanical noise generated by at least one of the valves substantially exists.
摘要翻译：一种扫描电子束曝光系统，包括主室（1），子室（8），真空泵（12,13）和阀（10,11,14 D差分16）。电子束在主室内的工件上的投射被抑制，同时由至少一个阀门产生的电气或机械噪声基本上存在。

30. 发明授权

US5610406A Charged particle beam exposure method and apparatus 失效
标题翻译：带电粒子束曝光方法和装置
公开(公告)号：US5610406A
公开(公告)日：1997-03-11
申请号：US410294
申请日：1995-03-24
申请人： Junichi Kai , Mitsuhiro Nakano
发明人： Junichi Kai , Mitsuhiro Nakano
IPC分类号： H01L21/027 , H01J37/304 , H01J37/04
CPC分类号： H01J37/304 , H01J2237/20285 , H01J2237/3175
摘要： A charged particle beam exposure method which irradiates a charged particle beam on a substrate placed on a stage while continuously moving the stage and deflecting the charged particle beam by main deflector means and sub deflector means. The charged particle beam exposure method includes the steps of calculating stage moving information which describes an optimum expected locus of a stage moving speed with respect to a frame region based on a stage moving speed that enables exposure within each cell region within the frame region, by defining the frame region as being made up of a plurality of cell regions arranged in a moving direction of the stage within a drawable range in which the charged particle beam can be deflected by the main deflector means, and controlling a deflected position of the charged particle beam caused by the main deflector means by variably controlling the stage moving speed based on said stage moving information.
摘要翻译：一种带电粒子束曝光方法，其在连续移动所述载物台并且通过主偏转器装置和副偏转装置偏转所述带电粒子束的同时，将放电的粒子束照射在载置在载物台上的基板上。带电粒子束曝光方法包括以下步骤：基于能够在帧区域内的每个单元区域内进行曝光的载物台移动速度，通过以下步骤计算载物台移动速度相对于框架区域的最佳期望轨迹的步骤：将所述框架区域限定为在所述台架的移动方向上布置的多个单元区域，所述多个单元区域在所述带电粒子束可被所述主偏转器装置偏转的可绘制范围内，并且控制所述带电粒子的偏转位置通过可变地控制基于所述载物台移动信息的载物台移动速度，由主偏转装置引起的光束。

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