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21. 发明授权

US08477477B2 Power storage device 有权
标题翻译：蓄电装置
公开(公告)号：US08477477B2
公开(公告)日：2013-07-02
申请号：US12890867
申请日：2010-09-27
申请人： Kyosuke Ito , Kiyofumi Ogino
发明人： Kyosuke Ito , Kiyofumi Ogino
IPC分类号： H01G9/00
CPC分类号： H01G9/035
摘要： To provide an electrolyte easily manufactured at low cost, and a power storage device including such an electrolyte. The power storage device includes a positive electrode having a positive electrode current collector and a positive electrode active material, a negative electrode having a negative electrode current collector and a negative electrode active material, and an electrolyte having 1-piperidine-1-propanesulfonic acid or 1-piperidine-1-butanesulfonic acid, which is provided between the positive electrode and the negative electrode. The capacitance can be increased when water is added to the obtained electrolyte and the temperature of the power storage device rises.
摘要翻译：提供以低成本容易制造的电解质，以及包括这种电解质的蓄电装置。蓄电装置包括具有正极集电体和正极活性物质的正极，具有负极集电体的负极和负极活性物质，以及具有1-哌啶-1-丙磺酸的电解质或设置在正极和负极之间的1-哌啶-1-丁磺酸。当将水添加到所获得的电解质中并且蓄电装置的温度升高时，电容可以增加。

22. 发明授权

US07534724B2 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same 有权
标题翻译：制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
公开(公告)号：US07534724B2
公开(公告)日：2009-05-19
申请号：US11970318
申请日：2008-01-07
申请人： Osamu Nakamura , Kiyofumi Ogino
发明人： Osamu Nakamura , Kiyofumi Ogino
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , G09G2300/0814 , H01L21/288 , H01L21/76838 , H01L27/3244 , H01L27/3276 , H01L51/56 , H01L2251/5315 , H01L2251/5323
摘要： As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wing formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
摘要翻译：作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成较小的布线。在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。在本发明中，在翼形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成布线。根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

23. 发明授权

US07470621B2 Method for manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US07470621B2
公开(公告)日：2008-12-30
申请号：US11480895
申请日：2006-07-06
申请人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
发明人： Taichi Endo , Teruyuki Fujii , Kiyofumi Ogino
IPC分类号： H01L21/302
CPC分类号： G03F7/2024 , G03F7/0007 , H01L27/3244 , H01L51/5284 , H01L2251/5315
摘要： It is an object of the present invention to provide a method for manufacturing a semiconductor device that can suppress generation of a crack and peeling in a resin BM and deterioration of coverage of an upper layer of the resin BM, even if a black resin is used as a material of the resin BM in order to improve a contrast of brightness and a contrast of color. As a method for manufacturing a semiconductor device, a non-photosensitive black resin layer is formed over a substrate, a positive resist film is formed over the non-photosensitive black resin layer, the positive resist film is exposed, a resin black matrix layer made of the non-photosensitive black resin layer is formed over the substrate by developing the positive resist film by using a first developing solution and by etching the non-photosensitive black resin layer, a non-exposed positive resist film over the resin black matrix layer, which remains after the development, is exposed, and the positive resist film is removed by using a second developing solution.
摘要翻译：本发明的目的是提供一种半导体器件的制造方法，即使使用黑色树脂，也能够抑制树脂BM的裂纹产生和树脂BM的剥离以及树脂BM的上层的覆盖的劣化作为树脂BM的材料，以提高亮度的对比度和颜色的对比度。作为半导体器件的制造方法，在基板上形成非感光性黑色树脂层，在非感光性黑色树脂层上形成正性抗蚀剂膜，曝光正性抗蚀剂膜，使树脂黑色矩阵层通过使用第一显影液显影正性抗蚀剂膜并通过在树脂黑色矩阵层上蚀刻非感光性黑色树脂层，未曝光的正性抗蚀剂膜，在基材上形成非感光性黑色树脂层，在显影后保留，曝光，通过使用第二显影液除去正性抗蚀剂膜。

24. 发明授权

US07208869B2 Light emitting device and method of manufacturing the same 有权
标题翻译：发光元件及其制造方法
公开(公告)号：US07208869B2
公开(公告)日：2007-04-24
申请号：US10940011
申请日：2004-09-14
申请人： Kiyofumi Ogino , Noriko Shibata
发明人： Kiyofumi Ogino , Noriko Shibata
IPC分类号： H05B33/00 , H05B33/14
CPC分类号： H01L27/3211 , H01L51/0036 , H01L51/0037 , H01L51/0038 , H01L51/0039 , H01L51/0059 , H01L51/0077 , H01L51/0081 , H01L51/0084 , H01L51/5225 , H01L51/5228 , H01L51/56
摘要： An easier method is provided to manufacture a light emitting device that can display a full-color image using a polymeric organic compound. In the present invention, some of polymeric organic compounds are dissolved in a protic solvent while the others are dissolved in an aprotic solvent and the obtained solutions are applied to form organic compound films having laminate structures. A conductive film to serve as an etching stopper is formed on the organic compound films, so that portions of the organic compound films that do not overlap the conductive film are etched away. By using wet etching and dry etching in combination, different organic compound films each composed of a plurality of polymeric organic compounds can be formed in different light emitting elements on the same substrate.
摘要翻译：提供了一种更容易的方法来制造可以使用聚合有机化合物显示全色图像的发光装置。在本发明中，将一些聚合有机化合物溶解在质子溶剂中，而将其它溶解在非质子溶剂中，并将所得溶液施用以形成具有层压结构的有机化合物膜。在有机化合物膜上形成用作蚀刻阻挡层的导电膜，使得不与导电膜重叠的部分有机化合物膜被蚀刻掉。通过组合使用湿蚀刻和干蚀刻，可以在同一基板上的不同发光元件中形成各自由多种聚合物有机化合物构成的不同有机化合物膜。

25. 发明申请

US20050095356A1 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same 有权
标题翻译：制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
公开(公告)号：US20050095356A1
公开(公告)日：2005-05-05
申请号：US10946649
申请日：2004-09-22
申请人： Osamu Nakamura , Kiyofumi Ogino
发明人： Osamu Nakamura , Kiyofumi Ogino
IPC分类号： G02F1/1368 , B01J35/02 , B05D3/00 , B05D5/12 , C08J7/18 , G21H1/00 , H01L21/027 , H01L21/28 , H01L21/288 , H01L21/3205 , H01L21/336 , H01L21/768 , H01L27/32 , H01L29/786 , H01L51/00 , H01L51/56
CPC分类号： H01L51/0022 , G09G2300/0814 , H01L21/288 , H01L21/76838 , H01L27/3244 , H01L27/3276 , H01L51/56 , H01L2251/5315 , H01L2251/5323
摘要： As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
摘要翻译：作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成较小的布线。在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。在本发明中，在布线形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成配线。根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

26. 发明申请

US20120308894A1 POWER STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：蓄电装置及其制造方法
公开(公告)号：US20120308894A1
公开(公告)日：2012-12-06
申请号：US13484299
申请日：2012-05-31
申请人： Teppei Oguni , Takeshi Osada , Toshihiko Takeuchi , Kuniharu Nomoto , Kiyofumi Ogino , Hiroatsu Todoriki , Junpei Momo , Nobuhiro Inoue
发明人： Teppei Oguni , Takeshi Osada , Toshihiko Takeuchi , Kuniharu Nomoto , Kiyofumi Ogino , Hiroatsu Todoriki , Junpei Momo , Nobuhiro Inoue
IPC分类号： H01M4/583 , H01G7/00 , H01G9/04 , H01M4/04
CPC分类号： H01M4/364 , H01M4/134 , H01M4/386 , H01M10/0525 , Y10T29/43 , Y10T29/49115
摘要： A negative electrode and a power storage device are provided, which have one of an alloy-based particle and an alloy-based whisker and a carbon film including 1 to 50 graphene layers. A surface of the alloy-based particle or the alloy-based whisker is covered with the carbon film. In addition, a method of manufacturing a negative electrode and a method of manufacturing a power storage device are provided, which have the step of mixing an alloy-based particle or an alloy-based whisker with graphene oxide, and the step of heating the mixture in a vacuum or in a reducing atmosphere.
摘要翻译：提供一种负极和蓄电装置，其具有合金基颗粒和合金基晶须中的一种以及包含1至50个石墨烯层的碳膜。合金基颗粒或合金基晶须的表面被碳膜覆盖。此外，提供了制造负极的方法和制造蓄电装置的方法，其具有将合金基颗粒或合金基晶须与氧化石墨烯混合的步骤，以及加热混合物的步骤在真空或还原气氛中。

27. 发明申请

US20120242292A1 METHOD FOR MANUFACTURING AND OPERATING POWER STORAGE DEVICE 有权
标题翻译：蓄电装置的制造和运行方法
公开(公告)号：US20120242292A1
公开(公告)日：2012-09-27
申请号：US13427134
申请日：2012-03-22
申请人： Kiyofumi Ogino
发明人： Kiyofumi Ogino
IPC分类号： H02J7/00 , H01M10/04
CPC分类号： H01M10/443 , H01M10/052 , H01M10/0562 , H01M10/0585 , H01M2300/0065 , H01M2300/0091 , H02J7/0075 , Y02T10/7011 , Y10T29/49108
摘要： A power storage device including a solid electrolyte and operating at room temperature and a power storage device including a solid electrolyte and having higher discharge capacity are manufactured. The power storage devices are each manufactured in the following manner: an electrolyte including an ion-conducting high polymer, an inorganic oxide, and a lithium electrolyte salt is provided between a positive electrode and a negative electrode; charge at a first current value is performed and then a charge at a first voltage value obtained by the charge at the first current value is performed, between the positive electrode and the negative electrode at room temperature; and discharge at a second current value is performed after the charge at the first voltage value is performed.
摘要翻译：制造包括固体电解质并在室温下操作的蓄电装置和包括固体电解质并具有较高放电容量的蓄电装置。蓄电装置各自以下述方式制造：在正极和负极之间设置包含离子导电性高分子，无机氧化物和锂电解质盐的电解质，执行第一电流值的充电，然后在室温下在正极和负极之间执行通过在第一电流值的电荷获得的第一电压值的电荷; 并且在执行第一电压值的电荷之后执行在第二电流值的放电。

28. 发明申请

US20120148924A1 POWER STORAGE DEVICE AND METHOD FOR MANUFACTURING THE POWER STORAGE DEVICE 审中-公开
标题翻译：蓄电装置及制造蓄电装置的方法
公开(公告)号：US20120148924A1
公开(公告)日：2012-06-14
申请号：US13308867
申请日：2011-12-01
申请人： Kiyofumi Ogino , Kuniharu Nomoto , Teppei Oguni , Mako Motoyoshi
发明人： Kiyofumi Ogino , Kuniharu Nomoto , Teppei Oguni , Mako Motoyoshi
IPC分类号： H01M10/056 , H01G9/022 , H01G9/028 , H01M10/04
CPC分类号： H01G11/06 , H01G11/56 , H01M10/052 , H01M10/0566 , H01M10/0567 , H01M10/0568 , H01M10/0569 , H01M10/058 , H01M2300/0025 , Y02E60/13 , Y10T29/49108 , Y10T29/49115
摘要： To provide a power storage device having a solid electrolyte, in which a charge-discharge capacity can be increased, and a method for manufacturing the power storage device. The power storage device includes a positive electrode, a negative electrode, and an electrolyte provided between the positive electrode and the negative electrode, and the electrolyte includes an ion-conductive high molecular compound, an inorganic oxide, and a lithium salt, and the inorganic oxide is included in the electrolyte at more than 30 wt % and 50 wt % or less to the total of the ion-conductive high molecular compound and the inorganic oxide.
摘要翻译：提供具有可提高充放电容量的固体电解质的蓄电装置以及蓄电装置的制造方法。蓄电装置包括正极，负极和设置在正极和负极之间的电解质，电解质包括离子导电性高分子化合物，无机氧化物和锂盐，无机物氧化物相对于离子导电性高分子化合物和无机氧化物的总和大于30重量％且为50重量％以下。

29. 发明授权

US07332432B2 Method for manufacturing wiring, thin film transistor, light emitting device and liquid crystal display device, and droplet discharge apparatus for forming the same 有权
标题翻译：制造布线，薄膜晶体管，发光装置和液晶显示装置的方法以及用于形成它的液滴喷射装置
公开(公告)号：US07332432B2
公开(公告)日：2008-02-19
申请号：US10946649
申请日：2004-09-22
申请人： Osamu Nakamura , Kiyofumi Ogino
发明人： Osamu Nakamura , Kiyofumi Ogino
IPC分类号： H01L21/44
CPC分类号： H01L51/0022 , G09G2300/0814 , H01L21/288 , H01L21/76838 , H01L27/3244 , H01L27/3276 , H01L51/56 , H01L2251/5315 , H01L2251/5323
摘要： As a semiconductor device, specifically, a pixel portion included in a semiconductor device is made to have higher precision and higher aperture ratio, it is required to form a smaller wiring in width. In the case of forming a wiring by using an ink-jet method, a dot spreads on a wiring formation surface, and it is difficult to narrow width of a wiring. In the present invention, a photocatalytic substance typified by TiO2 is formed on a wiring formation surface, and a wiring is formed by utilizing photocatalytic activity of the photocatalytic substance. According to the present invention, a narrower wiring, that is, a smaller wiring in width than a diameter of a dot formed by an ink-jet method can be formed.
摘要翻译：作为半导体装置，具体地说，将包括在半导体器件中的像素部分制成具有更高的精度和更高的开口率，需要在宽度上形成更小的布线。在通过喷墨法形成布线的情况下，点布线在布线形成面上，难以缩小布线的宽度。在本发明中，在布线形成面上形成以TiO 2为代表的光催化剂物质，利用光催化剂的光催化活性形成配线。根据本发明，可以形成较窄的布线，即宽度小于通过喷墨法形成的点的直径的布线。

30. 发明授权

US07259110B2 Manufacturing method of display device and semiconductor device 有权
标题翻译：显示器件和半导体器件的制造方法
公开(公告)号：US07259110B2
公开(公告)日：2007-08-21
申请号：US11114870
申请日：2005-04-26
申请人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
发明人： Hideto Ohnuma , Kiyofumi Ogino , Teruyuki Fujii
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L27/1292
摘要： It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mPa·s to 50 mPa·s.
摘要翻译：本发明的目的是通过使绝缘层的厚度均匀化来改善膜的表面平坦度。此外，本发明的另一个目的是提供一种使用绝缘层以低成本制造高清晰度和高质量显示装置的电子装置的制造技术。在根据本发明的半导体器件的制造方法中，形成半导体层; 在半导体层上形成绝缘层; 连接到半导体层的布线层形成在设置在绝缘层中的开口中; 形成与布线层连接的电极层。绝缘层通过旋涂法，其中含有绝缘材料的组合物形成，该组合物的粘度为10mPa.s至50mPa.s。

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