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    • 8. 发明申请
    • ELECTROCHEMICAL CAPACITOR
    • 电化学电容器
    • US20110075322A1
    • 2011-03-31
    • US12891321
    • 2010-09-27
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • Kazutaka KurikiKiyofumi OginoYumiko Saito
    • H01G9/155
    • H01G11/76H01G11/02H01G11/10H01G11/56H01G11/62H01G11/72Y02E60/13
    • An electrochemical capacitor capable of increasing a capacity is proposed. The electrochemical capacitor is a positive electrode and a negative electrode formed over a surface plane of a substrate. Additionally, the electrochemical capacitor has an electrolyte, and the positive electrode and the negative electrode are in contact with a same surface plane of the electrolyte. In other words, the electrochemical capacitor has a positive electrode active material and a negative electrode active material over a surface plane of an electrolyte, a positive electrode current collector which is in contact with the positive electrode active material, and a negative electrode current collector which is in contact with the negative electrode active material. By the aforesaid structure, a capacity of the electrochemical capacitor can be increased.
    • 提出了能增加容量的电化学电容器。 电化学电容器是在基板的表面平面上形成的正极和负极。 此外,电化学电容器具有电解质,正极和负极与电解质的相同的表面接触。 换句话说,电化学电容器在电解质的表面上具有正极活性物质和负极活性物质,与正极活性物质接触的正极集电体和负极集电体 与负极活性物质接触。 通过上述结构,能够提高电化学电容器的容量。
    • 10. 发明申请
    • Manufacturing method of display device and semiconductor device
    • 显示器件和半导体器件的制造方法
    • US20050245078A1
    • 2005-11-03
    • US11114870
    • 2005-04-26
    • Hideto OhnumaKiyofumi OginoTeruyuki Fujii
    • Hideto OhnumaKiyofumi OginoTeruyuki Fujii
    • H01L21/44H01L21/77
    • H01L27/1292
    • It is an object of the present invention to improve the surface planarity of a film by uniforming the thickness of an insulating layer. Further, it is another object of the invention to provide a technology for manufacturing an electronic device typified by a high-definition and high-quality display device with high yield at low cost with the use of the insulating layer. In a method for manufacturing a semiconductor device according to the invention, a semiconductor layer is formed; an insulating layer is formed over the semiconductor layer; a wiring layer connected to the semiconductor layer is formed in an opening provided in the insulating layer; and an electrode layer connected to the wiring layer is formed. The insulating layer is formed by spin coating with a composition containing an insulating material, which has a viscosity of from 10 mP·s to 50 mP·s.
    • 本发明的目的是通过使绝缘层的厚度均匀化来改善膜的表面平坦度。 此外,本发明的另一个目的是提供一种使用绝缘层以低成本制造高清晰度和高质量显示装置的电子装置的制造技术。 在根据本发明的半导体器件的制造方法中,形成半导体层; 在半导体层上形成绝缘层; 连接到半导体层的布线层形成在设置在绝缘层中的开口中; 形成与布线层连接的电极层。 绝缘层通过使用粘合剂为10mP.s至50mP.s.的包含绝缘材料的组合物进行旋涂而形成。