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21. 发明申请

US20060077601A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060077601A1
公开(公告)日：2006-04-13
申请号：US11222780
申请日：2005-09-12
申请人： Hiroyuki Ikeda , Kazuo Tanaka , Hiroyasu Ishizuka , Koichiro Takakuwa
发明人： Hiroyuki Ikeda , Kazuo Tanaka , Hiroyasu Ishizuka , Koichiro Takakuwa
IPC分类号： H02H9/00
CPC分类号： H01L27/0251
摘要： The invention intends to provide a semiconductor device capable of preventing an electrostatic breakdown especially by the CDM, of the electrostatic breakdowns generated between plural power supply systems, with a few number of protection circuits. The semiconductor device includes a first circuit block that operates with a first power supply voltage and a first reference voltage, and a second circuit block that operates with a second power supply voltage and a second reference voltage. Further, the semiconductor device includes a first clamp circuit that clamps a potential between the first power supply voltage and the second reference voltage, a second clamp circuit that clamps a potential between the second power supply voltage and the first reference voltage, and a third clamp circuit that clamps a potential between the first reference voltage and the second reference voltage.
摘要翻译：本发明旨在提供一种半导体器件，其能够防止特别是CDM的静电击穿在多个电源系统之间产生的静电击穿与少数保护电路。半导体器件包括以第一电源电压和第一参考电压工作的第一电路块，以及以第二电源电压和第二参考电压工作的第二电路块。此外，半导体器件包括钳位第一电源电压和第二参考电压之间的电位的第一钳位电路，钳位第二电源电压和第一参考电压之间的电位的第二钳位电路和第三钳位电路电路，钳位第一参考电压和第二参考电压之间的电位。

22. 发明授权

US06977771B2 Optical amplifier supervisory control method in WDM communication system 有权
标题翻译： WDM通信系统中的光放大器监控方法
公开(公告)号：US06977771B2
公开(公告)日：2005-12-20
申请号：US10083162
申请日：2002-02-27
申请人： Taro Asao , Nobuyuki Nemoto , Kazuo Tanaka , Kazunori Horachi
发明人： Taro Asao , Nobuyuki Nemoto , Kazuo Tanaka , Kazunori Horachi
IPC分类号： H01S3/067 , H01S3/131 , H04B10/07 , H04B10/077 , H04B10/079 , H04B10/29 , H04B10/293 , H04B10/296 , H04B10/564 , H04B10/572 , H04J14/00 , H04J14/02 , H01S3/00 , H04B10/16
CPC分类号： H04B10/296 , H01S3/06754 , H01S3/06758 , H01S3/10015 , H01S3/10069 , H01S3/1301 , H04B10/032 , H04B10/0775 , H04B10/0777 , H04B2210/08 , H04J14/0221 , H04J14/0283 , H04J14/0295
摘要： The gain control circuit controls the amplification ratio of EDFA based on the results of having measured the input power monitor which monitors the EDFA input optical level which amplifies light and of having measured the output power monitor which monitors the output optical level. The optical pre-amplifier receives a notice of the number of wavelengths from a fore node and a notice of whether the optical post-amplifier of a fore node is in normal operation by a supervisory control signal, and changes over the gain control circuit to either the ALC or AGC mode. When the number of wavelengths changes while the optical pre-amplifier is operating in the ALC mode, the optical pre-amplifier is controlled in the AGC mode using the backed-up amplifier gain. Also, the gain value when the optical pre-amplifier is in routine operation is backed up in an amplifier gain back-up unit and an back-up unit.
摘要翻译：增益控制电路根据测量输入功率监视器的结果控制EDFA的放大率，该输入功率监视器监视放大光的EDFA输入光学电平并测量监视输出光学电平的输出功率监视器。光学前置放大器接收来自前级节点的波长数的通知，以及通过监视控制信号通知前级节点的光学后置放大器是否处于正常工作状态，并将增益控制电路改变为 ALC或AGC模式。当光学前置放大器在ALC模式下工作时，当波长数量变化时，光学前置放大器将使用后备放大器增益控制在AGC模式。此外，当光学前置放大器处于常规操作时的增益值被备份在放大器增益备份单元和备用单元中。

23. 发明申请

US20050266797A1 Radio communication system 失效
标题翻译：无线通信系统
公开(公告)号：US20050266797A1
公开(公告)日：2005-12-01
申请号：US10530976
申请日：2004-07-22
申请人： Kuniaki Utsumi , Hiroaki Yamamoto , Kouichi Masuda , Tsutomu Niiho , Mariko Nakaso , Kazuo Tanaka , Hiroyuki Sasai
发明人： Kuniaki Utsumi , Hiroaki Yamamoto , Kouichi Masuda , Tsutomu Niiho , Mariko Nakaso , Kazuo Tanaka , Hiroyuki Sasai
IPC分类号： H04B7/005 , H04B10/00 , H04B10/071 , H04B10/077 , H04B10/079 , H04B10/272 , H04J13/00 , H04W52/04 , H04W52/14 , H04W52/24 , H04W88/08 , H04W92/00 , H04B7/14
CPC分类号： H04W52/143 , H04B10/25754 , H04W52/24 , H04W88/085
摘要： The present invention is directed to a wireless communication system capable of keeping a level of a wireless signal received by a relay apparatus (20) within a predetermined dynamic range. In a control apparatus (10), a transmitting section (102) converts a downstream electric signal into a downstream optical signal and transmits the downstream optical signal to the relay apparatus (20) via an optical transmission path (40). The relay apparatus (20) converts the received downstream optical signal into a downstream electric signal and transmits the downstream electric signal as a wireless signal to a wireless communication terminal (30) from a transmitting/receiving antenna section (204). In the relay apparatus (20), a level adjustment section (207) adjusts the level of the wireless signal transmitted by the relay apparatus (20) such that the receiving level of the wireless signal received by the relay apparatus is kept within a predetermined range.
摘要翻译：本发明涉及能够将由中继装置（20）接收的无线信号的电平保持在规定动态范围内的无线通信系统。在控制装置（10）中，发送部（102）将下行电信号转换为下行光信号，经由光传输路径（40）将下行光信号发送给中继装置（20）。中继装置（20）将接收到的下行光信号转换为下行电信号，并将发送/接收天线部（204）的下行电信号作为无线信号发送到无线通信终端（30）。在中继装置（20）中，电平调整部（207）调整由中继装置（20）发送的无线信号的电平，使得由中继装置接收到的无线信号的接收电平保持在预定范围内。

24. 发明申请

US20050266685A1 Method and apparatus for controlling a semiconductor fabrication temperature 审中-公开
标题翻译：用于控制半导体制造温度的方法和装置
公开(公告)号：US20050266685A1
公开(公告)日：2005-12-01
申请号：US11153223
申请日：2005-06-15
申请人： Minoru Nakano , Masaaki Ueno , Kazuo Tanaka
发明人： Minoru Nakano , Masaaki Ueno , Kazuo Tanaka
IPC分类号： H01L21/205 , C23C16/46 , G05D23/19 , H01L21/00 , H01L21/44
CPC分类号： G05D23/1935 , H01L21/67248
摘要： In a method for controlling temperatures in a semiconductor manufacturing apparatus including a reaction chamber and a plurality of heating sources, a set of power ratios to be fed to the heating sources is determined for each of two or more selected temperatures. Then, a temperature of the reaction chamber is controlled by performing power control on the heating sources based on at least one set of power ratios obtained.
摘要翻译：在用于控制包括反应室和多个加热源的半导体制造装置中的温度的方法中，针对两个或多个所选择的温度中的每一个确定要供给到加热源的一组功率比。然后，通过基于获得的至少一组功率比，对加热源进行功率控制来控制反应室的温度。

25. 发明授权

US06900774B2 Shielding device for antenna board, and liquid ejection apparatus incorporating the same 失效
标题翻译：用于天线板的屏蔽装置和包括该屏蔽装置的液体喷射装置
公开(公告)号：US06900774B2
公开(公告)日：2005-05-31
申请号：US10652240
申请日：2003-09-02
申请人： Kunio Kawakami , Osamu Koshiishi , Kazuo Tanaka , Osamu Hanamura
发明人： Kunio Kawakami , Osamu Koshiishi , Kazuo Tanaka , Osamu Hanamura
IPC分类号： B41J2/175 , B41J29/00 , H01Q1/52 , G01D11/00
CPC分类号： H01Q1/52
摘要： A first plate member constitutes a part of a main frame of a liquid ejection apparatus. A second plate member is extended from the first plate member such that a first part thereof opposes to a traveling path of a carriage which carries a plurality of liquid containers each provided with an IC chip and a receiving antenna. A transmission antenna is provided on an antenna board. The antenna board is mounted on the first part of the second plate member. The second plate member is formed with a first region which allows the transmission antenna to establish radio communication with the receiving antenna, and a second region which shields radio waves.
摘要翻译：第一板构件构成液体喷射装置的主框架的一部分。第二板构件从第一板构件延伸，使得其第一部分与承载多个液体容器的托架的行进路径相对，每个液体容器均设置有IC芯片和接收天线。在天线板上设置发送天线。天线板安装在第二板构件的第一部分上。第二板构件形成有允许发射天线与接收天线建立无线电通信的第一区域和屏蔽无线电波的第二区域。

26. 发明授权

US06579990B2 Process for producing refined pyromellitic acid and refined pyromellitic anhydride 失效
公开(公告)号：US06579990B2
公开(公告)日：2003-06-17
申请号：US09933075
申请日：2001-08-21
申请人： Kazuo Tanaka , Atsushi Okoshi , Kengi Nakaya
发明人： Kazuo Tanaka , Atsushi Okoshi , Kengi Nakaya
IPC分类号： C07D49300
CPC分类号： C07C51/56 , C07C51/43 , C07C51/573 , C07C63/313
摘要： A process for refined pyromellitic anhydride which comprises dissolving crude pyromellitic acid or crude pyromellitic anhydride in water, then cooling an aqueous solution thus obtained to perform crystallization as pyromellitic acid, then separating a crystal thus obtained from water, then anhydrating the crystal of pyromellitic acid thus separated with heating to produce pyromellitic anhydride, then vaporizing pyromellitic anhydride thus produced, cooling vapor of pyromellitic anhydride thus obtained, and thereby, recovering a refined crystal of pyromellitic anhydride.

27. 发明授权

US06472540B1 Process for producing &egr;-caprolactone 失效
标题翻译：生产ε-己内酯的方法
公开(公告)号：US06472540B1
公开(公告)日：2002-10-29
申请号：US09617547
申请日：2000-07-14
申请人： Kazuo Tanaka , Atsushi Okoshi , Hiroshi Ogawa
发明人： Kazuo Tanaka , Atsushi Okoshi , Hiroshi Ogawa
IPC分类号： C07D31304
CPC分类号： C07D313/04
摘要： What is disclosed is a process for producing &egr;-caprolactone which comprises removing impurities by distillation from a reaction mixture obtained by co-oxidation of cyclohexanone and aldehyde, wherein &egr;-caprolactone separated from a purifying column is contacted with oxygen containing gas in the presence of cobalt. High boiling point components are removed to give an acid value of lower than 0.15 mgKOH/g. Thereby, a high quality &egr;-caprolactone providing improved polymer appearance is produced advantageously on an industrial scale without repeated purifying distillations or without using expensive stabilizer or adsorbent for the improvement of color.
摘要翻译：公开的是一种生产ε-己内酯的方法，其包括通过环己酮和醛的共氧化反应获得的反应混合物中的杂质除去杂质，其中在纯化塔分离的ε-己内酯与含氧气体在存在下接触钴。除去高沸点成分，得到低于0.15mgKOH / g的酸值。因此，提供改善的聚合物外观的高品质ε-己内酯有利地在工业规模上生产，而无需重复纯化蒸馏或不使用昂贵的稳定剂或吸附剂来改善颜色。

28. 发明授权

US06361738B1 Method of producing R-Fe-B permanent magnet, and lubricant agent and release agent for use in shaping the same 有权
标题翻译：生产R-Fe-B永磁体的方法，以及用于成型R-Fe-B永磁体的润滑剂和脱模剂
公开(公告)号：US06361738B1
公开(公告)日：2002-03-26
申请号：US09446334
申请日：2000-03-28
申请人： Yuji Kaneko , Junichiro Baba , Kazuo Tanaka , Shizuo Mori
发明人： Yuji Kaneko , Junichiro Baba , Kazuo Tanaka , Shizuo Mori
IPC分类号： B22F312
CPC分类号： B22F1/0059 , H01F1/0577
摘要： The method of producing an R—Fe—B magnet of the present invention is characterized in that R—Fe—B alloy fine powder is molded in a magnetic field and sintered using a lubricant for molding magnets containing specific components, individually or as a mixture, of specific amounts of methyl caproate and/or methyl caprylate, which provide high crystal orientation, and lubricant comprising depolymerized polymer for improving molded article strength, or a lubricant for molding magnets wherein Ti coupling agent that improves crystal orientation is added to this lubricant for molding magnets. Each particle of the fine powder has a high degree of crystal orientation in the direction of the magnetic field, and molded article strength is markedly improved, leading to improved mass-productivity and yield. Moreover, the above-mentioned lubricants do not react with this magnet powder during sintering and are emitted as a gas. Therefore, binder removal performance is excellent and as a result, an increase in the amount of C remaining in the sintered compact is inhibited, to obtain an R—Fe—B permanent magnet with high Br and iHc properties.
摘要翻译：本发明的R-Fe-B磁体的制造方法的特征在于，R-Fe-B合金细粉末在磁场中成型，并使用用于成型含有特定成分的磁体的润滑剂单独或作为混合物的特定量的提供高结晶取向的己酸甲酯和/或辛酸甲酯，以及包含用于提高成型体强度的解聚聚合物的润滑剂或用于成型磁体的润滑剂，其中将用于改善结晶取向的Ti偶联剂加入到该润滑剂中成型磁铁。细粉末的每个颗粒在磁场方向上具有高度的晶体取向，并且模制品强度显着提高，从而提高了批量生产率和产率。此外，上述润滑剂在烧结期间不与该磁粉反应，作为气体排出。因此，除去粘合剂的性能优异，因此抑制烧结体中剩余C量的增加，得到Br和iHc特性高的R-Fe-B永磁体。

29. 发明授权

US06251542B1 Semiconductor wafer etching method 失效
标题翻译：半导体晶片蚀刻方法
公开(公告)号：US06251542B1
公开(公告)日：2001-06-26
申请号：US09188565
申请日：1998-11-10
申请人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
发明人： Masahiro Tomita , Yasuo Souki , Motoki Ito , Kazuo Tanaka , Hiroshi Tanaka
IPC分类号： H01L21302
CPC分类号： H01L21/30608 , H01L21/02019 , H01L21/31127 , H01L21/3121 , Y10S438/928
摘要： A semiconductor wafer etching method is disclosed that allows etching without use of restricted ozone-destroying solvents such as trichloroethane or fluorocarbons. This method involves forming a protective film of silicon resin or alkali resistant resin on a semiconductor wafer. Then, a surface region of the wafer not covered by the protective film is etched. Finally, the protective film is peeled from the semiconductor wafer without damaging the wafer or employing solvents harmful to the environment.
摘要翻译：公开了半导体晶片蚀刻方法，其允许在不使用限制性的臭氧破坏溶剂如三氯乙烷或碳氟化合物的情况下进行蚀刻。该方法包括在半导体晶片上形成硅树脂或耐碱树脂的保护膜。然后，蚀刻未被保护膜覆盖的晶片的表面区域。最后，保护膜从半导体晶片剥离而不会损坏晶片或者使用对环境有害的溶剂。

30. 发明授权

US06156592A Method of manufacturing a semiconductor device containing CMOS elements 有权
标题翻译：制造含有CMOS元件的半导体器件的方法
公开(公告)号：US06156592A
公开(公告)日：2000-12-05
申请号：US141026
申请日：1998-08-27
申请人： Juri Kato , Kazuo Tanaka
发明人： Juri Kato , Kazuo Tanaka
IPC分类号： H01L21/28 , H01L21/3205 , H01L21/8238 , H01L23/52 , H01L27/04 , H01L27/092 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/78
CPC分类号： H01L21/823835 , H01L29/4933 , H01L29/4983 , H01L2924/0002
摘要： In a CMOS-element-containing semiconductor device, the CMOS element comprises: a silicon substrate; an n-channel MOS element formed on the silicon substrate and including an n-type source/drain region, a gate oxide film and a gate electrode; a p-channel MOS element formed on the silicon substrate and including a p-type source/drain region, a gate oxide film and a gate electrode; and a gate wiring layer electrically interconnecting the gate electrode of the n-channel MOS element and the gate electrode of the p-channel MOS element with one another. The gate electrodes and/or the gate wiring layer include at least in part a metal silicide layer. The gate electrodes and the gate wiring layer contain at arbitrary region impurities consisting of a III group dopant and/or a V group dopant in a concentration of at most 3.times.10.sup.20 atoms cm.sup.-3.
摘要翻译：在含CMOS元件的半导体器件中，CMOS元件包括：硅衬底; 形成在硅衬底上并包括n型源极/漏极区，栅极氧化膜和栅电极的n沟道MOS元件; 形成在硅衬底上并包括p型源极/漏极区，栅极氧化膜和栅电极的p沟道MOS元件; 以及将n沟道MOS元件的栅电极和p沟道MOS元件的栅电极彼此电连接的栅极布线层。栅电极和/或栅极布线层至少部分地包括金属硅化物层。栅极电极和栅极布线层在任意区域包含浓度在3×10 20原子cm -3以下的由III族掺杂剂和/或V族掺杂剂构成的杂质。

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