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21. 发明申请

US20100019312A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20100019312A1
公开(公告)日：2010-01-28
申请号：US12510577
申请日：2009-07-28
申请人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
发明人： Katsuyuki SEKINE , Akiko Sekihara , Kensuke Takano , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/28
CPC分类号： H01L29/792 , H01L27/11565 , H01L27/11578 , H01L27/11582 , H01L29/513 , H01L29/66833 , H01L29/7926
摘要： A semiconductor device includes a semiconductor region, a tunnel insulating film formed on a surface of the semiconductor region, a charge-storage insulating film formed on a surface of the tunnel insulating film and containing silicon and nitrogen, a block insulating film formed on a surface of the charge-storage insulating film, and a control gate electrode formed on a surface of the block insulating film, wherein the tunnel insulating film has a first insulating film formed on the surface of the semiconductor region and containing silicon and oxygen, a second insulating film formed on a surface of the first insulating film, and a third insulating film formed on a surface of the second insulating film and containing silicon and oxygen, and a charge trap state in the second insulating film has a lower density than that in the charge-storage insulating film.
摘要翻译：半导体器件包括半导体区域，形成在半导体区域的表面上的隧道绝缘膜，形成在隧道绝缘膜的表面上并含有硅和氮的电荷存储绝缘膜，形成在表面上的块状绝缘膜以及形成在所述块绝缘膜的表面上的控制栅电极，其中所述隧道绝缘膜具有形成在所述半导体区域的表面上并且包含硅和氧的第一绝缘膜，第二绝缘膜形成在第一绝缘膜的表面上的膜，以及形成在第二绝缘膜的表面上并且含有硅和氧的第三绝缘膜，并且第二绝缘膜中的电荷陷阱状态具有比电荷密度低的密度 - 绝缘膜。

22. 发明申请

US20090004833A1 METHOD OF MANUFACTURING SEMICONDUCTOR STORAGE DEVICE 有权
标题翻译：制造半导体存储器件的方法
公开(公告)号：US20090004833A1
公开(公告)日：2009-01-01
申请号：US12146802
申请日：2008-06-26
申请人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
发明人： Takashi Suzuki , Hirokazu Ishida , Ichiro Mizushima , Yoshio Ozawa , Fumiki Aiso , Katsuyuki Sekine , Takashi Nakao , Yoshihiko Saito
IPC分类号： H01L21/20
CPC分类号： H01L27/115 , H01L21/76264 , H01L21/84 , H01L27/11521 , H01L27/11524 , H01L27/1203 , H01L29/66825
摘要： A method of manufacturing a semiconductor storage device includes providing an opening portion in a plurality of positions in an insulating film formed on a silicon substrate, and thereafter forming an amorphous silicon film on the insulating film, in which the opening portions are formed, and in the opening portions. Then, trenches are formed to divide the amorphous silicon film, in the vicinity of a midpoint between adjacent opening portions, into a portion on one opening portion side and a portion on the other opening portion side. Next, the amorphous silicon film, in which the trenches are formed, is annealed and subjected to solid-phase crystallization to form a single crystal with the opening portions used as seeds, and thereby a silicon single-crystal layer is formed. Then, a memory cell array is formed on the silicon single-crystal layer.
摘要翻译：一种制造半导体存储装置的方法包括在形成在硅衬底上的绝缘膜中的多个位置提供开口部分，然后在其中形成开口部分的绝缘膜上形成非晶硅膜，并且在开口部。然后，形成沟槽，将相邻的开口部之间的中点附近的非晶硅膜分割成一个开口部侧的一部分和另一个开口部侧的一部分。接着，对其中形成沟槽的非晶硅膜进行退火并进行固相结晶以形成具有用作晶种的开口部分的单晶，从而形成硅单晶层。然后，在硅单晶层上形成存储单元阵列。

23. 发明申请

US20080149932A1 SEMICONDUCTOR DEVICE 失效
标题翻译：半导体器件
公开(公告)号：US20080149932A1
公开(公告)日：2008-06-26
申请号：US11946606
申请日：2007-11-28
申请人： Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka , Masayuki Tanaka , Kazuaki Nakajima , Yoshio Ozawa , Akihito Yamamoto
发明人： Katsuaki Natori , Katsuyuki Sekine , Daisuke Nishida , Ryota Fujitsuka , Masayuki Tanaka , Kazuaki Nakajima , Yoshio Ozawa , Akihito Yamamoto
IPC分类号： H01L27/115
CPC分类号： H01L27/11521 , H01L21/28273 , H01L27/115 , H01L29/513 , H01L29/7881
摘要： A semiconductor device includes a semiconductor substrate, and a memory cell array provided on the semiconductor substrate and including a plurality of memory cells arranged on the semiconductor substrate, each of the plurality of the memory cells including a first insulating film provided on the semiconductor substrate, a charge storage layer provided on the first insulating film, a second insulating film provided on the charge storage layer, and a control electrode containing metal or metal silicide provided on the charge storage layer via the second insulating film, wherein a corner of a lower part of the control electrode includes semiconductor and fails to contain the metal or the metal silicide in a channel width direction view of the memory cell.
摘要翻译：半导体器件包括半导体衬底和设置在半导体衬底上并且包括布置在半导体衬底上的多个存储单元的存储单元阵列，多个存储单元中的每一个包括设置在半导体衬底上的第一绝缘膜，设置在所述第一绝缘膜上的电荷存储层，设置在所述电荷存储层上的第二绝缘膜，以及经由所述第二绝缘膜设置在所述电荷存储层上的含有金属或金属硅化物的控制电极，的控制电极包括半导体，并且在存储单元的沟道宽度方向视图中不能容纳金属或金属硅化物。

24. 发明授权

US08829593B2 Semiconductor memory device having three-dimensionally arranged memory cells, and manufacturing method thereof 有权
标题翻译：具有三维布置的存储单元的半导体存储器件及其制造方法
公开(公告)号：US08829593B2
公开(公告)日：2014-09-09
申请号：US12726952
申请日：2010-03-18
申请人： Katsuyuki Sekine , Kensuke Takano , Masaaki Higuchi , Tetsuya Kai , Yoshio Ozawa
发明人： Katsuyuki Sekine , Kensuke Takano , Masaaki Higuchi , Tetsuya Kai , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/336 , H01L29/423 , H01L27/115 , H01L29/788
CPC分类号： H01L27/11578 , H01L27/11551 , H01L27/11556 , H01L27/11582 , H01L29/42332 , H01L29/7881 , H01L29/792 , H01L29/7926
摘要： A first select transistor is formed on a semiconductor substrate. Memory cell transistors are stacked on the first select transistor and connected in series. A second select transistor is formed on the memory cell transistors. The memory cell transistors include a tapered semiconductor pillar which increases in diameter from the first select transistor toward the second select transistor, a tunnel dielectric film formed on the side surface of the semiconductor pillar, a charge storage layer which is formed on the side surface of the tunnel dielectric film and which increases in charge trap density from the first select transistor side toward the second select transistor side, a block dielectric film formed on the side surface of the charge storage layer, and conductor films which are formed on the side surface of the block dielectric film and which serve as gate electrodes.
摘要翻译：第一选择晶体管形成在半导体衬底上。存储单元晶体管堆叠在第一选择晶体管上并串联连接。在存储单元晶体管上形成第二选择晶体管。存储单元晶体管包括从第一选择晶体管朝向第二选择晶体管的直径增加的锥形半导体柱，形成在半导体柱的侧表面上的隧道电介质膜，形成在半导体柱的侧表面上的电荷存储层隧道电介质膜，并且其从第一选择晶体管侧朝向第二选择晶体管侧的电荷陷阱密度增加，形成在电荷存储层的侧表面上的块状电介质膜和形成在电荷存储层的侧表面上的导体膜该块介质膜并用作栅电极。

25. 发明授权

US08530876B2 Semiconductor memory device and method of manufacturing the same 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US08530876B2
公开(公告)日：2013-09-10
申请号：US12885038
申请日：2010-09-17
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L21/00
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/146 , H01L45/1633 , H01L45/1675
摘要： According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film.
摘要翻译：根据一个实施例，半导体存储器件包括衬底，下电极，可变电阻膜和上电极。下电极位于基板上。可变电阻膜位于下电极上并存储数据。上电极位于可变电阻膜上。可变电阻膜包括第一膜和第二膜。第一膜位于上电极和下电极中的至少一个的一侧并且包含金属。第二膜位于第一膜和另一电极之间，并含有金属和氧。第二膜中氧与金属的组成比[O] / [Me]低于化学计量比，高于第一膜中的组成比[O] / [Me]。组成比[0] / [Me]在第一膜和第二膜之间变化。

26. 发明授权

US08373222B2 Nonvolatile semiconductor memory device with alternately stacked isolation dielectric films and electrode films 失效
标题翻译：具有交替堆叠的隔离介质膜和电极膜的非易失性半导体存储器件
公开(公告)号：US08373222B2
公开(公告)日：2013-02-12
申请号：US12543685
申请日：2009-08-19
申请人： Katsuyuki Sekine , Yoshio Ozawa
发明人： Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L29/792
CPC分类号： H01L27/11578 , H01L21/28282 , H01L27/11582 , H01L29/66833 , H01L29/792 , H01L29/7926
摘要： In a nonvolatile semiconductor memory device, a stacked body is provided on a silicon substrate by alternately stacking pluralities of isolation dielectric films and electrode films, a through-hole is formed in the stacked body to extend in the stacking direction, a memory film is formed by stacking a block layer, a charge layer and a tunnel layer in this order at an inner face of the through-hole, and thereby a silicon pillar is buried in the through-hole. At this time, the electrode film is protruded further than the isolation dielectric film toward the silicon pillar at the inner face of the through-hole, and an end face of the isolation dielectric film has a curved shape displacing toward the silicon pillar side as the electrode film is approached.
摘要翻译：在非易失性半导体存储器件中，通过交替堆叠多个隔离电介质膜和电极膜，在硅衬底上设置层叠体，在层叠体中形成贯通孔，在堆叠方向上延伸，形成记忆膜通过在通孔的内表面依次堆叠阻挡层，电荷层和隧道层，从而将硅柱埋入通孔中。此时，电极膜比通孔的内表面的隔离电介质膜向硅柱突出，并且隔离电介质膜的端面具有向硅柱侧移位的弯曲形状，接近电极膜。

27. 发明申请

US20110193050A1 SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME 失效
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US20110193050A1
公开(公告)日：2011-08-11
申请号：US12885038
申请日：2010-09-17
申请人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
发明人： Kensuke Takano , Katsuyuki Sekine , Yoshio Ozawa
IPC分类号： H01L45/00 , H01L21/62
CPC分类号： H01L45/1233 , H01L27/2409 , H01L27/2481 , H01L45/08 , H01L45/146 , H01L45/1633 , H01L45/1675
摘要： According to one embodiment, a semiconductor memory device comprises a substrate, a lower electrode, a variable resistance film, and an upper electrode. The lower electrode is on the substrate. The variable resistance film is on the lower electrode and stores data. The upper electrode is on the variable resistance film. The variable resistance film comprises a first film, and a second film. The first film is on a side of at least one of the upper electrode and the lower electrode and contains a metal. The second film is between the first film and the other electrode and contains the metal and oxygen. A composition ratio [O]/[Me] of oxygen to the metal in the second film is lower than a stoichiometric ratio and higher than the composition ratio [O]/[Me] in the first film. The composition ratio [0]/[Me] changes between the first film and the second film.
摘要翻译：根据一个实施例，半导体存储器件包括衬底，下电极，可变电阻膜和上电极。下电极位于基板上。可变电阻膜位于下电极上并存储数据。上电极位于可变电阻膜上。可变电阻膜包括第一膜和第二膜。第一膜位于上电极和下电极中的至少一个的一侧并且包含金属。第二膜位于第一膜和另一电极之间，并含有金属和氧。第二膜中氧与金属的组成比[O] / [Me]低于化学计量比，高于第一膜中的组成比[O] / [Me]。组成比[0] / [Me]在第一膜和第二膜之间变化。

28. 发明申请

US20110175157A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME 审中-公开
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110175157A1
公开(公告)日：2011-07-21
申请号：US13008469
申请日：2011-01-18
申请人： Katsuyuki SEKINE , Tetsuya Kai , Yoshio Ozawa
发明人： Katsuyuki SEKINE , Tetsuya Kai , Yoshio Ozawa
IPC分类号： H01L29/792 , H01L21/336
CPC分类号： H01L27/11578 , H01L27/11582 , H01L29/40117 , H01L29/66833 , H01L29/7926
摘要： According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer; first and second insulating layers; a functional layer; first and second gate electrodes. The first insulating layer opposes the semiconductor layer. The second insulating layer is provided between the semiconductor layer and the first insulating layer. The functional layer is provided between the first and second insulating layers. The second gate electrode is separated from the first gate electrode. The first insulating layer is disposed between the first gate electrode and the semiconductor layer and between the second gate electrode and the semiconductor layer. The charge storabilities in first and second regions of the functional layer are different from that of a third region of the functional layer. The first and second regions oppose the first and second gate electrodes, respectively. The third region is between the first and the second regions.
摘要翻译：根据一个实施例，非易失性半导体存储器件包括半导体层; 第一和第二绝缘层; 功能层; 第一和第二栅电极。第一绝缘层与半导体层相对。第二绝缘层设置在半导体层和第一绝缘层之间。功能层设置在第一和第二绝缘层之间。第二栅电极与第一栅电极分离。第一绝缘层设置在第一栅电极和半导体层之间以及第二栅电极和半导体层之间。功能层的第一和第二区域中的电荷存储能力与功能层的第三区域的电荷存储能力不同。第一和第二区域分别与第一和第二栅电极相对。第三区域在第一和第二区域之间。

29. 发明申请

US20110049612A1 NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF 有权
标题翻译：非易失性半导体存储器件及其制造方法
公开(公告)号：US20110049612A1
公开(公告)日：2011-03-03
申请号：US12855212
申请日：2010-08-12
申请人： Masaaki HIGUCHI , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
发明人： Masaaki HIGUCHI , Yoshio Ozawa , Katsuyuki Sekine , Ryota Fujitsuka
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L29/792 , H01L21/28282 , H01L29/4234 , H01L29/513 , H01L29/66833
摘要： According to one embodiment, a nonvolatile semiconductor memory device including a semiconductor layer with a main surface, a first insulating layer formed on the main surface of the semiconductor layer, a charge storage layer formed on the first insulating layer, a second insulating layer formed on the charge storage layer, and a control gate electrode formed on the second insulating layer. At least one inelastic scattering film that reduces energy of electrons by scattering is contained in at least one of the charge storage layer and second insulating layer.
摘要翻译：根据一个实施例，一种非易失性半导体存储器件，包括具有主表面的半导体层，形成在半导体层的主表面上的第一绝缘层，形成在第一绝缘层上的电荷存储层，形成在第一绝缘层上的第二绝缘层电荷存储层和形成在第二绝缘层上的控制栅电极。至少一个通过散射减少电子能量的非弹性散射膜被包含在电荷存储层和第二绝缘层中的至少一个中。

30. 发明授权

US07723772B2 Semiconductor memory device and method of manufacturing the same 有权
标题翻译：半导体存储器件及其制造方法
公开(公告)号：US07723772B2
公开(公告)日：2010-05-25
申请号：US11699502
申请日：2007-01-30
申请人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
发明人： Yoshio Ozawa , Isao Kamioka , Junichi Shiozawa , Akihito Yamamoto , Ryota Fujitsuka , Yoshihiro Ogawa , Katsuaki Natori , Katsuyuki Sekine , Masayuki Tanaka , Daisuke Nishida
IPC分类号： H01L29/76 , H01L29/94 , H01L31/062 , H01L31/113 , H01L31/119
CPC分类号： H01L27/115 , H01L27/11521
摘要： A semiconductor memory device manufacturing method includes forming a floating gate electrode above a semiconductor substrate, forming an interelectrode insulating film above the floating gate electrode, forming a first radical nitride film on a surface of the interelectrode insulating film by first radical nitriding, and forming a control gate electrode on the first radical nitride film.
摘要翻译：一种半导体存储器件制造方法，包括在半导体衬底上形成浮置栅电极，在浮置栅电极上形成电极间绝缘膜，通过第一自由基氮化在电极间绝缘膜的表面上形成第一自由基氮化物膜，第一自由基氮化物膜上的控制栅电极。

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