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21. 发明授权

US07193211B2 Thermal type infrared ray imaging device and fabrication method thereof 失效
标题翻译：热式红外线成像装置及其制造方法
公开(公告)号：US07193211B2
公开(公告)日：2007-03-20
申请号：US11352339
申请日：2006-02-13
申请人： Keitaro Shigenaka , Naoya Mashio
发明人： Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L25/00
CPC分类号： H01L27/14669 , H01L27/1463 , H01L27/14649 , H01L27/14683
摘要： A fabrication method of a thermal type infrared ray imaging device that includes forming a plurality of diodes in a single crystal silicon layer as first and second thermoelectric conversion parts constituting a thermoelectric conversion part; forming input and output wirings to be connected to a plurality of cells; forming a plurality of opening portions which expose the single crystal silicon substrate; forming a first photothermal conversion layer; and removing selectively a portion of the single crystal silicon substrate via the plurality of opening portions.
摘要翻译：一种热式红外线成像装置的制造方法，其包括在单晶硅层中形成多个二极管作为构成热电转换部的第一和第二热电转换部; 形成要连接到多个单元的输入和输出布线; 形成暴露单晶硅衬底的多个开口部; 形成第一光热转换层; 以及经由所述多个开口部分选择性地去除所述单晶硅衬底的一部分。

22. 发明授权

US06809320B2 Solid-state infrared imager 有权
标题翻译：固态红外成像仪
公开(公告)号：US06809320B2
公开(公告)日：2004-10-26
申请号：US10244403
申请日：2002-09-17
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： H01L2714
CPC分类号： H01L27/14649 , H04N5/33
摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.
摘要翻译：固体红外成像器包括红外感测像素的矩阵阵列，其形成为半导体衬底上的成像区域，并且每个都包含用于感测入射的红外辐射的pn结热电转换器元件，每个连接到相应行的像素，各自连接到相应列的像素的信号线，选择并驱动行选择行中的一个的行选择电路，以及读出从信号线输出到信号线的信号电流的信号读出电路对应于由行选择电路驱动的行选择线的像素。特别地，信号读出电路包括使信号线的电位稳定到恒定电平的信号线势势稳定器，以及将在信号线中流动的信号电流转换为信号电压的电流 - 电压转换器。

23. 发明授权

US06759657B2 Infrared sensor 失效
标题翻译：红外传感器
公开(公告)号：US06759657B2
公开(公告)日：2004-07-06
申请号：US10106787
申请日：2002-03-27
申请人： Yoshinori Iida , Keitaro Shigenaka
发明人： Yoshinori Iida , Keitaro Shigenaka
IPC分类号： H01L2714
CPC分类号： H04N5/33 , H01L27/14634 , H01L27/14649
摘要： A low noise, high sensitivity and wide dynamic range uncooled type infrared sensor can effectively reduce the influence of fluctuations of the gate of the amplifier transistor. The infrared sensor comprises an imaging region containing thermoelectric conversion pixels arranged two-dimensionally in the form of a matrix of a plurality of row and a plurality of columns on a semiconductor substrate to detect incident infrared rays, column selection lines, vertical signal lines, said column selection lines and said vertical signal lines being arranged the imaging region, amplifier transistors configured to be modulated by the respective signal voltages generated in the signal lines, storage capacities connected respectively to the drains of the amplifier transistors and configured to store signal charges from the transistors, a plurality of reset circuits for resetting the drain potentials of said amplifier transistors and read circuits for reading the respective signal charges stored in said storage capacities, coupling capacitors being arranged between the vertical signal lines and the gate of amplifier transistors, sampling transistors being connected between the drains and the gates of said amplifier transistors.
摘要翻译：低噪声，高灵敏度和宽动态范围的非冷却型红外传感器可以有效降低放大晶体管栅极波动的影响。所述红外线传感器包括成像区域，所述成像区域包含在半导体衬底上以多行和多列的矩阵形式二维布置的热电转换像素，以检测入射的红外线，列选择线，垂直信号线，所述列选择线，并且所述垂直信号线被布置成成像区域，放大器晶体管被配置为由在信号线中产生的各个信号电压进行调制，存储电容分别连接到放大器晶体管的漏极，并被配置为存储来自晶体管，用于复位所述放大器晶体管的漏极电位和读取电路的多个复位电路，用于读取存储在所述存储容量中的各个信号电荷，耦合电容器布置在垂直信号线和放大器晶体管的栅极之间，采样晶体管为连接在t之间他排水和放大晶体管的门。

24. 发明授权

US06573504B2 Infrared sensor and manufacturing method thereof 有权
标题翻译：红外线传感器及其制造方法
公开(公告)号：US06573504B2
公开(公告)日：2003-06-03
申请号：US09819596
申请日：2001-03-29
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J520
CPC分类号： H01L31/103 , G01J5/10 , H01L27/1463 , H01L27/14649 , H01L27/14683 , H01L31/024 , H01L31/035281 , Y02E10/50
摘要： An object of the present invention is to provide a high-sensitivity infrared sensor. According to the present invention, a support member for supporting a sensor portion in a cavity structure is formed to be remarkably thin as compared with a conventional structure, a sectional area of the support member is considerably reduced, heat conductance can remarkably be reduced and, as a result, the infrared sensor having a remarkably high sensitivity can be obtained. Moreover, according to the present invention, since an insulating layer of a support member area is etched, and a sacrifice silicon film is embedded in the area, an aspect ratio of an insulating layer RIE for forming a support leg is remarkably reduced. A manufacturing process is facilitated, a sectional area of the support leg is further reduced as a secondary effect, and the sensitivity of the infrared sensor can further be enhanced.
摘要翻译：本发明的目的是提供一种高灵敏度红外传感器。根据本发明，与传统结构相比，用于支撑腔结构中的传感器部分的支撑构件形成为非常薄，支撑构件的截面积显着减小，导热性可以显着降低，结果，可以获得具有非常高的灵敏度的红外线传感器。此外，根据本发明，由于蚀刻了支撑构件区域的绝缘层，并且在该区域中埋设牺牲硅膜，所以用于形成支撑腿的绝缘层RIE的纵横比显着降低。便于制造过程，作为副作用，支撑腿的截面积进一步减小，并且可以进一步提高红外线传感器的灵敏度。

25. 发明授权

US06504153B1 Semiconductor infrared detecting device 失效
标题翻译：半导体红外检测装置
公开(公告)号：US06504153B1
公开(公告)日：2003-01-07
申请号：US09624996
申请日：2000-07-25
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： H01L2714
CPC分类号： H01L27/14649 , H01L31/03529 , Y02E10/50
摘要： In a semiconductor infrared image pick-up system, thermo-sensing sections arrayed in a matrix format are supported by a supporting section above a base substrate in a floating state such that they are thermally independent of the base substrate and of each other. Each thermo-sensing section includes first and second semiconductor layers stacked on an insulating layer to form a pn junction. The second layer is in contact with the first layer via an irregular interface to enlarge the surface area of the pn junction. An infrared image is picked up with reference to a change in electric current flowing through the pn junctions, which is caused when the thermo-sensing sections are irradiated with infrared rays in a state where forward bias voltage is applied to the pn junctions.
摘要翻译：在半导体红外图像拾取系统中，以矩阵形式排列的热感测部分以浮动状态的基底基板上方的支撑部分支撑，使得它们与基底基板和彼此热独立。每个热敏感部分包括堆叠在绝缘层上以形成pn结的第一和第二半导体层。第二层通过不规则界面与第一层接触，以扩大pn结的表面积。参照流过pn结的电流的变化来拾取红外图像，当在pn结处施加正向偏置电压的状态下，当感温部分被红外线照射时引起。

26. 发明授权

US07172920B2 Method of manufacturing an image device 有权
标题翻译：制造图像装置的方法
公开(公告)号：US07172920B2
公开(公告)日：2007-02-06
申请号：US11168423
申请日：2005-06-29
申请人： Sumio Ikegawa , Kohei Nakayama , Hideyuki Funaki , Yoshinori Iida , Keitaro Shigenaka
发明人： Sumio Ikegawa , Kohei Nakayama , Hideyuki Funaki , Yoshinori Iida , Keitaro Shigenaka
IPC分类号： H01L21/00
CPC分类号： H04N5/33 , G01J5/20 , G01J5/22 , G01J5/24 , G01J2005/202 , H01L27/16
摘要： An imaging device comprises a select line, a first signal line crossing the select line, and a first pixel provided at a portion corresponding to a crossing portion of the select line and the first signal line, the first pixel comprising a first buffer layer formed on a substrate, a first bolometer film formed on the first buffer layer, made of a compound which undergoes metal-insulator transition, and generating a first temperature detection signal, a first switching element formed on the substrate, selected by a select signal from the select line, and supplying the first temperature detection signal to the first signal line, and a metal wiring connecting a top surface of the first bolometer film to the first switching element.
摘要翻译：成像装置包括选择线，与选择线交叉的第一信号线和设置在与选择线和第一信号线的交叉部分对应的部分处的第一像素，第一像素包括形成在第一信号线上的第一缓冲层基板，形成在第一缓冲层上的第一测辐射热计薄膜，由经历金属 - 绝缘体转变的化合物制成，并产生第一温度检测信号，形成在基板上的第一开关元件，通过来自选择的选择信号选择并且将第一温度检测信号提供给第一信号线，以及将第一测辐射热计薄膜的顶表面连接到第一开关元件的金属布线。

27. 发明授权

US07145142B2 Sensor device which detects a physical change amount or a chemical change amount 失效
标题翻译：检测物理变化量或化学变化量的传感器装置
公开(公告)号：US07145142B2
公开(公告)日：2006-12-05
申请号：US10306160
申请日：2002-11-29
申请人： Hideyuki Funaki , Keitaro Shigenaka , Yujiro Naruse , Ikuo Fujiwara , Naoya Mashio
发明人： Hideyuki Funaki , Keitaro Shigenaka , Yujiro Naruse , Ikuo Fujiwara , Naoya Mashio
IPC分类号： G01J5/24 , H01L27/14 , H01L31/105 , H03K3/42 , C12Q1/68
CPC分类号： G01J5/24 , C12Q1/68 , C12Q1/6837 , G01J5/023 , G01J5/20 , C12Q2565/607
摘要： A sensor device includes a sensor array in which infrared sensors are arrayed and a detection circuit connected to the output signal line of the sensor array. The detection circuit includes a capacitor having a charging circuit which is selectively driven, a sense amplifier circuit which detects and amplifies a change in sensor current flowing to the output signal line, a current-to-voltage conversion circuit which converts the output current from the sense amplifier circuit into a voltage, a discharging circuit which is controlled by the output voltage of the current-to-voltage conversion circuit to discharge the capacitor, and an output circuit which outputs the terminal voltage of the capacitor.
摘要翻译：传感器装置包括其中布置有红外传感器的传感器阵列和连接到传感器阵列的输出信号线的检测电路。检测电路包括具有选择性驱动的充电电路的电容器，检测并放大流向输出信号线的传感器电流的变化的读出放大器电路，将输出电流从感测放大器电路变为电压，放电电路由电流 - 电压转换电路的输出电压控制以对电容器进行放电;以及输出电路，其输出电容器的端子电压。

28. 发明授权

US07122798B2 Infrared image sensor 失效
标题翻译：红外图像传感器
公开(公告)号：US07122798B2
公开(公告)日：2006-10-17
申请号：US10753386
申请日：2004-01-09
申请人： Keitaro Shigenaka , Yoshinori Iida
发明人： Keitaro Shigenaka , Yoshinori Iida
IPC分类号： G01J5/00
CPC分类号： G01J5/24 , H04N5/33
摘要： An infrared image sensor comprises, a substrate having an image area on which infrared radiation is made incident and an non-image area out of the image area, plural first heat-sensitive parts arranged in rows and columns on the image area, plural second heat-sensitive parts provided in the non-image area so as to correspond to the respective rows of the first heat-sensitive parts in the image area with the same thermoelectric conversion function as that of the first heat-sensitive parts, a bias current supply circuit supplying a bias current to the first heat-sensitive parts and second heat-sensitive parts, an output circuit outputting an electric signal of the first heat-sensitive parts, and a bias current control circuit controlling the bias current to be fed to the first heat-sensitive parts, according to an electric signal of the second heat-sensitive parts.
摘要翻译：红外图像传感器包括具有入射红外线的图像区域和图像区域中的非图像区域的基板，在图像区域上排列成行和列的多个第一热敏部件，多个第二热量设置在所述非图像区域中的与所述图像区域中的所述第一热敏部件的各行对应的感光部件具有与所述第一热敏部件相同的热电转换功能，偏置电流供给电路向第一热敏部件和第二热敏部件提供偏置电流;输出电路，输出第一热敏部件的电信号;以及偏置电流控制电路，控制要馈送到第一热敏部件的第一热量敏感部件，根据第二热敏部件的电信号。

29. 发明授权

US07087900B2 Solid-state infrared imager 有权
公开(公告)号：US07087900B2
公开(公告)日：2006-08-08
申请号：US10957623
申请日：2004-10-05
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J5/20 , H01L27/14
CPC分类号： H01L27/14649 , H04N5/33
摘要： A solid-state infrared imager comprises a matrix array of infrared sensing pixels which are formed as an imaging area on a semiconductor substrate and each of which contains a pn-junction thermoelectric converter element to sense incident infrared radiation, row selection lines each connected to the pixels of a corresponding row, signal lines each connected to the pixels of a corresponding column, a row selection circuit which selects and drives one of the row selection lines, and a signal readout circuit which reads out signal currents output to the signal lines from the pixels corresponding to the row selection line driven by the row selection circuit. Particularly, the signal readout circuit includes a signal line potential stabilizer which stabilizes the potential of the signal line to a constant level, and a current-voltage converter which converts the signal current flowing in a signal line to a signal voltage.

30. 发明授权

US06974953B2 Infrared sensor device and manufacturing method thereof 失效
公开(公告)号：US06974953B2
公开(公告)日：2005-12-13
申请号：US10960988
申请日：2004-10-12
申请人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
发明人： Yoshinori Iida , Keitaro Shigenaka , Naoya Mashio
IPC分类号： G01J1/02 , G01J5/20 , G01J5/24 , H01L21/28 , H01L27/14 , H01L27/146 , H01L27/16 , H01L29/423 , H01L29/43 , H01L29/49 , H01L29/786 , H01L31/09 , H01L37/02
CPC分类号： G01J5/08 , G01J5/0853 , G01J5/20 , H01L27/14649 , H01L27/16
摘要： A supporting beam line for supporting, afloat in a cavity on a semiconductor substrate, an infrared detection pixel comprising an infrared absorption portion for absorbing an incident infrared ray and converting it into heat and a thermoelectric conversion portion for converting a temperature change caused by the heat generated in the infrared absorption portion into an electric signal is formed by a damascene metal on the same layer as the gate of a damascene metal gate MOS transistor to be used in a peripheral circuit. The supporting beam line comprises a conductor line with U-shaped cross section inside which a metal is filled.

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