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21. 发明申请

US20160027605A1 High Resolution High Quantum Efficiency Electron Bombarded CCD Or CMOS Imaging Sensor 有权
标题翻译：高分辨率高量子效率电子轰击CCD或CMOS成像传感器
公开(公告)号：US20160027605A1
公开(公告)日：2016-01-28
申请号：US14614088
申请日：2015-02-04
申请人： KLA-Tencor Corporation
发明人： Ximan Jiang , Stephen Biellak , John Fielden
IPC分类号： H01J31/26 , G01N21/88 , H01J29/46
CPC分类号： H01J31/26 , G01N21/88 , H01J29/46
摘要： An electron-bombarded detector for detecting low light signals includes a vacuum tube structure defining a cylindrical vacuum tube chamber, a photocathode disposed at a first end of the vacuum tube chamber, a sensor disposed at a second end of the vacuum tube chamber, ring electrodes disposed in the vacuum tube chamber for generating an electric field that accelerates emitted photoelectrons toward the sensor, and a magnetic field generator configured to generate a symmetric magnetic field that applies a focusing lens effect on the photoelectrons. The ring electrodes and magnetic field generator are operating using one of a reduced distance focusing approach and an acceleration/deceleration approach such that the photoelectrons have a landing energy below 2 keV. The use of reflective mode photocathodes is enabled using either multi-pole deflector coils, or ring electrodes formed by segmented circular electrode structures. Large angle deflections are achieved using magnetic or electrostatic deflectors.
摘要翻译：用于检测低光信号的电子轰击检测器包括限定圆柱形真空管室的真空管结构，设置在真空管室的第一端的光电阴极，设置在真空管室的第二端的传感器，环形电极设置在真空管室中，用于产生将发射的光电子朝向传感器加速的电场;以及磁场发生器，被配置为产生对光电子产生聚焦透镜效应的对称磁场。环形电极和磁场发生器使用减小的距离聚焦方法和加速/减速方法之一进行操作，使得光电子具有低于2keV的着陆能量。使用反射模式光电阴极可以使用多极偏转线圈或由分段圆形电极结构形成的环形电极。使用磁性或静电偏转器实现大角度偏转。

22. 发明申请

US20150260659A1 Image Sensor, An Inspection System And A Method Of Inspecting An Article 有权
标题翻译：图像传感器，检测系统及检测方法
公开(公告)号：US20150260659A1
公开(公告)日：2015-09-17
申请号：US14643148
申请日：2015-03-10
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Jingjing Zhang , John Fielden
IPC分类号： G01N21/95 , H01L27/146 , H01L31/18 , H01L31/107 , H01L31/028 , G01N21/88 , H01L27/148
CPC分类号： H01L27/14632 , G01N21/8806 , G01N21/9501 , G01N2201/061 , G01N2201/0638 , G01N2201/12 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/1462 , H01L27/1464 , H01L27/14643 , H01L27/14645 , H01L27/14647 , H01L27/14681 , H01L27/14685 , H01L27/14687 , H01L27/14689 , H01L27/14698 , H01L27/14825 , H01L27/14831 , H01L27/14856 , H01L31/028 , H01L31/107 , H01L31/1804
摘要： A high sensitivity image sensor comprises an epitaxial layer of silicon that is intrinsic or lightly p doped (such as a doping level less than about 1013 cm−3). CMOS or CCD circuits are fabricated on the front-side of the epitaxial layer. Epitaxial p and n type layers are grown on the backside of the epitaxial layer. A pure boron layer is deposited on the n-type epitaxial layer. Some boron is driven a few nm into the n-type epitaxial layer from the backside during the boron deposition process. An anti-reflection coating may be applied to the pure boron layer. During operation of the sensor a negative bias voltage of several tens to a few hundred volts is applied to the boron layer to accelerate photo-electrons away from the backside surface and create additional electrons by an avalanche effect. Grounded p-wells protect active circuits as needed from the reversed biased epitaxial layer.
摘要翻译：高灵敏度图像传感器包括硅的外延层，其是固有的或轻掺杂的（例如掺杂水平小于约1013cm-3）。 CMOS或CCD电路制造在外延层的前侧。外延p和n型层生长在外延层的背面。在n型外延层上沉积纯硼层。在硼沉积过程中，一些硼从背面被驱动到几nm的n型外延层中。可以将抗反射涂层施加到纯硼层。在传感器的操作期间，将数十至几百伏的负偏压施加到硼层，以加速光电子远离背面，并通过雪崩效应产生额外的电子。接地的p阱可以根据需要从反向偏置的外延层保护有源电路。

23. 发明申请

US20150078650A1 Block-to-Block Reticle Inspection 有权
标题翻译：块到块标线检查
公开(公告)号：US20150078650A1
公开(公告)日：2015-03-19
申请号：US14466688
申请日：2014-08-22
申请人： KLA-Tencor Corporation
发明人： Abdurrahman Sezginer , Patrick LoPresti , Joe Blecher , Rui-fang Shi , Yalin Xiong , John Fielden
IPC分类号： G01N21/88 , G06T7/00 , G01N21/958
CPC分类号： G01N21/8851 , G01N21/8806 , G01N21/958 , G01N2021/8887 , G01N2201/125 , G06T7/001 , G06T2207/20224 , G06T2207/30148
摘要： Block-to-block reticle inspection includes acquiring a swath image of a portion of a reticle with a reticle inspection sub-system, identifying a first occurrence of a block in the swatch image and at least a second occurrence of the block in the swath image substantially similar to the first occurrence of the block and determining at least one of a location, one or more geometrical characteristics of the block and a spatial offset between the first occurrence of the block and the at least a second occurrence of the block.
摘要翻译：块对块掩模版检查包括用掩模版检查子系统获取掩模版的一部分的条带图像，识别样本图像中的块的第一次出现以及条纹图像中的块的至少第二次出现基本上类似于块的第一次出现并且确定块的位置，一个或多个几何特征和块的第一次出现与块的至少第二次出现之间的空间偏移中的至少一个。

24. 发明申请

US20130282340A1 Process Aware Metrology 有权
标题翻译：过程感知计量
公开(公告)号：US20130282340A1
公开(公告)日：2013-10-24
申请号：US13919577
申请日：2013-06-17
申请人： KLA-Tencor Corporation
发明人： Xuefeng Liu , Yung-Ho Alex Chuang , John Fielden , Bin-Ming Benjamin Tsai , Jingjing Zhang
IPC分类号： G06F17/50
CPC分类号： G06F17/5018 , G03F7/70625 , G06F17/10 , G06F17/5081 , G06F19/00 , G06F2217/12 , G06F2217/14 , G06F2217/16 , H01L22/12 , H01L22/20
摘要： Systems and methods for process aware metrology are provided. One method includes selecting nominal values and one or more different values of process parameters for one or more process steps used to form the structure on the wafer, simulating one or more characteristics of the structure that would be formed on the wafer using the nominal values, and determining parameterization of the optical model based on how the one or more characteristics of the structure vary between at least two of the nominal values and the one or more different values.
摘要翻译：提供了流程感知度量的系统和方法。一种方法包括为用于在晶片上形成结构的一个或多个工艺步骤选择工艺参数的标称值和一个或多个不同值，模拟使用标称值在晶片上形成的结构的一个或多个特性，以及基于所述结构的一个或多个特性如何在所述标称值和所述一个或多个不同值中的至少两个之间变化来确定所述光学模型的参数化。

25. 发明申请

US20130264481A1 Back-Illuminated Sensor With Boron Layer 有权
标题翻译：背光照明传感器与硼层
公开(公告)号：US20130264481A1
公开(公告)日：2013-10-10
申请号：US13792166
申请日：2013-03-10
申请人： KLA-TENCOR CORPORATION
发明人： Jehn-Huar Chern , Ali R. Ehsani , Gildardo Delgado , David L. Brown , Yung-Ho Alex Chuang , John Fielden
IPC分类号： H01L31/0216 , G01N21/88
CPC分类号： H01L31/0216 , G01N21/8806 , G01N21/9501 , G01N21/956 , G01N2021/95676 , H01L27/1462 , H01L27/1464 , H01L27/14685 , H01L27/14689 , H01L27/14806
摘要： An image sensor for short-wavelength light and charged particles includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor. The image sensor can be included in an electron-bombarded image sensor and/or in an inspection system.
摘要翻译：用于短波长光和带电粒子的图像传感器包括半导体膜，形成在半导体膜的一个表面上的电路元件和在半导体膜的另一个表面上的纯硼层。该图像传感器具有高效率和良好的稳定性，即使在高通量下连续使用多年。图像传感器可以使用CCD（电荷耦合器件）或CMOS（互补金属氧化物半导体）技术来制造。图像传感器可以是二维区域传感器或一维阵列传感器。图像传感器可以包括在电子轰击的图像传感器和/或检查系统中。

26. 发明授权

US10764527B2 Dual-column-parallel CCD sensor and inspection systems using a sensor 有权
公开(公告)号：US10764527B2
公开(公告)日：2020-09-01
申请号：US16397072
申请日：2019-04-29
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Jingjing Zhang , Sharon Zamek , John Fielden , Devis Contarato , David L. Brown
IPC分类号： H01L27/148 , H04N5/378 , H04N5/361 , G01N21/956 , G01N21/95 , G06T7/00 , H04N5/372
摘要： A dual-column-parallel image CCD sensor utilizes a dual-column-parallel readout circuit including two pairs of cross-connected transfer gates to alternately transfer pixel data (charges) from a pair of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the two adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at twice the line clock rate to pass the image charges to the shared output circuit. A symmetrical Y-shaped diffusion is utilized in one embodiment to merge the image charges from the two pixel columns. A method of driving the dual-column-parallel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the dual-column-parallel CCD sensor is also described.

27. 发明授权

US10558123B2 Electron source 有权
公开(公告)号：US10558123B2
公开(公告)日：2020-02-11
申请号：US16161010
申请日：2018-10-15
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Yinying Xiao-Li , Xuefeng Liu , John Fielden
IPC分类号： H01J37/073 , G03F7/20 , H01J1/34 , H01J1/304 , H01J35/06
摘要： An electron source is formed on a silicon substrate having opposing first and second surfaces. At least one field emitter is prepared on the second surface of the silicon substrate to enhance the emission of electrons. To prevent oxidation of the silicon, a thin, contiguous boron layer is disposed directly on the output surface of the field emitter using a process that minimizes oxidation and defects. The field emitter can take various shapes such as pyramids and rounded whiskers. One or several optional gate layers may be placed at or slightly lower than the height of the field emitter tip in order to achieve fast and accurate control of the emission current and high emission currents. The field emitter can be p-type doped and configured to operate in a reverse bias mode or the field emitter can be n-type doped.

28. 发明申请

US20190386054A1 Back-Illuminated Sensor And A Method Of Manufacturing A Sensor 审中-公开
公开(公告)号：US20190386054A1
公开(公告)日：2019-12-19
申请号：US16421212
申请日：2019-05-23
申请人： KLA-Tencor Corporation , Hamamatsu Photonics K.K.
发明人： Yung-Ho Alex Chuang , Jingling Zhang , John Fielden , David L. Brown , Masaharu Muramatsu , Yasuhito Yoneta , Shinya Otsuka
IPC分类号： H01L27/146
摘要： An image sensor for electrons or short-wavelength light includes a semiconductor membrane, circuit elements formed on one surface of the semiconductor membrane, and a pure boron layer on the other surface of the semiconductor membrane. The circuit elements are connected by metal interconnects comprising a refractory metal. An anti-reflection or protective layer may be formed on top of the pure boron layer. This image sensor has high efficiency and good stability even under continuous use at high flux for multiple years. The image sensor may be fabricated using CCD (charge coupled device) or CMOS (complementary metal oxide semiconductor) technology. The image sensor may be a two-dimensional area sensor, or a one-dimensional array sensor.

29. 发明申请

US20190313044A1 Multiple Column Per Channel CCD Sensor Architecture For Inspection And Metrology 审中-公开
公开(公告)号：US20190313044A1
公开(公告)日：2019-10-10
申请号：US16439297
申请日：2019-06-12
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Jingjing Zhang , Sharon Zamek , John Fielden , Devis Contarato , David L. Brown
IPC分类号： H04N5/378 , G01N21/956 , H04N5/361 , H04N5/372 , G06T7/00 , H01L27/148 , G01N21/95
摘要： A multiple-column-per-channel image CCD sensor utilizes a multiple-column-per-channel readout circuit including connected transfer gates that alternately transfer pixel data (charges) from a group of adjacent pixel columns to a shared output circuit at high speed with low noise. Charges transferred along the adjacent pixel columns at a line clock rate are alternately passed by the transfer gates to a summing gate that is operated at multiple times the line clock rate to pass the image charges to the shared output circuit. A symmetrical fork-shaped diffusion is utilized in one embodiment to merge the image charges from the group of related pixel columns. A method of driving the multiple-column-per-channel CCD sensor with line clock synchronization is also described. A method of inspecting a sample using the multiple-column-per-channel CCD sensor is also described.

30. 发明授权

US10429719B2 183 nm CW laser and inspection system 有权
公开(公告)号：US10429719B2
公开(公告)日：2019-10-01
申请号：US16205032
申请日：2018-11-29
申请人： KLA-Tencor Corporation
发明人： Yung-Ho Alex Chuang , Xiaoxu Lu , Baigang Zhang , John Fielden , Vladimir Dribinski
IPC分类号： G02F1/35 , G02F1/355
摘要： An inspection system/method in which first optics direct continuous wave (CW) light at 181-185 nm to an inspected article, and second optics redirect image information affected by the article to detectors. A laser assembly generates the CW light by generating fourth harmonic light from first fundamental CW light having a first wavelength between 1 and 1.1 μm, generating fifth harmonic light by mixing the fourth harmonic light with the first fundamental CW light, and mixing the fifth harmonic light with second light having a second wavelength between 1.26 and 1.82 μm. An external cavity mixes the first light and the fourth harmonic light using a first nonlinear crystal. The CW light is generated using a second cavity that passes circulated second fundamental or signal CW light through a second nonlinear crystal, and directing the fifth harmonic light through the second nonlinear crystal.

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