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21. 发明申请

US20120090548A1 WAFER CARRIER TRACK 有权
标题翻译：拖车履带
公开(公告)号：US20120090548A1
公开(公告)日：2012-04-19
申请号：US13257269
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
IPC分类号： C23C16/458
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。在一个实施例中，提供了用于在气相沉积反应器系统内悬浮和横穿晶片载体的晶片载体轨道，其包括在其间形成有气体腔的轨道组件的上部和下部。引导路径沿着上部的上表面延伸并且在引导路径上并且彼此平行的两个侧表面之间延伸。沿着引导路径的多个气孔从上部的上表面延伸穿过上部并进入气体腔。在一些示例中，轨道组件的上部和下部可以独立地包含石英，并且在一些示例中可以将其熔合在一起。

22. 发明申请

US20100229793A1 SHOWERHEAD FOR VAPOR DEPOSITION 审中-公开
标题翻译：用于蒸气沉积的淋浴器
公开(公告)号：US20100229793A1
公开(公告)日：2010-09-16
申请号：US12725326
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a showerhead assembly is provided which includes a body having a centralized channel extending through upper and lower portions of the body and extending parallel to a central axis of the body. The showerhead assembly contains an optional diffusion plate having a first plurality of holes and disposed within the centralized channel, an upper tube plate having a second plurality of holes and disposed within the centralized channel below the diffusion plate, a lower tube plate having a third plurality of holes and disposed within the centralized channel below the upper tube plate, and a plurality of tubes extending from the upper tube plate to the lower tube plate. Each tube is coupled to and in fluid communication with individual holes of the upper and lower tube plates.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。在一个实施例中，提供了一种喷头组件，其包括具有延伸穿过主体的上部和下部并且平行于主体的中心轴线延伸的集中通道的主体。淋浴头组件包括具有第一多个孔并且设置在集中通道内的可选扩散板，具有第二多个孔并且设置在扩散板下方的集中通道内的上管板，具有第三多个的下管板并且设置在上管板下方的集中通道内，以及从上管板延伸到下管板的多个管。每个管连接到上管和下管板的各个孔中并与其流体连通。

23. 发明申请

US20100209082A1 HEATING LAMP SYSTEM 审中-公开
标题翻译：加热灯系统
公开(公告)号：US20100209082A1
公开(公告)日：2010-08-19
申请号：US12725314
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/00 , F27B5/14
CPC分类号： C30B25/10 , C23C16/01 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/4583 , C23C16/481 , C23C16/482 , C23C16/54 , C30B25/025 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784 , H05B3/0047
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a heating lamp assembly for a vapor deposition reactor system is provided which includes a lamp housing disposed on an upper surface of a support base and containing a first lamp holder and a second lamp holder and a plurality of lamps extending from the first lamp holder to the second lamp holder. The plurality of lamps may have split filament lamps and/or non-split filament lamps, and in some examples, split and non-split filament may be alternately disposed between the first and second lamp holders. A reflector may be disposed on the upper surface of the support base between the first and second lamp holders. The reflector may contain gold or a gold alloy.
摘要翻译：本发明的实施例一般涉及用于化学气相沉积（CVD）工艺的装置。在一个实施例中，提供了一种用于气相沉积反应器系统的加热灯组件，其包括设置在支撑基座的上表面上并包含第一灯座和第二灯座的灯壳，以及从第一灯架到第二个灯座。多个灯可以具有裂开的灯丝灯和/或非分裂灯丝灯，并且在一些示例中，分裂和非分裂灯丝可以交替地设置在第一和第二灯座之间。反射器可以设置在第一和第二灯座之间的支撑基座的上表面上。反射器可以包含金或金合金。

24. 发明授权

US08852696B2 Method for vapor deposition 有权
标题翻译：气相沉积方法
公开(公告)号：US08852696B2
公开(公告)日：2014-10-07
申请号：US12725296
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/00 , C30B25/12 , H01L21/677 , C30B29/40 , C23C16/54 , C30B29/42 , C30B25/02 , H01L21/67 , C23C16/48 , C23C16/455 , C23C16/458 , C23C16/44
CPC分类号： C23C16/4583 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/12 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784
摘要： Chemical vapor deposition (CVD) processes include, in one embodiment, a method for processing a wafer within a vapor deposition reactor comprising heating at least one wafer disposed on a wafer carrier by exposing a lower surface of the wafer carrier to radiation emitted from a lamp assembly and flowing a liquid through a passageway extending throughout the reactor to maintain the reactor lid assembly at a predetermined temperature, such as within a range from about 275° C. to about 325° C. The method further includes traversing the wafer carrier along a wafer carrier track through at least a chamber containing a showerhead assembly and an isolator assembly and another chamber containing a showerhead assembly and an exhaust assembly, and removing gases from the reactor through the exhaust assembly.
摘要翻译：在一个实施方案中，化学气相沉积（CVD）方法包括在气相沉积反应器内处理晶片的方法，包括通过将晶片载体的下表面暴露于从灯发出的辐射而加热设置在晶片载体上的至少一个晶片组装和流动通过延伸穿过整个反应器的通道的液体，以将反应器盖组件保持在预定温度，例如在约275℃至约325℃的范围内。该方法还包括沿着通过至少一个包含喷头组件和隔离器组件的腔室以及包含喷头组件和排气组件的另一腔室以及通过排气组件从反应器中除去气体的晶片载体轨道。

25. 发明授权

US08602707B2 Methods and apparatus for a chemical vapor deposition reactor 有权
标题翻译：化学气相沉积反应器的方法和装置
公开(公告)号：US08602707B2
公开(公告)日：2013-12-10
申请号：US12475169
申请日：2009-05-29
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus , Melissa Archer , Harry Atwater , Stewart Sonnenfeldt
IPC分类号： H01L21/677
CPC分类号： C30B25/08 , B65G2207/06 , C23C16/45519 , C23C16/4583 , C23C16/54 , C30B25/025 , C30B25/10 , C30B25/12 , C30B25/14 , C30B25/18 , C30B29/40 , C30B29/42 , H01L21/67109 , H01L21/67784
摘要： Embodiments of the invention generally relate to a levitating substrate carrier or support. In one embodiment, a substrate carrier for supporting and carrying at least one substrate or wafer is provided which includes a substrate carrier body containing an upper surface and a lower surface, and at least one indentation pocket disposed within the lower surface. In another embodiment, the substrate carrier includes at least open indentation area within the upper surface, and at least two indentation pockets disposed within the lower surface. Each indentation pocket may be rectangular and have four side walls extending substantially perpendicular to the lower surface. In another embodiment, a method for levitating substrates disposed on a substrate carrier is provided which includes exposing the lower surface of a substrate carrier to a gas stream, forming a gas cushion under the substrate carrier, levitating the substrate carrier within a processing chamber, and moving the substrate carrier along a path within the processing chamber.
摘要翻译：本发明的实施方案一般涉及悬浮底物载体或载体。在一个实施例中，提供了用于支撑和承载至少一个衬底或晶片的衬底载体，其包括包含上表面和下表面的衬底载体主体，以及设置在下表面内的至少一个压痕穴。在另一个实施例中，衬底载体在上表面内至少包括开放的凹陷区域，以及设置在下表面内的至少两个压痕穴。每个压痕袋可以是矩形的并且具有基本上垂直于下表面延伸的四个侧壁。在另一个实施例中，提供一种用于浮置设置在基板载体上的基板的方法，其包括使基板载体的下表面暴露于气流，在基板载体下形成气垫，使基板载体悬浮在处理室内，以及沿着处理室内的路径移动衬底载体。

26. 发明授权

US08111978B2 Rapid thermal processing chamber with shower head 有权
标题翻译：带淋浴头的快速热处理室
公开(公告)号：US08111978B2
公开(公告)日：2012-02-07
申请号：US12171994
申请日：2008-07-11
申请人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
发明人： Khurshed Sorabji , Joseph Michael Ranish , Wolfgang Aderhold , Aaron Muir Hunter , Alexander N. Lerner
IPC分类号： A21B2/00
CPC分类号： H01L21/67109 , C23C16/4404 , C23C16/45512 , C23C16/45565 , C23C16/4557 , C23C16/45572 , C23C16/4584 , C23C16/481 , F27B17/0025 , H01L21/67098 , H01L21/67115 , H01L21/67167 , H01L21/67207
摘要： Apparatus and methods for thermally processing a substrate are provided. A chamber containing a levitating support assembly configured to position the substrate at different distances from a plate during the heating and cooling of a substrate. In one embodiment a plurality of openings on the surface of the plate are configured to evenly distribute gas across a radial surface of the substrate. The distribution of gas may couple radiant energy not reflected back to the substrate during thermal processing with an absorptive region of the plate to begin the cooling of the substrate. The method and apparatus provided within allows for a controllable and effective means for thermally processing a substrate rapidly.
摘要翻译：提供了用于热处理基板的设备和方法。包含悬浮支撑组件的腔室，其构造成在衬底的加热和冷却期间将衬底定位在与板不同的距离处。在一个实施例中，板的表面上的多个开口构造成均匀地分布气体穿过衬底的径向表面。气体的分布可以在热处理期间将与反射回衬底的辐射能耦合到板的吸收区域以开始冷却衬底。所提供的方法和装置允许用于快速热处理基板的可控和有效的装置。

27. 发明授权

US07378618B1 Rapid conductive cooling using a secondary process plane 有权
标题翻译：使用二次加工平面进行快速导电冷却
公开(公告)号：US07378618B1
公开(公告)日：2008-05-27
申请号：US11611061
申请日：2006-12-14
申请人： Khurshed Sorabji , Alexander N. Lerner
发明人： Khurshed Sorabji , Alexander N. Lerner
IPC分类号： F27D11/00 , F24B19/00
CPC分类号： H01L21/67098 , C30B31/14 , H01L21/30 , H01L21/67109 , H01L21/67115 , H01L22/10 , H01L2924/0002 , H01L2924/00
摘要： A method and apparatus for thermally processing a substrate is described. The apparatus includes a substrate support configured to move linearly and/or rotationally by a magnetic drive. The substrate support is also configured to receive a radiant heat source to provide heating region in a portion of the chamber. An active cooling region comprising a cooling plate is disposed opposite the heating region. The substrate may move between the two regions to facilitate rapidly controlled heating and cooling of the substrate.
摘要翻译：描述了用于热处理衬底的方法和装置。该装置包括被配置为通过磁驱动线性地和/或旋转移动的基板支撑件。衬底支撑件还被配置为接收辐射热源以在腔室的一部分中提供加热区域。包括冷却板的主动冷却区域设置在加热区域的对面。衬底可以在两个区域之间移动，以便于快速控制衬底的加热和冷却。

28. 发明授权

US08985911B2 Wafer carrier track 有权
公开(公告)号：US08985911B2
公开(公告)日：2015-03-24
申请号：US13257269
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas G. Hegedus
IPC分类号： B65G53/00 , C23C16/455 , C23C16/44 , C23C16/458 , C23C16/54
CPC分类号： C23C16/45565 , C23C16/4411 , C23C16/4412 , C23C16/45519 , C23C16/4557 , C23C16/4583 , C23C16/54
摘要： Embodiments of the invention generally relate to apparatuses for chemical vapor deposition (CVD) processes. In one embodiment, a wafer carrier track for levitating and traversing a wafer carrier within a vapor deposition reactor system is provided which includes upper and lower sections of a track assembly having a gas cavity formed therebetween. A guide path extends along an upper surface of the upper section and between two side surfaces which extend along and above the guide path and parallel to each other. A plurality of gas holes along the guide path extends from the upper surface of the upper section, through the upper section, and into the gas cavity. In some examples, the upper and lower sections of the track assembly may independently contain quartz, and in some examples, may be fused together.

29. 发明授权

US08859042B2 Methods for heating with lamps 有权
标题翻译：用灯加热的方法
公开(公告)号：US08859042B2
公开(公告)日：2014-10-14
申请号：US12725318
申请日：2010-03-16
申请人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
发明人： Gang He , Gregg Higashi , Khurshed Sorabji , Roger Hamamjy , Andreas Hegedus
IPC分类号： C23C16/00 , H01L21/677 , H01L21/67 , C30B29/42 , C30B25/10 , C23C16/48 , C30B29/40 , C23C16/455 , C23C16/44 , C23C16/54 , C30B25/02 , C23C16/458
CPC分类号： C23C16/4583 , C23C16/4412 , C23C16/45519 , C23C16/45565 , C23C16/481 , C23C16/54 , C30B25/025 , C30B25/10 , C30B29/40 , C30B29/42 , H01L21/67115 , H01L21/67784
摘要： Embodiments of the invention generally relate to methods for chemical vapor deposition (CVD) processes. In one embodiment, a method for heating a substrate or a substrate susceptor within a vapor deposition reactor system includes exposing a lower surface of a substrate susceptor, such as a wafer carrier, to energy emitted from a heating lamp assembly, and heating the substrate susceptor to a predetermined temperature. The heating lamp assembly generally contains a lamp housing disposed on an upper surface of a support base and contains at least one lamp holder, a plurality of lamps extending from the lamp holder, and a reflector disposed on the upper surface of the support base, next to the lamp holder, and below the lamps. The plurality of lamps may have split filament lamps and/or non-split filament lamps for heating inner and outer portions of the substrate susceptor.
摘要翻译：本发明的实施方案一般涉及用于化学气相沉积（CVD）方法的方法。在一个实施例中，一种用于加热气相沉积反应器系统内的衬底或衬底基座的方法包括将诸如晶片载体的衬底基座的下表面暴露于从加热灯组件发射的能量，以及加热衬底基座达到预定温度。加热灯组件通常包括设置在支撑基座的上表面上的灯壳，并且包含至少一个灯座，从灯座延伸的多个灯和设置在支撑座的上表面上的反射器到灯座和灯下方。多个灯可以具有用于加热衬底基座的内部和外部的分离的灯丝灯和/或非分裂灯丝灯。

30. 发明申请

US20130047922A1 THERMAL BRIDGE FOR CHEMICAL VAPOR DEPOSITION REACTORS 有权
标题翻译：化学气相沉积反应器的热桥
公开(公告)号：US20130047922A1
公开(公告)日：2013-02-28
申请号：US13222984
申请日：2011-08-31
申请人： Gregg Higashi , Khurshed Sorabji , Andreas Hegedus
发明人： Gregg Higashi , Khurshed Sorabji , Andreas Hegedus
IPC分类号： C23C16/46 , F27D11/12 , C23C16/458
CPC分类号： C23C16/458 , C23C16/483 , C23C16/54 , F27B17/0025 , F27D11/06 , F27D11/12 , H01L21/67115 , H01L21/67173 , H01L21/67706 , H01L21/6776
摘要： A thermal bridge connecting first and second processing zones and a method for transferring a work piece from a first to a second processing zone by way of the thermal bridge are disclosed. A work piece, transportable from the first to the second processing zone on or above the thermal bridge, is maintained at a temperature between the temperatures of the processing zones. The thermal bridge member features a thermally conductive transport member for the work piece supported over an infrared transmissive member that is insulative to heat conduction and convection. The bridge insulative member extends between the first and second processing zones or between reactors. An infrared radiation beam source emits infrared radiation which passes through the bridge insulative member to the transport member, heating the member. In an alternate embodiment, the transport member may be heated directly. A liner member may be mounted above the bridge member to retain heat.
摘要翻译：公开了一种连接第一和第二处理区域的热桥和通过热桥将工件从第一处理区传送到第二处理区的方法。从热桥上或上方的第一处理区域运送到第二处理区域的工件保持在处理区域的温度之间的温度。热桥构件具有用于工件的导热传输构件，其被支撑在绝热的热传导和对流的红外透射构件上。桥绝缘构件在第一和第二处理区之间或反应器之间延伸。红外辐射束源发射红外辐射，其通过桥绝缘构件传送到传送构件，加热构件。在替代实施例中，输送构件可以被直接加热。衬套构件可以安装在桥构件上方以保持热量。

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