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21. 发明授权

US07993498B2 Apparatus and method of electrolytic removal of metals from a wafer surface 有权
标题翻译：从晶片表面电解去除金属的装置和方法
公开(公告)号：US07993498B2
公开(公告)日：2011-08-09
申请号：US11834971
申请日：2007-08-07
申请人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
发明人： Hariklia Deligianni , Laertis Economikos , Catherine Ivers , Xiaoyan Shao
IPC分类号： C25D17/00
CPC分类号： B23H5/08
摘要： An apparatus and method designed to remove metals from a wafer surface using an electrolytic removal process. The apparatus includes a conductive pad having a plurality of alternating cathodes and anodes provided with a power source. The conductive pad is structured and configured to contact all metal islands on a surface of the wafer. Gaps are provided between pairs of the plurality of alternating cathodes and anodes.
摘要翻译：一种设计用于使用电解去除工艺从晶片表面去除金属的设备和方法。该装置包括具有多个具有电源的交替阴极和阳极的导电焊盘。导电焊盘被构造和配置成接触晶片表面上的所有金属岛。在多个交替阴极和阳极的成对之间提供间隙。

22. 发明申请

US20100304519A1 METHOD OF FABRICATING SOLAR CELL CHIPS 审中-公开
标题翻译：制造太阳能电池的方法
公开(公告)号：US20100304519A1
公开(公告)日：2010-12-02
申请号：US12849448
申请日：2010-08-03
申请人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
发明人： Hans-Juergen Eickelmann , Michael Haag , Harold J. Hovel , Rainer Klaus Krause , Markus Schmidt , Xiaoyan Shao , Steven Erik Steen
IPC分类号： H01L31/18 , H01L21/027 , H01L21/283
CPC分类号： H01L31/068 , H01L31/02168 , H01L31/022425 , H01L31/022433 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A method of fabricating solar cell chips. The method includes creating an integrated circuit chip process route for fabricating integrated circuit chips using integrated circuit wafers in an integrated circuit fabrication facility; creating a solar cell process route for fabricating solar cells using solar cell wafers in the integrated circuit fabrication facility; releasing integrated circuit chip wafers and solar cell wafers into tool queues of tools of the an integrated circuit fabrication facility; and processing the solar cell wafers on at least some tools of the integrated circuit fabrication facility used to process the integrated circuit wafers. Also the process used to fabricate the solar cell chips.
摘要翻译：制造太阳能电池芯片的方法。该方法包括在集成电路制造设备中创建用于使用集成电路晶片制造集成电路芯片的集成电路芯片工艺路线; 在集成电路制造设备中创建使用太阳能电池晶片制造太阳能电池的太阳能电池工艺路线; 将集成电路芯片晶片和太阳能电池晶片释放到集成电路制造设备的工具的工具队列中; 以及在用于处理集成电路晶片的集成电路制造设备的至少一些工具上处理太阳能电池晶片。也是制造太阳能电池芯片的过程。

23. 发明申请

US20090071836A1 METHOD OF ELECTRODEPOSITING GERMANIUM COMPOUND MATERIALS ON A SUBSTRATE 有权
标题翻译：在基材上电沉积锗化合物的方法
公开(公告)号：US20090071836A1
公开(公告)日：2009-03-19
申请号：US11856335
申请日：2007-09-17
申请人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
发明人： Qiang Huang , Andrew J. Kellock , Xiaoyan Shao , Venkatram Venkatasamy
IPC分类号： C25D7/12 , C25D5/02
CPC分类号： C25D7/12 , C25D3/54 , C25D5/022 , C25D5/18 , C25D17/001 , H01L45/06 , H01L45/1233 , H01L45/144 , H01L45/1608 , H01L45/1683
摘要： A method of electrodepositing germanium compound materials on an exposed region of a substrate structure, which includes forming a plating solution by dissolving at least one germanium salt and at least one salt containing an element other than germanium in water; obtaining a substrate with a clean surface; immersing the substrate in the solution; and electroplating germanium compound materials on the substrate by applying an electrical potential between the substrate and an anode in the plating solution, in which the substrate is included in a semiconductor or phase change device.
摘要翻译：一种将锗化合物材料电沉积在基材结构的暴露区域上的方法，其包括通过将至少一种锗盐和至少一种含锗以外的元素的盐溶解在水中形成电镀溶液; 获得具有干净表面的基材; 将基材浸入溶液中; 以及通过在所述基板和所述基板被包括在半导体或相变装置中的所述电镀液中的所述基板和阳极之间施加电位而在所述基板上电镀锗化合物材料。

24. 发明授权

US08865502B2 Solar cells with plated back side surface field and back side electrical contact and method of fabricating same 有权
标题翻译：具有电镀背面表面场和背面电接触的太阳能电池及其制造方法
公开(公告)号：US08865502B2
公开(公告)日：2014-10-21
申请号：US12813087
申请日：2010-06-10
申请人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
发明人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
IPC分类号： H01L31/0236 , H01L31/068 , H01L31/0224 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.
摘要翻译：本公开提供了一种在不使用丝网印刷的情况下形成太阳能电池的背面表面场的方法。该方法包括首先使用电沉积方法在包括p / n结的半导体衬底的背侧表面上直接形成p型掺杂剂层。 p / n结被定义为在衬底的n型半导体部分和衬底的下面的p型半导体部分之间形成的界面。然后将电镀结构从直接在半导体衬底的背面表面上的P ++背面表面场层退火。任选地，金属膜可以电沉积在P ++背面表面层的暴露表面上。

25. 发明申请

US20120325312A1 SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME 审中-公开
标题翻译：具有背面侧表面和背面电气接触件的太阳能电池及其制造方法
公开(公告)号：US20120325312A1
公开(公告)日：2012-12-27
申请号：US13605768
申请日：2012-09-06
申请人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
发明人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
IPC分类号： H01L31/0224 , H01L31/0264 , H01L31/0236
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.
摘要翻译：本公开提供了一种在不使用丝网印刷的情况下形成太阳能电池的背面表面场的方法。该方法包括首先使用电沉积方法在包括p / n结的半导体衬底的背侧表面上直接形成p型掺杂剂层。 p / n结被定义为在衬底的n型半导体部分和衬底的下面的p型半导体部分之间形成的界面。然后将电镀结构从直接在半导体衬底的背面表面上的P ++背面表面场层退火。任选地，金属膜可以电沉积在P ++背面表面层的暴露表面上。

26. 发明申请

US20120292771A1 FABRICATING A CONTACT RHODIUM STRUCTURE BY ELECTROPLATING AND ELECTROPLATING COMPOSITION 有权
标题翻译：通过电镀和电镀组合物制作接触式电极结构
公开(公告)号：US20120292771A1
公开(公告)日：2012-11-22
申请号：US13564414
申请日：2012-08-01
申请人： Hariklia Deligianni , Xiaoyan Shao
发明人： Hariklia Deligianni , Xiaoyan Shao
IPC分类号： H01L23/48
CPC分类号： H01L23/53242 , C25D3/50 , C25D5/50 , H01L21/2885 , H01L21/76877 , H01L2924/0002 , H01L2924/3011 , Y10T428/12007 , H01L2924/00
摘要： A contact rhodium structure is fabricated by a process that comprises obtaining a substrate having a dielectric layer thereon, wherein the dielectric layer has cavities therein into which the contact rhodium is to be deposited; depositing a seed layer in the cavities and on the dielectric layer; and depositing the rhodium by electroplating from a bath comprising a rhodium salt; an acid and a stress reducer; and then optionally annealing the structure.
摘要翻译：通过包括获得其上具有电介质层的衬底的方法制造接触铑结构，其中介电层具有其中将沉积接触铑的空腔; 将种子层沉积在空腔中和介电层上; 并通过电镀从含铑盐的浴中沉积铑; 酸和减压剂; 然后可选地退火该结构。

27. 发明申请

US20110303274A1 SOLAR CELLS WITH PLATED BACK SIDE SURFACE FIELD AND BACK SIDE ELECTRICAL CONTACT AND METHOD OF FABRICATING SAME 有权
标题翻译：具有背面侧表面和背面电气接触件的太阳能电池及其制造方法
公开(公告)号：US20110303274A1
公开(公告)日：2011-12-15
申请号：US12813087
申请日：2010-06-10
申请人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
发明人： Kathryn C. Fisher , Nicholas C. M. Fuller , Satyavolu S. Papa Rao , Xiaoyan Shao , Jeffrey Hedrick
IPC分类号： H01L31/0236 , H01L31/18
CPC分类号： H01L31/1804 , H01L31/022425 , H01L31/068 , Y02E10/547 , Y02P70/521
摘要： The present disclosure provides a method of forming a back side surface field of a solar cell without utilizing screen printing. The method includes first forming a p-type dopant layer directly on the back side surface of the semiconductor substrate that includes a p/n junction utilizing an electrodeposition method. The p/n junction is defined as the interface that is formed between an n-type semiconductor portion of the substrate and an underlying p-type semiconductor portion of the substrate. The plated structure is then annealed to from a P++ back side surface field layer directly on the back side surface of the semiconductor substrate. Optionally, a metallic film can be electrodeposited on an exposed surface of the P++ back side surface layer.
摘要翻译：本公开提供了一种在不使用丝网印刷的情况下形成太阳能电池的背面表面场的方法。该方法包括首先使用电沉积方法在包括p / n结的半导体衬底的背侧表面上直接形成p型掺杂剂层。 p / n结被定义为在衬底的n型半导体部分和衬底的下面的p型半导体部分之间形成的界面。然后将电镀结构从直接在半导体衬底的背面表面上的P ++背面表面场层退火。任选地，金属膜可以电沉积在P ++背面表面层的暴露表面上。

28. 发明授权

US08030130B2 Phase change memory device with plated phase change material 有权
标题翻译：相变存储器件，具有电镀相变材料
公开(公告)号：US08030130B2
公开(公告)日：2011-10-04
申请号：US12541595
申请日：2009-08-14
申请人： Matthew J. Breitwisch , Eric A. Joseph , Alejandro G. Schrott , Xiaoyan Shao
发明人： Matthew J. Breitwisch , Eric A. Joseph , Alejandro G. Schrott , Xiaoyan Shao
IPC分类号： H01L21/06
CPC分类号： H01L27/2436 , H01L45/06 , H01L45/1233 , H01L45/141 , H01L45/143 , H01L45/144 , H01L45/148 , H01L45/1608 , H01L45/1683 , H01L45/1691
摘要： A method for fabricating a phase change memory device including memory cells includes patterning a via to a contact surface of a substrate corresponding to each of an array of conductive contacts to be connected to access circuitry, lining each via with a conformal conductive seed layer to the contact surface, forming a dielectric layer covering the conductive seed layer, and etching a center region of each via to the contact surface to expose the conformal conductive seed layer at the contact surface. The method further includes electroplating phase change material on exposed portions of the conformal conductive seed layer, recessing the phase change material within the center region forming a conductive material that remains conductive upon oxidation, on the recessed phase change material, oxidizing edges of the conformal conductive seed layer formed along sides of each via, and forming a top electrode over each memory cell.
摘要翻译：一种用于制造包括存储单元的相变存储器件的方法包括将通孔图案化成与要连接到存取电路的导电触头阵列相对应的衬底的接触表面，将每个通孔用保形导电晶种层形成覆盖导电种子层的电介质层，并将每个通孔的中心区域蚀刻到接触表面，以在接触表面露出共形导电种子层。该方法还包括在保形导电晶种层的暴露部分上电镀相变材料，使形成导电材料的中心区域内的相变材料凹陷在凹陷相变材料上，该导电材料在凹陷相变材料上保持导电，保形导电晶种层沿每个通孔的侧面形成，并且在每个存储单元上形成顶部电极。

29. 发明申请

US20100213073A1 BATH FOR ELECTROPLATING A I-III-VI COMPOUND, USE THEREOF AND STRUCTURES CONTAINING SAME 审中-公开
标题翻译：用于电镀I-III-VI化合物的浴，其使用和包含其的结构
公开(公告)号：US20100213073A1
公开(公告)日：2010-08-26
申请号：US12390877
申请日：2009-02-23
申请人： Qiang HUANG , Xiaoyan Shao , Andrew J. Kellock
发明人： Qiang HUANG , Xiaoyan Shao , Andrew J. Kellock
IPC分类号： C25D9/04
CPC分类号： C25D3/56 , C25D9/08
摘要： A bath for electroplating a I-III-VI compound comprising: water; a copper containing precursor dissolved in said water; a selenium containing precursor dissolved in said water; and at least one member selected from the group consisting of an indium containing precursor dissolved in said water, a gallium containing precursor dissolved in said water and mixtures thereof, and at least one member selected from the group consisting of sulfur-containing organic compound dissolved in said water wherein one or more sulfur atoms directly bond with at least one carbon atom, a phosphorus-containing organic compound dissolved in said water wherein one or more phosphorus atoms directly bond with at least one carbon atom and mixtures thereof is provided along with its use to fabricate thin films, solar devices and tuned thin films.
摘要翻译：一种用于电镀I-III-VI化合物的浴，包括：水; 溶解在所述水中的含铜前体; 含有硒的前体溶于所述水中; 和选自溶解在所述水中的含铟前体中的至少一种，溶解在所述水中的含镓前体及其混合物，以及选自溶解于所述水中的含硫有机化合物中的至少一种所述水，其中一个或多个硫原子与至少一个碳原子直接键合，溶解在所述水中的含磷有机化合物，其中一个或多个磷原子与至少一个碳原子直接键合及其混合物，以及其用途制造薄膜，太阳能设备和调谐薄膜。

30. 发明申请

US20090283865A1 ELECTROCHEMICAL METHOD TO MAKE HIGH QUALITY DOPED CRYSTALLINE COMPOUND SEMICONDUCTORS 审中-公开
标题翻译：制造高品质DOPED晶体化合物半导体的电化学方法
公开(公告)号：US20090283865A1
公开(公告)日：2009-11-19
申请号：US12122257
申请日：2008-05-16
申请人： Xiaoyan Shao , Ronald Goldblatt , Ghavam G. Shahidi
发明人： Xiaoyan Shao , Ronald Goldblatt , Ghavam G. Shahidi
IPC分类号： H01L29/00 , H01L21/20
CPC分类号： H01L21/02628 , C25D3/54 , C25D5/50 , C25D7/12 , C25D9/04 , C30B7/12 , C30B29/06 , C30B29/08 , C30B29/40 , C30B29/48 , C30B33/02 , H01L21/02425 , H01L21/02521 , H01L21/02532 , H01L21/02546 , H01L21/02573
摘要： A process for fabricating doped crystalline semiconductors is provided using layer by layer deposition of semiconductors and the corresponding dopants.
摘要翻译：使用半导体和相应掺杂剂的逐层沉积来提供制造掺杂的晶体半导体的工艺。

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