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21. 发明申请

US20070135465A1 Fab I Inhibitor and Process for Preparing Same 有权
标题翻译： Fab I抑制剂及其制备方法
公开(公告)号：US20070135465A1
公开(公告)日：2007-06-14
申请号：US11548349
申请日：2006-10-11
申请人： Cheol Kim , Doug Shin , Seonggu Ro , Joong Cho , Young Hyun
发明人： Cheol Kim , Doug Shin , Seonggu Ro , Joong Cho , Young Hyun
IPC分类号： A61K31/513 , A61K31/4412 , C07D213/69 , C07D239/46
CPC分类号： C07D213/64 , C07D213/69 , C07D213/70 , C07D213/74 , C07D237/16 , C07D239/47 , C07D239/52 , C07D401/06 , C07D401/12 , C07D405/06 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/06 , C07D413/12 , C07D413/14 , C07D417/06 , C07D417/14
摘要： A compound which is effective for inhibiting Fab I, and a method for treating a bacterial infection.
摘要翻译：对抑制Fab I有效的化合物和细菌感染的治疗方法。

22. 发明申请

US20070016073A1 Apparatus and method for processing an ultrasound spectrum image 有权
标题翻译：用于处理超声波光谱图像的装置和方法
公开(公告)号：US20070016073A1
公开(公告)日：2007-01-18
申请号：US11413157
申请日：2006-04-28
申请人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
发明人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
IPC分类号： A61B6/00
CPC分类号： G01S7/52077 , A61B8/06 , G01S7/52026 , G01S15/584 , G01S15/8979 , G06K9/0055
摘要： There is provided a method of processing an ultrasound spectrum image. According to such method, a spectrum image is formed based on ultrasound data and then the noise is removed from the spectrum image. The noise-removed spectrum image is matched with one or more spectrum models representing specific spectrum types. Then, whether or not the noise-removed spectrum image contains an aliasing is checked. If the noise-removed spectrum image contains the aliasing, then the aliasing is removed from the noise-removed spectrum image to provide a noise-removed spectrum image without the aliasing. Thereafter, contour tracing is performed on the noise-removed spectrum image without the aliasing to detect contour points. Further, peak tracing is performed on the noise-removed spectrum image without the aliasing to detect peaks.
摘要翻译：提供了一种处理超声波频谱图像的方法。根据这种方法，基于超声数据形成频谱图像，然后从频谱图像中去除噪声。噪声消除的光谱图像与表示特定光谱类型的一个或多个光谱模型相匹配。然后，检查噪声去除的频谱图像是否包含混叠。如果噪声去除的频谱图像包含混叠，则从去除噪声的频谱图像中去除混叠，以提供没有混叠的噪声去除的频谱图像。此后，对噪声去除的频谱图像执行轮廓跟踪，而不需要混叠来检测轮廓点。此外，在没有混叠的噪声去除的频谱图像上执行峰值跟踪以检测峰值。

23. 发明申请

US20060278299A1 Method of charging low temperature liquified gas 审中-公开
标题翻译：低温液化气的充电方法
公开(公告)号：US20060278299A1
公开(公告)日：2006-12-14
申请号：US11404595
申请日：2006-04-17
申请人： Hyang Jang , Yuichi Iikubo , Dae Kim , Cheol Kim
发明人： Hyang Jang , Yuichi Iikubo , Dae Kim , Cheol Kim
IPC分类号： F17C13/00 , B65B1/04
CPC分类号： F04B43/06 , F04B15/08 , F04B43/067 , F17C2205/0355 , F17C2227/0142 , Y02E60/321
摘要： Disclosed is a method of charging a low temperature liquefied gas in a high pressure charging cylinder using a diaphragm pump. The method is advantageous in that it is possible to charge a low temperature liquefied gas which is to be made highly pure in a high pressure gas cylinder using a simple process in which the liquefied gas does not deteriorate and small energy is consumed.
摘要翻译：公开了使用隔膜泵对高压充气筒中的低温液化气进行充电的方法。该方法的优点在于，可以使用液化气体不劣化并且消耗小能量的简单方法对在高压气瓶中制成高纯度的低温液化气进行充电。

24. 发明申请

US20060184021A1 Method of improving the quality of a three-dimensional ultrasound doppler image 审中-公开
标题翻译：提高三维超声多普勒图像质量的方法
公开(公告)号：US20060184021A1
公开(公告)日：2006-08-17
申请号：US11330260
申请日：2006-01-12
申请人： Cheol Kim , Jong Ra , Young Song , Jung Lim , Eun Yang , Donghoon Yu , Jae Lee
发明人： Cheol Kim , Jong Ra , Young Song , Jung Lim , Eun Yang , Donghoon Yu , Jae Lee
IPC分类号： A61B8/00
CPC分类号： G06K9/40 , G06K2209/05 , G06T5/002 , G06T5/20 , G06T2207/10024 , G06T2207/10136 , G06T2207/30101
摘要： The present invention relates to a method of improving a 3D ultrasound color Doppler image through a post-processing. A method of processing an ultrasound image, includes the following steps: a) recognizing a target object from an inputted ultrasound image based on an object recognition algorithm using connectivity of the target object; b) setting at least one object region by using the connectivity of the recognized target object; c) calculating a structure matrix by using voxel gradients of the object region; d) calculating a diffusion matrix from the structure matrix; and e) acquiring a processed ultrasound image by applying the diffusion matrix and the voxel gradients to the inputted ultrasound image.
摘要翻译：本发明涉及通过后处理改善3D超声彩色多普勒图像的方法。一种处理超声图像的方法包括以下步骤：a）基于使用目标对象的连接性的对象识别算法从输入的超声图像中识别目标对象; b）通过使用所识别的目标对象的连接来设置至少一个对象区域; c）通过使用对象区域的体素梯度来计算结构矩阵; d）从结构矩阵计算扩散矩阵; 以及e）通过将扩散矩阵和体素梯度应用于输入的超声图像来获取处理的超声图像。

25. 发明申请

US20060037338A1 Cogeneration system 审中-公开
标题翻译：热电联产系统
公开(公告)号：US20060037338A1
公开(公告)日：2006-02-23
申请号：US11037004
申请日：2005-01-19
申请人： Cheol Kim , Cheol Ko , Sim Ha , Baik Cheong
发明人： Cheol Kim , Cheol Ko , Sim Ha , Baik Cheong
IPC分类号： F02B43/08 , A47J39/00 , F25B27/00 , F25B29/00
CPC分类号： F25B27/02 , F25B13/00 , F25B30/06 , F25B2313/0233 , F25B2400/06 , F25B2500/02 , Y02A30/274 , Y02E20/14 , Y02P80/15
摘要： A cogeneration system in which at least one of the heat of an engine-cooling heat exchanger and the heat of an exhaust gas heat exchanger is used in a heat consumer during a heating operation of the heat consumer, and the heat of the engine-cooling heat exchanger is transferred to a radiator to allow the transferred heat to be discharged from the radiator during a cooling operation of the heat consumer, so that it is possible to minimize the size of the radiator and the amount of air blown to the radiator, and to reduce costs and noise.
摘要翻译：一种热电联产系统，其中在消费者的加热操作期间，在消费者中使用发动机冷却热交换器的热量和排气热交换器的热量中的至少一个，并且发动机冷却热交换器被传送到散热器，以便在散热器的冷却操作期间将传热的热量从散热器排出，使得可以使散热器的尺寸和吹向散热器的空气量最小化，以降低成本和噪音。

26. 发明申请

US20050130020A1 Fuel cell 有权
标题翻译：燃料电池
公开(公告)号：US20050130020A1
公开(公告)日：2005-06-16
申请号：US10499703
申请日：2003-12-10
申请人： Sam Ha , Tae Cho , Myung Park , Hong Choi , Cheol Kim , Myeong Lee , Seoug Heo , Seung Ko
发明人： Sam Ha , Tae Cho , Myung Park , Hong Choi , Cheol Kim , Myeong Lee , Seoug Heo , Seung Ko
IPC分类号： H01M4/86 , H01M8/02 , H01M8/04 , H01M8/06 , H01M8/24
CPC分类号： H01M8/065 , H01M8/0245 , H01M8/242 , H01M8/246
摘要： Fuel cell including an electrolyte, an anode and a cathode on both sides of the electrolyte, a cathode side separator at an outer side of the cathode having a flow passage for flow of air, and a flow passage between the electrolyte and the anode, thereby improving an electricity generating performance.
摘要翻译：在电解质两侧的电池，阳极和阴极的燃料电池，阴极外侧的阴极侧隔板，具有用于空气流动的流路，以及电解质与阳极之间的流路，提高发电性能。

27. 发明申请

US20050094047A1 Liquid crystal display device and method for manufacturing the same 审中-公开
标题翻译：液晶显示装置及其制造方法
公开(公告)号：US20050094047A1
公开(公告)日：2005-05-05
申请号：US11004085
申请日：2004-12-06
申请人： Cheol Kim
发明人： Cheol Kim
IPC分类号： G02F1/13 , G02F1/1343 , G02F1/1362 , G02F1/136
CPC分类号： G02F1/13439 , G02F1/136227
摘要： A method for manufacturing the LCD device includes forming a thin film transistor array having gate and data lines crossing to each other, defining pixel regions on a substrate, and thin film transistors arranged at crossings of the gate and data lines; forming a passivation layer over the entire surface of the substrate; forming a contact hole in the passivation layer exposing drain electrodes of each thin film transistor; forming an amorphous indium tin oxide film on the passivation layer; selectively crystallizing portions of the amorphous indium tin oxide film within the pixel regions by selectively irradiating light onto the amorphous indium tin oxide thin film; and forming a pixel electrode by selectively removing uncrystallized portions of the amorphous indium tin oxide thin film.
摘要翻译：一种用于制造LCD器件的方法，包括形成具有彼此交叉的栅极和数据线的薄膜晶体管阵列，在衬底上限定像素区域，以及布置在栅极和数据线的交叉处的薄膜晶体管; 在衬底的整个表面上形成钝化层; 在所述钝化层中形成暴露每个薄膜晶体管的漏电极的接触孔; 在钝化层上形成非晶态氧化铟锡膜; 通过选择性地将光照射到非晶态氧化铟锡薄膜上，使像素区域内的非晶态氧化铟锡膜的部分选择性结晶; 以及通过选择性去除非晶态氧化铟锡薄膜的未结晶部分来形成像素电极。

28. 发明授权

US10622256B2 Method of manufacturing semiconductor device using multiple patterning techniques 有权
公开(公告)号：US10622256B2
公开(公告)日：2020-04-14
申请号：US15083248
申请日：2016-03-28
申请人： Seung-Jin Mun , Dong-Hoon Khang , Woo-Ram Kim , Cheol Kim , Dong-Seok Lee , Yong-Joon Choi , Seung-Mo Ha , Do-Hyoung Kim
发明人： Seung-Jin Mun , Dong-Hoon Khang , Woo-Ram Kim , Cheol Kim , Dong-Seok Lee , Yong-Joon Choi , Seung-Mo Ha , Do-Hyoung Kim
IPC分类号： H01L21/308 , H01L21/8234 , H01L23/544
CPC分类号： H01L21/823431 , H01L21/3086 , H01L23/544 , H01L2223/54426 , H01L2223/54453
摘要： A method of manufacturing a semiconductor device may include forming a sacrificial layer on a substrate including a first region and a second region, forming a first pattern on the sacrificial layer of the second region, forming a second pattern on the sacrificial layer of the first region, forming first upper spacers on opposite sidewalls of the second pattern, removing the second pattern, etching the first sacrificial layer of the first region using the first upper spacers as an etch mask to form a third pattern, etching the first sacrificial layer of the second region using the first pattern as an etch mask to form a fourth pattern, forming first lower spacers at either side of the third pattern, forming second spacers on opposite sidewalls of the fourth pattern, removing the third pattern and the fourth pattern, and etching the substrate using the first lower spacers and the second spacers as etch masks.

29. 发明授权

US10593801B2 Semiconductor devices and methods of fabricating the same 有权
公开(公告)号：US10593801B2
公开(公告)日：2020-03-17
申请号：US15062553
申请日：2016-03-07
申请人： Tae-Jong Lee , Sanghyuk Hong , TaeYong Kwon , Sunjung Kim , Cheol Kim
发明人： Tae-Jong Lee , Sanghyuk Hong , TaeYong Kwon , Sunjung Kim , Cheol Kim
IPC分类号： H01L29/78 , H01L29/08 , H01L29/161 , H01L29/16 , H01L29/165 , H01L29/66 , H01L21/8238
摘要： Semiconductor devices and methods of fabricating the same are provided. The methods of fabricating the semiconductor devices may include providing a substrate including an active pattern protruding from the substrate, forming a first liner layer and a field isolating pattern on the substrate to cover a lower portion of the active pattern, forming a second liner layer on an upper portion of the active pattern and the field isolation pattern, and forming a dummy gate on the second liner layer.

30. 发明授权

US10103266B2 Semiconductor devices having lower and upper fins and method for fabricating the same 有权
公开(公告)号：US10103266B2
公开(公告)日：2018-10-16
申请号：US14690575
申请日：2015-04-20
申请人： Sung-Min Kim , Kyung-Seok Oh , Cheol Kim , Heon-Jong Shin , Jong-Ryeol Yoo , Hyun-Jung Lee , Seong-Hoon Jeong
发明人： Sung-Min Kim , Kyung-Seok Oh , Cheol Kim , Heon-Jong Shin , Jong-Ryeol Yoo , Hyun-Jung Lee , Seong-Hoon Jeong
IPC分类号： H01L29/78 , H01L21/84 , H01L29/66 , H01L27/12
摘要： Provided are a semiconductor device and a method for fabricating the same. The semiconductor device includes a lower fin that protrudes from a substrate and extends in a first direction, an oxide film the lower fin, an upper fin that protrudes from the oxide film and that is spaced apart from the lower fin at a position corresponding to the lower fin, and a gate structure the upper fin that extends in a second direction to intersect the upper fin, wherein germanium (Ge) is included in a portion of the oxide film located between the lower fin and the upper fin.

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