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1. 发明授权

US09190407B2 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US09190407B2
公开(公告)日：2015-11-17
申请号：US14569597
申请日：2014-12-12
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L27/088 , H01L29/78 , H01L29/66 , H01L21/8238 , H01L21/8234 , H01L29/49
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

2. 发明授权

US08916460B1 Semiconductor device and method for fabricating the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US08916460B1
公开(公告)日：2014-12-23
申请号：US14270315
申请日：2014-05-05
申请人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
发明人： Byoung-Ho Kwon , Cheol Kim , Ho-Young Kim , Se-Jung Park , Myeong-Cheol Kim , Bo-Kyeong Kang , Bo-Un Yoon , Jae-Kwang Choi , Si-Young Choi , Suk-Hoon Jeong , Geum-Jung Seong , Hee-Don Jeong , Yong-Joon Choi , Ji-Eun Han
IPC分类号： H01L29/49 , H01L29/78 , H01L21/336 , H01L29/66 , H01L21/8238
CPC分类号： H01L29/7853 , H01L21/30604 , H01L21/3065 , H01L21/3085 , H01L21/823431 , H01L21/823437 , H01L21/823481 , H01L21/823807 , H01L21/823814 , H01L21/823821 , H01L21/845 , H01L27/0886 , H01L27/1211 , H01L29/0673 , H01L29/42364 , H01L29/4238 , H01L29/49 , H01L29/66545 , H01L29/6656 , H01L29/66795 , H01L29/78 , H01L29/785
摘要： Semiconductor devices may include a semiconductor substrate with a first semiconductor fin aligned end-to-end with a second semiconductor with a recess between facing ends of the first and second semiconductor fins. A first insulator pattern is formed adjacent sidewalls of the first and second semiconductor fins and a second insulator pattern is formed within the first recess. The second insulator pattern may have a top surface higher than a top surface of the first insulator pattern, such as to the height of the top surface of the fins (or higher or lower). First and second gates extend along sidewalls and a top surface of the first semiconductor fin. A dummy gate electrode may be formed on the top surface of the second insulator. Methods for manufacture of the same and modifications are also disclosed.
摘要翻译：半导体器件可以包括具有第一半导体鳍片的半导体衬底，第一半导体鳍片端对端与第二半导体对准，第二半导体在第一和第二半导体鳍片的相对端之间具有凹陷。第一绝缘体图案形成在第一和第二半导体鳍片的相邻侧壁附近，并且在第一凹部内形成第二绝缘体图案。第二绝缘体图案可以具有高于第一绝缘体图案的顶表面的顶表面，例如高于鳍片（或更高或更低）的顶表面的高度。第一和第二栅极沿第一半导体鳍片的侧壁和顶表面延伸。可以在第二绝缘体的顶表面上形成伪栅电极。还公开了其制造方法和修改方案。

3. 发明授权

US08617991B2 Method of manufacturing semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08617991B2
公开(公告)日：2013-12-31
申请号：US13526960
申请日：2012-06-19
申请人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
发明人： Jung-Chan Lee , Yoo-Jung Lee , Ki-Hyung Ko , Dae-Young Kwak , Seung-Jae Lee , Jae-Sung Hur , Sang-Bom Kang , Cheol Kim , Bo-Un Yoon
IPC分类号： H01L21/44
CPC分类号： H01L29/4983 , H01L21/76895 , H01L21/82345 , H01L29/49 , H01L29/66545 , H01L29/78
摘要： A method of manufacturing a semiconductor device includes forming an interlayer dielectric film that has first and second trenches on first and second regions of a substrate, respectively, forming a first metal layer along a sidewall and a bottom surface of the first trench and along a top surface of the interlayer dielectric film in the first region, forming a second metal layer along a sidewall and a bottom surface of the second trench and along a top surface of the interlayer dielectric film in the second region, forming a first sacrificial layer pattern on the first metal layer such that the first sacrificial layer fills a portion of the first trench, forming a first electrode layer by etching the first metal layer and the second metal layer using the first sacrificial layer pattern, and removing the first sacrificial layer pattern.
摘要翻译：一种制造半导体器件的方法包括：在衬底的第一和第二区域上分别形成具有第一和第二沟槽的层间电介质膜，沿着第一沟槽的侧壁和底表面沿顶部形成第一金属层在所述第一区域中的所述层间电介质膜的表面，沿着所述第二沟槽的侧壁和底表面沿着所述第二区域中的所述层间电介质膜的顶表面形成第二金属层，在所述第二区域中形成第一牺牲层图案第一金属层，使得第一牺牲层填充第一沟槽的一部分，通过使用第一牺牲层图案蚀刻第一金属层和第二金属层形成第一电极层，以及去除第一牺牲层图案。

4. 发明申请

US20130182522A1 MEMORY DEVICE, METHOD OF OPERATING THE SAME, AND APPARATUS INCLUDING THE SAME 有权
标题翻译：存储器件，其操作方法和包括其的装置
公开(公告)号：US20130182522A1
公开(公告)日：2013-07-18
申请号：US13613492
申请日：2012-09-13
申请人： Young-Il LIM , Cheol Kim , Jung Sik Kim , Yun Sang Lee
发明人： Young-Il LIM , Cheol Kim , Jung Sik Kim , Yun Sang Lee
IPC分类号： G11C11/402
CPC分类号： G11C11/406 , G11C5/04 , G11C8/12 , G11C11/40618
摘要： A method of operating a memory device includes masking at least one bank among a plurality of banks in response to a mode register writing command; and performing a refresh operation on a plurality of rows in one of unmasked banks in response to a first per-bank refresh command.
摘要翻译：操作存储器件的方法包括响应于模式寄存器写入命令来屏蔽多个存储体中的至少一个存储体; 以及响应于第一个每个银行刷新命令，对未屏蔽的银行之一中的多个行执行刷新操作。

5. 发明授权

US08379477B2 Sub-word-line driving circuit, semiconductor memory device having the same, and method of controlling the same 有权
标题翻译：子字线驱动电路，具有其的半导体存储器件及其控制方法
公开(公告)号：US08379477B2
公开(公告)日：2013-02-19
申请号：US13019858
申请日：2011-02-02
申请人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
发明人： Cheol Kim , Sang-Kyun Park , Jung-Bae Lee , Jun-Phyo Lee
IPC分类号： G11C8/10
CPC分类号： G11C8/14 , G11C8/08
摘要： Provided is a semiconductor memory device including a sub-word-line driving circuit capable of reducing an amount of leakage current due to coupling. The semiconductor memory device includes a word-line enable signal generating circuit and a sub-word-line driving circuit. The sub-word-line driving circuit provides a pull-down current path between a selected word line and ground for a pulse type period of time in a precharge mode following an active mode for the selected word line, generates a word line driving signal on the basis of a main word line driving signal, a first sub-word-line control signal, and a second sub-word-line control signal, and provides the word line driving signal to a memory cell array. The semiconductor memory device may reduce an amount of leakage current flowing to a ground through the sub-word-line driving circuit.
摘要翻译：提供了一种半导体存储器件，其包括能够减少由耦合引起的漏电流量的子字线驱动电路。半导体存储器件包括字线使能信号发生电路和子字线驱动电路。子字线驱动电路在所选字线的有效模式之后的预充电模式中的脉冲类型时段期间，在所选字线和地之间提供下拉电流路径，生成字线驱动信号主字线驱动信号的基础，第一子字线控制信号和第二子字线控制信号，并将字线驱动信号提供给存储单元阵列。半导体存储器件可以减少通过子字线驱动电路流向地的漏电流量。

6. 发明申请

US20130016574A1 SEMICONDUCTOR MEMORY DEVICE HAVING IMPROVED REFRESH CHARACTERISTICS 有权
标题翻译：具有改进的刷新特性的半导体存储器件
公开(公告)号：US20130016574A1
公开(公告)日：2013-01-17
申请号：US13548484
申请日：2012-07-13
申请人： Jung-sik Kim , Cheol Kim , Sang-ho Shin , Jung-bae Lee , Chan-yong Lee , Sung-min Yim , Tae-seong Jang , Joo-sun Choi
发明人： Jung-sik Kim , Cheol Kim , Sang-ho Shin , Jung-bae Lee , Chan-yong Lee , Sung-min Yim , Tae-seong Jang , Joo-sun Choi
IPC分类号： G11C29/08 , G11C7/00
CPC分类号： G11C29/50016 , G11C5/04 , G11C11/40 , G11C11/406 , G11C11/40615 , G11C11/40622 , G11C2211/4061 , G11C2211/4065
摘要： A semiconductor memory device having improved refresh characteristics includes a memory array including a plurality of memory cells; a test unit configured to test refresh characteristics of the memory array and generate a first fail address signal; a storage unit configured to store the first fail address signal; and a refresh unit configured to perform a refresh operation on the memory array, wherein the refresh unit is configured to receive the first fail address signal from the storage unit, perform the refresh operation on a first memory cell that does not correspond to the first fail address signal according to a first period, and perform the refresh operation on a second memory cell that corresponds to the first fail address signal according to a second period that is shorter than the first period.
摘要翻译：具有改进的刷新特性的半导体存储器件包括包括多个存储器单元的存储器阵列; 测试单元，被配置为测试所述存储器阵列的刷新特性并产生第一故障地址信号; 存储单元，被配置为存储所述第一失败地址信号; 以及刷新单元，被配置为对所述存储器阵列执行刷新操作，其中所述刷新单元被配置为从所述存储单元接收所述第一故障地址信号，对与所述第一故障不对应的第一存储器单元执行刷新操作根据第一期间的地址信号，根据比第一期间短的第二期间对与第一失败地址信号对应的第二存储单元进行刷新动作。

7. 发明申请

US20070140885A1 Scroll compressor 有权
标题翻译：涡旋压缩机
公开(公告)号：US20070140885A1
公开(公告)日：2007-06-21
申请号：US11641027
申请日：2006-12-19
申请人： Jeong Suh , Cheol Kim , Dong Shin
发明人： Jeong Suh , Cheol Kim , Dong Shin
IPC分类号： F01C1/02 , F01C1/063
CPC分类号： F04C18/0215 , F04C23/008 , F04C29/0085 , F04C29/02 , F04C2240/60
摘要： A scroll-type compressor includes a compression unit, a main frame supporting the compression unit, and a driving shaft having an oil supply path. The oil supply path is located eccentrically with the driving shaft and an upper part of the driving shaft is supported by the main frame. The compressor also has a motor for rotating the driving shaft, an oil cap located on an upper side of a rotor of the motor, and a balance member to compensate the driving shaft.
摘要翻译：涡旋式压缩机包括压缩单元，支撑压缩单元的主框架和具有供油路径的驱动轴。供油路径与驱动轴偏心定位，驱动轴的上部由主框架支撑。压缩机还具有用于使驱动轴旋转的电动机，位于电动机的转子的上侧的油帽和补偿驱动轴的平衡构件。

8. 发明申请

US20070135465A1 Fab I Inhibitor and Process for Preparing Same 有权
标题翻译： Fab I抑制剂及其制备方法
公开(公告)号：US20070135465A1
公开(公告)日：2007-06-14
申请号：US11548349
申请日：2006-10-11
申请人： Cheol Kim , Doug Shin , Seonggu Ro , Joong Cho , Young Hyun
发明人： Cheol Kim , Doug Shin , Seonggu Ro , Joong Cho , Young Hyun
IPC分类号： A61K31/513 , A61K31/4412 , C07D213/69 , C07D239/46
CPC分类号： C07D213/64 , C07D213/69 , C07D213/70 , C07D213/74 , C07D237/16 , C07D239/47 , C07D239/52 , C07D401/06 , C07D401/12 , C07D405/06 , C07D405/12 , C07D405/14 , C07D409/12 , C07D409/14 , C07D413/06 , C07D413/12 , C07D413/14 , C07D417/06 , C07D417/14
摘要： A compound which is effective for inhibiting Fab I, and a method for treating a bacterial infection.
摘要翻译：对抑制Fab I有效的化合物和细菌感染的治疗方法。

9. 发明申请

US20070016073A1 Apparatus and method for processing an ultrasound spectrum image 有权
标题翻译：用于处理超声波光谱图像的装置和方法
公开(公告)号：US20070016073A1
公开(公告)日：2007-01-18
申请号：US11413157
申请日：2006-04-28
申请人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
发明人： Hye Kim , Ki Lee , Sung Kim , Eun Yang , Cheol Kim
IPC分类号： A61B6/00
CPC分类号： G01S7/52077 , A61B8/06 , G01S7/52026 , G01S15/584 , G01S15/8979 , G06K9/0055
摘要： There is provided a method of processing an ultrasound spectrum image. According to such method, a spectrum image is formed based on ultrasound data and then the noise is removed from the spectrum image. The noise-removed spectrum image is matched with one or more spectrum models representing specific spectrum types. Then, whether or not the noise-removed spectrum image contains an aliasing is checked. If the noise-removed spectrum image contains the aliasing, then the aliasing is removed from the noise-removed spectrum image to provide a noise-removed spectrum image without the aliasing. Thereafter, contour tracing is performed on the noise-removed spectrum image without the aliasing to detect contour points. Further, peak tracing is performed on the noise-removed spectrum image without the aliasing to detect peaks.
摘要翻译：提供了一种处理超声波频谱图像的方法。根据这种方法，基于超声数据形成频谱图像，然后从频谱图像中去除噪声。噪声消除的光谱图像与表示特定光谱类型的一个或多个光谱模型相匹配。然后，检查噪声去除的频谱图像是否包含混叠。如果噪声去除的频谱图像包含混叠，则从去除噪声的频谱图像中去除混叠，以提供没有混叠的噪声去除的频谱图像。此后，对噪声去除的频谱图像执行轮廓跟踪，而不需要混叠来检测轮廓点。此外，在没有混叠的噪声去除的频谱图像上执行峰值跟踪以检测峰值。

10. 发明申请

US20060278299A1 Method of charging low temperature liquified gas 审中-公开
标题翻译：低温液化气的充电方法
公开(公告)号：US20060278299A1
公开(公告)日：2006-12-14
申请号：US11404595
申请日：2006-04-17
申请人： Hyang Jang , Yuichi Iikubo , Dae Kim , Cheol Kim
发明人： Hyang Jang , Yuichi Iikubo , Dae Kim , Cheol Kim
IPC分类号： F17C13/00 , B65B1/04
CPC分类号： F04B43/06 , F04B15/08 , F04B43/067 , F17C2205/0355 , F17C2227/0142 , Y02E60/321
摘要： Disclosed is a method of charging a low temperature liquefied gas in a high pressure charging cylinder using a diaphragm pump. The method is advantageous in that it is possible to charge a low temperature liquefied gas which is to be made highly pure in a high pressure gas cylinder using a simple process in which the liquefied gas does not deteriorate and small energy is consumed.
摘要翻译：公开了使用隔膜泵对高压充气筒中的低温液化气进行充电的方法。该方法的优点在于，可以使用液化气体不劣化并且消耗小能量的简单方法对在高压气瓶中制成高纯度的低温液化气进行充电。

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