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21. 发明申请

US20100031580A1 Door of refrigerator and method for manufacturing the same 有权
标题翻译：冰箱门和制造方法
公开(公告)号：US20100031580A1
公开(公告)日：2010-02-11
申请号：US12385262
申请日：2009-04-02
申请人： Jeong Wook Lee , Sang Chul Ryu
发明人： Jeong Wook Lee , Sang Chul Ryu
IPC分类号： E06B1/04 , B21D47/00
CPC分类号： B29C44/1233 , B29C44/1238 , B29C44/1257 , B29C65/7811 , B29C65/7817 , F25D23/028 , F25D2400/18 , Y10T29/49629
摘要： A refrigerator door in which a decoration member is mounted to a door frame using a foam material is disclosed. In the refrigerator door, the foam material fills a space formed between the decoration member mounted to a front side of the door frame and a rear panel mounted to a rear side of the door frame. Accordingly, the decoration member can be fixed to the door frame through direct contact with the foam material.
摘要翻译：公开了一种使用泡沫材料将装饰构件安装在门框上的冰箱门。在冰箱门中，泡沫材料填充安装在门框的前侧的装饰构件和安装在门框的后侧的后面板之间形成的空间。因此，装饰构件可以通过与泡沫材料直接接触而固定在门框上。

22. 发明授权

US07470938B2 Nitride semiconductor light emitting device 有权
标题翻译：氮化物半导体发光器件
公开(公告)号：US07470938B2
公开(公告)日：2008-12-30
申请号：US10983637
申请日：2004-11-09
申请人： Jae Hoon Lee , Jeong Wook Lee , Hyun Kyung Kim , Yong Chun Kim
发明人： Jae Hoon Lee , Jeong Wook Lee , Hyun Kyung Kim , Yong Chun Kim
IPC分类号： H01L29/06 , H01L31/0328 , H01L31/0336 , H01L31/072 , H01L31/109 , H01L29/24 , H01L33/00 , H01L29/22 , H01L21/00
CPC分类号： H01L33/32 , H01L33/007 , H01L33/22 , Y10S257/918
摘要： In a nitride semiconductor light emitting device having patterns formed on the upper and lower surfaces of a substrate from which light is emitted in a flip chip bonding structure, the patterns are capable of changing light inclination at the upper and lower surfaces of the substrate to decrease total reflection at the interfaces, thereby improving light emitting efficiency. The device includes a substrate having upper and lower surfaces on which predetermined patterns are formed such that light can be incident within a critical angle, the substrate allowing a gallium nitride-based semiconductor material to be grown thereon, an n-type nitride semiconductor layer formed on the upper surface of the substrate, an active layer formed on the upper surface of the n-type nitride semiconductor layer such that the n-type nitride semiconductor layer is partially exposed, a p-type nitride semiconductor layer formed on the upper surface of the active layer, a p-electrode formed on the upper surface of the p-type nitride semiconductor layer, and an n-side electrode formed on the partially exposed n-type nitride semiconductor layer.
摘要翻译：在具有形成在基板的上表面和下表面上的图案的氮化物半导体发光器件中，以倒装芯片接合结构发射光，该图案能够改变在基板的上表面和下表面处的光倾斜度在界面处的全反射，从而提高发光效率。该装置包括具有上表面和下表面的基板，预定图案形成在其上，使得光可以临界角入射，所述基板允许在其上生长氮化镓基半导体材料，形成n型氮化物半导体层在所述基板的上表面上形成有在n型氮化物半导体层的上表面上形成的n型氮化物半导体层被部分露出的有源层，形成在所述n型氮化物半导体层的上表面上的p型氮化物半导体层有源层，形成在p型氮化物半导体层的上表面上的p电极和形成在部分暴露的n型氮化物半导体层上的n侧电极。

23. 发明申请

US20130217087A1 NOVEL MUTANT MICROORGANISM PRODUCING SUCCINIC ACID SIMULTANEOUSLY USING SUCROSE AND GLYCEROL, AND METHOD FOR PREPARING SUCCINIC ACID USING SAME 有权
标题翻译：使用蔗糖和甘油同时生产同种酸的新型突变微生物，以及使用其制备磺酸的方法
公开(公告)号：US20130217087A1
公开(公告)日：2013-08-22
申请号：US13819339
申请日：2011-08-30
申请人： Sang Yup Lee , Jeong Wook Lee , Sol Choi , Jongho Yi
发明人： Sang Yup Lee , Jeong Wook Lee , Sol Choi , Jongho Yi
IPC分类号： C12P7/46
CPC分类号： C12P7/46 , C12N1/20 , C12N15/52 , C12R1/01
摘要： The present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously as carbon sources. More particularly, the present invention relates to a succinic acid-producing mutant microorganism that is able to utilize sucrose and glycerol simultaneously for succinic acid production, the mutant organism being obtained by relieving the mechanism of sucrose-mediated catabolite repression of glycerol in a succinic acid-producing microorganism.As described above, when the succinic acid-producing mutant microorganism is cultured, it utilizes sucrose and glycerol simultaneously so that succinic acid can be produced with high productivity in a maximum yield approaching the theoretical yield while the production of byproducts is minimized. In addition, according to the present invention, various reduced chemicals which have been produced in low yields in conventional methods can be more effectively produced.
摘要翻译：本发明涉及能够同时使用蔗糖和甘油作为碳源的产琥珀酸突变体微生物。更具体地，本发明涉及能够同时使用蔗糖和甘油进行琥珀酸生产的产琥珀酸的突变体微生物，其通过减轻甘油在琥珀酸中的蔗糖介导的分解代谢物抑制的机制而获得生产微生物。如上所述，当培养产琥珀酸的突变体微生物时，它同时使用蔗糖和甘油，使得以最大产率接近理论产率的高生产率生产琥珀酸，同时副产物的产生最小化。此外，根据本发明，可以更有效地制造在常规方法中以低收率生产的各种还原化学品。

24. 发明申请

US20120231499A1 HIGH-MOLECULAR-WEIGHT RECOMBINANT SILK OR SILK-LIKE PROTEIN AND MICRO- OR NANO-SIZED SPIDER SILK OR SILK-LIKE FIBER PRODUCED THEREFROM 审中-公开
标题翻译：高分子量重量丝素或丝状蛋白质和微米或纳米尺寸的天花丝绸或丝状纤维生产
公开(公告)号：US20120231499A1
公开(公告)日：2012-09-13
申请号：US13124818
申请日：2011-03-11
申请人： Sang Yup Lee , Xiaoxia Xia , Zhi Gang Qian , Jeong Wook Lee , Young Hwan Park
发明人： Sang Yup Lee , Xiaoxia Xia , Zhi Gang Qian , Jeong Wook Lee , Young Hwan Park
IPC分类号： C12P21/02 , D01D5/06 , C07K14/00
CPC分类号： C07K14/43518 , D01D5/0007 , D01D5/06 , D01F4/02
摘要： A high-molecular-weight recombinant silk or silk-like protein having a molecular weight which is substantially similar to that of native silk protein, and a micro- or nano-sized spider silk or silk-like fiber having improved physical properties, produced therefrom. The recombinant silk or silk-like protein according to the invention has high molecular weight, like dragline silk proteins from spiders, while a fiber produced therefrom has excellent physical properties compared to a fiber produced from native silk protein. Thus, the recombinant silk or silk-like protein and the spider silk or silk-like fiber produced therefrom will be highly useful in various industrial applications, including bioengineering applications and medical applications.
摘要翻译：具有与天然丝蛋白基本相似的分子量的高分子量重组丝或丝状蛋白质，以及由其制备的具有改善的物理性质的微米或纳米尺寸的蜘蛛丝或丝状纤维。根据本发明的重组丝或丝状蛋白具有高分子量，如来自蜘蛛的拉丝丝蛋白，而由其制备的纤维与由天然丝蛋白产生的纤维相比具有优异的物理性能。因此，重组丝或丝状蛋白质以及由其生产的蜘蛛丝或丝状纤维在各种工业应用中非常有用，包括生物工程应用和医疗应用。

25. 发明授权

US08039850B2 White light emitting device 有权
标题翻译：白色发光装置
公开(公告)号：US08039850B2
公开(公告)日：2011-10-18
申请号：US12250133
申请日：2008-10-13
申请人： Jeong Wook Lee , Yong Jo Park , Cheol Soo Sone
发明人： Jeong Wook Lee , Yong Jo Park , Cheol Soo Sone
IPC分类号： H01L29/18 , H01L33/00
CPC分类号： H01L25/0753 , H01L33/50 , H01L2224/48091 , H01L2224/49107 , H01L2933/0091 , H01L2924/00014
摘要： There is provided a white light emitting device that prevents a red phosphor from resorbing wavelength-converted light to improve white luminous efficiency. A white light emitting device according to an aspect of the invention includes a package body; at least two LED chips mounted to the package body and emitting excitation light; and a molding unit including phosphors, absorbing the excitation light and emitting wavelength-converted light, in regions of the molding unit divided according to the LED chips and molding the LED chips. According to the aspect of the invention, since the phosphor for converted red light can be prevented from resorbing light generated from other regions of the molding unit, the white light emitting device that can improve white luminous efficiency or control color rendering and color temperature by adjusting a mixing ratio of converted light for white light emission.
摘要翻译：提供了防止红色荧光体再吸收波长转换的光以提高白色发光效率的白色发光装置。根据本发明的一个方面的白色发光器件包括封装体; 至少两个LED芯片安装到封装主体并发射激发光; 以及模制单元，其包括在根据LED芯片划分的模制单元的区域中吸收激发光并发射波长转换的光的荧光体，并且模制LED芯片。根据本发明的方面，由于可以防止用于转换的红光的荧光体吸收由成型单元的其它区域产生的光，所以可以通过调节白光发光器件来提高白色发光效率或控制显色和色温用于白光发射的转换光的混合比。

26. 发明申请

US20100155699A1 NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：氮化物半导体器件
公开(公告)号：US20100155699A1
公开(公告)日：2010-06-24
申请号：US12580152
申请日：2009-10-15
申请人： Tan Sakong , Youn Joon Sung , Jeong Wook Lee
发明人： Tan Sakong , Youn Joon Sung , Jeong Wook Lee
IPC分类号： H01L29/15
CPC分类号： H01L33/32 , H01L33/02 , H01L33/12
摘要： A nitride semiconductor device includes n-type and p-type nitride semiconductor layers, an active layer, the active layer having a lamination of quantum barrier layers and quantum well layers, a thermal stress control layer disposed between the n-type nitride semiconductor layer and the active layer, and formed of a material having a smaller thermal expansion coefficient than the n-type and p-type nitride semiconductor layers, and a lattice stress control layer disposed between the thermal stress control layer and the active layer, and including a first layer and a second layer.
摘要翻译：氮化物半导体器件包括n型和p型氮化物半导体层，有源层，具有量子势垒层和量子阱层叠层的有源层，设置在n型氮化物半导体层和n型氮化物半导体层之间的热应力控制层所述活性层由具有比n型和p型氮化物半导体层更小的热膨胀系数的材料形成，以及布置在所述热应力控制层和所述有源层之间的晶格应力控制层，并且包括第一层和第二层。

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