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    • 23. 发明授权
    • Engine structure with lubricating oil reservoir
    • 发动机结构带润滑油箱
    • US09234443B2
    • 2016-01-12
    • US13702870
    • 2011-05-17
    • Takao Ito
    • Takao Ito
    • F01M9/00F01M5/02F01M11/02F16N7/02F01M11/00
    • F01M9/00F01M5/025F01M11/02F01M2011/0095F01M2011/026F16N7/02
    • An engine structure is provided that basically includes a cylinder block, an oil circulation pathway and a lubricating oil reservoir. The cylinder block has an upper end for receiving a cylinder head, a lower end for receiving an oil pan, and a crankshaft receiving portion. The oil circulation pathway is arranged to convey lubricating oil by gravity to at least an area located above the crankshaft receiving portion of the cylinder block for supplying lubricating oil to a crankshaft. The lubricating oil reservoir is arranged to store lubricating oil. The lubricating oil reservoir has an open top end for receiving downwardly flowing lubricating oil. The open top end of the lubricating oil reservoir is arranged relative to the oil circulation pathway such that lubricating oil spilling out of the open top end of the lubricating oil reservoir falls into the oil circulation pathway.
    • 提供了一种发动机结构,其基本上包括气缸体,油循环路径和润滑油储存器。 气缸体具有用于接收气缸盖的上端,用于接收油盘的下端和曲轴接收部。 油循环路径被布置成通过重力将润滑油输送到位于气缸体的曲轴接收部分上方的至少一个区域,以将润滑油供给到曲轴。 润滑油储存器布置成存储润滑油。 润滑油储存器具有敞开的顶端,用于接收向下流动的润滑油。 润滑油储存器的开放顶端相对于油循环路径布置,使得从润滑油储存器的敞开的顶端溢出的润滑油落入油循环路径中。
    • 26. 发明授权
    • Mechanical press
    • 机械压力机
    • US07013800B2
    • 2006-03-21
    • US10631419
    • 2003-07-30
    • Hisanobu KanamaruTakao Ito
    • Hisanobu KanamaruTakao Ito
    • B30B1/26
    • B30B1/263B30B15/0035B30B15/041B30B15/068Y10T74/18208
    • The object of this invention is to provide a mechanical press that presents no inconvenience in press operations despite its low height, providing great stability and excellent durability.The invention comprises a slide guiding mechanism provided at an upper part of the adjusting member for converting the rotary motion of the eccentric part of the crankshaft into a linear reciprocating motion and a position adjusting mechanism provided at a lower part, as well as an adjusting member that advances and retracts relative to the slide, which serves for the prevention of rotation and guidance.
    • 本发明的目的是提供一种机械冲压机,尽管其低的高度也不会带来冲压操作的不便,但提供了极大的稳定性和优异的耐久性。 本发明包括一个滑动引导机构,其设置在调节构件的上部,用于将曲轴的偏心部分的旋转运动转换为直线往复运动,以及设置在下部的位置调节机构以及调节构件 相对于滑块进退,这用于防止旋转和引导。
    • 29. 发明授权
    • Semiconductor protection circuit and semiconductor protection device
    • 半导体保护电路和半导体保护装置
    • US5604655A
    • 1997-02-18
    • US302998
    • 1994-09-12
    • Takao Ito
    • Takao Ito
    • H01L27/04H01L21/822H01L27/06H01L29/78H03K17/0812H02H9/00
    • H01L29/7838H01L27/0266H01L29/1083H03K17/0812
    • A semiconductor protection circuit for protecting an internal circuit from a surge voltage comprises a depletion type PMOS transistor in which its drain is connected to the input/output terminal of the internal circuit. The control terminal is connected to the gate of the PMOS transistor. The control terminal applies a high voltage or low voltage to the gate in accordance with the ON or OFF state of the power of the internal circuit. When the high or low voltage is applied to the gate, the channel of the PMOS transistor is rendered non-conductive or conductive, respectively. The source of the PMOS transistor is grounded via a PN diode and a junction capacitor provided parallel. When a negative surge voltage is applied, the diode is rendered conductive, thereby protecting the internal circuit. When a positive surge voltage is applied, the diode is broken down, thereby protecting the internal circuit. The surge voltage is made small by the capacitor's static capacitance. When the control terminal is in a high potential state, the channel of the PMOS transistor disappears. Therefore, the internal circuit is released from the diode and capacitor. Consequently, during operation of the internal circuit, the parasitic capacitance at the input/output terminal is reduced.
    • 用于保护内部电路免受浪涌电压的半导体保护电路包括其漏极连接到内部电路的输入/输出端的耗尽型PMOS晶体管。 控制端子连接到PMOS晶体管的栅极。 控制端子根据内部电路的电源的接通或断开状态向门施加高电压或低电压。 当高电压或低电压施加到栅极时,PMOS晶体管的沟道分别变为不导电或导通。 PMOS晶体管的源极通过PN二极管和并联提供的结电容器接地。 当施加负浪涌电压时,二极管导通,从而保护内部电路。 当施加正浪涌电压时,二极管被分解,从而保护内部电路。 电容的静态电容使浪涌电压变小。 当控制端子处于高电位状态时,PMOS晶体管的沟道消失。 因此,内部电路从二极管和电容器释放。 因此,在内部电路工作期间,输入/输出端子处的寄生电容减小。