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21. 发明授权

US08237251B2 Semiconductor device including semiconductor chips with different thickness 有权
标题翻译：包括具有不同厚度的半导体芯片的半导体器件
公开(公告)号：US08237251B2
公开(公告)日：2012-08-07
申请号：US12357895
申请日：2009-01-22
申请人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
发明人： Mitsuaki Katagiri , Hisashi Tanie , Jun Kayamori , Dai Sasaki , Hiroshi Moriya
IPC分类号： H01L23/02 , H01L23/485 , H01L25/10
CPC分类号： H01L25/105 , H01L23/3128 , H01L24/29 , H01L24/32 , H01L24/50 , H01L24/86 , H01L25/0657 , H01L2224/29101 , H01L2224/29191 , H01L2225/0652 , H01L2225/06555 , H01L2225/06579 , H01L2225/1023 , H01L2225/1058 , H01L2924/01005 , H01L2924/01006 , H01L2924/01029 , H01L2924/01033 , H01L2924/0105 , H01L2924/01082 , H01L2924/014 , H01L2924/10253 , H01L2924/15311 , H01L2924/15331 , H01L2924/30105 , H01L2924/3511 , H01L2924/00
摘要： In a stacked-type semiconductor device, a first semiconductor device and at least one second semiconductor device are stacked. The first semiconductor device includes a wiring board and a first semiconductor chip mounted on the wiring board. The second semiconductor device includes a wiring board and a second semiconductor chip mounted on the wiring board. The thickness of the second semiconductor chip of each second semiconductor device is thicker than the thickness of the first semiconductor chip.
摘要翻译：在层叠型半导体器件中，堆叠第一半导体器件和至少一个第二半导体器件。第一半导体器件包括布线板和安装在布线板上的第一半导体芯片。第二半导体器件包括布线板和安装在布线板上的第二半导体芯片。每个第二半导体器件的第二半导体芯片的厚度比第一半导体芯片的厚度厚。

22. 发明申请

US20110138406A1 ELECTRONIC DEVICE 有权
标题翻译：电子设备
公开(公告)号：US20110138406A1
公开(公告)日：2011-06-09
申请号：US13056808
申请日：2010-01-04
申请人： Motonari Ogura , Yurihiro Iwata , Hiroshi Moriya , Hiroki Takamori
发明人： Motonari Ogura , Yurihiro Iwata , Hiroshi Moriya , Hiroki Takamori
IPC分类号： G11B19/20
CPC分类号： G11B31/02 , G11B33/142
摘要： The electronic device pertaining to an embodiment comprises a housing that holds an optical disk. The housing comprises a holding space holding an optical disk, a first internal space being apart from the holding space and in which a first electronic component controlling a pickup is disposed, an intake channel leading from the first internal space to the holding space, and an exhaust channel leading from the holding space to a specific space being distinct from the first internal space.
摘要翻译：属于实施例的电子设备包括保持光盘的外壳。壳体包括保持光盘的保持空间，与保持空间分开的第一内部空间，并且其中设置有控制拾取器的第一电子部件，从第一内部空间引导到保持空间的进气通道，以及从保持空间引导到与第一内部空间不同的特定空间的排气通道。

23. 发明授权

US07792173B2 Semiconductor laser device 有权
标题翻译：半导体激光器件
公开(公告)号：US07792173B2
公开(公告)日：2010-09-07
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko Iga , Yutaka Inoue , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/00
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

24. 发明申请

US20090147816A1 SEMICONDUCTOR LASER DEVICE 有权
标题翻译：半导体激光器件
公开(公告)号：US20090147816A1
公开(公告)日：2009-06-11
申请号：US12328186
申请日：2008-12-04
申请人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
发明人： Yoshihiko IGA , Yutaka Inouke , Hiroshi Moriya , Yasuhisa Semba , Susumu Sorimachi
IPC分类号： H01S5/024 , H01S5/022
CPC分类号： H01S5/0224 , B82Y20/00 , H01S5/02212 , H01S5/02272 , H01S5/02476 , H01S5/0425 , H01S5/0683 , H01S5/22 , H01S5/34326 , H01S5/4031
摘要： In a multi-beam semiconductor laser device, relative difference in shear strain applied to each of light-emitting portions of a laser chip mounted on a submount is suppressed, thereby reducing relative difference in polarization angle. A semiconductor laser element array mounted on a submount has a structure in which a semiconductor layer having two ridge portions is stacked on a substrate, and Au plating layers are formed on the surfaces of p type electrodes formed on the ridge portions. In each of the ridge portions, a central position of the Au plating layer in a width direction is intentionally displaced with respect to a central position of the underlying light-emitting portion in a width direction, so that shear strain is applied to each of the light-emitting portions at a stage before the semiconductor laser element array is mounted on the submount.
摘要翻译：在多光束半导体激光装置中，抑制了施加到安装在基座上的激光芯片的各发光部分的剪切应变的相对差异，从而减小了偏振角的相对差异。安装在基座上的半导体激光元件阵列具有其中在基板上层叠具有两个脊部的半导体层的结构，并且在形成在脊部上的p型电极的表面上形成Au镀层。在每个脊部中，Au镀层在宽度方向上的中心位置相对于下面的发光部分的宽度方向的中心位置有意地移位，使得剪切应变施加到半导体激光元件阵列之前的阶段的发光部分安装在基座上。

25. 发明授权

US07241685B2 Semiconductor device and method of manufacturing the same 失效
标题翻译：半导体装置及其制造方法
公开(公告)号：US07241685B2
公开(公告)日：2007-07-10
申请号：US10390413
申请日：2003-03-18
申请人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shinji Nishihara , Masashi Sahara
发明人： Hiroshi Moriya , Tomio Iwasaki , Hideo Miura , Shinji Nishihara , Masashi Sahara
IPC分类号： H01L21/44
CPC分类号： H01L23/53223 , H01L2924/0002 , H01L2924/00
摘要： There is provided a semiconductor device having a wiring structure which reduces possibility of a short circuit, and method of making the device. Besides, there is provided a semiconductor device having high reliability. Further, there is provided a semiconductor device having high yield. A wiring line is formed at one main surface side of a semiconductor substrate, and has a laminate structure of an adjacent conductor layer and a main wiring layer. The main wiring layer contains an added element to prevent migration. The adjacent conductor layer is formed of a material for preventing a main constituent element and the added element of the main wiring layer from diffusing into the substrate beneath the adjacent conductor layer, and the concentration of the added element at a location close to an interface between the adjacent conductor layer and the main wiring layer is low compared to the concentration of the added element in the main wiring layer spaced from the adjacent conductor layer.
摘要翻译：提供一种具有降低短路可能性的布线结构的半导体器件及其制造方法。此外，提供了具有高可靠性的半导体器件。此外，提供了一种具有高产率的半导体器件。在半导体衬底的一个主表面侧形成布线，并且具有相邻导体层和主布线层的叠层结构。主配线层包含一个添加的元素以防止迁移。相邻的导体层由用于防止主要构成元素和主配线层的添加元素扩散到相邻导体层下方的基板中的材料形成，并且添加元素在靠近界面处的位置的浓度与相邻的导体层间隔开的主配线层的添加元素的浓度相比，相邻的导体层和主布线层的电位低。

26. 发明授权

US07217971B2 Miniaturized semiconductor device with improved dielectric properties 有权
标题翻译：具有改善介电特性的小型半导体器件
公开(公告)号：US07217971B2
公开(公告)日：2007-05-15
申请号：US10848473
申请日：2004-05-17
申请人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
发明人： Tomio Iwasaki , Hiroshi Moriya , Hideo Miura , Shuji Ikeda
IPC分类号： H01L31/119
CPC分类号： H01L21/823462 , H01L21/28097 , H01L21/28185 , H01L21/28194 , H01L21/28518 , H01L21/31604 , H01L21/823412 , H01L27/1085 , H01L27/10873 , H01L29/045 , H01L29/4908 , H01L29/4975 , H01L29/513 , H01L29/516 , H01L29/517 , H01L29/78696
摘要： Diffusion layers 2–5 are formed on a silicon substrate 1, and gate dielectric films 6, 7 and gate electrodes 8, 9 are formed on these diffusion layers 2–5 so as to be MOS transistors. Zirconium oxide or hafnium oxide is used as a major component of gate dielectric films 6, 7. Gate dielectric films 6, 7 are formed, for example, by CVD. As substrate 1, there is used one of which the surface is (111) crystal face so as to prevent diffusion of oxygen into silicon substrate 1 or gate electrodes 8, 9. In case of using a substrate of which the surface is (111) crystal face, diffusion coefficient of oxygen is less than 1/100 of the case in which a silicon substrate of which the surface is (001) crystal face is used, and oxygen diffusion is controlled. Thus, oxygen diffusion is controlled, generation of leakage current is prevented and properties are improved. There is realized a semiconductor device having high reliability and capable of preventing deterioration of characteristics concomitant to miniaturization.
摘要翻译：在硅衬底1上形成扩散层2-5，并且在这些扩散层2-5上形成栅电介质膜6,7和栅电极8,9，以便成为MOS晶体管。氧化锆或氧化铪被用作栅介质膜6,7的主要成分。栅介质膜6,7例如通过CVD形成。作为基板1，使用表面为（111）晶面的其中之一，以防止氧扩散到硅基板1或栅电极8,9中。在使用表面为（111）晶面的基板的情况下，在使用表面为（001）晶面的硅基板的情况下，氧的扩散系数小于1/100，氧气扩散被控制。因此，控制氧扩散，防止漏电流的产生，提高性能。实现了具有高可靠性并且能够防止伴随小型化的特性劣化的半导体器件。

27. 发明授权

US06877383B2 Capacitive type pressure sensor 有权
标题翻译：电容式压力传感器
公开(公告)号：US06877383B2
公开(公告)日：2005-04-12
申请号：US10247637
申请日：2002-09-20
申请人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
发明人： Junichi Horie , Yasuo Onose , Norio Ichikawa , Seiji Kuryu , Satoshi Shimada , Akihiko Saito , Keiji Hanzawa , Masahiro Matsumoto , Hiroshi Moriya , Akio Yasukawa , Atsushi Miyazaki
IPC分类号： G01L9/00 , G01L9/12
CPC分类号： G01L9/0073
摘要： By sealing a diaphragm with less processes and lower cost and reducing deformation due to remaining stress, a stable and highly reliable pressure sensor construction is proposed. The pressure sensor is low in measurement error and small in floating capacitance and leakage current and good in characteristic. As a means to attain the above object, a polycrystalline silicon diaphragm is sealed with a silicon oxide film deposited through a LPCVD method and then completely covered. The diaphragm is placed on a surface of a semiconductor substrate with a nearly constant gap of 0.15 to 1.3 μm, and has difference-in-grade constructions of a deformation reducing means due to remaining stress.
摘要翻译：通过以较少的工艺密封隔膜，降低成本，减少由于剩余应力引起的变形，提出了一种稳定可靠的压力传感器结构。压力传感器测量误差小，浮动电容和漏电流小，特性好。作为实现上述目的的手段，用通过LPCVD方法沉积的氧化硅膜密封多晶硅隔膜，然后完全覆盖。隔膜被放置在半导体衬底的表面上，具有0.15-1.3μm的几乎恒定的间隙，并且由于剩余应力而具有变形减小装置的不同级别的构造。

28. 发明授权

US06781172B2 Semiconductor device with adhesion-improvement capacitor and process for producing the device 失效
标题翻译：具有粘附改善电容器的半导体器件及其制造方法
公开(公告)号：US06781172B2
公开(公告)日：2004-08-24
申请号：US09800493
申请日：2001-03-08
申请人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
发明人： Hiroshi Moriya , Tomio Iwasaki , Hiroyuki Ohta , Shinpei Iijima , Isamu Asano , Yuzuru Ohji , Yoshitaka Nakamura
IPC分类号： H01L2976
CPC分类号： H01L28/60 , H01L27/10814 , H01L28/55
摘要： A semiconductor device equipped with information storage capacitor comprising a first capacitor electrode, an oxide film, a second capacitor electrode and insulating films containing silicon as a main constituting element, wherein at least one of first and second capacitor electrodes contains as a main constituting element at least one element selected from rhodium, ruthenium, iridium, osmium and platinum, and as an adding element at least one element selected from palladium, nickel, cobalt and titanium, is excellent in adhesiveness between the capacitor electrodes and the insulating films.
摘要翻译：一种配备有信息存储电容器的半导体器件，包括第一电容器电极，氧化物膜，第二电容器电极和以硅为主要构成元素的绝缘膜，其中，第一和第二电容器电极中的至少一个包含作为主要构成元素选自铑，钌，铱，锇和铂中的至少一种元素，并且作为添加元素，选自钯，镍，钴和钛中的至少一种元素，电容器电极和绝缘膜之间的粘附性优异。

29. 发明授权

US4860424A Method of and mechanism for attaching an automobile door 失效
标题翻译：汽车门安装方法及机构
公开(公告)号：US4860424A
公开(公告)日：1989-08-29
申请号：US73589
申请日：1987-07-15
申请人： Shigeo Kaibuki , Shinpei Watanabe , Mitsugu Takahashi , Hiroshi Moriya
发明人： Shigeo Kaibuki , Shinpei Watanabe , Mitsugu Takahashi , Hiroshi Moriya
IPC分类号： B23P19/04 , B62D65/06 , E05D5/12
CPC分类号： B62D65/06 , B23P19/04 , E05D5/128 , F16C11/045 , E05Y2900/531 , Y10S411/913 , Y10T16/521 , Y10T16/53607 , Y10T16/557 , Y10T29/4984 , Y10T29/49876 , Y10T29/53552 , Y10T29/5383
摘要： A hinge pin is temporarily held on a first hinge member on the automobile body by means of a hinge pin support mechanism. A door to be attached to the automobile body is held in position, and a second hinge member on the door is brought into engagement with the first hinge member. The hinge pin is pressed into the second hinge member through the first hinge member to couple the door to the automobile door. The hinge pin support mechanism includes a hinge pin retaining member including a ring separably joined to a plurality of legs. When the hinge pin is pressed into the hinge members, the ring is sheared off from the legs and rides in a peripheral groove defined in the hinge pin. The ring then engages one of the hinge members to prevent the hinge pin from being removed from the hinge members. The door can automatically be attached to the automobile body by a door attaching mechanism and detached from the automobile body by a door detaching mechanism.
摘要翻译：铰链销通过铰链销支撑机构临时固定在汽车车体上的第一铰链构件上。安装在汽车车体上的门被保持就位，门上的第二铰链构件与第一铰链构件接合。铰链销通过第一铰链构件压入第二铰链构件，以将门连接到汽车门。铰链销支撑机构包括铰链销保持构件，该铰链销保持构件包括可分离地接合到多个腿的环。当铰链销被压入铰链构件时，环从腿部剪切并骑在铰链销中限定的周边槽中。然后，环接合其中一个铰链构件，以防止铰链销从铰链构件移除。门可以通过门安装机构自动地附接到汽车车身，并通过门拆卸机构与汽车车身分离。

30. 发明授权

US08584152B2 Disc drive with heat dissipating ventilation 有权
标题翻译：光盘驱动器散热通风
公开(公告)号：US08584152B2
公开(公告)日：2013-11-12
申请号：US13056808
申请日：2010-01-04
申请人： Motonari Ogura , Yukihiro Iwata , Hiroshi Moriya , Hiroki Takamori
发明人： Motonari Ogura , Yukihiro Iwata , Hiroshi Moriya , Hiroki Takamori
IPC分类号： G11B33/14 , G11B33/12
CPC分类号： G11B31/02 , G11B33/142
摘要： The electronic device pertaining to an embodiment comprises a housing that holds an optical disk. The housing comprises a holding space holding an optical disk, a first internal space being apart from the holding space and in which a first electronic component controlling a pickup is disposed, an intake channel leading from the first internal space to the holding space, and an exhaust channel leading from the holding space to a specific space being distinct from the first internal space.
摘要翻译：属于实施例的电子设备包括保持光盘的外壳。壳体包括保持光盘的保持空间，与保持空间分开的第一内部空间，并且其中设置有控制拾取器的第一电子部件，从第一内部空间引导到保持空间的进气通道，以及从保持空间引导到与第一内部空间不同的特定空间的排气通道。

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