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21. 发明授权

US06372609B1 Method of Fabricating SOI wafer by hydrogen ION delamination method and SOI wafer fabricated by the method 有权
标题翻译：通过氢离子分离法制造SOI晶片的方法和通过该方法制造的SOI晶片
公开(公告)号：US06372609B1
公开(公告)日：2002-04-16
申请号：US09555687
申请日：2000-06-02
申请人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
发明人： Hiroji Aga , Naoto Tate , Kiyoshi Mitani
IPC分类号： H01L2130
CPC分类号： H01L21/76254
摘要： There is provided a method of fabricating an SOI wafer having high quality by hydrogen ion delamination method wherein a damage layer remaining on the surface of the SOI layer after delamination and surface roughness are removed maintaining thickness uniformity of the SOI layer. According to the present invention, there are provided a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after bonding heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; a method of fabricating an SOI wafer by hydrogen ion delamination method wherein an oxide film is formed on an SOI layer by heat treatment in an oxidizing atmosphere after delaminating heat treatment, then the oxide film is removed, and subsequently heat treatment in a reducing atmosphere is performed; and an SOI wafer fabricated by the methods.
摘要翻译：提供了一种通过氢离子分层方法制造具有高质量的SOI晶片的方法，其中去除了在分层之后残留在SOI层的表面上的损伤层和表面粗糙度，保持了SOI层的厚度均匀性。根据本发明，提供了一种通过氢离子分层方法制造SOI晶片的方法，其中通过在结合热处理之后的氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后进行还原气氛的热处理。通过氢分离法制造SOI晶片的方法，其中通过在分解热处理之后在氧化气氛中进行热处理在SOI层上形成氧化膜，然后除去氧化物膜，然后在还原气氛中进行热处理执行以及通过该方法制造的SOI晶片。

22. 发明授权

US06239004B1 Method of forming oxide film on an SOI layer and method of fabricating a bonded wafer 失效
标题翻译：在SOI层上形成氧化膜的方法和制造接合晶片的方法
公开(公告)号：US06239004B1
公开(公告)日：2001-05-29
申请号：US09135976
申请日：1998-08-18
申请人： Hiroji Aga , Kiyoshi Mitani , Masatake Nakano
发明人： Hiroji Aga , Kiyoshi Mitani , Masatake Nakano
IPC分类号： H01L2130
CPC分类号： H01L21/76251 , H01L21/2007
摘要： In a method of fabricating a bonded wafer, an oxide film is first formed on the surface of at least one of two mirror-polished silicon wafers. The two silicon wafers are superposed such that the mirror-polished surfaces come into close contact with each other, and heat treatment is performed in order to join the wafers together firmly. Subsequently, the thickness of one of the wafers is reduced so as to yield a thin film, the surface of which is then polished and subjected to vapor-phase etching in order to make the thickness of the thin film uniform. Optionally, the vapor-phase-etched surface is then mirror-polished. The surface of the bonded wafer is oxidized, and the generated surface oxide film is then removed. In the method, the thickness of the oxide film formed on the surface of the bonded wafer is made not greater than 50 nm. The method reliably eliminates damage and crystal defects generated during etching in accordance with PACE method or subsequent mirror polishing, and thereby enables relatively simple and low cost manufacture of bonded wafers having a very thin SOI layer that has good thickness uniformity and excellent crystallinity.
摘要翻译：在制造接合晶片的方法中，首先在两个镜面抛光硅晶片中的至少一个的表面上形成氧化膜。将两个硅晶片叠置成使得镜面抛光表面彼此紧密接触，并且进行热处理以将晶片牢固地接合在一起。随后，减少一个晶片的厚度，以产生薄膜，然后对其表面进行抛光并进行气相蚀刻，以使薄膜的厚度均匀。任选地，将气相蚀刻表面进行镜面抛光。接合晶片的表面被氧化，然后除去生成的表面氧化膜。在该方法中，形成在接合晶片的表面上的氧化膜的厚度不大于50nm。该方法可以根据PACE法或随后的镜面抛光可靠地消除蚀刻期间产生的损伤和晶体缺陷，从而能够制造具有良好厚度均匀性和优异结晶度的非常薄的SOI层的接合晶片的相对简单且低成本的制造。

23. 发明申请

US20110045246A1 SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING SILICON SINGLE CRYSTAL WAFER, AND METHOD FOR EVALUATING SILICON SINGLE CRYSTAL WAFER 有权
标题翻译：硅单晶和制造硅单晶的方法和用于评估硅单晶的方法
公开(公告)号：US20110045246A1
公开(公告)日：2011-02-24
申请号：US12990038
申请日：2009-05-07
申请人： Fumio Tahara , Tsuyoshi Ohtsuki , Takatoshi Nagoya , Kiyoshi Mitani
发明人： Fumio Tahara , Tsuyoshi Ohtsuki , Takatoshi Nagoya , Kiyoshi Mitani
IPC分类号： B32B5/00 , H01L21/66 , G01Q60/24
CPC分类号： C30B29/06 , C30B33/02 , H01L21/02008 , H01L22/12 , H01L2924/0002 , Y10T428/24355 , H01L2924/00
摘要： A method for manufacturing a silicon single crystal wafer, having at least: a step of preparing a silicon single crystal ingot; a step of slicing the silicon single crystal ingot to fabricate a plurality of sliced substrates; a processing step of processing the plurality of sliced substrates into a plurality of substrates by performing at least one of lapping, etching, and polishing; a step of sampling at least one from the plurality of substrates; a step of measuring surface roughness of the substrate sampled at the sampling step by an AFM and obtaining an amplitude (an intensity) of a frequency band corresponding to a wavelength of 20 nm to 50 nm to make a judgment of acceptance; and a step of sending the substrate to the next step if a judgment result is acceptance or performing reprocessing if the judgment result is rejection.
摘要翻译：一种制造硅单晶晶片的方法，至少具有：制备硅单晶锭的步骤; 切割硅单晶锭以制造多个切片基板的步骤; 通过进行研磨，蚀刻和研磨中的至少一种来将多个切片基板加工成多个基板的处理步骤; 从所述多个基板中取样至少一个的步骤; 通过AFM测量在采样步骤中采样的基板的表面粗糙度并获得对应于20nm至50nm的波长的频带的振幅（强度）以判定接受的步骤; 以及如果判断结果为拒绝则判断结果为接受或执行再处理的步骤，将基板发送到下一步骤。

24. 发明申请

US20080305318A1 SILICON ON INSULATOR (SOI) WAFER AND PROCESS FOR PRODUCING SAME 审中-公开
标题翻译：绝缘体硅（SOI）波形及其制造方法
公开(公告)号：US20080305318A1
公开(公告)日：2008-12-11
申请号：US12163785
申请日：2008-06-27
申请人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
发明人： Atsuo Ito , Yoshihiro Kubota , Kiyoshi Mitani
IPC分类号： B32B27/32 , H01L21/30
CPC分类号： H01L21/76256 , C30B29/06 , C30B33/00 , H01L27/12
摘要： In a manufacturing method of manufacturing a silicon on insulator (SOI) wafer, a single crystal silicon whose surface is an N region on an outer side of an OSF region, is grown and sliced to fabricate an N region single crystal silicon. An ion injection layer is formed within the N region single crystal silicon wafer by injecting a hydrogen ion or a rare gas ion from a surface of the N region single crystal silicon wafer; the ion injection surface of the N region single crystal silicon wafer and/or a surface of the transparent insulation substrate is processed using plasma and/or ozone. The ion injection surface is bonded to the surface of the transparent insulation substrate by bringing them into close contact with each other at room temperature. An SOI layer is formed by mechanically peeling the single crystal silicon wafer.
摘要翻译：在制造绝缘体上硅（SOI）晶片的制造方法中，生长表面为OSF区域外侧的N区的单晶硅，并切片以制造N区单晶硅。通过从N区域单晶硅晶片的表面注入氢离子或稀有气体离子，在N区域单晶硅晶片内形成离子注入层; 使用等离子体和/或臭氧处理N区域单晶硅晶片的离子注入表面和/或透明绝缘衬底的表面。离子注入表面通过在室温下彼此紧密接触而结合到透明绝缘基板的表面。通过机械剥离单晶硅晶片形成SOI层。

25. 发明申请

US20050208322A1 Method for treating substrates for microelectronics and substrates obtained by said method 有权
标题翻译：用于处理通过所述方法获得的用于微电子学和衬底的衬底的方法
公开(公告)号：US20050208322A1
公开(公告)日：2005-09-22
申请号：US11063867
申请日：2005-02-24
申请人： Thierry Barge , Bruno Ghyselen , Toshiaki Iwamatsu , Hideki Naruoka , Junichiro Furihata , Kiyoshi Mitani
发明人： Thierry Barge , Bruno Ghyselen , Toshiaki Iwamatsu , Hideki Naruoka , Junichiro Furihata , Kiyoshi Mitani
IPC分类号： H01L21/306 , H01L21/762 , G03C5/00 , H01L21/00 , H01L21/30 , H01L21/46 , H01L21/84 , H01L29/06 , H01L29/12 , H01L29/30
CPC分类号： H01L21/306 , H01L21/30625 , H01L21/76254 , Y10T428/12528
摘要： An embodiment of a multilayer wafer according to the invention includes a base substrate, a first layer associated with the base substrate, and a second layer on the first layer on side opposite from the base substrate in an axial direction and having a lateral edge. The first layer includes a ridge that protrudes axially and is disposed laterally adjacent the second layer measured in a direction normal to the axial direction for protecting the lateral edge. This ridge can surround portion the lateral edge in an axial cross-section for preventing edge falls. Also, the ridge can have an axial height greater than the axial thickness of the second layer. In one embodiment, the second layer includes an oxydizable semiconductor and the first layer includes an oxidized insulator.
摘要翻译：根据本发明的多层晶片的实施例包括基底基板，与基底基板相关联的第一层，以及在轴向方向上与基底基板相反一侧的第一层上的第二层，并且具有侧向边缘。第一层包括沿着垂直于轴向方向测量的沿轴向突出并且横向邻近第二层布置的脊，用于保护侧边缘。该脊可以围绕横向边缘围绕轴向横截面以防止边缘下降。此外，脊可以具有大于第二层的轴向厚度的轴向高度。在一个实施例中，第二层包括氧化半导体，第一层包括氧化绝缘体。

26. 发明授权

US06596610B1 Method for reclaiming delaminated wafer and reclaimed delaminated wafer 有权
标题翻译：回收分层晶片和再生分层晶片的方法
公开(公告)号：US06596610B1
公开(公告)日：2003-07-22
申请号：US09889933
申请日：2001-07-25
申请人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
发明人： Susumu Kuwabara , Kiyoshi Mitani , Naoto Tate , Masatake Nakano , Thierry Barge , Christophe Maleville
IPC分类号： H01L2130
CPC分类号： H01L21/02032 , H01L21/76254 , H01L22/34 , Y10S438/906 , Y10S438/974 , Y10S438/977
摘要： In a method for reclaiming a delaminated wafer produced as a by-product in the production of bonded wafer by the ion implantation and delamination method, at least ion-implanted layer on a chamfered portion of the delaminated wafer is removed, and then a surface of the wafer is polished. Specifically, at least a chamfered portion of the delaminated wafer is subjected to an etching treatment and/or processing by chamfering, and then a surface of the wafer is polished. Alternatively, the delaminated wafer is subjected to a heat treatment, and then polished. There are provided a method for reclaiming a delaminated wafer, which provides a reclaimed wafer of high quality that does not generate particles even when it is subjected to a heat treatment with good yield, and such a reclaimed wafer.
摘要翻译：在通过离子注入和分层方法回收在接合晶片的制造中作为副产物生产的分层晶片的方法中，至少在分层晶片的倒角部分上的离子注入层被去除，然后，晶圆被抛光。具体而言，通过倒角对剥离后的晶片的至少倒角部进行蚀刻处理和/或处理，然后对晶片的表面进行研磨。或者，对剥离后的晶片进行热处理，然后进行抛光。提供了一种用于回收分层晶片的方法，其提供了即使经受了良好产率的热处理也不产生颗粒的高质量的再生晶片，以及这种再生晶片。

27. 发明授权

US07608548B2 Method for cleaning a multilayer substrate and method for bonding substrates and method for producing a bonded wafer 有权
标题翻译：多层基板的清洗方法及基板的接合方法以及接合晶片的制造方法
公开(公告)号：US07608548B2
公开(公告)日：2009-10-27
申请号：US10570949
申请日：2004-09-07
申请人： Isao Yokokawa , Kiyoshi Mitani
发明人： Isao Yokokawa , Kiyoshi Mitani
IPC分类号： H01L21/302
CPC分类号： H01L21/02052 , H01L21/76254
摘要： Disclosed is a method for cleaning a multilayer substrate at least having a silicon single crystal wafer with a SiGe layer epitaxially grown on a surface of the silicon single crystal wafer, where the SiGe layer is an outermost surface of the SiGe layer and then cleaning the multilayer substrate with a first cleaning liquid capable of etching the protective film so that the protective film remains. The protective film prevents roughening of the surface of the SiGe layer while the cleaning is performed. The cleaning is performed. The cleaning is performed so that a thickness of the remaining protective film is from 1 nm to 100 nm.
摘要翻译：公开了一种用于清洁至少具有硅单晶晶片的多层衬底的方法，所述硅单晶晶片在硅单晶晶片的表面上外延生长SiGe层，其中SiGe层是SiGe层的最外表面，然后清洗多层基板，其具有能够蚀刻保护膜的第一清洁液体，使得保护膜保留。在执行清洁时，保护膜防止SiGe层的表面的粗糙化。进行清洁。执行清洁，使得剩余保护膜的厚度为1nm至100nm。

28. 发明授权

US07550309B2 Method for producing semiconductor wafer 有权
标题翻译：半导体晶片的制造方法
公开(公告)号：US07550309B2
公开(公告)日：2009-06-23
申请号：US11662594
申请日：2005-09-16
申请人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
发明人： Isao Yokokawa , Nobuhiko Noto , Kiyoshi Mitani
IPC分类号： H01L21/00
CPC分类号： C30B33/06 , C30B29/30 , C30B29/32 , H01L21/02381 , H01L21/0245 , H01L21/02532 , H01L21/0262 , H01L21/02694
摘要： The present invention is a method for producing a semiconductor wafer, comprising at least steps of, epitaxially growing a Si1-XGeX layer (0
摘要翻译：本发明是一种制造半导体晶片的方法，至少包括以下步骤：在SOI晶片上外延生长Si1-XGeX层（0

29. 发明授权

US07531425B2 Method of fabricating bonded wafer 有权
标题翻译：制造接合晶片的方法
公开(公告)号：US07531425B2
公开(公告)日：2009-05-12
申请号：US10495102
申请日：2002-11-19
申请人： Masatake Nakano , Shinichi Tomizawa , Kiyoshi Mitani
发明人： Masatake Nakano , Shinichi Tomizawa , Kiyoshi Mitani
IPC分类号： H01L21/30
CPC分类号： H01L21/30608 , H01L21/02052 , H01L21/304 , H01L21/76254
摘要： This invention relates to a method of fabricating a bonded wafer 39 in which a bond wafer 31 and a base wafer 32, both of which are composed of silicon single crystal, are bonded while placing an oxide film 33 in between, and the bond wafer 31 is thinned. Use of modified chemically-etched wafers as both of the bond wafer 31 and base wafer 32 is successful in reducing an unbonded area UA therebetween after annealing for bonding, where the modified chemically-etched wafer refers to a wafer which is etched by alkali etching and succeeding acid etching, while setting etching amount larger in the alkali etching than in the acid etching.
摘要翻译：本发明涉及一种制造接合晶片39的方法，其中将两个由硅单晶组成的接合晶片31和基底晶片32在其间放置氧化膜33的同时被接合，并且接合晶片31 变薄了使用改性的化学蚀刻晶片作为接合晶片31和基底晶片32两者成功地在退火后还原其中的未结合区域UA，其中修改的化学蚀刻晶片是指通过碱蚀刻蚀刻的晶片，同时在碱蚀刻中设置蚀刻量比在酸蚀刻中更大。

30. 发明申请

US20060099791A1 Bonded wafer and method of producing bonded wafer 有权
公开(公告)号：US20060099791A1
公开(公告)日：2006-05-11
申请号：US11300503
申请日：2005-12-15
申请人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
发明人： Kiyoshi Mitani , Kiyoshi Demizu , Isao Yokokawa , Tadahiro Ohmi , Shigetoshi Sugawa
IPC分类号： H01L21/44
CPC分类号： H01L21/2007 , H01L21/76254 , H01L29/045
摘要： The present invention provides a bonded wafer, wherein at least a silicon single crystal layer is formed on a silicon single crystal wafer, the silicon single crystal layer has a crystal plane orientation of {110}, and the silicon single crystal wafer has a crystal plane orientation of {100}. The present invention also provides a method of producing a bonded wafer, wherein after at least a first silicon single crystal wafer having a crystal plane orientation of {110} and a second silicon single crystal wafer having a crystal plane orientation of {100} are bonded directly or bonded via an insulator film, the first silicon single crystal wafer is made into a thin film. Thereby, there can be provided a wafer possible to obtain a MIS device having good characteristics by utilizing a silicon single crystal wafer having the {110} plane.

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