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21. 发明申请

US20080053489A1 SUBSTRATE CLEANING METHOD 有权
标题翻译：基板清洗方法
公开(公告)号：US20080053489A1
公开(公告)日：2008-03-06
申请号：US11470353
申请日：2006-09-06
申请人： Shogo Mizota , Minami Teruomi , Kenji Yokomizo , Taira Masaki
发明人： Shogo Mizota , Minami Teruomi , Kenji Yokomizo , Taira Masaki
IPC分类号： B08B7/00
CPC分类号： H01L21/02052 , H01L21/02057 , Y10S134/902
摘要： A method is provided for reducing the amount of film fragments discharged into a processing liquid circulation system during removal of films from wafers, thereby reducing the frequency of filter cleaning or filter placement. The method includes exposing a wafer containing a film formed thereon in a process chamber of a substrate processing system to a processing liquid, where the wafer is not rotated or is rotated at a first speed and the processing liquid is discharged from the process chamber to a processing liquid circulation system. Subsequently, exposure of the wafer to the processing liquid is discontinued and the wafer is rotated at a second speed greater than the first speed to centrifugally remove fragments of the film from the wafer. Next, the wafer is exposed to the same or a different processing liquid and the processing liquid is discharged from the process chamber to a processing liquid drain.
摘要翻译：提供了一种减少在从晶片去除薄膜期间排出到处理液循环系统中的薄膜碎片的量的方法，从而降低了过滤器清洁或过滤器放置的频率。该方法包括将其上形成的膜的晶片暴露于基板处理系统的处理室中的处理液体中，其中晶片不以第一速度旋转或旋转，并且处理液体从处理室排出到处理液体循环系统。随后，停止将晶片暴露于处理液体，并以大于第一速度的第二速度转动晶片，从晶片离心分离膜片。接下来，将晶片暴露于相同或不同的处理液体，并且处理液体从处理室排出到处理液体排出口。

22. 发明授权

US07270137B2 Apparatus and method of securing a workpiece during high-pressure processing 失效
标题翻译：在高压处理过程中固定工件的装置和方法
公开(公告)号：US07270137B2
公开(公告)日：2007-09-18
申请号：US10425701
申请日：2003-04-28
申请人： Kenji Yokomizo
发明人： Kenji Yokomizo
IPC分类号： B08B11/02 , B08B7/00
CPC分类号： H01L21/68728 , B08B7/0021 , Y10S134/902
摘要： An apparatus is disclosed for performing high-pressure processing of a workpiece having a top face and a bottom face. The apparatus comprises a processing chamber and a holder for securing the workpiece within the processing chamber so that a substantial portion of the top face and a substantial portion of the bottom face is exposed to a processing material introduced into the processing chamber. In one embodiment, the holder comprises an upper segment and a lower segment. The lower segment contacts the workpiece at or near an edge of the workpiece, thus supporting the workpiece in a first vertical direction and securing it in a horizontal plane. The upper segment contacts the workpiece at or near an edge of the workpiece, securing it in a second vertical direction.
摘要翻译：公开了一种用于对具有顶面和底面的工件进行高压处理的装置。该设备包括处理室和用于将工件固定在处理室内的保持器，使得顶面的大部分和底面的大部分暴露于引入处理室的处理材料。在一个实施例中，保持器包括上段和下段。下段在工件的边缘处或其附近接触工件，从而在第一垂直方向上支撑工件并将其固定在水平面中。上段在工件的边缘处或其附近接触工件，将其固定在第二垂直方向上。

23. 发明申请

US20070071999A1 Nickel plating solution and its preparation method, nickel plating method and printed wiring board copper foil 有权
标题翻译：镀镍液及其制备方法，镀镍法和印刷线路板铜箔
公开(公告)号：US20070071999A1
公开(公告)日：2007-03-29
申请号：US11524781
申请日：2006-09-21
申请人： Yasuyuki Ito , Katsuyuki Matsumoto , Koji Nukaga , Yasuhiro Kusano , Kenji Yokomizo , Shingo Watanabe , Hiroyuki Ogawara , Katsumi Nomura
发明人： Yasuyuki Ito , Katsuyuki Matsumoto , Koji Nukaga , Yasuhiro Kusano , Kenji Yokomizo , Shingo Watanabe , Hiroyuki Ogawara , Katsumi Nomura
IPC分类号： C25D3/56 , C25D3/12
CPC分类号： C25D3/12 , C25D3/562 , H05K3/384 , H05K3/389 , H05K2201/0355 , H05K2203/0307 , H05K2203/0723 , Y10S428/935 , Y10T428/12438 , Y10T428/12472 , Y10T428/12569 , Y10T428/12611 , Y10T428/12792 , Y10T428/1291
摘要： A nickel plating solution preparation method has the steps of: dissolving in water 100 g/L or more and less than 200 g/L of nickel sulfate, and 10 g/L or more and less than 30 g/L of sodium citrate or 8 g/L or more and less than 25 g/L of citric acid, but adding no nickel chloride; and adjusting a pH of the resultant solution to 2 or more and less than 4. Another nickel plating solution preparation method has the steps of: dissolving in water 100 g/L or more and less than 200 g/L of nickel sulfate, and 10 g/L or more and less than 30 g/L of sodium citrate or 8 g/L or more and less than 25 g/L of citric acid, but adding no boric acid; and adjusting a pH of the resultant solution to 2 or more and less than 4.
摘要翻译：镍镀液制备方法的步骤为：将100g / L以上且小于200g / L的硫酸镍和10g / L以上且小于30g / L的柠檬酸钠或8 g / L以上且小于25g / L的柠檬酸，但不添加氯化镍; 并将所得溶液的pH调节至2以上且小于4.另一种镀镍溶液制备方法具有以下步骤：将100g / L以上且小于200g / L的硫酸镍溶解于水中，将10 g / L以上且小于30g / L的柠檬酸钠或8g / L以上且小于25g / L的柠檬酸，但不添加硼酸; 并将所得溶液的pH调节至2以上且小于4。

24. 发明授权

US06780277B2 Etching method and etching apparatus 有权
标题翻译：蚀刻方法和蚀刻装置
公开(公告)号：US06780277B2
公开(公告)日：2004-08-24
申请号：US10104458
申请日：2002-03-22
申请人： Kenji Yokomizo , Tom Williams
发明人： Kenji Yokomizo , Tom Williams
IPC分类号： H01L21304
CPC分类号： H01L21/67086 , H01L21/31111
摘要： An etching method and an etching apparatus are provided. Silicon (Si) from surfaces semiconductor wafers W dissolves into an etching liquid E stored in a process bath 10. On detection of the concentration of silicon by a concentration sensor 50, the etching liquid E in the process bath 10 is discharged while leaving a part of the etching liquid when the Si concentration in the etching liquid E reaches a designated concentration. After that, a new etching liquid of substantially equal to an amount of the discharged etching liquid E is supplied into the process bath 10 and added to the etching liquid remaining in the bath 10. Consequently, it is possible to restrict the etching rate just after the exchange of etching liquid from rising excessively.
摘要翻译：提供蚀刻方法和蚀刻装置。从表面半导体晶片W的硅（Si）溶解到存储在处理槽10中的蚀刻液体E.在通过浓度传感器50检测到硅的浓度时，处理浴10中的蚀刻液体E被排出，当蚀刻液体E中的Si浓度达到指定浓度时，之后，将基本上等于排出的蚀刻液体E的量的新的蚀刻液供给到处理槽10中，并与残留在槽10中的蚀刻液相加。因此，可以限制刚好在蚀刻液的交换过度上升。

25. 发明授权

US5817185A Method for washing substrates 失效
标题翻译：洗涤基材的方法
公开(公告)号：US5817185A
公开(公告)日：1998-10-06
申请号：US976262
申请日：1997-11-21
申请人： Naoki Shindo , Shigenori Kitahara , Takayuki Toshima , Kenji Yokomizo
发明人： Naoki Shindo , Shigenori Kitahara , Takayuki Toshima , Kenji Yokomizo
IPC分类号： H01L21/00 , H01L21/306 , H01L21/677 , B08B13/00
CPC分类号： H01L21/67057 , H01L21/02052 , H01L21/67051 , H01L21/67781 , Y10S134/902 , Y10S414/137
摘要： A method of washing substrates arranged at a substantially equal pitch internal in a cassette which includes steps of (a) transferring the substrates to a holder a pitch interval narrower than the arrangement pitch interval in said cassette; (b) supplying a washing solution into a processing bath; (c) conveying the holder holding the substrates into the processing bath; (d) dipping the substrates in the washing solution in the processing bath to wash the substrates; and (e) supplying a rinse solution into the processing bath to substitute the washing solution with the rinse solution to rinse the substrates in the processing bath.
摘要翻译：一种洗涤在盒子内部以基本相同的间距排列的衬底的方法，包括以下步骤：（a）将衬底转移到保持器，该间距间隔窄于所述盒中的布置间距间隔; （b）将洗涤溶液供应到处理槽中; （c）将保持基板的支架输送到处理槽中; （d）将基材浸入处理槽中的洗涤溶液中以洗涤基材; 和（e）将冲洗溶液供应到处理槽中以用冲洗溶液替换洗涤溶液以冲洗处理槽中的基底。

26. 发明授权

US5671544A Substrate drying apparatus and substrate drying method 失效
标题翻译：基材干燥装置和基材干燥方法
公开(公告)号：US5671544A
公开(公告)日：1997-09-30
申请号：US697132
申请日：1996-08-20
申请人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
发明人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
IPC分类号： H01L21/304 , F26B21/14 , H01L21/00 , F26B21/06
CPC分类号： H01L21/67034 , F26B21/145
摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.
摘要翻译：基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。

27. 发明授权

US5575079A Substrate drying apparatus and substrate drying method 失效
标题翻译：基材干燥装置和基材干燥方法
公开(公告)号：US5575079A
公开(公告)日：1996-11-19
申请号：US330793
申请日：1994-10-28
申请人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
发明人： Kenji Yokomizo , Hiroshi Tanaka , Shori Mokuo , Teruomi Minami
IPC分类号： H01L21/304 , F26B21/14 , H01L21/00 , F26B21/06
CPC分类号： H01L21/67034 , F26B21/145
摘要： A substrate drying apparatus includes a process bath having an object containing region for containing an object to be treated, a treatment liquid containing region for containing a volatile treatment liquid, and heating member for evaporating the treatment liquid, a receiving container, provided below the object containing region, for receiving water removed from the object with use of the evaporated treatment liquid, an exhaust pipe, attached to the container, for exhausting the water from the container to the outside of the process bath, and a cooling device, provided above the object containing region of the process bath, for condensing the evaporated treatment liquid, wherein the exhaust pipe has a valve and a branch pipe branched from the exhaust pipe such that the branch pipe is closer to the container than the valve is.
摘要翻译：基材干燥装置包括具有含有待处理物体的被检体容纳区域的处理槽，含有挥发性处理液的处理液含有区域和蒸发处理液的加热部件，设置在物体的下方的接收容器用于接收使用所述蒸发处理液从所述物体除去的水;附接到所述容器的用于将水从所述容器排出到所述处理槽的外部的排气管，以及设置在所述容器的上方的冷却装置用于使蒸发的处理液冷凝的排出管，其特征在于，所述排气管具有从所述排气管分支的阀和分支管，使得所述分支管比所述阀更靠近所述容器。

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